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    • 1. 发明授权
    • Developing treatment apparatus and developing treatment method
    • 开发治疗仪器和开发治疗方法
    • US07766566B2
    • 2010-08-03
    • US11495732
    • 2006-07-31
    • Takahiro KitanoMasami AkimotoShuuichi NishikidoDai Kumagai
    • Takahiro KitanoMasami AkimotoShuuichi NishikidoDai Kumagai
    • G03D5/04
    • G03D5/04G03F7/30G03F7/3021H01L21/6715H01L21/67748Y10S134/902
    • In the present invention, a substrate transfer unit into/from which a substrate is transferred from/to the outside of a treatment container and a developing treatment unit in which development of the substrate is performed are arranged side by side in the treatment container, and a carrier mechanism is provided which carries the substrate while grasping an outside surface of the substrate from both sides, between the substrate transfer unit and the developing treatment unit. A developing solution supply nozzle for supplying a developing solution onto the substrate and a gas blow nozzle for blowing a gas to the substrate, are provided between the substrate transfer unit and the developing treatment unit and above a carriage path along which the substrate is carried, and a cleaning solution supply nozzle is provided in the developing treatment unit for supplying a cleaning solution onto the substrate. According to the present invention, since the substrate is carried with its outside surface being grasped, spread of contamination can be prevented to restrain generation of particles in the treatment container.
    • 在本发明中,在处理容器中并排设置有将基板从处理容器的外部转移到基板转移单元和进行基板的显影的显影处理单元,并且 提供了一种承载机构,其承载基板,同时从基板转印单元和显影处理单元之间的两侧抓住基板的外表面。 用于将显影液供给到基板上的显影液供给喷嘴和用于将气体吹送到基板的气体吹出喷嘴设置在基板转印单元和显影处理单元之间以及载置基板的滑架路径上方, 并且在显影处理单元中设置清洁液供给喷嘴,用于将清洗液供给到基板上。 根据本发明,由于基板的外表面被抓住,因此可以防止污染物的扩散,从而抑制处理容器中的颗粒的产生。
    • 2. 发明申请
    • Liquid processing system
    • 液体处理系统
    • US20080023049A1
    • 2008-01-31
    • US11878385
    • 2007-07-24
    • Kazuhisa MatsumotoSatoshi KanekoMasami AkimotoTakayuki ToshimaNorihiro Ito
    • Kazuhisa MatsumotoSatoshi KanekoMasami AkimotoTakayuki ToshimaNorihiro Ito
    • B08B3/04
    • H01L21/67051H01L21/67017H01L21/6708H01L21/67173
    • A liquid processing system includes a liquid processing section including liquid processing units horizontally disposed therein and each configured to perform a liquid process while supplying a process liquid onto a substrate; a process liquid storing section that stores the process liquid to be supplied to the liquid processing units of the liquid processing section; and a piping unit including a supply pipe configured to guide the process liquid from the process liquid storing section to the liquid processing units. The process liquid storing section, the piping unit, and the liquid processing section are disposed inside a common casing in this order from below. The supply pipe of the piping unit has a horizontal pipe portion horizontally extending along an array direction of the liquid processing units, such that the process liquid is supplied from the horizontal pipe portion to the liquid processing units individually.
    • 液体处理系统包括液体处理部分,其包括水平地设置在其中的液体处理单元,并且每个液体处理部件被配置为在将处理液体供应到基板上时进行液体处理; 处理液体存储部,其存储要供给到液体处理部的液体处理单元的处理液; 以及管道单元,其包括供给管,其构造成将处理液从所述处理液储存部引导到所述液体处理单元。 处理液收容部,配管部和液处理部从下方依次配置在公共壳体的内部。 管道单元的供给管具有沿着液体处理单元的排列方向水平延伸的水平管部分,使得处理液体从水平管部分分别供应到液体处理单元。
    • 5. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US06515731B1
    • 2003-02-04
    • US09559472
    • 2000-04-27
    • Masami Akimoto
    • Masami Akimoto
    • G03B2732
    • H01L21/67178G03F7/162H01L21/67109H01L21/6715H01L21/67184H01L21/67225
    • A substrate processing apparatus configured to process a substrate by a photolithography process, comprising a plurality of heating sections for heating substrate, respectively, a plurality of first cooling sections, the number of which is equal to or smaller than the number of the heating sections, for cooling the substrate heated in the heating section to a first temperature, a second cooling section for further cooling the substrate cooled in the first cooling section to a second temperature lower than the first temperature, and a plurality of liquid process sections for supplying a process liquid to the substrate cooled in the second cooling section to form a liquid film of the process liquid on the substrate.
    • 一种基板处理装置,其被配置为通过光刻处理处理基板,所述基板处理装置包括多个用于加热基板的加热部分,所述多个第一冷却部分的数量等于或小于所述加热部分的数量, 用于将在所述加热部中加热的所述基板冷却至第一温度;第二冷却部,用于将在所述第一冷却部中冷却的所述基板进一步冷却至低于所述第一温度的第二温度;以及多个液体处理部, 液体流到在第二冷却部分中冷却的衬底,以在衬底上形成工艺液体的液膜。
    • 7. 发明授权
    • Substrate processing apparatus
    • 基板加工装置
    • US06464789B1
    • 2002-10-15
    • US09589404
    • 2000-06-08
    • Masami Akimoto
    • Masami Akimoto
    • B05C1100
    • H01L21/67109Y10S414/135
    • A cooling processing unit for cooling a wafer to a predetermined temperature is disposed between a heat processing unit and a set of a resist coating processing unit and a developing processing unit. Pre-cooling units are stacked in multi-stages on top of the cooling processing unit. Immediately after having undergone heat processing in the heat processing unit, the wafer is first transferred to the pre-cooling unit by a first transfer machine. Thereafter, the wafer is transferred to the cooling processing unit by a third transfer machine to be cooled to the predetermined temperature, and then transferred to the resist coating processing unit by a second transfer machine. Thus, over-bake of the wafer can be prevented.
    • 在热处理单元和一组抗蚀剂涂布处理单元和显影处理单元之间设置用于将晶片冷却至预定温度的冷却处理单元。 预冷单元在冷却处理单元的顶部以多级堆叠。 在热处理单元中经过热处理之后,首先通过第一转印机将晶片转印到预冷单元。 此后,通过第三转印机将晶片转移到冷却处理单元,以冷却到预定温度,然后通过第二转印机转印到抗蚀剂涂布处理单元。 因此,可以防止晶片过度烘烤。
    • 8. 发明授权
    • Film forming method and film forming apparatus
    • 成膜方法和成膜装置
    • US06371667B1
    • 2002-04-16
    • US09545003
    • 2000-04-06
    • Takahiro KitanoMasami AkimotoTomohide MinamiMasateru Morikawa
    • Takahiro KitanoMasami AkimotoTomohide MinamiMasateru Morikawa
    • G03D500
    • G03D5/00
    • A resist solution discharge nozzle for discharging a resist solution to a wafer is moved at a constant speed along a radial direction of the wafer while the wafer is being rotated. During this movement, the amount of the resist solution to be discharged from the resist solution discharge nozzle is gradually decreased. The resist solution discharged to the wafer is applied to the front surface of the wafer drawing a spiral track, and coating amounts of the resist solution per unit area with respect to a central portion and a peripheral portion of the wafer can be made equal. Accordingly, waste of a processing solution supplied onto a substrate can be eliminated, and a uniform processing solution film can be formed on the substrate.
    • 用于将抗蚀剂溶液放电到晶片的抗蚀剂溶液排出喷嘴在晶片旋转的同时沿着晶片的径向以恒定的速度移动。 在该运动中,从抗蚀剂溶液排出喷嘴排出的抗蚀剂溶液的量逐渐降低。 将排出到晶片的抗蚀剂溶液施加到晶片的前表面,从而绘制螺旋轨道,并且可以使相对于晶片的中心部分和周边部分的每单位面积的抗蚀剂溶液的涂布量相等。 因此,能够消除供给到基板上的处理液的浪费,能够在基板上形成均匀的处理液膜。
    • 10. 发明授权
    • Substrate processing system
    • 基板加工系统
    • US5942013A
    • 1999-08-24
    • US928023
    • 1997-09-11
    • Masami Akimoto
    • Masami Akimoto
    • G03F7/30B05C13/00H01L21/00H01L21/027H01L21/306H01L21/677B05D3/12
    • H01L21/67754B05C13/00H01L21/67173H01L21/67178Y10T29/41
    • A substrate processing system comprises a cassette mounting section having a plurality of cassettes arranged therein, a sub-arm mechanism for transferring the substrate into and out of the cassette within the cassette mounting section, a first transfer path of the sub-arm mechanism extending along the arrangement of the cassettes in the cassette mounting section, a process section including a heat treating section for heating or cooling the substrate and a liquid treating section in which a process liquid is applied to the substrate, a main arm mechanism for transfer of the substrate from and onto the sub-arm mechanism and from and into the process section, and a second transfer path of the main arm mechanism. The heat treating section is positioned higher than the first transfer path, interposed between the cassette mounting section and the second transfer path in respect of a horizontal plane, and comprises a plurality of compartments stacked one upon the other.
    • 基板处理系统包括:盒安装部,其具有布置在其中的多个盒;副臂机构,用于将所述基板传送到所述盒安装部内的所述盒;所述副臂机构的第一传送路径沿着 盒体在盒安装部分中的布置,包括用于加热或冷却基板的热处理部分的处理部分和其中将处理液体施加到基板的液体处理部分,用于传送基板的主臂机构 从副臂机构进入和进入加工部分,以及主臂机构的第二传送路径。 所述热处理部被定位成高于所述第一传送路径,相对于水平面插入在所述盒安装部和所述第二传送路径之间,并且包括多个彼此堆叠的隔间。