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1. 发明申请

US20100316955A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：化学放大正电子成像组合物和图案形成过程
公开(公告)号：US20100316955A1
公开(公告)日：2010-12-16
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

2. 发明授权

US08361693B2 Chemically amplified positive photoresist composition and pattern forming process 有权
标题翻译：化学扩增正光致抗蚀剂组合物和图案形成工艺
公开(公告)号：US08361693B2
公开(公告)日：2013-01-29
申请号：US12815787
申请日：2010-06-15
申请人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
发明人： Keiichi Masunaga , Akinobu Tanaka , Daisuke Domon , Satoshi Watanabe , Youichi Ohsawa , Masaki Ohashi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/0392 , G03F7/0045
摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
摘要翻译：使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

3. 发明授权

US08859181B2 Chemically amplified negative resist composition and patterning process 有权
标题翻译：化学放大负光刻胶组合物和图案化工艺
公开(公告)号：US08859181B2
公开(公告)日：2014-10-14
申请号：US13033647
申请日：2011-02-24
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/033 , G03F7/26 , G03F7/038 , G03F1/00
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下使碱不溶。作为基础聚合物，含有在侧链上具有氟化羧酸鎓盐的聚合物。通过光刻工艺处理负光刻胶组合物可以形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和降低的底物中毒。

4. 发明授权

US08632939B2 Polymer, chemically amplified positive resist composition and pattern forming process 有权
标题翻译：聚合物，化学放大阳性抗蚀剂组合物和图案形成过程
公开(公告)号：US08632939B2
公开(公告)日：2014-01-21
申请号：US13035066
申请日：2011-02-25
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/004 , G03F7/30 , C08F220/22 , G03F7/039
CPC分类号： G03F7/0045 , C08F20/22 , C08F212/14 , C08F220/18 , G03F7/0046 , G03F7/039 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123 , C08F2220/283 , C08F232/08 , C08F2220/382
摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
摘要翻译：使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

5. 发明申请

US20110212390A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：化学放大抗负荷组合物和模式过程
公开(公告)号：US20110212390A1
公开(公告)日：2011-09-01
申请号：US13033647
申请日：2011-02-24
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F1/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F1/14 , G03F7/0045 , G03F7/0046 , Y10S430/11 , Y10S430/111
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性基础聚合物，（B）酸产生剂和（C）含氮化合物，所述碱性聚合物（A）在酸催化下使碱不溶。作为基础聚合物，含有在侧链上具有氟化羧酸鎓盐的聚合物。通过光刻工艺处理负光刻胶组合物可以形成抗蚀剂图案，其优点包括酸的均匀低扩散，改进的LER和降低的底物中毒。

6. 发明申请

US20110212391A1 POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：聚合物，化学阳离子表面活性剂和形成过程
公开(公告)号：US20110212391A1
公开(公告)日：2011-09-01
申请号：US13035066
申请日：2011-02-25
申请人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Jun Hatakeyama , Youichi Ohsawa , Daisuke Domon
IPC分类号： G03F7/20 , G03F7/004 , G03F1/00 , C08F20/38 , C08F20/22
CPC分类号： G03F7/0045 , C08F20/22 , C08F212/14 , C08F220/18 , G03F7/0046 , G03F7/039 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123 , C08F2220/283 , C08F232/08 , C08F2220/382
摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
摘要翻译：使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

7. 发明授权

US08597868B2 Negative resist composition and patterning process 有权
标题翻译：负阻抗组成和图案化工艺
公开(公告)号：US08597868B2
公开(公告)日：2013-12-03
申请号：US12980447
申请日：2010-12-29
申请人： Daisuke Domon , Keiichi Masunaga , Akinobu Tanaka , Satoshi Watanabe
发明人： Daisuke Domon , Keiichi Masunaga , Akinobu Tanaka , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0382 , G03F7/0045
摘要： A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed.
摘要翻译：负性抗蚀剂组合物包含含有具有烷硫基并且Mw为1000-2500的重复单元的基础聚合物，酸产生剂和碱性组分，通常为含有羧基而不是活性氢的胺化合物。可以形成具有低值LER的45nm线间距图案。

8. 发明授权

US08470511B2 Chemically amplified negative resist composition for EB or EUV lithography and patterning process 有权
标题翻译：用于EB或EUV光刻和图案化工艺的化学放大负光刻胶组合物
公开(公告)号：US08470511B2
公开(公告)日：2013-06-25
申请号：US13027446
申请日：2011-02-15
申请人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
发明人： Keiichi Masunaga , Satoshi Watanabe , Akinobu Tanaka , Daisuke Domon
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , G03F7/038
摘要： A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
摘要翻译：提供一种化学放大型负性抗蚀剂组合物，其包含（A）碱溶性聚合物，（B）酸产生剂和（C）含氮化合物作为碱性成分，所述聚合物（A）在催化下使碱不溶的酸。在侧链上具有仲胺结构或叔胺结构的基本聚合物用作组分（A）和（C）。通过EB或EUV光刻工艺处理负光刻胶组合物可形成精细尺寸的抗蚀剂图案，其优点包括碱的均匀扩散，改进的LER，在底物界面处控制的酸的失活，以及降低的底切度。

9. 发明申请

US20110143266A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
标题翻译：负极组合物和图案过程
公开(公告)号：US20110143266A1
公开(公告)日：2011-06-16
申请号：US12911338
申请日：2010-10-25
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F1/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , G03F1/08 , G03F7/0045 , G03F7/0382 , G03F7/20 , Y10S430/111
摘要： There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same.
摘要翻译：公开了一种负性抗蚀剂组合物，其至少包含：（A）碱溶性碱性聚合物，并且通过酸的作用使其不溶于碱; （B）酸发生剂; 和（C）碱性成分，其中，所述基础聚合物至少含有包含由以下通式（1）和通式（2）表示的重均分子量为1,000〜10,000的聚合物。可以存在在形成图案时难以引起桥的负的抗蚀剂组合物，并且提供高分辨率和使用其的图案化工艺。

10. 发明授权

US08557509B2 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition 有权
标题翻译：负性抗蚀剂组成，图案化工艺，负极抗蚀剂组成的测试工艺及制备工艺
公开(公告)号：US08557509B2
公开(公告)日：2013-10-15
申请号：US12662435
申请日：2010-04-16
申请人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
发明人： Akinobu Tanaka , Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
IPC分类号： G03F7/004 , G03F7/028 , G03F7/26
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/30 , G03F7/322
摘要： There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X−1.0 (nm/second) or more and 0.0667X−1.6 (nm/second) or less. There can be a negative resist composition having excellent etching resistance and resolution and giving a good pattern profile even at the substrate's interface, a patterning process using the same, and a testing process and a preparation process of this negative resist composition.
摘要翻译：公开了一种负性抗蚀剂组合物，其至少包含（A）碱溶性碱性树脂，并且通过酸的作用而成为碱不溶性，和/或碱溶性碱性树脂的组合通过与交联剂的反应，通过与交联剂的反应，（B）酸产生剂和（C）含有氮作为碱性成分的化合物，并且形成具有膜厚度X（ nm）为50〜100nm，其中，在用于图案形成的成膜条件下，由抗蚀剂组合物形成抗蚀剂膜的情况下，抗蚀剂膜在显影剂中使用的碱性显影剂的溶解速度图案形成的处理为0.0333X-1.0（nm /秒）以上且0.0667X-1.6（nm /秒）以下。可以存在耐蚀性和分辨率优异的负光刻胶组合物，即使在基板的界面也能得到良好的图案图案，使用该抗蚀剂组合物的图案化工艺，以及该负型抗蚀剂组合物的测试方法和制备方法。

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