专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07394070B2 Method and apparatus for inspecting patterns 失效
标题翻译：检查模式的方法和装置
公开(公告)号：US07394070B2
公开(公告)日：2008-07-01
申请号：US11314020
申请日：2005-12-22
申请人： Mari Nozoe , Yasunori Goto , Zhaohui Cheng
发明人： Mari Nozoe , Yasunori Goto , Zhaohui Cheng
IPC分类号： G01N23/00 , G21K7/00 , G21K5/10
CPC分类号： H01J37/026 , G01R31/307 , H01J37/04 , H01J37/263 , H01J37/28 , H01J2237/0048 , H01J2237/24592 , H01J2237/2817
摘要： When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1 in FIG. 14 corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.
摘要翻译：当晶片上方的电荷控制电极的电极电位降低时，图像亮度降低。图像亮度的变化点是图像的带正电状态和图像的带负电状态之间的切换点，显示图像的弱电状态。通过将该变化点设定为检查条件，可以减少晶片表面上的电荷量，并且可以进行稳定的晶片检查。估计图1中的施加电压V 1。 14对应于变化点，并且大致包括在由施加电压V 1附近的由虚线包围的区域的电压范围内。在该电压范围内，可以减少充电对检查条件下的检查的影响。

2. 发明申请

US20060163477A1 Method and apparatus for inspecting patterns 失效
标题翻译：检查模式的方法和装置
公开(公告)号：US20060163477A1
公开(公告)日：2006-07-27
申请号：US11314020
申请日：2005-12-22
申请人： Mari Nozoe , Yasunori Goto , Zhaohui Cheng
发明人： Mari Nozoe , Yasunori Goto , Zhaohui Cheng
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , G01R31/307 , H01J37/04 , H01J37/263 , H01J37/28 , H01J2237/0048 , H01J2237/24592 , H01J2237/2817
摘要： When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1 in FIG. 14 corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.
摘要翻译：当晶片上方的电荷控制电极的电极电位降低时，图像亮度降低。图像亮度的变化点是图像的带正电状态和图像的带负电状态之间的切换点，显示图像的弱电状态。通过将该变化点设定为检查条件，可以减少晶片表面上的电荷量，并且可以进行稳定的晶片检查。估计图1中的施加电压V 1。 14对应于变化点，并且大致包括在由施加电压V 1附近的由虚线包围的区域的电压范围内。在该电压范围内，可以减少充电对检查条件下的检查的影响。

3. 发明授权

US06952105B2 Inspection method and apparatus for circuit pattern of resist material 失效
标题翻译：抗蚀材料电路图案检测方法及装置
公开(公告)号：US06952105B2
公开(公告)日：2005-10-04
申请号：US10620702
申请日：2003-07-17
申请人： Zhaohui Cheng , Mari Nozoe
发明人： Zhaohui Cheng , Mari Nozoe
IPC分类号： H01L21/66 , G01N23/00 , G01R31/302 , G01R31/305 , G06T1/00 , H01J37/04 , H01J37/147 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/2817
摘要： A pattern inspecting technique, depending on the kind of materials, can reduce damage including shrinkage to materials when the materials are prone to such damage as shrinkage and spoilage caused by electron beam irradiation. This is accomplished by scanning a sample with a primary electron beam, detecting secondary electrons generated, or electrons reflected from the semiconductor device, or both the former and latter electrons, and converting the electrons into signals, and transforming the signals into an image, displaying the image, and detecting defective spots in the circuit pattern of the sample. The irradiation density (dose per unit area) of the electron beam is monitored and limited depending on the kind of material of the circuit pattern under inspection and the inspecting conditions, and damage, such as shrinkage and spoilage to the materials during electron beam irradiation, is reduced to an allowable range.
摘要翻译：取决于材料种类的图案检查技术可以减少材料收缩时的损伤，当材料容易受到由电子束照射引起的收缩和变质等损害时。这是通过用一次电子束扫描样品，检测产生的二次电子或从半导体器件反射的电子，或者前者和后面的电子，并将电子转换为信号，并将信号变换为图像，显示图像，并检测样品的电路图案中的缺陷点。电子束的照射密度（每单位面积的剂量）根据检查中的电路图案的材料的种类和检查条件进行监测和限制，并且在电子束照射期间对材料的收缩和变质等损害，减少到允许范围。

4. 发明授权

US07218126B2 Inspection method and apparatus for circuit pattern 失效
标题翻译：电路图案检查方法及装置
公开(公告)号：US07218126B2
公开(公告)日：2007-05-15
申请号：US11218762
申请日：2005-09-06
申请人： Zhaohui Cheng , Mari Nozoe
发明人： Zhaohui Cheng , Mari Nozoe
IPC分类号： G01R31/305 , G01R31/302 , G01N23/00
CPC分类号： H01J37/28 , H01J2237/2817
摘要： An apparatus for measuring a sample with a circuit pattern including at least a porous low-permittivity hydrogensilsesquioxane material or a material structurally or compositionally similar to the porous low-permittivity hydrogensilsesquioxane. The apparatus includes an electron beam optics unit which enables scanning of a primary electron beam onto the sample, a detector which detects a secondary electron or a reflected electron, an image processing unit which measures a desired portion of the sample irradiated with the primary electron beam based on an output signal of the detector, and a control unit which controls the irradiation energy and density of the primary electron beam onto the sample.
摘要翻译：一种用于测量具有包括至少多孔低介电常数倍半硅氧烷的电路图案的样品的设备，或者与多孔低介电常数倍半硅氧烷结构或组成相似的材料。该装置包括能够将一次电子束扫描到样品上的电子束光学单元，检测二次电子或反射电子的检测器，测量用一次电子束照射的样品的期望部分的图像处理单元基于检测器的输出信号，以及控制单元，其将一次电子束的照射能量和密度控制在样品上。

5. 发明申请

US20060028218A1 Inspection method and apparatus for circuit pattern 失效
标题翻译：电路图案检查方法及装置
公开(公告)号：US20060028218A1
公开(公告)日：2006-02-09
申请号：US11218762
申请日：2005-09-06
申请人： Zhaohui Cheng , Mari Nozoe
发明人： Zhaohui Cheng , Mari Nozoe
IPC分类号： G01R31/305
CPC分类号： H01J37/28 , H01J2237/2817
摘要： An apparatus for measuring a sample with a circuit pattern including at least a porous low-permittivity hydrogensilsesquioxane material or a material structurally or compositionally similar to the porous low-permittivity hydrogensilsesquioxane. The apparatus includes an electron beam optics unit which enables scanning of a primary electron beam onto the sample, a detector which detects a secondary electron or a reflected electron, an image processing unit which measures a desired portion of the sample irradiated with the primary electron beam based on an output signal of the detector, and a control unit which controls the irradiation energy and density of the primary electron beam onto the sample.
摘要翻译：一种用于测量具有包括至少多孔低介电常数倍半硅氧烷的电路图案的样品的设备，或者在多孔低介电常数氢倍半硅氧烷中结构或组成相似的材料。该装置包括能够将一次电子束扫描到样品上的电子束光学单元，检测二次电子或反射电子的检测器，测量用一次电子束照射的样品的期望部分的图像处理单元基于检测器的输出信号，以及控制单元，其将一次电子束的照射能量和密度控制在样品上。

6. 发明申请

US20050099189A1 Inspection method and apparatus for circuit pattern of resist material 失效
公开(公告)号：US20050099189A1
公开(公告)日：2005-05-12
申请号：US10620702
申请日：2003-07-17
申请人： Zhaohui Cheng , Mari Nozoe
发明人： Zhaohui Cheng , Mari Nozoe
IPC分类号： H01L21/66 , G01N23/00 , G01R31/302 , G01R31/305 , G06T1/00 , H01J37/04 , H01J37/147 , H01J37/28
CPC分类号： H01J37/28 , H01J2237/2817
摘要： A pattern inspecting technique, depending on the kind of materials, can reduce damage including shrinkage to materials when the materials are prone to such damage as shrinkage and spoilage caused by electron beam irradiation. This is accomplished by scanning a sample with a primary electron beam, detecting secondary electrons generated, or electrons reflected from the semiconductor device, or both the former and latter electrons, and converting the electrons into signals, and transforming the signals into an image, displaying the image, and detecting defective spots in the circuit pattern of the sample. The irradiation density (dose per unit area) of the electron beam is monitored and limited depending on the kind of material of the circuit pattern under inspection and the inspecting conditions, and damage, such as shrinkage and spoilage to the materials during electron beam irradiation, is reduced to an allowable range.

7. 发明授权

US08552373B2 Charged particle beam device and sample observation method 有权
标题翻译：带电粒子束装置和样品观察方法
公开(公告)号：US08552373B2
公开(公告)日：2013-10-08
申请号：US13321583
申请日：2010-05-18
申请人： Momoyo Enyama , Hiroya Ohta , Taku Ninomiya , Mari Nozoe
发明人： Momoyo Enyama , Hiroya Ohta , Taku Ninomiya , Mari Nozoe
IPC分类号： H01J37/26 , H01J37/28 , G01N23/22 , G01N23/225
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2446 , H01J2237/2817
摘要： Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.
摘要翻译：公开了一种带电粒子束装置，其中提供多波束二次电子检测器（121a，121b，121c）和单光束检测器（140; 640），并且在系统控制单元（135）的控制下，光学系统控制电路（139）控制透镜和选择光阑（141），并将电光条件切换到用于多光束模式的光学条件和单光束模式之间，从而一个带电粒子束装置可以作为多光束带电粒子装置和单个光束带电粒子装置通过切换。因此，观察条件根据待观察的目标灵活地变化，并且可以高精度和高效率地观察样品。

8. 发明申请

US20110133066A1 PATTERN INSPECTION DEVICE AND METHOD 审中-公开
标题翻译：图案检查装置及方法
公开(公告)号：US20110133066A1
公开(公告)日：2011-06-09
申请号：US13059540
申请日：2009-09-14
申请人： Mari Nozoe , Taku Ninomiya
发明人： Mari Nozoe , Taku Ninomiya
IPC分类号： H01J37/26 , G12B13/00 , G01N23/22
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/20292 , H01J2237/2817 , H01L22/12
摘要： An inspection apparatus and method are provided capable of suppressing electron beam focus drifts and irradiation-position deviations caused by sample surface charge-up by irradiation of an electron beam during micropattern inspection to thereby avoid false defect detection and also shorten an inspection time. The apparatus captures a plurality of images of alignment marks provided at dies, stores in a storage device deviations between the central coordinates of alignment mark images and the coordinates of the marks as a coordinate correction value, measures heights at a plurality of coordinates on the sample surface, captures images of the measured coordinates to perform focus adjustment, saves the relationship between such adjusted values and the sensor-measured heights in the storage as height correction values, and uses inspection conditions including the image coordinate correction values saved in the storage and the height correction values to correct the image coordinates and height of the sample.
摘要翻译：提供了一种检查装置和方法，其能够通过微图案检查期间的电子束照射而抑制由样品表面充电引起的电子束聚焦漂移和照射位置偏差，从而避免错误检测，并且缩短检查时间。该装置捕获在模具处设置的对准标记的多个图像，存储在存储装置中的对准标记图像的中心坐标和标记坐标之间的偏差作为坐标校正值，测量样本上的多个坐标上的高度表面，捕获测量坐标的图像以执行焦点调整，将这种调整值与存储器中传感器测量的高度之间的关系保存为高度校正值，并使用检查条件，包括保存在存储器中的图像坐标校正值和高度校正值来校正样品的图像坐标和高度。

9. 发明申请

US20080302964A1 METHOD AND APPARATUS FOR INSPECTING INTEGRATED CIRCUIT PATTERN 有权
标题翻译：用于检查集成电路图案的方法和装置
公开(公告)号：US20080302964A1
公开(公告)日：2008-12-11
申请号：US12190388
申请日：2008-08-12
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01N23/00 , G01R31/305
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：电路图案检查方法及其装置，其中待检查的样品的待检查部分的整体部分处于预定的改变状态，被检查的部分用成像高分辨率照射，在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

10. 发明授权

US07211797B2 Inspection method and inspection system using charged particle beam 失效
标题翻译：使用带电粒子束的检查方法和检查系统
公开(公告)号：US07211797B2
公开(公告)日：2007-05-01
申请号：US11098699
申请日：2005-04-05
申请人： Hidetoshi Nishiyama , Mari Nozoe
发明人： Hidetoshi Nishiyama , Mari Nozoe
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , H01J37/226 , H01J37/28 , H01J2237/047 , H01J2237/2594 , H01J2237/2817
摘要： The present invention provides an inspection technique using a charged particle beam by which a method of setting a condition for optimally charging an object to be inspected without relying on an operator's experience is established and a voltage contrast image with higher efficiency of defect detection than ever before can be obtained. The inspection method comprises the steps of scanning an area on a surface of a substrate having a specific pattern formed thereon with a primary charged particle beam, detecting signals of secondary electrons emitted from the area, forming an image of the area from detected signals, and generating a histogram from the image. All these steps are performed each time a condition of irradiation with the charged particle beam is changed. When two or more separate peaks appear in the histogram, the histogram is determined as an optimal condition for inspection, and inspection is performed based on the image obtained under that condition.
摘要翻译：本发明提供了使用带电粒子束的检查技术，通过该技术，建立了不依赖于操作者的经验来设定用于最佳地对被检查物体进行充电的条件的方法以及比以往更高的缺陷检测效率的电压对比图像可以获得。检查方法包括以下步骤：利用初级带电粒子束扫描其上形成有特定图案的基板的表面上的区域，检测从该区域发射的二次电子的信号，从检测到的信号形成该区域的图像，以及从图像生成直方图。每当改变带电粒子束照射的条件时，都执行所有这些步骤。当直方图中出现两个或多个单独的峰时，直方图被确定为检查的最佳条件，并且基于在该条件下获得的图像进行检查。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式