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1. 发明授权

US5061144A Resist process apparatus 失效
标题翻译：抗蚀加工设备
公开(公告)号：US5061144A
公开(公告)日：1991-10-29
申请号：US442535
申请日：1989-11-28
申请人： Masami Akimoto , Yoshio Kimura , Osamu Hirakawa , Noriyuki Anai , Masanori Tateyama , Yasuhiro Sakamoto
发明人： Masami Akimoto , Yoshio Kimura , Osamu Hirakawa , Noriyuki Anai , Masanori Tateyama , Yasuhiro Sakamoto
IPC分类号： G03F7/26 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68707 , G03F7/26 , H01L21/67778 , Y10S414/135 , Y10S414/137
摘要： A resist process apparatus of the invention serves to load/unload a semiconductor wafer in/from the respective process mechanisms. The apparatus includes a wafer holding member for holding a semiconductor wafer, and X, Y, Z and .theta. driving mechanisms for conveying the wafer holding member to a resist coating mechanism and the like. The wafer holding member includes a support frame which is larger than diameter of a semiconductor wafer, and a plurality of support members, arranged on the support frame, for supporting the semiconductor wafer in partial contact with the peripheral portion of the semiconductor wafer. Since the contact area between the support members and a semiconductor wafer is small, changes in temperature of the semiconductor, when it is held, are small.
摘要翻译：本发明的抗蚀剂处理装置用于在各个加工机构中加载/卸载半导体晶片。该装置包括用于保持半导体晶片的晶片保持构件和用于将晶片保持构件输送到抗蚀剂涂覆机构等的X，Y，Z和θ驱动机构。晶片保持构件包括比半导体晶片的直径大的支撑框架和布置在支撑框架上的多个支撑构件，用于支撑半导体晶片与半导体晶片的周边部分部分接触。由于支撑构件和半导体晶片之间的接触面积小，因此在保持时半导体的温度变化小。

2. 发明授权

US5089305A Coating apparatus and method for applying a liquid to a semiconductor wafer including selecting a nozzle on a stand by state 失效
标题翻译：涂料装置和液体应用于半导体滤波器的方法，包括按状态选择喷嘴的喷嘴
公开(公告)号：US5089305A
公开(公告)日：1992-02-18
申请号：US585199
申请日：1990-09-20
申请人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
发明人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
IPC分类号： B05B15/02 , B05C11/08 , G03F7/16
CPC分类号： B05B15/025 , B05C11/08 , G03F7/162
摘要： Disclosed is a coating apparatus for applying a resist or developing solution to a semiconductor wafer. This coating apparatus comprises a plurality of nozzles supplied with various resist from a resist source and each adapted to drip the different solution onto the wafer, a vessel in which the nozzles is kept on stand-by, while maintaining the liquids in a predetermined state in the vicinity of discharge port portions of the nozzles, when the nozzles need not be operated, and a nozzle operating mechanism for selecting one of the nozzles kept on stand-by in the vessel, and transporting the selected nozzle to the location of the wafer, whereby the resist is applied to the wafer by means of only the nozzle transported by the nozzle operating mechanism.

3. 发明授权

US5028955A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US5028955A
公开(公告)日：1991-07-02
申请号：US480005
申请日：1990-02-14
申请人： Yasushi Hayashida , Noriyuki Anai , Osamu Hirakawa , Masami Akimoto , Yasuhiro Sakamoto , Keisuke Shigaki , Masashi Moriyama
发明人： Yasushi Hayashida , Noriyuki Anai , Osamu Hirakawa , Masami Akimoto , Yasuhiro Sakamoto , Keisuke Shigaki , Masashi Moriyama
IPC分类号： G03F7/20
CPC分类号： G03F7/70725 , G03F7/2051
摘要： An exposure apparatus of this invention is used in an exposure process of semiconductor and LCD devices. The exposure apparatus includes a stage on which a semiconductor wafer is placed, a rotating mechanism for rotating the stage, a radiation unit arranged to oppose a support surface of the stage, a slider mechanism for reciprocating the radiation unit along a straight line passing through the center of the support surface of the stage, an exposure range input unit for inputting a desired exposure range of the wafer, an exposure range memory unit for storing the input exposure range, a CCD image sensor for detecting a reference position of the wafer, a relative position detector for detecting a relative position between the detected reference position and the radiation unit, a controller for controlling the sliding mechanism in correspondence with the relative position and the exposure range, and a light amount control mechanism for controlling an amount of light radiated from the irradiation mechanism to the wafer in correspondence with the relative position and the exposure range.
摘要翻译：本发明的曝光装置用于半导体和LCD装置的曝光处理。曝光装置包括其上放置有半导体晶片的台，用于旋转台的旋转机构，布置成与舞台的支撑表面相对的辐射单元，用于使辐射单元沿着穿过舞台的支撑表面的中心，用于输入晶片的期望曝光范围的曝光范围输入单元，用于存储输入曝光范围的曝光范围存储单元，用于检测晶片的参考位置的CCD图像传感器，相对位置检测器，用于检测检测到的基准位置和辐射单元之间的相对位置，控制器，用于根据相对位置和曝光范围来控制滑动机构;以及光量控制机构，用于控制从对应于相对位置和曝光范围的到晶片的照射机构。

4. 发明授权

US5002008A Coating apparatus and method for applying a liquid to a semiconductor wafer, including selecting a nozzle in a stand-by state 失效
标题翻译：将液体施加到半导体晶片的涂布装置和方法，包括在待机状态下选择喷嘴
公开(公告)号：US5002008A
公开(公告)日：1991-03-26
申请号：US357279
申请日：1989-05-26
申请人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
发明人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
IPC分类号： B05B15/02 , B05C11/08 , G03F7/16
CPC分类号： B05B15/025 , B05C11/08 , G03F7/162
摘要： Disclosed is a coating apparatus for applying a resist or developing solution to a semiconductor wafer. This coating apparatus comprises a plurality of nozzles supplied with various resist from a resist source and each adapted to drip the different solution onto the wafer, a vessel in which the nozzles is kept on stand-by, while maintaining the liquids in a predetermined state in the vicinity of discharge port portions of the nozzles, when the nozzles need not be operated, and a nozzle operating mechanism for selecting one of the nozzles kept on stand-by in the vessel, and transporting the selected nozzle to the location of the wafer, whereby the resist is applied to the wafer by means of only the nozzle transported by the nozzle operating mechanism.
摘要翻译：公开了一种将抗蚀剂或显影液施加到半导体晶片的涂布装置。该涂布装置包括从抗蚀剂源供给各种抗蚀剂的多个喷嘴，每个喷嘴适于将不同的溶液滴到晶片上，其中喷嘴保持待机的容器，同时将液体保持在预定状态喷嘴的排出口部分附近，当喷嘴不需要操作时，以及喷嘴操作机构，用于选择在容器中保持待机的喷嘴之一，并将所选择的喷嘴输送到晶片的位置，由此通过仅由喷嘴操作机构传送的喷嘴将抗蚀剂施加到晶片。

5. 发明授权

US06368776B1 Treatment apparatus and treatment method 有权
标题翻译：治疗仪器及治疗方法
公开(公告)号：US06368776B1
公开(公告)日：2002-04-09
申请号：US09270806
申请日：1999-03-17
申请人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
发明人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
IPC分类号： G03C500
CPC分类号： H01L21/67253 , H01L21/67109 , H01L21/6715 , H01L21/67248
摘要： A gas supplied from a gas source is exposed to an atmosphere above a liquid surface in a tank saving the liquid and thereafter is supplied around a wafer in a treatment chamber through a gas supply passage and a supply port. The gas supplied around the wafer uniformly flows from around the wafer toward above the center of the wafer and thereafter is discharged from an exhaust port which is formed at the top of the treatment chamber. Meanwhile, with respect to the wafer, heat treatment is performed by a heating mechanism and a predetermined PEB is carried out. The humidified gas is supplied into the treatment chamber, thereby preventing drying in the treatment chamber. Therefore, water in resist is not taken out, resulting in that a required resist pattern can be formed on the wafer.
摘要翻译：从气源供给的气体暴露在储存液体的槽内的液面以上的气氛中，然后通过气体供给通路和供给口在处理室内的晶片供给。在晶片周围供给的气体均匀地从晶片周围朝向晶片的中心方向流动，之后从形成在处理室顶部的排气口排出。同时，相对于晶片，通过加热机构进行热处理，进行规定的PEB。将加湿气体供给到处理室，防止处理室内的干燥。因此，抗蚀剂中的水不会被取出，导致可以在晶片上形成所需的抗蚀剂图案。

6. 发明申请

US20070194005A1 Heating apparatus, heating method, coating apparatus, and storage medium 失效
标题翻译：加热装置，加热方法，涂布装置和存储介质
公开(公告)号：US20070194005A1
公开(公告)日：2007-08-23
申请号：US11707061
申请日：2007-02-16
申请人： Osamu Hirakawa , Masami Akimoto , Shinichi Hayashi
发明人： Osamu Hirakawa , Masami Akimoto , Shinichi Hayashi
IPC分类号： A21B1/00
CPC分类号： H01L21/67109 , H01L21/67748 , Y10S198/952
摘要： A heating apparatus cooling a substrate heated by a hot plate at a cooling position adjacent to the hot plate, capable of achieving a smaller height and reducing an operation time in the apparatus, in which contamination of the substrate by particles or the like is less likely, and the like, are provided. The heating apparatus includes a hot plate for heating a wafer representing a substrate from below, in a heating chamber having a wafer load/unload port. In addition, a wire for transferring the wafer between a cooling position of the substrate adjacent to the load/unload port of the heating chamber (position above a cooling plate) and a position above the hot plate is provided and extends. The wafer is mounted on a gap forming member provided on the wire, and thereafter loaded into the heating chamber.
摘要翻译：一种加热装置，用于在与热板相邻的冷却位置处冷却由热板加热的基板，能够实现较小的高度，并减少在该装置中的操作时间，其中由于颗粒等污染基板的可能性较小，等等。加热装置包括用于在具有晶片装载/卸载端口的加热室中从下方加热表示基板的晶片的热板。此外，提供并延伸用于将晶片在与加热室的加载/卸载端口相邻的冷却位置（位于冷却板的上方）之间传送晶片的导线和热板上方的位置。将晶片安装在设置在线材上的间隙形成部件上，然后装入加热室。

7. 发明授权

US07838801B2 Heating apparatus, heating method, coating apparatus, and storage medium 失效
标题翻译：加热装置，加热方法，涂布装置和存储介质
公开(公告)号：US07838801B2
公开(公告)日：2010-11-23
申请号：US11707061
申请日：2007-02-16
申请人： Osamu Hirakawa , Masami Akimoto , Shinichi Hayashi
发明人： Osamu Hirakawa , Masami Akimoto , Shinichi Hayashi
IPC分类号： H01L21/68 , B65G15/10 , B65H5/02 , F27B5/06 , F27B5/12
CPC分类号： H01L21/67109 , H01L21/67748 , Y10S198/952
摘要： A heating apparatus cooling a substrate heated by a hot plate at a cooling position adjacent to the hot plate, capable of achieving a smaller height and reducing an operation time in the apparatus, in which contamination of the substrate by particles or the like is less likely, and the like, are provided. The heating apparatus includes a hot plate for heating a wafer representing a substrate from below, in a heating chamber having a wafer load/unload port. In addition, a wire for transferring the wafer between a cooling position of the substrate adjacent to the load/unload port of the heating chamber (position above a cooling plate) and a position above the hot plate is provided and extends. The wafer is mounted on a gap forming member provided on the wire, and thereafter loaded into the heating chamber.
摘要翻译：一种加热装置，用于在与热板相邻的冷却位置处冷却由热板加热的基板，能够实现较小的高度，并且减少了由于颗粒等引起的基板污染的装置中的操作时间。，等等。加热装置包括用于在具有晶片装载/卸载端口的加热室中从下方加热表示基板的晶片的热板。此外，提供并延伸用于将晶片在与加热室的加载/卸载端口相邻的冷却位置（位于冷却板的上方）之间传送晶片的导线和热板上方的位置。将晶片安装在设置在线材上的间隙形成部件上，然后装入加热室。

8. 发明授权

US5626675A Resist processing apparatus, substrate processing apparatus and method of transferring a processed article 失效
标题翻译：抗蚀剂处理装置，基板处理装置以及转印加工品的方法
公开(公告)号：US5626675A
公开(公告)日：1997-05-06
申请号：US340758
申请日：1994-11-16
申请人： Yasuhiro Sakamoto , Masami Akimoto , Kiyohisa Tateyama , Shinzi Kitamura
发明人： Yasuhiro Sakamoto , Masami Akimoto , Kiyohisa Tateyama , Shinzi Kitamura
IPC分类号： H01L21/683 , H01L21/687 , B05C13/00
CPC分类号： H01L21/6715 , H01L21/6838 , H01L21/68707 , Y10S134/902 , Y10S414/135
摘要： A substrate processing apparatus has an article transferring unit for transferring articles, and an arm assembly is provided on the transferring unit. Each arm of the arm assembly is provided with pawls for contacting and supporting undersurface portions of the peripheral side wall of each of the articles, and one or more sucking portions are provided on the upper surface of the arm and are disposed above the corresponding pawl or pawls. The pawls, or the sucking portion or sucking portions are selected for every process, and supporting or holding of each of the articles and the required transfer of each of the articles are performed. The transfer can be performed by changing the operating range of each of the arms without replacing the arms. Taking each of the articles in and out of the processing units are carried out smoothly and a series of processes are achieve efficiently.
摘要翻译：基板处理设备具有用于传送物品的物品传送单元，并且在传送单元上设置有臂组件。臂组件的每个臂设置有用于接触和支撑每个制品的周边侧壁的下表面部分的棘爪，并且在臂的上表面上设置一个或多个抽吸部分，并且设置在相应的棘爪或爪子为每个处理选择爪或抽吸部或抽吸部，并且执行每个物品的支撑或保持以及每个物品的所需转移。可以通过改变每个臂的操作范围而不更换臂来执行转移。将每个物品进出处理单元顺利进行，并且有效地实现一系列处理。

9. 发明申请

US20060165409A1 Coating and developing system and coating and developing method 有权
标题翻译：涂层开发系统及涂层开发方法
公开(公告)号：US20060165409A1
公开(公告)日：2006-07-27
申请号：US11335635
申请日：2006-01-20
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： G03D5/00
CPC分类号： H01L21/67184 , H01L21/00 , H01L21/6715 , H01L21/67178 , H01L21/6719
摘要： A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.
摘要翻译：涂覆显影系统包括：抗蚀剂膜形成单元块和层叠的抗反射膜形成单元块，以形成抗蚀剂膜和抗反射膜下面的抗反射膜以及在小空间中覆盖抗蚀剂膜的抗反射膜。涂层显影系统能够应对形成防反射膜的情况和没有形成任何抗反射膜的情况，并且需要简单的软件。成膜单位块，即TCT层B 3，COT层B 4和BCT层B 5以及显影单元块，即DEV层B 1和B 2，层叠在处理块S 在形成防反射膜的情况下选择性地使用TCT层B 3，COT层B 4和BCT层B 5以及未形成任何抗反射膜的情况。涂层和显影系统由简单的携带程序和简单的软件控制。

10. 发明授权

US07245348B2 Coating and developing system and coating and developing method with antireflection film and an auxiliary block for inspection and cleaning 有权
标题翻译：涂层和显影系统以及具有防反射膜和辅助块的检测和清洁的涂层和显影方法
公开(公告)号：US07245348B2
公开(公告)日：2007-07-17
申请号：US11117566
申请日：2005-04-29
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： G03B27/52
CPC分类号： H01L21/67184 , H01L21/6715 , H01L21/67178 , H01L21/6719
摘要： A coating and developing system includes an auxiliary block, a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with either a case where antireflection films are formed or a case where no antireflection film is formed. Film forming unit blocks, namely, a TCT layer, a COT layer and a BCT layer, and developing unit blocks, namely, DEV layers, are stacked up in layers in a processing block S2. The TCT layer, the COT layer and the BCT layer are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a carrying program.
摘要翻译：涂覆显影系统包括辅助块，抗蚀剂膜形成单元块和层叠的抗反射膜形成单元块，以形成抗蚀剂膜和抗蚀剂膜下面的抗反射膜，以及抗反射膜，覆盖抗蚀剂膜空间。涂覆和显影系统可以应对形成防反射膜的情况或不形成抗反射膜的情况。成膜单位块，即TCT层，COT层和BCT层，以及显影单元块，即DEV层，在处理块S2中层叠。在形成防反射膜的情况下选择性地使用TCT层，COT层和BCT层以及未形成任何抗反射膜的情况。涂层和显影系统由携带程序控制。

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