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1. 发明授权

US07803230B2 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US07803230B2
公开(公告)日：2010-09-28
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

2. 发明申请

US20070175501A1 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US20070175501A1
公开(公告)日：2007-08-02
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

3. 发明申请

US20070223342A1 Substrate Processing Method and Substrate Processing Apparatus 有权
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20070223342A1
公开(公告)日：2007-09-27
申请号：US11578099
申请日：2005-10-12
申请人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： C23F1/00 , G11B31/00 , H01L21/306
CPC分类号： F26B5/005 , H01L21/02052 , H01L21/67034 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.
摘要翻译：根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心衬底比流体喷嘴。

4. 发明授权

US08337659B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08337659B2
公开(公告)日：2012-12-25
申请号：US11578099
申请日：2005-10-12
申请人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： F26B5/005 , H01L21/02052 , H01L21/67034 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.
摘要翻译：根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心衬底比流体喷嘴。

5. 发明授权

US07806989B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07806989B2
公开(公告)日：2010-10-05
申请号：US11394337
申请日：2006-03-31
申请人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/024 , B08B3/04 , H01L21/6708 , Y10S134/902
摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
摘要翻译：使用诸如去离子水的工艺液体处理衬底（W）。然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

6. 发明授权

US08137478B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08137478B2
公开(公告)日：2012-03-20
申请号：US12857973
申请日：2010-08-17
申请人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/024 , B08B3/04 , H01L21/6708 , Y10S134/902
摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
摘要翻译：使用诸如去离子水的工艺液体处理衬底（W）。然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

7. 发明申请

US20070017555A1 Substrate Processing method and substrate processing apparatus 有权
标题翻译：基板加工方法和基板处理装置
公开(公告)号：US20070017555A1
公开(公告)日：2007-01-25
申请号：US11394337
申请日：2006-03-31
申请人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： C23G1/00 , B08B3/00 , B08B5/04 , B08B7/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/024 , B08B3/04 , H01L21/6708 , Y10S134/902
摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
摘要翻译：使用诸如去离子水的工艺液体处理衬底（W）。然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

8. 发明授权

US08651121B2 Substrate processing apparatus, substrate processing method, and storage medium 有权
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：US08651121B2
公开(公告)日：2014-02-18
申请号：US12372265
申请日：2009-02-17
申请人： Takehiko Orii , Kenji Sekiguchi
发明人： Takehiko Orii , Kenji Sekiguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , H01L21/67028 , H01L21/67034
摘要： A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.
摘要翻译：一种基板处理装置，包括：配置成用基板保持件配置被处理基板的室，旋转基板的旋转卡盘，将排出除湿气体排出到基板的排气头，处理液供给喷嘴，IPA 供给喷嘴和驱动装置，该驱动装置构造成使所述气体排出头在所述室的上部的后退位置和所述基板附近的接近位置之间移动。特别地，当将IPA提供给基板时，气体放电头位于接近位置，使得当将IPA供给到基板时，将除气从气体排出头供应到基板。

9. 发明授权

US07691210B2 Resist film removing method 失效
标题翻译：抗蚀膜去除方法
公开(公告)号：US07691210B2
公开(公告)日：2010-04-06
申请号：US11543819
申请日：2006-10-06
申请人： Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
发明人： Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
IPC分类号： B08B3/00
CPC分类号： G03F7/42 , G03F7/423
摘要： A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.
摘要翻译：用于除去设置在基板上并且在表面上具有固化层的抗蚀剂膜的抗蚀剂膜去除方法包括用保护膜覆盖抗蚀剂膜的表面; 导致用保护膜覆盖的抗蚀剂膜突然出现; 导致抗蚀剂膜和保护膜变质，引起爆裂，溶于水; 并进行净化水清洗，从基板除去抗蚀剂膜和保护膜变性以溶于水。

10. 发明申请

US20070082496A1 Resist film removing method 失效
标题翻译：抗蚀膜去除方法
公开(公告)号：US20070082496A1
公开(公告)日：2007-04-12
申请号：US11543819
申请日：2006-10-06
申请人： Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
发明人： Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/42 , G03F7/423
摘要： A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.
摘要翻译：用于除去设置在基板上并且在表面上具有固化层的抗蚀剂膜的抗蚀剂膜去除方法包括用保护膜覆盖抗蚀剂膜的表面; 导致用保护膜覆盖的抗蚀剂膜突然出现; 导致抗蚀剂膜和保护膜变质，引起爆裂，溶于水; 并进行净化水清洗，从基板除去抗蚀剂膜和保护膜变性以溶于水。

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