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1. 发明申请

US20070253881A1 A Silicon Nitride Film, A Semiconductor Device, A Display Device and a Method for Manufacturing a Silicon Nitride Film 有权
标题翻译：氮化硅膜，A半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US20070253881A1
公开(公告)日：2007-11-01
申请号：US11773799
申请日：2007-07-05
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： C01B33/021 , C23C4/04
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，将硅烷（SiH 4 N 3），氮（N 2/2）和稀有气体引入沉积室反应压力在0.01Torr至0.1Torr的范围内。

2. 发明授权

US07274038B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US07274038B2
公开(公告)日：2007-09-25
申请号：US10873285
申请日：2004-06-23
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L29/04 , H01L31/20 , H01L31/0376 , H01L27/12
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，将硅烷（SiH 4 N 3），氮（N 2/2）和稀有气体引入沉积室反应压力在0.01Torr至0.1Torr的范围内。

3. 发明申请

US20120270413A1 Silicon Nitride Film, A Semiconductor Device, A Display Device and a Method for Manufacturing a Silicon Nitride Film 有权
标题翻译：氮化硅膜，A半导体器件，显示装置和氮化硅膜的制造方法
公开(公告)号：US20120270413A1
公开(公告)日：2012-10-25
申请号：US13540259
申请日：2012-07-02
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的阻挡特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

4. 发明授权

US08535965B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US08535965B2
公开(公告)日：2013-09-17
申请号：US13540259
申请日：2012-07-02
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L23/58
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

5. 发明授权

US08227805B2 Silicon nitride film, a semiconductor device, a display device and a method for manufacturing a silicon nitride film 有权
标题翻译：氮化硅膜，半导体器件，显示器件和氮化硅膜的制造方法
公开(公告)号：US08227805B2
公开(公告)日：2012-07-24
申请号：US11773799
申请日：2007-07-05
申请人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
发明人： Shinji Maekawa , Tetsuya Kakehata , Yuuichi Takehara
IPC分类号： H01L29/04
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L27/3244 , H01L51/0022 , H01L51/5228 , H01L51/5253
摘要： The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.
摘要翻译：本发明提供了一种通过等离子体CVD形成可以在热敏元件上形成的氮化硅膜以及电致发光元件并具有良好的屏障特性的方法。此外，本发明还提供一种通过使用氮化硅膜形成的半导体器件，显示器件和发光显示器件。在通过等离子体CVD形成氮化硅膜的方法中，在沉积中将硅烷（SiH4），氮（N2）和稀有气体引入淀积室中，反应压力在0.01托至0.1托的范围内。

6. 发明申请

US20060051914A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20060051914A1
公开(公告)日：2006-03-09
申请号：US11218329
申请日：2005-09-02
申请人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
发明人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1266 , H01L27/1277 , H01L27/1292 , H01L29/66765
摘要： An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.
摘要翻译：在衬底上形成非晶半导体膜和包含选自元素周期表第15族的元素的半导体膜。形成包括岛状非晶半导体膜和岛状半导体膜的岛状区域。源极电极和漏电极形成在岛状区域上。使用源电极和漏极作为掩模去除未被源电极和漏电极覆盖的岛状半导体膜。此时，岛状非晶半导体膜的厚度减小，并且一部分岛状非晶半导体膜露出。将促进结晶的催化元素加入其中暴露岛状非晶半导体膜的区域。通过热处理，岛状非晶半导体膜结晶化，催化元素被吸收。

7. 发明授权

US07416928B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07416928B2
公开(公告)日：2008-08-26
申请号：US11218329
申请日：2005-09-02
申请人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
发明人： Tetsuya Kakehata , Yuuichi Takehara , Yasuhiro Jinbo
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1266 , H01L27/1277 , H01L27/1292 , H01L29/66765
摘要： An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.
摘要翻译：在衬底上形成非晶半导体膜和包含选自元素周期表第15族的元素的半导体膜。形成包括岛状非晶半导体膜和岛状半导体膜的岛状区域。源极电极和漏电极形成在岛状区域上。使用源电极和漏极作为掩模去除未被源电极和漏电极覆盖的岛状半导体膜。此时，岛状非晶半导体膜的厚度减小，并且一部分岛状非晶半导体膜露出。将促进结晶的催化元素加入其中暴露岛状非晶半导体膜的区域。通过热处理，岛状非晶半导体膜结晶化，催化元素被吸收。

8. 发明授权

US08633542B2 SOI substrate and manufacturing method thereof 有权
公开(公告)号：US08633542B2
公开(公告)日：2014-01-21
申请号：US13230086
申请日：2011-09-12
申请人： Tetsuya Kakehata , Hideto Ohnuma , Yoshiaki Yamamoto , Kenichiro Makino
发明人： Tetsuya Kakehata , Hideto Ohnuma , Yoshiaki Yamamoto , Kenichiro Makino
IPC分类号： H01L27/12 , H01L29/02
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

9. 发明授权

US08207045B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08207045B2
公开(公告)日：2012-06-26
申请号：US12692768
申请日：2010-01-25
申请人： Tetsuya Kakehata , Kazutaka Kuriki
发明人： Tetsuya Kakehata , Kazutaka Kuriki
IPC分类号： H01L21/302
CPC分类号： H01L21/76254 , Y10S438/977
摘要： An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
摘要翻译：即使在使用氮化硅膜等作为接合层的情况下，也可以减少基底基板与半导体基板之间的不良接合的发生。另一个目的是提供一种用于制造可以抑制步数增加的SOI衬底的方法。制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

10. 发明授权

US07994022B2 Semiconductor substrate and semiconductor device and manufacturing method of the same 有权
标题翻译：半导体衬底和半导体器件及其制造方法相同
公开(公告)号：US07994022B2
公开(公告)日：2011-08-09
申请号：US12249437
申请日：2008-10-10
申请人： Tetsuya Kakehata
发明人： Tetsuya Kakehata
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/2007 , H01L21/321 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C.
摘要翻译：提供具有SOI层的半导体衬底。在SOI层和玻璃基板之间，提供由一层或多层磷硅酸盐玻璃，硼硅酸盐玻璃和/或硼磷硅酸盐玻璃形成的接合层，使用有机硅烷作为一种材料，通过热CVD法在温度为500°C至800°C

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