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1. 发明授权

US07806989B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07806989B2
公开(公告)日：2010-10-05
申请号：US11394337
申请日：2006-03-31
申请人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/024 , B08B3/04 , H01L21/6708 , Y10S134/902
摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
摘要翻译：使用诸如去离子水的工艺液体处理衬底（W）。然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

2. 发明申请

US20070175501A1 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US20070175501A1
公开(公告)日：2007-08-02
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在刷子3的清洁位置Sb从基板W的中心部朝向其周边部移动的过程中，双流体喷嘴的清洁位置Sb位于更靠近中心P 0 < >刷3的清洁位置Sb。由于防止刷子的污染再次粘附到晶片上，所以可以避免晶片W被污染。

3. 发明授权

US08147617B2 Substrate cleaning method and computer readable storage medium 有权
标题翻译：基板清洗方法和计算机可读存储介质
公开(公告)号：US08147617B2
公开(公告)日：2012-04-03
申请号：US11628308
申请日：2005-06-01
申请人： Kenji Sekiguchi , Hiroki Ohno
发明人： Kenji Sekiguchi , Hiroki Ohno
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/02052 , B08B3/02 , B08B2203/0288 , H01L21/67051 , Y10S134/902
摘要： A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.
摘要翻译：在基本上水平状态下旋转晶片W的同时，通过向晶片W上供应双流体高压喷射水或大体积的水来处理晶片W. 在停止供给清洗液之后，通过以比供给清洗液所用的速度高的速度旋转晶片W来干燥晶片W. 在停止供给清洗液之后的时间内，在高速旋转基板之前，不进行使用净化水的漂洗处理。

4. 发明授权

US08137478B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08137478B2
公开(公告)日：2012-03-20
申请号：US12857973
申请日：2010-08-17
申请人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/024 , B08B3/04 , H01L21/6708 , Y10S134/902
摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
摘要翻译：使用诸如去离子水的工艺液体处理衬底（W）。然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。

5. 发明授权

US08197606B2 Substrate cleaning method, substrate cleaning apparatus, control program, and computer-readable storage medium 失效
标题翻译：基板清洗方法，基板清洗装置，控制程序和计算机可读存储介质
公开(公告)号：US08197606B2
公开(公告)日：2012-06-12
申请号：US12707098
申请日：2010-02-17
申请人： Tsukasa Watanabe , Naoki Shindo , Hiroki Ohno , Kenji Sekiguchi
发明人： Tsukasa Watanabe , Naoki Shindo , Hiroki Ohno , Kenji Sekiguchi
IPC分类号： B08B7/02
CPC分类号： H01L21/67051 , B24C7/0046 , H01L21/02057 , Y10S134/902
摘要： Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.
摘要翻译：公开了一种用于防止对在基板上形成的图案的损坏的基板清洗方法。基板清洗方法包括通过将干燥空气或惰性气体中携带的清洁微粒冲击到基板的表面上并清除清洁颗粒来清洁基板。

6. 发明申请

US20070223342A1 Substrate Processing Method and Substrate Processing Apparatus 有权
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20070223342A1
公开(公告)日：2007-09-27
申请号：US11578099
申请日：2005-10-12
申请人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： C23F1/00 , G11B31/00 , H01L21/306
CPC分类号： F26B5/005 , H01L21/02052 , H01L21/67034 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.
摘要翻译：根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心衬底比流体喷嘴。

7. 发明授权

US08056257B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08056257B2
公开(公告)日：2011-11-15
申请号：US11984100
申请日：2007-11-13
申请人： Hiroki Ohno , Kenji Sekiguchi
发明人： Hiroki Ohno , Kenji Sekiguchi
IPC分类号： F26B3/00
CPC分类号： H01L21/02057 , H01L21/02052 , H01L21/67023 , H01L21/67051
摘要： A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.
摘要翻译：基板处理装置包括：室，以及清洗液供给单元，其将含有氢氟醚的清洗液供给到被处理的基板上。在室内还设置有一个气体供给单元，当含有氢氟醚的清洗液体被供给到待处理的基板上时，该气体供给单元将用于防止湿气附着在被处理基板上的气体供给到室内。

8. 发明授权

US07803230B2 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US07803230B2
公开(公告)日：2010-09-28
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

9. 发明申请

US20080127508A1 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20080127508A1
公开(公告)日：2008-06-05
申请号：US11984100
申请日：2007-11-13
申请人： Hiroki Ohno , Kenji Sekiguchi
发明人： Hiroki Ohno , Kenji Sekiguchi
IPC分类号： F26B19/00 , F26B21/10 , F26B25/08
CPC分类号： H01L21/02057 , H01L21/02052 , H01L21/67023 , H01L21/67051
摘要： A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.
摘要翻译：基板处理装置包括：室，以及清洗液供给单元，其将含有氢氟醚的清洗液供给到被处理的基板上。在室内还设置有一个气体供给单元，当含有氢氟醚的清洗液体被供给到待处理的基板上时，该气体供给单元将用于防止湿气附着在被处理基板上的气体供给到室内。

10. 发明授权

US08337659B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08337659B2
公开(公告)日：2012-12-25
申请号：US11578099
申请日：2005-10-12
申请人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
发明人： Takehiko Orii , Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： F26B5/005 , H01L21/02052 , H01L21/67034 , H01L21/67051 , H01L21/6708
摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.
摘要翻译：根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心衬底比流体喷嘴。

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