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1. 发明授权

US5569954A Epitaxial In.sub.x Ga.sub.(1-x) As having a slanted crystallographic plane azimuth 失效
标题翻译：外延InxGa（1-x）As具有倾斜的晶面方位角
公开(公告)号：US5569954A
公开(公告)日：1996-10-29
申请号：US302766
申请日：1994-09-13
申请人： Masahiko Hata , Noboru Fukuhara , Hiroaki Takata , Katsumi Inui
发明人： Masahiko Hata , Noboru Fukuhara , Hiroaki Takata , Katsumi Inui
IPC分类号： H01L21/205 , H01L21/335 , H01S5/32 , H01S5/323 , H01L29/04
CPC分类号： H01L29/66462 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/0262 , H01S5/323 , H01S2304/04 , H01S5/3201 , H01S5/3202 , H01S5/32308
摘要： A semiconductor epitaxial substrate, characterized in that a crystal is formed by epitaxial growth on a gallium arsenide single crystal substrate whose crystallographic plane azimuth is slanted from that of one of {100} planes at an angle of not more than 1.degree., that at least part of the epitaxial crystal is an In.sub.x Ga.sub.(1-x) As crystal (wherein 0
摘要翻译： PCT No.PCT / JP94 / 00032 Sec。 371日期1994年9月13日 102（e）1994年9月13日PCT 1994年1月12日PCT PCT。公开号WO94 / 16459 日期1994年7月21日一种半导体外延基板，其特征在于通过在砷化镓单晶基板上外延生长形成晶体，其晶体方位角以不大于1的角度从{100}面之一倾斜 DEG，外延晶体的至少一部分是In x Ga（1-x）As晶体（其中0

2. 发明授权

US5441913A Process of making a semiconductor epitaxial substrate 失效
标题翻译：制造半导体外延基板的工艺
公开(公告)号：US5441913A
公开(公告)日：1995-08-15
申请号：US266680
申请日：1994-06-28
申请人： Masahiko Hata , Noboru Fukuhara , Hiroaki Takata , Katsumi Inui
发明人： Masahiko Hata , Noboru Fukuhara , Hiroaki Takata , Katsumi Inui
IPC分类号： H01L21/203 , H01L21/205 , H01L21/20
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/0262 , H01L21/02631
摘要： A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an In.sub.y Ga.sub.(1-y) As (0
摘要翻译：一种半导体外延基板及其制造方法，所述半导体外延基板包括其上具有In y Ga（1-y）As（0

3. 发明授权

US4976216A Apparatus for vapor-phase growth 失效
标题翻译：气相生长装置
公开(公告)号：US4976216A
公开(公告)日：1990-12-11
申请号：US269348
申请日：1988-11-10
申请人： Takayoshi Maeda , Masahiko Hata , Yasunari Zempo , Noboru Fukuhara , Hiroaki Takata
发明人： Takayoshi Maeda , Masahiko Hata , Yasunari Zempo , Noboru Fukuhara , Hiroaki Takata
IPC分类号： H01L21/205 , C23C16/458 , C30B25/02 , C30B25/08 , C30B25/12 , C30B25/14
CPC分类号： C30B25/14 , C23C16/4588 , C30B25/02 , C30B25/08 , C30B25/12 , C30B29/42
摘要： In an apparatus for vapor-phase growth which comprises a reactor having an inlet for the introduction of the gas containing a source material on its top and a susceptor provided in the downstream portion of the reactor, the improvement wherein the susceptor is generally in a conical or polygonal pyramid form consisting of an upper rectifying portion and a lower substrate holding portion, with the diameter of the susceptor in its lower portion increasing by a greater degree than in its upper portion.
摘要翻译：在用于气相生长的装置中，其包括具有用于引入其顶部具有源材料的气体的入口和设置在反应器的下游部分中的基座的反应器，其中基座大体上为圆锥形或由上部整流部分和下部基板保持部分组成的多边形棱锥形状，其下部中的基座的直径比其上部增加更大的程度。

4. 发明授权

US5603764A Process for crystal growth of III-V group compound semiconductor 失效
标题翻译： III-V族化合物半导体的晶体生长工艺
公开(公告)号：US5603764A
公开(公告)日：1997-02-18
申请号：US368872
申请日：1995-01-05
申请人： Yoshinobu Matsuda , Masahiko Hata , Noboru Fukuhara , Toshio Ishihara
发明人： Yoshinobu Matsuda , Masahiko Hata , Noboru Fukuhara , Toshio Ishihara
IPC分类号： H01L21/205 , C30B25/02 , C30B29/40
CPC分类号： C30B25/02 , C30B29/40
摘要： A process for crystal growth of III-V group compound semiconductor, which comprises pyrolyzing, in a gas phase, a material consisting of an organometallic compound and/or a hydride in the presence of an organic compound containing an oxygen atom-carbon atom direct bond, used as a dopant to grow a III-V group compound semiconductor crystal layer containing at least aluminum, of high electric resistance. Said process can grow a compound semiconductor layer of high electric resistance by the use of a dopant which enables the independent controls of oxygen concentration and aluminum concentration and which has a small effect of oxygen remaining.
摘要翻译： III-V族化合物半导体的晶体生长方法，其包括在气相中，在含有氧原子 - 碳原子直接键的有机化合物存在下，由有机金属化合物和/或氢化物组成的材料热解用作掺杂剂以生长具有高电阻的至少含有铝的III-V族化合物半导体晶体层。所述方法可以通过使用能够独立控制氧浓度和铝浓度并且具有小的氧剩余效果的掺杂剂来生长高电阻的化合物半导体层。

5. 发明授权

US5064778A Vapor-phase epitaxial growth method 失效
标题翻译：蒸气相外延生长法
公开(公告)号：US5064778A
公开(公告)日：1991-11-12
申请号：US472153
申请日：1990-01-30
申请人： Takayoshi Maeda , Masahiko Hata , Noboru Fukuhara , Tadeshi Watanabe
发明人： Takayoshi Maeda , Masahiko Hata , Noboru Fukuhara , Tadeshi Watanabe
IPC分类号： C30B25/02 , H01L21/205 , H01L21/20
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/0262 , Y10S148/065 , Y10S148/11
摘要： A vapor-phase epitaxial growth method for producing a Groups III-V compound semiconductor containing arsenic by vapor-phase epitaxial growth using arsenic trihydride as an arsenic source is disclosed, wherein said arsenic trihydride has a volatile impurity concentration of not more than 1.5 molppb on a germanium tetrahydride conversion. The resulting epitaxial crystal has a low residual carrier concentration and is applicable to a field effect transistor.

6. 发明授权

US08779471B2 Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer 失效
标题翻译：场效应晶体管，半导体晶片，场效应晶体管的制造方法及半导体晶片的制造方法
公开(公告)号：US08779471B2
公开(公告)日：2014-07-15
申请号：US13413216
申请日：2012-03-06
申请人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
发明人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L21/26553 , H01L29/4966 , H01L29/517 , H01L29/66318 , H01L29/66522
摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
摘要翻译：提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成的In x Ga 1-x As y 1 P 1-y 1（0

7. 发明授权

US07923752B2 Thin-film crystal wafer having pn junction and method for fabricating the wafer 有权
标题翻译：具有pn结的薄膜晶体晶片和用于制造晶片的方法
公开(公告)号：US07923752B2
公开(公告)日：2011-04-12
申请号：US10046739
申请日：2002-01-17
申请人： Hisashi Yamada , Noboru Fukuhara , Masahiko Hata
发明人： Hisashi Yamada , Noboru Fukuhara , Masahiko Hata
IPC分类号： H01L29/735 , H01L29/739
CPC分类号： H01L29/66318 , H01L29/205
摘要： A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and a control layer of a thin-film of InxAlyGa1−x−yP differing in composition from the n InxAlyGa1−x−yP of the second crystal layer is formed at the interface of the heterojunction. The control layer enables the energy discontinuity at the interface of the InxAlyGa1−x−yP/GaAs heterojunction to be set within a relatively broad range of values and thus enables the current amplification factor and the offset voltage to be matched to specification values by varying the energy band gap at the heterojunction.
摘要翻译：具有pn结的薄膜晶体晶片包括p GaAs的第一晶体层，n In x Al y Ga 1-x-y P的第二晶体层，第一和第二晶体层是形成异质结的晶格匹配层，以及控制在异质结的界面处形成与第二晶体层的n In x Al y Ga 1-x-y P的组成不同的In x Al y Ga 1-x-y P的薄膜层。控制层使InxAlyGa1-x-yP / GaAs异质结的界面处的能量不连续性设定在相对宽的值范围内，从而使电流放大系数和偏移电压能够通过改变异质结能带隙。

8. 发明授权

US08610450B2 Method of measuring electrical characteristics of semiconductor wafer 有权
标题翻译：测量半导体晶片电气特性的方法
公开(公告)号：US08610450B2
公开(公告)日：2013-12-17
申请号：US13273781
申请日：2011-10-14
申请人： Noboru Fukuhara , Masahiko Hata
发明人： Noboru Fukuhara , Masahiko Hata
IPC分类号： G01R31/26
CPC分类号： G01R31/025 , G01R31/129
摘要： There is provided a method of measuring a leakage current or a dielectric breakdown voltage of a semiconductor wafer that has a base wafer and a buffer layer formed on the base wafer. The method includes providing, on the buffer layer, a plurality of electrodes including a hole injection electrode made of a material that injects a hole into the buffer layer when an electric field is applied thereto, measuring an electric current flowing through a pair of electrodes or a voltage between the electrodes when a voltage or an electric current is applied to the pair of electrodes, the electrodes including at least one hole injection electrode, and measuring a leakage current or a dielectric breakdown voltage caused by hole migration in the semiconductor wafer based on the current flowing through the pair of electrodes or the voltage generated between the pair of the electrodes.
摘要翻译：提供了一种测量半导体晶片的漏电流或介电击穿电压的方法，该半导体晶片具有形成在基底晶片上的基底晶片和缓冲层。该方法包括在缓冲层上设置多个电极，该多个电极包括由施加电场的空穴注入到缓冲层中的材料制成的空穴注入电极，测量流过一对电极的电流或当对一对电极施加电压或电流时，电极之间的电压，所述电极包括至少一个空穴注入电极，并且测量基于半导体晶片中的空穴迁移引起的漏电流或介电击穿电压，基于流过该对电极的电流或在一对电极之间产生的电压。

9. 发明授权

US5332451A Epitaxially grown compound-semiconductor crystal 失效
标题翻译：外延生长化合物半导体晶体
公开(公告)号：US5332451A
公开(公告)日：1994-07-26
申请号：US875410
申请日：1992-04-29
申请人： Masahiko Hata , Noboru Fukuhara , Takayoshi Maeda
发明人： Masahiko Hata , Noboru Fukuhara , Takayoshi Maeda
IPC分类号： H01L21/20 , H01L21/205 , H01L21/338 , H01L29/205 , H01L29/778 , H01L29/812 , H01L29/36
CPC分类号： H01L29/8128 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02581 , H01L29/205
摘要： An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer layer comprises (A) a high-resistivity AlGaAs or AlGaInP layer doped with oxygen or/and a transition metal and, formed thereon, (B) a layer consisting of high-purity GaAs, InGaP, or AlGaAs.
摘要翻译：一种外延生长的化合物半导体晶体，其包含基板，在基板上直接或间接形成的缓冲层以及形成在缓冲层上的活性层。缓冲层包括（A）掺杂有氧或/和过渡金属的高电阻率AlGaAs或AlGaInP层，并在其上形成（B）由高纯度GaAs，InGaP或AlGaAs组成的层。

10. 发明申请

US20120228673A1 FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER 失效
标题翻译：场效应晶体管，半导体晶体管，生产场效应晶体管的方法和生产半导体晶体管的方法
公开(公告)号：US20120228673A1
公开(公告)日：2012-09-13
申请号：US13413216
申请日：2012-03-06
申请人： Masahiko HATA , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
发明人： Masahiko HATA , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
IPC分类号： H01L29/78 , H01L21/336 , H01L21/20
CPC分类号： H01L29/7786 , H01L21/26553 , H01L29/4966 , H01L29/517 , H01L29/66318 , H01L29/66522
摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
摘要翻译：提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成的In x Ga 1-x As y 1 P 1-y 1（0

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