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1. 发明申请

US20100236480A1 RAW MATERIAL GAS SUPPLY SYSTEM AND FILM FORMING APPARATUS 审中-公开
标题翻译：原料气供应系统和薄膜成型设备
公开(公告)号：US20100236480A1
公开(公告)日：2010-09-23
申请号：US12680041
申请日：2008-09-22
申请人： Masamichi Hara , Atsushi Gomi , Shinji Maekawa , Kaoru Yamamoto , Satoshi Taga
发明人： Masamichi Hara , Atsushi Gomi , Shinji Maekawa , Kaoru Yamamoto , Satoshi Taga
IPC分类号： C23C16/54 , F15D1/00
CPC分类号： C23C16/4481 , Y10T137/8158 , Y10T137/8376
摘要： A raw material gas supply system (6) supplies a raw material gas to a gas use system (2) kept in a reduced pressure atmosphere. The system includes: a raw material tank (40) for storing a liquid raw material or a solid raw material; a raw material conduit (46) connected at one end to the raw material tank and connected at the other end to the gas use system; a carrier gas supply mechanism (54), connected to the raw material tank, for supplying a carrier gas into the raw material tank while controlling the flow rate of the gas; on-off valves (48, 50) interposed in the raw material conduit; a heater (64) for heating the raw material conduit and the on-off valves; and a temperature control device (92) for controlling the heater, wherein the raw material conduit and the on-off valves are each formed of a metal material having good thermal conductivity.
摘要翻译：原料气体供给系统（6）向保持在减压气氛中的气体使用系统（2）供给原料气体。该系统包括：原料罐（40），用于储存液体原料或固体原料; 原料管道（46），其一端连接到原料罐，并在另一端连接到气体使用系统; 连接到原料罐的载气供给机构（54），用于在控制气体的流量的同时向载体气体供给载气; 开闭阀（48,50）插入在原料管道中; 用于加热原料管道和开关阀的加热器（64）; 以及用于控制加热器的温度控制装置（92），其中原料管道和开关阀均由具有良好导热性的金属材料形成。

2. 发明申请

US20100210115A1 SUBSTRATE MOUNTING MECHANISM, SUBSTRATE PROCESSING APPARATUS, METHOD FOR SUPPRESSING FILM DEPOSITION ON SUBSTRATE MOUNTING MECHANISM, AND STORAGE MEDIUM 审中-公开
标题翻译：基板安装机构，基板加工装置，用于抑制基板安装机构上的膜沉积的方法和存储介质
公开(公告)号：US20100210115A1
公开(公告)日：2010-08-19
申请号：US12722193
申请日：2010-03-11
申请人： Masamichi HARA , Atsushi Gomi , Shinji Maekawa , Satoshi Taga , Kaoru Yamamoto
发明人： Masamichi HARA , Atsushi Gomi , Shinji Maekawa , Satoshi Taga , Kaoru Yamamoto
IPC分类号： H01L21/477 , H05B3/68
CPC分类号： H01L21/67103 , C23C16/4586 , C23C16/52 , H01L21/67109
摘要： A substrate mounting mechanism on which a target substrate is placed is provided. The substrate mounting mechanism includes a heater plate, which has a substrate mounting surface on which the target substrate is placed and has a heater embedded therein to heat the substrate to a deposition temperature at which a film is deposited. The substrate mounting mechanism also includes a temperature control jacket, which is formed to cover at least a surface of the heater plate other than the substrate mounting surface and adjusts the temperature to a non-deposition temperature below the deposition temperature.
摘要翻译：设置放置目标基板的基板安装机构。基板安装机构包括加热板，该加热板具有放置目标基板的基板安装表面，并且嵌入有加热器，以将基板加热到沉积膜的沉积温度。衬底安装机构还包括温度控制护套，其形成为覆盖加热器板的除了衬底安装表面之外的至少一个表面，并将温度调节到低于沉积温度的非沉积温度。

3. 发明授权

US09202728B2 Substrate mounting mechanism, and substrate processing apparatus 有权
标题翻译：基板安装机构和基板处理装置
公开(公告)号：US09202728B2
公开(公告)日：2015-12-01
申请号：US13452488
申请日：2012-04-20
申请人： Masamichi Hara , Atsushi Gomi , Shinji Maekawa , Satoshi Taga , Kaoru Yamamoto
发明人： Masamichi Hara , Atsushi Gomi , Shinji Maekawa , Satoshi Taga , Kaoru Yamamoto
IPC分类号： C23C16/458 , H01L21/67 , C23C16/52
CPC分类号： H01L21/67103 , C23C16/4586 , C23C16/52 , H01L21/67109
摘要： A substrate mounting mechanism on which a target substrate is placed is provided. The substrate mounting mechanism includes a heater plate, which has a substrate mounting surface on which the target substrate is placed and has a heater embedded therein to heat the substrate to a deposition temperature at which a film is deposited. The substrate mounting mechanism also includes a temperature control jacket, which is formed to cover at least a surface of the heater plate other than the substrate mounting surface and adjusts the temperature to a non-deposition temperature below the deposition temperature.
摘要翻译：设置放置目标基板的基板安装机构。基板安装机构包括加热板，该加热板具有放置目标基板的基板安装表面，并且嵌入有加热器，以将基板加热到沉积膜的沉积温度。衬底安装机构还包括温度控制护套，其形成为覆盖加热器板的除了衬底安装表面之外的至少一个表面，并将温度调节到低于沉积温度的非沉积温度。

4. 发明申请

US20100062158A1 GAS SUPPLY METHOD AND GAS SUPPLY DEVICE 审中-公开
标题翻译：气体供应方法和气体供应装置
公开(公告)号：US20100062158A1
公开(公告)日：2010-03-11
申请号：US12568421
申请日：2009-09-28
申请人： Masamichi Hara , Atsushi Gomi , Osamu Yokoyama , Toshimasa Tanaka , Shinji Maekawa , Satoshi Taga
发明人： Masamichi Hara , Atsushi Gomi , Osamu Yokoyama , Toshimasa Tanaka , Shinji Maekawa , Satoshi Taga
IPC分类号： C23C16/448 , C23C16/52
CPC分类号： C23C16/4481 , C23C16/52
摘要： A gas supply method supplies a source gas produced by heating and sublimating a solid source material in a source material container to a consuming area. The method includes the steps of: (a) flowing a carrier gas through a processing gas supply line and measuring a gas pressure therein; (b) heating the solid source material to produce the source gas; (c) supplying a carrier gas which has the same flow rate as the carrier gas in the step (a) to the source material container and measuring a gas pressure in the processing gas supply line while flowing the source gas together with the carrier gas through the processing gas supply line; and (d) calculating the flow rate of the source gas based on the pressure measurement values obtained in the steps (a) and (c), and the flow rate of the carrier gas.
摘要翻译：气体供给方法将通过将源材料容器中的固体源材料进行加热和升华而产生的源气体供给到消耗区域。该方法包括以下步骤：（a）使载气流过处理气体供应管线并测量其中的气体压力; （b）加热固体源材料以产生源气体; （c）将与步骤（a）中的载气相同的流速的载气供给到原料容器，并在将原料气与载气一起流过的同时测量处理气体供应管线中的气体压力处理气体供应管线; 和（d）基于步骤（a）和（c）中获得的压力测量值和载气的流量计算源气体的流量。

5. 发明授权

US08912546B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08912546B2
公开(公告)日：2014-12-16
申请号：US12360551
申请日：2009-01-27
申请人： Shinji Maekawa
发明人： Shinji Maekawa
IPC分类号： H01L29/04 , H01L31/036 , H01L23/48 , H01L27/12
CPC分类号： H01L27/1214 , H01L27/1292
摘要： The present invention provides a technique by which a component forming a display device, such as a wiring can be formed with good adhesion.In the invention, a component forming a thin film transistor, a display device, or the like is formed with a material which is the same as at least one of the substances forming the formation subject surface added (mixed); thus, adhesion between the component and the formation subject is improved. An insulating layer formed over the component is formed with a laminate of a first insulating layer containing an organic material and a second insulating layer containing an inorganic material; thus, the insulating layer sufficiently covers irregularities on the surface of the component, and is also dense enough so as to be reliable as an insulating layer.
摘要翻译：本发明提供一种技术，通过该技术可以形成具有良好粘附性的形成诸如布线的显示装置的部件。在本发明中，形成薄膜晶体管，显示装置等的部件形成为与形成被加工物（混合）的至少一种物质相同的材料。从而提高了组分与形成对象之间的粘合性。形成在所述部件上的绝缘层由具有含有有机材料的第一绝缘层和含有无机材料的第二绝缘层的叠层形成; 因此，绝缘层充分地覆盖部件表面上的凹凸，并且也足够密实，以便作为绝缘层是可靠的。

6. 发明授权

US08535965B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US08535965B2
公开(公告)日：2013-09-17
申请号：US13540259
申请日：2012-07-02
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L23/58
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

7. 发明申请

US20120056550A1 DISPLAY DEVICE 有权
公开(公告)号：US20120056550A1
公开(公告)日：2012-03-08
申请号：US13293762
申请日：2011-11-10
申请人： Yasunori YOSHIDA , Hajime Kimura , Shinji Maekawa , Osamu Nakamura , Shunpei Yamazaki
发明人： Yasunori YOSHIDA , Hajime Kimura , Shinji Maekawa , Osamu Nakamura , Shunpei Yamazaki
IPC分类号： H05B37/02
CPC分类号： H01L27/156 , H01L21/288 , H01L21/76838 , H01L27/1285 , H01L27/1292 , H01L27/3248 , H01L27/3276
摘要： The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern.

8. 发明授权

US08003420B2 Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element 有权
标题翻译：具有半导体元件的显示装置及其制造方法以及安装有设置有半导体元件的显示装置的电子装置
公开(公告)号：US08003420B2
公开(公告)日：2011-08-23
申请号：US12834048
申请日：2010-07-12
申请人： Shinji Maekawa
发明人： Shinji Maekawa
IPC分类号： H01L21/336
CPC分类号： H01L51/0022 , G02F2001/136295 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696 , H01L51/102
摘要： According to one feature of the invention, a region of an insulating film surface at least overlapped with a part of a gate electrode or wiring is coated with an organic agent; a fluid in which conductive fine particles are dispersed in an organic solvent is discharged by a droplet discharging method in the insulating film surface ranging from a region where the organic agent is coated and left to a region where the organic agent is not coated. The organic agent is coated to improve wettability of the fluid in the insulating film surface, and one of each ends of the source electrode and the drain electrode adjacent to each other by interposing the curve therebetween is formed by being curved in a concave and the other end is formed by being curved in a convex.
摘要翻译：根据本发明的一个特征，至少与栅电极或布线的一部分重叠的绝缘膜表面的区域被涂覆有机物; 将导电性细颗粒分散在有机溶剂中的流体通过液滴排放法在绝缘膜表面排出，范围从有机试剂被涂覆的区域到有机试剂未被涂覆的区域。涂覆有机试剂以改善绝缘膜表面中的流体的润湿性，并且通过插入其间的曲线彼此相邻的源电极和漏电极的每个端部中的一个通过弯曲成凹入而形成，而另一个端部通过弯曲成凸形而形成。

9. 发明授权

US07863114B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07863114B2
公开(公告)日：2011-01-04
申请号：US11971085
申请日：2008-01-08
申请人： Shinji Maekawa , Hidekazu Miyairi
发明人： Shinji Maekawa , Hidekazu Miyairi
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78609 , H01L29/78675
摘要： The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film is formed on an insulating surface, a metal element for promoting crystallization is added to the amorphous semiconductor film, the amorphous semiconductor film is heated to form a crystallized semiconductor film, a continuous wave laser beam is irradiated to the crystallized semiconductor film, and an upper portion of the crystallized semiconductor film is removed.
摘要翻译：本发明提供一种从不使用金属元素而获得的结晶半导体膜有效地去除金属元素的方法。在本发明中，在绝缘面上形成非晶半导体膜，在非晶半导体膜上添加用于促进结晶的金属元素，将非晶半导体膜加热形成结晶化的半导体膜，照射连续波激光结晶化的半导体膜，去除结晶化半导体膜的上部。

10. 发明授权

US07800113B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07800113B2
公开(公告)日：2010-09-21
申请号：US11826815
申请日：2007-07-18
申请人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
发明人： Hironobu Shoji , Shinji Maekawa , Kensuke Yoshizumi , Tatsuya Honda , Yukie Suzuki , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L51/56 , H01L27/1277 , H01L27/1292 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L29/42384 , H01L29/458 , H01L29/66757 , H01L29/78675 , H01L29/78696 , H01L51/0005 , H01L51/524 , H01L51/5253 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323 , Y02P80/30
摘要： The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
摘要翻译：本发明提供了一种用于制造具有TFT的显示装置的方法，所述显示装置可以在使用少量光掩模的情况下高速运转并且提高难以改变阈值的材料的利用效率。在本发明中，将催化元件施加到非晶半导体膜上，并加热非晶半导体膜以形成结晶半导体膜。在从晶体半导体膜去除催化元素之后，制造具有平面结构的顶栅型薄膜晶体管。此外，通过使用选择性地形成显示装置的元件的液滴喷射方法，可以简化该过程，并且可以减少材料的损失。

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