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1. 发明授权

US5650790A Antenna device for radio transmission-reception apparatus 失效
标题翻译：无线发送接收装置用天线装置
公开(公告)号：US5650790A
公开(公告)日：1997-07-22
申请号：US566564
申请日：1995-11-28
申请人： Masahisa Fukuchi , Hideo Hikuma , Hiroki Ohno , Makoto Ehara
发明人： Masahisa Fukuchi , Hideo Hikuma , Hiroki Ohno , Makoto Ehara
IPC分类号： H01Q1/22 , H01Q1/24 , H01Q1/42 , H04B7/26
CPC分类号： H01Q1/42 , H01Q1/242
摘要： An antenna device for a radio transmission-reception apparatus is disclosed which comprises an antenna element which is to be electrically and mechanically connected to a printed-circuit board fixed in a housing of the radio transmission-reception apparatus, an inverted U-shaped hollow reinforcement spacer, an antenna cover and a retaining portion formed on the housing. The reinforcement spacer has a hole formed in the top portion thereof a diameter of which is substantially equal to that of the antenna element to slide therethrough, a slit formed continuously from the hole to a base end thereof through which said antenna element can be entered in the reinforcement spacer, and a flange formed around the outer circumference of the base end. The antenna cover is constituted to accommodate therein the antenna element with the reinforcement spacer, and has a flange formed around the circumference of a base end thereof. The flanges of the antenna cover and the reinforcement spacer are fixedly supported in the retaining portion provided on the housing in a state that said flanges are stacked upon each other. Since the most of forces caused by vibration and/or impact supplied to the antenna element are absorbed by the reinforcement spacer, a mechanically and electrically connected portion between the antenna element and the printed-circuit board will be effected by the forces and thus damage to the portion will be eliminated.
摘要翻译：公开了一种用于无线电发射 - 接收装置的天线装置，其包括：电气和机械地连接到固定在无线电发射接收装置的壳体中的印刷电路板的天线元件，倒置的U形中空加强件间隔件，天线盖和形成在壳体上的保持部分。加强隔离物在其顶部形成有孔，其直径基本上等于天线元件滑动的直径，该孔从孔到其基端连续地形成，所述天线元件可以通过该狭缝进入其中加强间隔件，以及围绕基端的外周形成的凸缘。天线罩被构造成在其中容纳天线元件和加强间隔件，并且具有围绕其基端的圆周形成的凸缘。天线罩和加强间隔件的凸缘以所述法兰彼此堆叠的状态固定地支撑在设置在壳体上的保持部分中。由于由提供给天线元件的振动和/或冲击引起的大部分力被加强间隔件吸收，所以天线元件和印刷电路板之间的机械和电连接部分将受到力的影响，从而损坏该部分将被淘汰。

2. 发明授权

US5732355A Telephone system 失效
标题翻译：电话系统
公开(公告)号：US5732355A
公开(公告)日：1998-03-24
申请号：US480770
申请日：1995-06-07
申请人： Ronald Lee Lipp , Susumi Ohashi , Atsushi Kaneda , Zhao Min , Hiroki Ohno , Kazuhiko Shimizu , Takahiro Kudo , Takashi Odagiri , Makoto Ehara
发明人： Ronald Lee Lipp , Susumi Ohashi , Atsushi Kaneda , Zhao Min , Hiroki Ohno , Kazuhiko Shimizu , Takahiro Kudo , Takashi Odagiri , Makoto Ehara
IPC分类号： H04M1/00 , H04M1/654 , H04M1/725 , H04Q7/38 , H04Q7/26
CPC分类号： H04M1/725 , H04M1/6545 , H04M1/72502
摘要： The is provided by the present invention a telephone system with high versatility comprising a corded telephone set, a cordless telephone set, and a relay lifter, wherein said relay lifter comprises a hook switch unit for turning ON/OFF a hook switch of the corded telephone set according to a first control signal responding to the talk switch, and a voice switching unit for switching connection of an aural signal in the corded telephone set according to a second control signal between a transmitter/receiver of the corded telephone set and the cordless telephone set, and switches connection of an aural signal in the corded telephone set to the cordless telephone set using the voice switching unit to transmit or receive voice using the cordless telephone set.
摘要翻译：本发明提供了一种具有高通用性的电话系统，包括有线电话机，无绳电话机和继电器升降器，其中所述继电器升降器包括用于打开/关闭有线电话的挂钩开关的挂钩开关单元根据响应于通话开关的第一控制信号设置的语音切换单元，用于根据第二控制信号在有线电话机的发送器/接收器与无绳电话机之间切换有线电话机中的听觉信号的连接的语音切换单元使用语音切换单元将有线电话机中的听觉信号的连接切换到无绳电话机，以使用无绳电话机发送或接收语音。

3. 发明授权

US08771429B2 Supercritical drying method for semiconductor substrate and supercritical drying apparatus 有权
标题翻译：半导体衬底超临界干燥方法及超临界干燥装置
公开(公告)号：US08771429B2
公开(公告)日：2014-07-08
申请号：US13420870
申请日：2012-03-15
申请人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B7/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

4. 发明授权

US07806989B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07806989B2
公开(公告)日：2010-10-05
申请号：US11394337
申请日：2006-03-31
申请人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/024 , B08B3/04 , H01L21/6708 , Y10S134/902
摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
摘要翻译：使用诸如去离子水的工艺液体处理衬底（W）。然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

5. 发明申请

US20070175501A1 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US20070175501A1
公开(公告)日：2007-08-02
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

6. 发明授权

US06895979B2 Processing apparatus and processing method 有权
标题翻译：处理装置及处理方法
公开(公告)号：US06895979B2
公开(公告)日：2005-05-24
申请号：US10359208
申请日：2003-02-06
申请人： Kyouji Kohama , Eiji Shimbo , Yuji Kamikawa , Takayuki Toshima , Hiroki Ohno
发明人： Kyouji Kohama , Eiji Shimbo , Yuji Kamikawa , Takayuki Toshima , Hiroki Ohno
IPC分类号： H01L21/304 , B08B3/02 , B08B3/10 , H01L21/00
CPC分类号： H01L21/67086 , B08B3/02 , B08B3/102 , H01L21/67051 , H01L21/67057 , H01L21/6708 , Y10S134/902
摘要： A processing apparatus essentially includes a rotatable rotor 21 for carrying semiconductor wafers W, a motor 22 for driving to rotate the rotor 21, a plurality of processing chambers for surrounding the wafers W carried by the rotor 21, for example, an inner chamber 23 and an outer chamber 24, a chemical supplying unit 50, an IPA supplying unit 60, a rinse supplying unit 70 and a drying fluid supplying unit 80. With this constitution of the apparatus, it is possible to prevent the wafers from being contaminated due to the reaction of treatment liquids of different kinds, with the improvement of processing efficiency and miniaturization of the apparatus.
摘要翻译：一种处理装置主要包括用于承载半导体晶片W的可旋转转子21，用于驱动转子21旋转的电动机22，用于围绕由转子21承载的晶片W的多个处理室，例如内室23和外部室24，化学品供应单元50，IPA供应单元60，漂洗供应单元70和干燥流体供应单元80.通过该设备的这种结构，可以防止晶片被不同种类的处理液的反应，提高了加工效率和设备的小型化。

7. 发明申请

US20050026454A1 Film forming method and film forming apparatus 审中-公开
标题翻译：成膜方法和成膜装置
公开(公告)号：US20050026454A1
公开(公告)日：2005-02-03
申请号：US10927102
申请日：2004-08-27
申请人： Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
发明人： Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
IPC分类号： H01L21/20 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76837 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.
摘要翻译：本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性具有所谓的“锚效应”。

8. 发明授权

US08056257B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08056257B2
公开(公告)日：2011-11-15
申请号：US11984100
申请日：2007-11-13
申请人： Hiroki Ohno , Kenji Sekiguchi
发明人： Hiroki Ohno , Kenji Sekiguchi
IPC分类号： F26B3/00
CPC分类号： H01L21/02057 , H01L21/02052 , H01L21/67023 , H01L21/67051
摘要： A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.
摘要翻译：基板处理装置包括：室，以及清洗液供给单元，其将含有氢氟醚的清洗液供给到被处理的基板上。在室内还设置有一个气体供给单元，当含有氢氟醚的清洗液体被供给到待处理的基板上时，该气体供给单元将用于防止湿气附着在被处理基板上的气体供给到室内。

9. 发明授权

US07803230B2 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US07803230B2
公开(公告)日：2010-09-28
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

10. 发明申请

US20080127508A1 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20080127508A1
公开(公告)日：2008-06-05
申请号：US11984100
申请日：2007-11-13
申请人： Hiroki Ohno , Kenji Sekiguchi
发明人： Hiroki Ohno , Kenji Sekiguchi
IPC分类号： F26B19/00 , F26B21/10 , F26B25/08
CPC分类号： H01L21/02057 , H01L21/02052 , H01L21/67023 , H01L21/67051
摘要： A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.
摘要翻译：基板处理装置包括：室，以及清洗液供给单元，其将含有氢氟醚的清洗液供给到被处理的基板上。在室内还设置有一个气体供给单元，当含有氢氟醚的清洗液体被供给到待处理的基板上时，该气体供给单元将用于防止湿气附着在被处理基板上的气体供给到室内。

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