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1. 发明授权

US06500270B2 Resist film removing composition and method for manufacturing thin film circuit element using the composition 失效
标题翻译：抗蚀膜去除组合物和使用该组合物制造薄膜电路元件的方法
公开(公告)号：US06500270B2
公开(公告)日：2002-12-31
申请号：US09176523
申请日：1998-10-21
申请人： Masahiro Nohara , Yukihiko Takeuchi , Taimi Oketani , Taketo Maruyama , Tetsuya Karita , Hisaki Abe , Tetsuo Aoyama
发明人： Masahiro Nohara , Yukihiko Takeuchi , Taimi Oketani , Taketo Maruyama , Tetsuya Karita , Hisaki Abe , Tetsuo Aoyama
IPC分类号： C23G100
CPC分类号： C11D7/5013 , C11D7/3218 , C11D7/3263 , C11D7/3272 , C11D11/0047
摘要： A resist film removing composition used in the manufacture of a thin film circuit element having an organic insulation film which comprises 50 to 70% by weight of an alkanolamine having 3 or more carbon atoms, 20 to 30% by weight of a water-miscible solvent and 10 to 20% by weight of water. The resist film removing composition can easily remove a resist film remaining after etching, without swelling the organic insulation film.
摘要翻译：一种用于制造具有有机绝缘膜的薄膜电路元件的抗蚀膜去除组合物，该有机绝缘膜包含50至70重量％的具有3个或更多个碳原子的链烷醇胺，20至30重量％的水混溶性溶剂和10〜20重量％的水。抗蚀剂膜去除组合物可以容易地除去蚀刻后残留的抗蚀剂膜，而不会使有机绝缘膜膨胀。

2. 发明授权

US06686322B1 Cleaning agent and cleaning process using the same 有权
标题翻译：清洁剂和清洁工艺使用相同
公开(公告)号：US06686322B1
公开(公告)日：2004-02-03
申请号：US09581118
申请日：2000-08-28
申请人： Masahiro Nohara , Ryou Hashimoto , Taimi Oketani , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
发明人： Masahiro Nohara , Ryou Hashimoto , Taimi Oketani , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
IPC分类号： C11D942
CPC分类号： H01L21/02071 , C03C23/0075 , C11D3/3947 , C11D7/08 , C11D7/3245 , C11D7/36 , C11D11/0047 , C23G1/24 , G02F1/13439 , G03F7/423 , H01L21/0273 , H01L21/31116
摘要： A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.
摘要翻译：一种清洁剂，其包含0.1至60重量％的氧化剂和0.0001至5重量％的螯合剂。在制造半导体集成电路的过程中，可以容易地用清洁剂去除用作蚀刻掩模的光致抗蚀剂的图案层和由干蚀刻形成的残留物。在液晶显示面板用基板的制造方法中，也可以容易地除去由干蚀刻形成的导电薄膜得到的残留物。在使用清洁剂的清洁方法中，薄膜电路器件中的配线材料或绝缘材料或用于制造半导体集成电路和液晶面板的基板的其它材料不被腐蚀。

3. 发明授权

US06458517B2 Photoresist stripping composition and process for stripping photoresist 失效
标题翻译：光刻胶剥离组合物和剥离光刻胶的方法
公开(公告)号：US06458517B2
公开(公告)日：2002-10-01
申请号：US09536643
申请日：2000-03-28
申请人： Masahiro Nohara , Yukihiko Takeuchi , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
发明人： Masahiro Nohara , Yukihiko Takeuchi , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： A photoresist stripping composition comprises (1) a nitrogen-containing organohydroxyl compound, (2) an alkylene glycol monoalkyl ether represented by the general formula: HO—(CpH2pO)q—R, wherein R is C1-C4 alkyl, p is 2 or 3, and q is 1, 2 or 3, (3) sugar or sugar alcohol, (4) a phosphorus-containing compound and (5) water. The photoresist stripping composition easily removes photoresist films on the inorganic substrate, and patterned photoresist films and photoresist residues remaining after etching and photoresist residues in a short period of time without corroding semiconductive materials, circuit-forming materials, insulating materials, etc.
摘要翻译：光致抗蚀剂剥离组合物包含（1）含氮有机羟基化合物，（2）由通式HO-（CpH2pO）qR表示的亚烷基二醇单烷基醚，其中R是C 1 -C 4烷基，p是2或3，和q为1,2或3，（3）糖或糖醇，（4）含磷化合物和（5）水。光致抗蚀剂剥离组合物容易地除去无机基材上的光致抗蚀剂膜，蚀刻后剩余的图案化光致抗蚀剂膜和光致抗蚀剂残留物在短时间内不腐蚀半导体材料，电路形成材料，绝缘材料等。

4. 发明授权

US06440326B1 Photoresist removing composition 有权
标题翻译：光刻胶去除组合物
公开(公告)号：US06440326B1
公开(公告)日：2002-08-27
申请号：US09524499
申请日：2000-03-13
申请人： Taketo Maruyama , Hisaki Abe , Tetsuya Karita , Tetsuo Aoyama
发明人： Taketo Maruyama , Hisaki Abe , Tetsuya Karita , Tetsuo Aoyama
IPC分类号： C09K1300
CPC分类号： C23G1/061 , G03F7/425 , H01L21/31133
摘要： A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.
摘要翻译：一种抗蚀剂去除组合物，其包含季铵氢氧化物，水溶性胺，烷基吡咯烷酮和糖或糖醇。光致抗蚀剂去除组合物可以容易地除去（i）施加到无机基材上的光致抗蚀剂层，（ii）在干蚀刻之后残留的光致抗蚀剂层，或（iii）灰化后的光致抗蚀剂残留物，在短时间内在低温下，以及使得布线图案材料的超精细加工能够制造高精度的电路图案而不会腐蚀材料。

5. 发明授权

US06815150B2 Photoresist stripping composition and process for stripping resist 失效
标题翻译：光刻胶剥离组合物和剥离抗蚀剂的方法
公开(公告)号：US06815150B2
公开(公告)日：2004-11-09
申请号：US10315073
申请日：2002-12-10
申请人： Hijiri Nakahara , Yukihiko Takeuchi , Ryou Hashimoto , Taketo Maruyama , Hisaki Abe
发明人： Hijiri Nakahara , Yukihiko Takeuchi , Ryou Hashimoto , Taketo Maruyama , Hisaki Abe
IPC分类号： G03F740
CPC分类号： G03F7/426 , G03F7/425
摘要： The invention provides a photoresist stripping composition including (a) an alkanolamine other than those alkanolamines falling under the definition of the below-described component (b); (b) an alkanolamine having in the molecule thereof at least one moiety represented by the following formula (1): (wherein each of R1 and R2 represents hydrogen or a methyl group, and R4 represents a C1-C5 alkyl group); (c) an amide solvent or a sulfoxide solvent; (d) a phosphorus-containing compound; (e) an oxycarboxylic acid; and (f) water. The photoresist stripping composition of the present invention can easily remove photoresist film formed on an inorganic substrate, photoresist residues, and dust or similar matter generated during an etching process in the production of liquid crystal display elements or semiconductor elements, and is highly anticorrosive to various materials such as semiconductor layer materials, conductive materials, and insulating materials.
摘要翻译：本发明提供一种光致抗蚀剂剥离组合物，其包含（a）不属于下述组分（b）定义的链烷醇胺的链烷醇胺; （b）在其分子中具有至少一个由下式（1）表示的部分的链烷醇胺:(其中R 1和R 2各自表示氢或甲基，R 4表示C 1 -C 5烷基）; （c）酰胺溶剂或亚砜溶剂; （d）含磷化合物; （e）羟基羧酸; 和（f）水。本发明的光致抗蚀剂剥离组合物可以容易地去除在液晶显示元件或半导体元件的制造中在无机基板上形成的光致抗蚀剂膜，光致抗蚀剂残留物，以及在蚀刻工艺期间产生的灰尘或类似物质，并且对各种诸如半导体层材料，导电材料和绝缘材料的材料。

6. 发明授权

US06265309B1 Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same 有权
标题翻译：用于制造半导体器件的清洁剂和使用该半导体器件的半导体器件的制造方法
公开(公告)号：US06265309B1
公开(公告)日：2001-07-24
申请号：US09309076
申请日：1999-05-10
申请人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
发明人： Hideto Gotoh , Tsuyoshi Matsui , Takayuki Niuya , Tetsuo Aoyama , Taketo Maruyama , Tetsuya Karita , Kojiro Abe , Fukusaburou Ishihara , Ryuji Sotoaka
IPC分类号： H01L2102
CPC分类号： H01L21/02071 , C11D3/044 , C11D3/2006 , C11D3/2082 , C11D3/33 , C11D11/0047 , H01L21/02063 , H01L21/31138 , Y10S438/906
摘要： A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D′) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.
摘要翻译：一种用于制造半导体器件的清洁剂。清洗剂是含有（A）含氟化合物，（B）硼酸盐，（C）水溶性有机溶剂和（D）特定季铵盐或（D） '）有机羧酸的特定铵盐或有机羧酸的特定胺盐。通过使用清洁剂可以有效地除去在干法蚀刻工艺期间形成的导电孔图案和导电线图案的侧壁上和周围的聚合物沉积物，而不影响通孔和导电线图案的尺寸。

7. 发明授权

US06638694B2 Resist stripping agent and process of producing semiconductor devices using the same 有权
标题翻译：抗剥离剂和使用其制造半导体器件的工艺
公开(公告)号：US06638694B2
公开(公告)日：2003-10-28
申请号：US10375105
申请日：2003-02-28
申请人： Kazuto Ikemoto , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
发明人： Kazuto Ikemoto , Hisaki Abe , Taketo Maruyama , Tetsuo Aoyama
IPC分类号： G03F742
CPC分类号： H01L21/02071 , G03F7/425
摘要： A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): wherein R1 and R2 are each hydrogen atom, C1-C8 alkyl or C1-C8 alkenyl. The resist stripping agent easily and efficiently removes resist films and resist residues remaining after etching or after ashing subsequent to etching in manufacturing semiconductor devices at low temperatures in short period of time. The resist stripping agent is resistant to corrosion against materials for substrate, circuits and insulating films.
摘要翻译：一种抗蚀剂剥离剂，其包含具有至少一个由下式（I）表示的官能团的特定链烷醇胺：其中R 1和R 2各自为氢原子，C 1 -C 8烷基或C 1 -C 8链烯基。抗蚀剂剥离剂容易且有效地去除在短时间内在低温下制造半导体器件中的蚀刻后或蚀刻后残留的抗蚀剂膜和抗蚀剂残留物。抗蚀剂剥离剂耐基材，电路和绝缘膜材料的腐蚀。

8. 发明授权

US06323169B1 Resist stripping composition and process for stripping resist 有权
标题翻译：抗剥离组合物和剥离抗蚀剂的方法
公开(公告)号：US06323169B1
公开(公告)日：2001-11-27
申请号：US09517592
申请日：2000-03-03
申请人： Kojiro Abe , Hideki Fukuda , Hisaki Abe , Taketo Maruyama
发明人： Kojiro Abe , Hideki Fukuda , Hisaki Abe , Taketo Maruyama
IPC分类号： C11D304
CPC分类号： H01L21/02071 , C11D3/33 , C11D3/361 , C11D3/364 , C11D3/3947 , C11D3/3956 , C11D7/10 , C11D11/0047 , G03F7/423 , H01L21/31133
摘要： An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.
摘要翻译：含水抗蚀剂剥离组合物包含（a）氧化剂，（b）螯合剂，（c）水溶性氟化合物和任选的（d）有机溶剂。还提供了剥离抗蚀剂膜并利用水性抗蚀剂剥离组合物蚀刻处理后残留的残留物的方法。在此过程中，半导体材料，电路形成材料，绝缘膜等的腐蚀被最小化，仅用水充分地进行冲洗，而不需要诸如酒精的有机溶剂。

9. 发明授权

US5962385A Cleaning liquid for semiconductor devices 有权
标题翻译：半导体器件清洗液
公开(公告)号：US5962385A
公开(公告)日：1999-10-05
申请号：US133627
申请日：1998-08-13
申请人： Taketo Maruyama , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
发明人： Taketo Maruyama , Ryuji Hasemi , Hidetoshi Ikeda , Tetsuo Aoyama
IPC分类号： G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3213 , C09K13/00 , C11D7/50
CPC分类号： H01L21/02071
摘要： A cleaning liquid for semiconductor devices comprising 1.0 to 5% by weight of a fluorine compound of the formula R.sub.4 NF, wherein R is a hydrogen atom or a C.sub.1 -C.sub.4 alkyl group, 72 to 80% by weight of an organic solvent soluble in water, and the remaining amount being water. The cleaning liquid can rapidly and completely at a low temperature remove resist residues left remaining after dry etching and ashing in the wiring step in the production of semiconductor integrated circuits, and the cleaning liquid does not corrode wiring materials.
摘要翻译：一种半导体器件用清洗液，其含有1.0〜5重量％的式R4NF的氟化合物，其中R为氢原子或C1-C4烷基，72〜80重量％的可溶于水的有机溶剂，余量为水。在半导体集成电路的制造中，清洗液能够在低温下快速且完全地除去在干法蚀刻和布线步骤中残留残留的抗蚀剂残留物，并且清洗液体不会腐蚀布线材料。

10. 发明授权

US08048331B2 Etching composition and etching process 有权
标题翻译：蚀刻成分和蚀刻工艺
公开(公告)号：US08048331B2
公开(公告)日：2011-11-01
申请号：US12943639
申请日：2010-11-10
申请人： Masahide Matsubara , Taketo Maruyama
发明人： Masahide Matsubara , Taketo Maruyama
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25F3/00
CPC分类号： C09K13/00
摘要： An etching composition which comprises at least one organic carboxylic acid compound selected from acetic acid, propionic acid, butyric acid, succinic acid, citric acid, lactic acid, malic acid, tartaric acid, malonic acid, maleic acid, glutaric acid, aconitic acid, 1,2,3-propanetricarboxylic acid and ammonium salts of these acids, a polysulfonic acid compound and water, and an etching process which comprises etching a conductive film comprising zinc oxide as the main component using the etching composition described above.
摘要翻译：含有选自乙酸，丙酸，丁酸，琥珀酸，柠檬酸，乳酸，苹果酸，酒石酸，丙二酸，马来酸，戊二酸，乌头酸等至少一种有机羧酸化合物的蚀刻组合物，这些酸的1,2,3-丙三羧酸和铵盐，聚磺酸化合物和水，以及蚀刻方法，其包括使用上述蚀刻组合物蚀刻包含氧化锌作为主要成分的导电膜。

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