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1. 发明授权

US08859181B2 Chemically amplified negative resist composition and patterning process 有权
标题翻译：化学放大负光刻胶组合物和图案化工艺
公开(公告)号：US08859181B2
公开(公告)日：2014-10-14
申请号：US13033647
申请日：2011-02-24
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/033 , G03F7/26 , G03F7/038 , G03F1/00
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下使碱不溶。作为基础聚合物，含有在侧链上具有氟化羧酸鎓盐的聚合物。通过光刻工艺处理负光刻胶组合物可以形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和降低的底物中毒。

2. 发明授权

US08632939B2 Polymer, chemically amplified positive resist composition and pattern forming process 有权
标题翻译：聚合物，化学放大阳性抗蚀剂组合物和图案形成过程
公开(公告)号：US08632939B2
公开(公告)日：2014-01-21
申请号：US13035066
申请日：2011-02-25
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/30 , C08F220/22 , G03F7/039
CPC分类号： G03F7/0045 , C08F20/22 , C08F212/14 , C08F220/18 , G03F7/0046 , G03F7/039 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123 , C08F2220/283 , C08F232/08 , C08F2220/382
摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
摘要翻译：使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

3. 发明申请

US20110212390A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学放大抗负荷组合物和模式过程
公开(公告)号：US20110212390A1
公开(公告)日：2011-09-01
申请号：US13033647
申请日：2011-02-24
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F1/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下使碱不溶。作为基础聚合物，含有在侧链上具有氟化羧酸鎓盐的聚合物。通过光刻工艺处理负光刻胶组合物可以形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和降低的底物中毒。

4. 发明申请

US20110212391A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：聚合物，化学阳离子表面活性剂和形成过程
公开(公告)号：US20110212391A1
公开(公告)日：2011-09-01
申请号：US13035066
申请日：2011-02-25
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/20 , G03F7/004 , G03F1/00 , C08F20/38 , C08F20/22
CPC分类号： G03F7/0045 , C08F20/22 , C08F212/14 , C08F220/18 , G03F7/0046 , G03F7/039 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123 , C08F2220/283 , C08F232/08 , C08F2220/382
摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
摘要翻译：使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

5. 发明申请

US20100316955A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：化学放大正电子成像组合物和图案形成过程
公开(公告)号：US20100316955A1
公开(公告)日：2010-12-16
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

6. 发明授权

US08361693B2 Chemically amplified positive photoresist composition and pattern forming process 有权
标题翻译：化学扩增正光致抗蚀剂组合物和图案形成工艺
公开(公告)号：US08361693B2
公开(公告)日：2013-01-29
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

7. 发明授权

US08691490B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process 有权
标题翻译：锍盐，聚合物，聚合物的制造方法，抗蚀剂组合物和图案化工艺
公开(公告)号：US08691490B2
公开(公告)日：2014-04-08
申请号：US13013506
申请日：2011-01-25
申请人： Masaki Ohashi , Satoshi Watanabe , Youichi Ohsawa , Keiichi Masunaga , Takeshi Kinsho
发明人： Masaki Ohashi , Satoshi Watanabe , Youichi Ohsawa , Keiichi Masunaga , Takeshi Kinsho
IPC分类号： G03F7/004 , C07C69/54 , C07C309/67
CPC分类号： C07C69/54 , C08F220/38 , G03F7/004 , G03F7/20
摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
摘要翻译：公开了由以下通式（1）表示的锍盐。在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者R 2和R 3可以相互结合，与式中的硫原子一起形成环。可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。

8. 发明授权

US08741554B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US08741554B2
公开(公告)日：2014-06-03
申请号：US12787823
申请日：2010-05-26
申请人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
发明人： Jun Hatakeyama , Kazuhiro Katayama , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/38 , G03F7/40 , G03F7/20
CPC分类号： G03F7/70466 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/38 , G03F7/40 , Y10S430/108 , Y10S430/111
摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
摘要翻译：通过将包含基础树脂，光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂图案，形成图案，加热第一抗蚀剂图案，用于使基底发生器产生用于使图案失去酸的碱，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

9. 发明授权

US08057985B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权
标题翻译：可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08057985B2
公开(公告)日：2011-11-15
申请号：US12549191
申请日：2009-08-27
申请人： Masaki Ohashi , Takeshi Kinsho , Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana
发明人： Masaki Ohashi , Takeshi Kinsho , Youichi Ohsawa , Jun Hatakeyama , Seiichiro Tachibana
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F28/02 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C07D493/08 , C07D493/18 , C08F20/22 , C08F20/36 , C08F20/38 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/124 , Y10S430/126 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C1-C20 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译：提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是C1-C20有机基团，n是0或1.锍盐在暴露于高能量辐射时产生非常强的磺酸。还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。

10. 发明授权

US08039198B2 Sulfonium salt-containing polymer, resist composition, and patterning process 有权
标题翻译：含锍盐的聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08039198B2
公开(公告)日：2011-10-18
申请号：US12404245
申请日：2009-03-13
申请人： Seiichiro Tachibana , Jun Hatakeyama , Youichi Ohsawa , Masaki Ohashi
发明人： Seiichiro Tachibana , Jun Hatakeyama , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/111
摘要： A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, methyl or trifluoromethyl, R2 to R4 are C1-C10 alkyl or alkoxy, R5 is C1-C30 alkyl or C6-C14 aryl, k, m and n are 0 to 3. The recurring units generate a sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. The resist composition exhibits excellent resolution and a pattern finish with minimal LER.
摘要翻译：提供了包含由式（1）表示的锍盐的重复单元的聚合物以及包含该聚合物的化学放大抗蚀剂组合物。 R 1是H，F，甲基或三氟甲基，R 2至R 4是C 1 -C 10烷基或烷氧基，R 5是C 1 -C 30烷基或C 6 -C 14芳基，k，m和n是0至3.重复单元产生磺酸暴露于高能量辐射下，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。抗蚀剂组合物以最小的LER显示出优异的分辨率和图案光洁度。

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