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1. 发明授权

US07803230B2 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US07803230B2
公开(公告)日：2010-09-28
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

2. 发明申请

US20070175501A1 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US20070175501A1
公开(公告)日：2007-08-02
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

3. 发明申请

US20070223342A1 Substrate Processing Method and Substrate Processing Apparatus 有权
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20070223342A1
公开(公告)日：2007-09-27
申请号：US11578099
申请日：2005-10-12
申请人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： C23F1/00 , G11B31/00 , H01L21/306
CPC分类号： F26B5/005 , H01L21/02052 , H01L21/67034 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.
摘要翻译：根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心衬底比流体喷嘴。

4. 发明授权

US08337659B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08337659B2
公开(公告)日：2012-12-25
申请号：US11578099
申请日：2005-10-12
申请人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： F26B5/005 , H01L21/02052 , H01L21/67034 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.
摘要翻译：根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心衬底比流体喷嘴。

5. 发明授权

US07416632B2 Substrate processing apparatus and substrate processing method 有权
公开(公告)号：US07416632B2
公开(公告)日：2008-08-26
申请号：US10488406
申请日：2002-08-28
申请人： Takehiko Orii , Masaru Amai
发明人： Takehiko Orii , Masaru Amai
IPC分类号： C23F1/00
CPC分类号： H01L21/67248 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate.A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.

6. 发明授权

US07329616B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07329616B2
公开(公告)日：2008-02-12
申请号：US11327310
申请日：2006-01-09
申请人： Takehiko Orii , Masaru Amai
发明人： Takehiko Orii , Masaru Amai
IPC分类号： H01L21/00
CPC分类号： H01L21/67248 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate.A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.
摘要翻译：提供了一种基板处理装置和基板处理方法，其中当在基板的前侧表面上形成氧化膜时，可以以均匀的厚度形成比常规膜更薄的氧化物膜。一种用于通过输送处理液来处理衬底（W）的衬底处理设备（12）包括：温度调节器（133），用于调节所述处理液体的温度; 和底板温度调节器（115），以调节放置在所述衬底W的背面表面附近的底板（77）的温度。

7. 发明申请

US20060160368A1 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20060160368A1
公开(公告)日：2006-07-20
申请号：US11327310
申请日：2006-01-09
申请人： Takehiko Orii , Masaru Amai
发明人： Takehiko Orii , Masaru Amai
IPC分类号： H01L21/461
CPC分类号： H01L21/67248 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.
摘要翻译：提供了一种基板处理装置和基板处理方法，其中当在基板的前侧表面上形成氧化膜时，可以以均匀的厚度形成比常规膜更薄的氧化物膜。一种用于通过输送处理液来处理衬底（W）的衬底处理设备（12）包括：温度调节器（133），用于调节所述处理液体的温度; 和底板温度调节器（115），以调节放置在所述衬底W的背面表面附近的底板（77）的温度。

8. 发明授权

US08771429B2 Supercritical drying method for semiconductor substrate and supercritical drying apparatus 有权
标题翻译：半导体衬底超临界干燥方法及超临界干燥装置
公开(公告)号：US08771429B2
公开(公告)日：2014-07-08
申请号：US13420870
申请日：2012-03-15
申请人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B7/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

9. 发明申请

US20140250714A1 SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE AND SUPERCRITICAL DRYING APPARATUS 有权
标题翻译：半导体基板和超临界干燥装置的超临界干燥方法
公开(公告)号：US20140250714A1
公开(公告)日：2014-09-11
申请号：US14283874
申请日：2014-05-21
申请人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazayuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan JI , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazayuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： H01L21/02
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

10. 发明授权

US08747689B2 Liquid processing method, liquid processing apparatus and storage medium 有权
标题翻译：液体处理方法，液体处理装置和储存介质
公开(公告)号：US08747689B2
公开(公告)日：2014-06-10
申请号：US13355709
申请日：2012-01-23
申请人： Hiroki Ohno , Takehiko Orii
发明人： Hiroki Ohno , Takehiko Orii
IPC分类号： B44C1/22
CPC分类号： H01L21/31111 , H01L21/6708
摘要： There are provided a liquid processing method and a liquid processing apparatus capable of providing a high etching rate and a high etching selectivity for silicon nitride against silicon oxide, and a storage medium storing the method thereon. In the method for etching, by an etching solution, a substrate on which silicon nitride and silicon oxide are exposed, the etching solution is produced by mixing a fluorine ion source material, water and a boiling point adjusting agent; the produced etching solution is heated to a substrate processing temperature equal to or higher than 140° C.; after a temperature of the etching solution reaches the substrate processing temperature, the temperature of the etching solution is maintained at the substrate processing temperature for a first preset time; and after a lapse of the first preset time, the substrate is etched by the etching solution maintained at the substrate processing temperature.
摘要翻译：提供了一种液体处理方法和液体处理装置，其能够提供氮化硅相对于氧化硅的高蚀刻速率和高蚀刻选择性，以及在其上存储该方法的存储介质。在蚀刻方法中，通过蚀刻溶液，暴露有氮化硅和氧化硅的衬底，通过混合氟离子源材料，水和沸点调节剂来制备蚀刻溶液; 将生成的蚀刻溶液加热到140℃以上的基板处理温度。在蚀刻溶液的温度达到基板处理温度之后，将蚀刻溶液的温度保持在基板处理温度第一预设时间; 在经过第一预设时间之后，通过保持在衬底处理温度的蚀刻溶液来蚀刻衬底。

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