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1. 发明授权

US08691490B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process 有权
标题翻译：锍盐，聚合物，聚合物的制造方法，抗蚀剂组合物和图案化工艺
公开(公告)号：US08691490B2
公开(公告)日：2014-04-08
申请号：US13013506
申请日：2011-01-25
申请人： Masaki Ohashi , Satoshi Watanabe , Youichi Ohsawa , Keiichi Masunaga , Takeshi Kinsho
发明人： Masaki Ohashi , Satoshi Watanabe , Youichi Ohsawa , Keiichi Masunaga , Takeshi Kinsho
IPC分类号： G03F7/004 , C07C69/54 , C07C309/67
CPC分类号： C07C69/54 , C08F220/38 , G03F7/004 , G03F7/20
摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
摘要翻译：公开了由以下通式（1）表示的锍盐。在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者R 2和R 3可以相互结合，与式中的硫原子一起形成环。可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。

2. 发明申请

US20100316955A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：化学放大正电子成像组合物和图案形成过程
公开(公告)号：US20100316955A1
公开(公告)日：2010-12-16
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

3. 发明授权

US08361693B2 Chemically amplified positive photoresist composition and pattern forming process 有权
标题翻译：化学扩增正光致抗蚀剂组合物和图案形成工艺
公开(公告)号：US08361693B2
公开(公告)日：2013-01-29
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

4. 发明授权

US08859181B2 Chemically amplified negative resist composition and patterning process 有权
标题翻译：化学放大负光刻胶组合物和图案化工艺
公开(公告)号：US08859181B2
公开(公告)日：2014-10-14
申请号：US13033647
申请日：2011-02-24
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/033 , G03F7/26 , G03F7/038 , G03F1/00
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下使碱不溶。作为基础聚合物，含有在侧链上具有氟化羧酸鎓盐的聚合物。通过光刻工艺处理负光刻胶组合物可以形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和降低的底物中毒。

5. 发明授权

US08632939B2 Polymer, chemically amplified positive resist composition and pattern forming process 有权
标题翻译：聚合物，化学放大阳性抗蚀剂组合物和图案形成过程
公开(公告)号：US08632939B2
公开(公告)日：2014-01-21
申请号：US13035066
申请日：2011-02-25
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/30 , C08F220/22 , G03F7/039
CPC分类号： G03F7/0045 , C08F20/22 , C08F212/14 , C08F220/18 , G03F7/0046 , G03F7/039 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123 , C08F2220/283 , C08F232/08 , C08F2220/382
摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
摘要翻译：使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

6. 发明申请

US20110212390A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学放大抗负荷组合物和模式过程
公开(公告)号：US20110212390A1
公开(公告)日：2011-09-01
申请号：US13033647
申请日：2011-02-24
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F1/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下使碱不溶。作为基础聚合物，含有在侧链上具有氟化羧酸鎓盐的聚合物。通过光刻工艺处理负光刻胶组合物可以形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和降低的底物中毒。

7. 发明申请

US20110212391A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：聚合物，化学阳离子表面活性剂和形成过程
公开(公告)号：US20110212391A1
公开(公告)日：2011-09-01
申请号：US13035066
申请日：2011-02-25
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/20 , G03F7/004 , G03F1/00 , C08F20/38 , C08F20/22
CPC分类号： G03F7/0045 , C08F20/22 , C08F212/14 , C08F220/18 , G03F7/0046 , G03F7/039 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123 , C08F2220/283 , C08F232/08 , C08F2220/382
摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
摘要翻译：使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

8. 发明授权

US08815491B2 Chemically amplified negative resist composition and patterning process 有权
标题翻译：化学放大负光刻胶组合物和图案化工艺
公开(公告)号：US08815491B2
公开(公告)日：2014-08-26
申请号：US13407325
申请日：2012-02-28
申请人： Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/027
CPC分类号： G03F7/0388 , C08F220/24 , G03F1/54 , G03F1/76 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/20 , G03F7/2041
摘要： A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.
摘要翻译：使用包含0.5-10摩尔％具有产酸能力的重复单元和50-99.5摩尔％的在碱性显影剂中溶解的重复单元的聚合物来配制化学放大的负性抗蚀剂组合物。当用于光刻工艺时，组合物显示出高分辨率，并形成具有最小LER和底切的轮廓的负抗蚀剂图案。

9. 发明授权

US08597868B2 Negative resist composition and patterning process 有权
标题翻译：负阻抗组成和图案化工艺
公开(公告)号：US08597868B2
公开(公告)日：2013-12-03
申请号：US12980447
申请日：2010-12-29
申请人： Daisuke Domon , Keiichi Masunaga , Akinobu Tanaka , Satoshi Watanabe
发明人： Daisuke Domon , Keiichi Masunaga , Akinobu Tanaka , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0382 , G03F7/0045
摘要： A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed.
摘要翻译：负性抗蚀剂组合物包含含有具有烷硫基并且Mw为1000-2500的重复单元的基础聚合物，酸产生剂和碱性组分，通常为含有羧基而不是活性氢的胺化合物。可以形成具有低值LER的45nm线间距图案。

10. 发明授权

US08470512B2 Polymer, chemically amplified negative resist composition, and patterning process 有权
标题翻译：聚合物，化学放大的负光刻胶组合物和图案化工艺
公开(公告)号：US08470512B2
公开(公告)日：2013-06-25
申请号：US13192297
申请日：2011-07-27
申请人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka
发明人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka
IPC分类号： G03F7/038 , G03F7/32 , C08F26/06
CPC分类号： G03F7/0382 , C07D239/10 , C08F12/22 , C08F12/24 , C08F12/26 , C08F212/14 , C08F212/32 , C08F220/30 , C08F220/36 , C09D125/18 , G03F1/50 , G03F7/0045 , C08F212/12
摘要： A polymer is provided comprising recurring units having a N,N′-bis(alkoxymethyl)tetrahydropyrimidinone or N,N′-bis(hydroxymethyl)tetrahydropyrimidinone structure on a side chain. When a chemically amplified negative resist composition is formulated using the polymer and processed by lithography, a fine resist pattern can be formed with the advantages of improved LER and high resolution.
摘要翻译：提供了一种聚合物，其包含在侧链上具有N，N'-双（烷氧基甲基）四氢嘧啶酮或N，N'-双（羟甲基）四氢嘧啶酮结构的重复单元。当使用聚合物配制化学放大的负性抗蚀剂组合物并通过光刻处理时，可以形成具有改进的LER和高分辨率的优点的精细抗蚀剂图案。

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