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1. 发明授权

US5061144A Resist process apparatus 失效
标题翻译：抗蚀加工设备
公开(公告)号：US5061144A
公开(公告)日：1991-10-29
申请号：US442535
申请日：1989-11-28
申请人： Masami Akimoto , Yoshio Kimura , Osamu Hirakawa , Noriyuki Anai , Masanori Tateyama , Yasuhiro Sakamoto
发明人： Masami Akimoto , Yoshio Kimura , Osamu Hirakawa , Noriyuki Anai , Masanori Tateyama , Yasuhiro Sakamoto
IPC分类号： G03F7/26 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68707 , G03F7/26 , H01L21/67778 , Y10S414/135 , Y10S414/137
摘要： A resist process apparatus of the invention serves to load/unload a semiconductor wafer in/from the respective process mechanisms. The apparatus includes a wafer holding member for holding a semiconductor wafer, and X, Y, Z and .theta. driving mechanisms for conveying the wafer holding member to a resist coating mechanism and the like. The wafer holding member includes a support frame which is larger than diameter of a semiconductor wafer, and a plurality of support members, arranged on the support frame, for supporting the semiconductor wafer in partial contact with the peripheral portion of the semiconductor wafer. Since the contact area between the support members and a semiconductor wafer is small, changes in temperature of the semiconductor, when it is held, are small.
摘要翻译：本发明的抗蚀剂处理装置用于在各个加工机构中加载/卸载半导体晶片。该装置包括用于保持半导体晶片的晶片保持构件和用于将晶片保持构件输送到抗蚀剂涂覆机构等的X，Y，Z和θ驱动机构。晶片保持构件包括比半导体晶片的直径大的支撑框架和布置在支撑框架上的多个支撑构件，用于支撑半导体晶片与半导体晶片的周边部分部分接触。由于支撑构件和半导体晶片之间的接触面积小，因此在保持时半导体的温度变化小。

2. 发明授权

US5089305A Coating apparatus and method for applying a liquid to a semiconductor wafer including selecting a nozzle on a stand by state 失效
标题翻译：涂料装置和液体应用于半导体滤波器的方法，包括按状态选择喷嘴的喷嘴
公开(公告)号：US5089305A
公开(公告)日：1992-02-18
申请号：US585199
申请日：1990-09-20
申请人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
发明人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
IPC分类号： B05B15/02 , B05C11/08 , G03F7/16
CPC分类号： B05B15/025 , B05C11/08 , G03F7/162
摘要： Disclosed is a coating apparatus for applying a resist or developing solution to a semiconductor wafer. This coating apparatus comprises a plurality of nozzles supplied with various resist from a resist source and each adapted to drip the different solution onto the wafer, a vessel in which the nozzles is kept on stand-by, while maintaining the liquids in a predetermined state in the vicinity of discharge port portions of the nozzles, when the nozzles need not be operated, and a nozzle operating mechanism for selecting one of the nozzles kept on stand-by in the vessel, and transporting the selected nozzle to the location of the wafer, whereby the resist is applied to the wafer by means of only the nozzle transported by the nozzle operating mechanism.

3. 发明授权

US5002008A Coating apparatus and method for applying a liquid to a semiconductor wafer, including selecting a nozzle in a stand-by state 失效
标题翻译：将液体施加到半导体晶片的涂布装置和方法，包括在待机状态下选择喷嘴
公开(公告)号：US5002008A
公开(公告)日：1991-03-26
申请号：US357279
申请日：1989-05-26
申请人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
发明人： Mitsuru Ushijima , Osamu Hirakawa , Masami Akimoto , Yoshio Kimura , Noriyuki Anai
IPC分类号： B05B15/02 , B05C11/08 , G03F7/16
CPC分类号： B05B15/025 , B05C11/08 , G03F7/162
摘要： Disclosed is a coating apparatus for applying a resist or developing solution to a semiconductor wafer. This coating apparatus comprises a plurality of nozzles supplied with various resist from a resist source and each adapted to drip the different solution onto the wafer, a vessel in which the nozzles is kept on stand-by, while maintaining the liquids in a predetermined state in the vicinity of discharge port portions of the nozzles, when the nozzles need not be operated, and a nozzle operating mechanism for selecting one of the nozzles kept on stand-by in the vessel, and transporting the selected nozzle to the location of the wafer, whereby the resist is applied to the wafer by means of only the nozzle transported by the nozzle operating mechanism.
摘要翻译：公开了一种将抗蚀剂或显影液施加到半导体晶片的涂布装置。该涂布装置包括从抗蚀剂源供给各种抗蚀剂的多个喷嘴，每个喷嘴适于将不同的溶液滴到晶片上，其中喷嘴保持待机的容器，同时将液体保持在预定状态喷嘴的排出口部分附近，当喷嘴不需要操作时，以及喷嘴操作机构，用于选择在容器中保持待机的喷嘴之一，并将所选择的喷嘴输送到晶片的位置，由此通过仅由喷嘴操作机构传送的喷嘴将抗蚀剂施加到晶片。

4. 发明授权

US06368776B1 Treatment apparatus and treatment method 有权
标题翻译：治疗仪器及治疗方法
公开(公告)号：US06368776B1
公开(公告)日：2002-04-09
申请号：US09270806
申请日：1999-03-17
申请人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
发明人： Koji Harada , Junichi Nagata , Yasunori Kawakami , Masatoshi Kaneda , Norio Semba , Yoshio Kimura , Masami Akimoto , Yasuhiro Sakamoto , Nobuyuki Jinnai
IPC分类号： G03C500
CPC分类号： H01L21/67253 , H01L21/67109 , H01L21/6715 , H01L21/67248
摘要： A gas supplied from a gas source is exposed to an atmosphere above a liquid surface in a tank saving the liquid and thereafter is supplied around a wafer in a treatment chamber through a gas supply passage and a supply port. The gas supplied around the wafer uniformly flows from around the wafer toward above the center of the wafer and thereafter is discharged from an exhaust port which is formed at the top of the treatment chamber. Meanwhile, with respect to the wafer, heat treatment is performed by a heating mechanism and a predetermined PEB is carried out. The humidified gas is supplied into the treatment chamber, thereby preventing drying in the treatment chamber. Therefore, water in resist is not taken out, resulting in that a required resist pattern can be formed on the wafer.
摘要翻译：从气源供给的气体暴露在储存液体的槽内的液面以上的气氛中，然后通过气体供给通路和供给口在处理室内的晶片供给。在晶片周围供给的气体均匀地从晶片周围朝向晶片的中心方向流动，之后从形成在处理室顶部的排气口排出。同时，相对于晶片，通过加热机构进行热处理，进行规定的PEB。将加湿气体供给到处理室，防止处理室内的干燥。因此，抗蚀剂中的水不会被取出，导致可以在晶片上形成所需的抗蚀剂图案。

5. 发明申请

US20060165409A1 Coating and developing system and coating and developing method 有权
标题翻译：涂层开发系统及涂层开发方法
公开(公告)号：US20060165409A1
公开(公告)日：2006-07-27
申请号：US11335635
申请日：2006-01-20
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： G03D5/00
CPC分类号： H01L21/67184 , H01L21/00 , H01L21/6715 , H01L21/67178 , H01L21/6719
摘要： A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.
摘要翻译：涂覆显影系统包括：抗蚀剂膜形成单元块和层叠的抗反射膜形成单元块，以形成抗蚀剂膜和抗反射膜下面的抗反射膜以及在小空间中覆盖抗蚀剂膜的抗反射膜。涂层显影系统能够应对形成防反射膜的情况和没有形成任何抗反射膜的情况，并且需要简单的软件。成膜单位块，即TCT层B 3，COT层B 4和BCT层B 5以及显影单元块，即DEV层B 1和B 2，层叠在处理块S 在形成防反射膜的情况下选择性地使用TCT层B 3，COT层B 4和BCT层B 5以及未形成任何抗反射膜的情况。涂层和显影系统由简单的携带程序和简单的软件控制。

6. 发明申请

US20100326353A1 COATING AND DEVELOPING APPARATUS 审中-公开
公开(公告)号：US20100326353A1
公开(公告)日：2010-12-30
申请号：US12855524
申请日：2010-08-12
申请人： Masami AKIMOTO , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami AKIMOTO , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： B05C9/12
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178 , H01L21/67207 , H01L21/67745
摘要： Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks. Unit blocks for application which a wafer goes through are determined depending on the layering positional relationship between an antireflective film and a resist film. An exposed wafer goes only through the unit block for development without going through any one of the unit blocks for application.

7. 发明授权

US07797855B2 Heating apparatus, and coating and developing apparatus 有权
标题翻译：加热装置和涂装显影装置
公开(公告)号：US07797855B2
公开(公告)日：2010-09-21
申请号：US11505810
申请日：2006-08-18
申请人： Tetsuo Fukuoka , Masami Akimoto , Takahiro Kitano , Yoshio Kimura , Shinichi Hayashi , Hikaru Ito
发明人： Tetsuo Fukuoka , Masami Akimoto , Takahiro Kitano , Yoshio Kimura , Shinichi Hayashi , Hikaru Ito
IPC分类号： F26B21/06
CPC分类号： C30B33/02 , C30B35/00 , H01L21/67098 , H01L21/67748
摘要： A heating apparatus 2 comprises a housing 20; a flat heating chamber 4 which is provided in the housing 2 and adapted to heat a wafer W used as a substrate, with one side of the heating chamber 4 opening for carrying in and carrying out the wafer; and a heating plates 44, 45 provided in the heating chamber 4 such that the wafer W can be heated from both above and below. A cooling plate 3 is provided in the housing 20 located in the vicinity of the opening of the heating chamber 4, for cooling the wafer W after being heated by the heating plates 44, 45. Additionally, a carrying means is provided in the housing 20 for carrying the wafer W between an upper position of the cooling plate 3 and the interior of the heating chamber 4 such that a heat treatment for the wafer W can be performed with the wafer W being held in the heating chamber 4.
摘要翻译：加热装置2包括壳体20; 平面加热室4，其设置在壳体2中并且适于加热用作基板的晶片W，加热室4的一侧开口用于承载和执行晶片; 以及设置在加热室4中的加热板44,45，使得晶片W能够从上下两者加热。冷却板3设置在位于加热室4的开口附近的壳体20中，用于在被加热板44,45加热之后冷却晶片W.此外，在壳体20中设置有承载装置用于在冷却板3的上部位置和加热室4的内部之间承载晶片W，使得可以在将晶片W保持在加热室4中的情况下进行晶片W的热处理。

8. 发明授权

US07793609B2 Coating and developing apparatus 有权
标题翻译：涂装显影装置
公开(公告)号：US07793609B2
公开(公告)日：2010-09-14
申请号：US11342616
申请日：2006-01-31
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： B05C5/02
CPC分类号： H01L21/67184 , H01L21/67173 , H01L21/67178 , H01L21/67207 , H01L21/67745
摘要： Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks. Unit blocks for application which a wafer goes through are determined depending on the layering positional relationship between an antireflective film and a resist film. An exposed wafer goes only through the unit block for development without going through any one of the unit blocks for application.
摘要翻译：提供一种由多个单元块组成的涂层显影装置。第一单位块堆叠和第二单位块堆叠被布置在相对于前后方向的不同位置。用于显影的单元块，每个包括多个处理单元，包括执行曝光之后的显影处理的显影单元和在处理单元之间传送基板的转印装置布置在最下层。用于应用或涂布的单元块包括多个处理单元，其包括在曝光之前进行施加处理的涂布单元和在处理单元之间传送基板的转印装置，布置在用于显影的单位块上方。用于应用的单元块被布置在第一和第二单元块堆叠中。根据防反射膜和抗蚀剂膜之间的层叠位置关系确定晶片通过的应用单元块。暴露的晶片仅通过单元块进行开发，而不经过用于应用的单元块中的任何一个。

9. 发明授权

US07281869B2 Coating and developing system and coating and developing method 有权
标题翻译：涂层开发系统及涂层开发方法
公开(公告)号：US07281869B2
公开(公告)日：2007-10-16
申请号：US11335635
申请日：2006-01-20
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： G03B5/00
CPC分类号： H01L21/67184 , H01L21/00 , H01L21/6715 , H01L21/67178 , H01L21/6719
摘要： A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system can cope with a case where antireflection films are formed and a case where any antireflection film is not formed. Film forming unit blocks, namely, a TCT layer, a COT layer and a BCT layer, and developing unit blocks, namely, DEV layers, are stacked up in layers in a processing block. The TCT layer, the COT layer and the BCT layer are used selectively in the case where antireflection films are formed and where no antireflection film is formed. The coating and developing system is controlled by a simple carrying program.
摘要翻译：涂覆显影系统包括：抗蚀剂膜形成单元块和层叠的抗反射膜形成单元块，以形成抗蚀剂膜和抗反射膜下面的抗反射膜以及在小空间中覆盖抗蚀剂膜的抗反射膜。涂覆和显影系统可以应对形成防反射膜的情况以及没有形成任何抗反射膜的情况。成膜单位块，即TCT层，COT层和BCT层，以及显影单元块，即DEV层，在处理块中层叠。在形成防反射膜并且不形成抗反射膜的情况下，TCT层，COT层和BCT层被选择性地使用。涂层和显影系统由简单的携带程序控制。

10. 发明申请

US20060164613A1 Coating and developing system and coating and developing method 有权
公开(公告)号：US20060164613A1
公开(公告)日：2006-07-27
申请号：US11117566
申请日：2005-04-29
申请人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
发明人： Masami Akimoto , Shinichi Hayashi , Yasushi Hayashida , Nobuaki Matsuoka , Yoshio Kimura , Issei Ueda , Hikaru Ito
IPC分类号： G03B27/32
CPC分类号： H01L21/67184 , H01L21/6715 , H01L21/67178 , H01L21/6719
摘要： A coating and developing system includes a resist film forming unit block and antireflection film forming unit blocks stacked up in layers to form a resist film and an antireflection film underlying the resist film and an antireflection film overlying the resist film in a small space. The coating and developing system is capable of coping with either of a case where antireflection films are formed and a case where any antireflection film is not formed and needs simple software. Film forming unit blocks, namely, a TCT layer B3, a COT layer B4 and a BCT layer B5, and developing unit blocks, namely, DEV layers B1 and B2, are stacked up in layers in a processing block S2. The TCT layer B3, the COT layer B4 and the BCT layer B5 are used selectively in the case where antireflection films are formed and the case where any antireflection film is not formed. The coating and developing system is controlled by a simple carrying program and simple software.

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