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1. 发明申请

US20120270413A1 Silicon Nitride Film, A Semiconductor Device, A Display Device and a Method for Manufacturing a Silicon Nitride Film 有权
标题翻译：氮化硅膜，A半导体器件，显示装置和氮化硅膜的制造方法
公开(公告)号：US20120270413A1
公开(公告)日：2012-10-25
申请号：US13540259
申请日：2012-07-02
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的阻挡特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

2. 发明授权

US08535965B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US08535965B2
公开(公告)日：2013-09-17
申请号：US13540259
申请日：2012-07-02
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L23/58
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

3. 发明申请

US20070253881A1 A Silicon Nitride Film, A Semiconductor Device, A Display Device and a Method for Manufacturing a Silicon Nitride Film 有权
标题翻译：氮化硅膜，A半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US20070253881A1
公开(公告)日：2007-11-01
申请号：US11773799
申请日：2007-07-05
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： C01B33/021 , C23C4/04
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，将硅烷（SiH 4 N 3），氮（N 2/2）和稀有气体引入沉积室反应压力在0.01Torr至0.1Torr的范围内。

4. 发明授权

US07274038B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US07274038B2
公开(公告)日：2007-09-25
申请号：US10873285
申请日：2004-06-23
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L29/04 , H01L31/20 , H01L31/0376 , H01L27/12
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，将硅烷（SiH 4 N 3），氮（N 2/2）和稀有气体引入沉积室反应压力在0.01Torr至0.1Torr的范围内。

5. 发明授权

US08227805B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US08227805B2
公开(公告)日：2012-07-24
申请号：US11773799
申请日：2007-07-05
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L29/04
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

6. 发明申请

US20060051914A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20060051914A1
公开(公告)日：2006-03-09
申请号：US11218329
申请日：2005-09-02
申请人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
发明人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1266 , H01L27/1277 , H01L27/1292 , H01L29/66765
摘要： An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.
摘要翻译：在衬底上形成非晶半导体膜和包含选自元素周期表第15族的元素的半导体膜。形成包括岛状非晶半导体膜和岛状半导体膜的岛状区域。源极电极和漏电极形成在岛状区域上。使用源电极和漏极作为掩模去除未被源电极和漏电极覆盖的岛状半导体膜。此时，岛状非晶半导体膜的厚度减小，并且一部分岛状非晶半导体膜露出。将促进结晶的催化元素加入其中暴露岛状非晶半导体膜的区域。通过热处理，岛状非晶半导体膜结晶化，催化元素被吸收。

7. 发明授权

US07416928B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07416928B2
公开(公告)日：2008-08-26
申请号：US11218329
申请日：2005-09-02
申请人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
发明人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1266 , H01L27/1277 , H01L27/1292 , H01L29/66765
摘要： An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.
摘要翻译：在衬底上形成非晶半导体膜和包含选自元素周期表第15族的元素的半导体膜。形成包括岛状非晶半导体膜和岛状半导体膜的岛状区域。源极电极和漏电极形成在岛状区域上。使用源电极和漏极作为掩模去除未被源电极和漏电极覆盖的岛状半导体膜。此时，岛状非晶半导体膜的厚度减小，并且一部分岛状非晶半导体膜露出。将促进结晶的催化元素加入其中暴露岛状非晶半导体膜的区域。通过热处理，岛状非晶半导体膜结晶化，催化元素被吸收。

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