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1. 发明授权

US08397668B2 Plasma processing apparatus 有权
公开(公告)号：US08397668B2
公开(公告)日：2013-03-19
申请号：US12398226
申请日：2009-03-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

2. 发明授权

US07662232B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07662232B2
公开(公告)日：2010-02-16
申请号：US11730962
申请日：2007-04-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/00 , B65B1/04
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性同时保持工艺深度的面内均匀性。

3. 发明申请

US20060236932A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060236932A1
公开(公告)日：2006-10-26
申请号：US11201243
申请日：2005-08-11
申请人： Kenetsu Yokogawa , Kenji Maeda , Hiroyuki Kobayashi , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Kenetsu Yokogawa , Kenji Maeda , Hiroyuki Kobayashi , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32633 , H01J37/321 , H01J37/32623 , H01L21/67069
摘要： The invention provides a plasma processing apparatus capable of preventing the production of particle and preventing the influence of particle on the sample. The plasma processing apparatus comprises a vacuum chamber; process gas introducing means for introducing process gas into the vacuum chamber; means, coupled to a first RF power supply, for applying RF energy to the process gas introduced into the vacuum chamber to turn the process gas into plasma; a sample mounting electrode for mounting a sample on an upper surface thereof and holding the sample in the vacuum chamber; evacuation means for evacuating the process gas in the vacuum chamber; and plasma confining means, provided on a peripheral side of the mounting electrode in the vacuum chamber, for inflecting flow of the process gas caused by the evacuation means on a downstream side of a sample mounting surface of the mounting electrode to prevent plasma from diffusing downstream of the sample mounting surface.
摘要翻译：本发明提供一种等离子体处理装置，其能够防止颗粒的产生并防止颗粒对样品的影响。等离子体处理装置包括真空室; 处理气体引入装置，用于将处理气体引入真空室; 装置，耦合到第一RF电源，用于将RF能量施加到引入到真空室中的工艺气体，以将工艺气体转化为等离子体; 用于将样品安装在其上表面并将样品保持在真空室中的样品安装电极; 用于抽真空室中的处理气体的排气装置; 以及设置在真空室中的安装电极的周边侧的等离子体限制装置，用于使由排气装置产生的处理气体的流动在安装电极的样品安装表面的下游侧流动，以防止等离子体向下游扩散的样品安装面。

4. 发明授权

US08733282B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08733282B2
公开(公告)日：2014-05-27
申请号：US13829676
申请日：2013-03-14
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性同时保持工艺深度的面内均匀性。

5. 发明申请

US20090194235A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090194235A1
公开(公告)日：2009-08-06
申请号：US12398226
申请日：2009-03-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： H01L21/306
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性同时保持工艺深度的面内均匀性。

6. 发明申请

US20070186972A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070186972A1
公开(公告)日：2007-08-16
申请号：US11730962
申请日：2007-04-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： B08B7/00 , G01L21/30 , H01L21/302
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of 02 or N2are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中至少两种具有不同组成比的O 2或N 2 N的处理气体被引入到处理室通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。

7. 发明申请

US20060016559A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060016559A1
公开(公告)日：2006-01-26
申请号：US10911610
申请日：2004-08-05
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa , Tadamitsu Kanekiyo
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01L21/3065 , Y10T137/0402
摘要： The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.
摘要翻译：本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中具有不同组成比的O 2或N 2 2的至少两种处理气体被引入到处理室通过不同的气体入口，以便在保持工艺深度的面内均匀性的同时控制临界尺寸的面内均匀性。

8. 发明申请

US20110100555A1 Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
标题翻译：具有降低粒子污染的半导体器件制造装置
公开(公告)号：US20110100555A1
公开(公告)日：2011-05-05
申请号：US12987448
申请日：2011-01-10
申请人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： C23F1/08 , C23C16/455 , C23C16/52 , C23C16/44
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译：半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为处理。温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

9. 发明申请

US20090250000A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090250000A1
公开(公告)日：2009-10-08
申请号：US12193815
申请日：2008-08-19
申请人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kazuyuki Ono , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： C23C14/00 , F04B49/00
CPC分类号： H01L21/67201 , Y10T137/85986
摘要： A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer.
摘要翻译：一种真空处理装置，其能够获得在锁定室中沉积在样品上的异物的数量的减少与提高打开速度可控阀的通过量之间的相容性，并且可以通过以下步骤自动控制减压速度控制电脑。

10. 发明申请

US20080277061A1 WAFER EDGE CLEANER 审中-公开
公开(公告)号：US20080277061A1
公开(公告)日：2008-11-13
申请号：US11835463
申请日：2007-08-08
申请人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
发明人： Hiroyuki Kobayashi , Kenji Maeda , Masaru Izawa , Kenetsu Yokogawa
IPC分类号： H01L21/306 , G06F19/00
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.
摘要翻译：本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料峰值功率密度。

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