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1. 发明申请

WO2005038873A2 SYSTEM AND METHOD FOR REMOVAL OF PHOTORESIST IN TRANSISTOR FABRICATION FOR INTEGRATED CIRCUIT MANUFACTURING 审中-公开
标题翻译：用于集成电路制造的晶体管制造中去除光电子元件的系统和方法
公开(公告)号：WO2005038873A2
公开(公告)日：2005-04-28
申请号：PCT/US2004/033785
申请日：2004-10-12
申请人： MATTSON TECHNOLOGY, INC , SAVAS, Stephen, E. , XU, Songlin , DUTTON, David , KADAVANICH, Andreas , GEORGE, Rene
发明人： SAVAS, Stephen, E. , XU, Songlin , DUTTON, David , KADAVANICH, Andreas , GEORGE, Rene
IPC分类号： H01L
CPC分类号： H01L21/31138 , H01L21/02063 , H01L21/02071 , H01L21/67207
摘要： In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.
摘要翻译：在用于制造集成电路以包括支持电互连结构的有源器件结构的技术中，在有源器件结构上形成电连接结构之前，使用光致抗蚀剂层。通过将活性器件结构的光致抗蚀剂和暴露区域暴露于一种或多种使用包含作为反应性物质的主要来源的氢气的气体混合物在等离子体源中产生的反应性物质来除去光致抗蚀剂和相关残余物，例如光致抗蚀剂和残留物连续暴露于基于氢的反应物种。描述了相关联的系统架构，其提供了处理室中的大量氢气流。

2. 发明申请

WO2004090943A2 PLASMA UNIFORMITY 审中-公开
标题翻译：等离子体均质
公开(公告)号：WO2004090943A2
公开(公告)日：2004-10-21
申请号：PCT/US2004/009894
申请日：2004-03-26
申请人： GEORGE, Rene , KADAVANICH, Andreas , DEVINE, Daniel, J. , SAVAS, Stephen, E. , ZAJAC, John , SHAN, Hongqing
发明人： GEORGE, Rene , KADAVANICH, Andreas , DEVINE, Daniel, J. , SAVAS, Stephen, E. , ZAJAC, John , SHAN, Hongqing
IPC分类号： H01L
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32431 , H01L21/02104 , H01L21/3065 , H01L21/6715 , H05H1/46
摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
摘要翻译：实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。描述了更均匀的径向等离子体工艺，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

3. 发明申请

WO2004082857A1 SYSTEMS AND METHODS FOR CLEANING SEMICONDUCTOR SUBSTRATES USING A REDUCED VOLUME OF LIQUID 审中-公开
标题翻译：使用减少液体体积清洗半导体基板的系统和方法
公开(公告)号：WO2004082857A1
公开(公告)日：2004-09-30
申请号：PCT/US2003/007743
申请日：2003-03-12
申请人： MATTSON TECHNOLOGY INC. , SAVAS, Stephen, E. , ZAJAC, John , GALEWSKI, Carl, A.
发明人： SAVAS, Stephen, E. , ZAJAC, John , GALEWSKI, Carl, A.
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , B08B3/02
摘要： Embodiments of the present invention are directed toward cleaning semiconductor substrates by dividing a processing chamber into a high-pressure compartment and a low-pressure compartment using a baffle. The baffle may include a pattern of nozzles that provide a flow path between the high pressure compartment and the low pressure compartment and that maintain the two compartments at substantially different pressures. A ratable substrate support is positioned within the low pressure compartment, and an inlet port injects a cleaning mist and a carrier gas into the high pressure compartment. The pressure differential between the two compartments accelerates the droplets from the cleaning mist through the nozzles of the baffle into the low pressure compartment toward the substrate, where a portion of the cleaning mist impacts on the surface of the substrate to form a liquid film or to eject elements of the surface film on the wafer. The substrate support is configured to rotate the substrate such that the liquid film flows radially across the substrate. There may be an independent source of vapor of the same or different type as the mist which is introduced into the low pressure region and provides for liquid condensation on the wafer. This helps replace the liquid lost by splashing or centrifugal flow off the wafer edge. Waste products from micro features on the substrate diffuse into the liquid film, where portions of the liquid film and diffused waste products are eventually radially propelled off the edge of the substrate to be collected as waste or splashed off. Embodiments of the present invention are capable of cleaning a substrate with a significantly reduced volume of liquid relative to a conventional liquid bath.
摘要翻译：本发明的实施例涉及通过将处理室分成高压室和使用挡板的低压隔室来清洁半导体衬底。挡板可以包括喷嘴的图案，其提供高压隔室和低压隔室之间的流动路径，并且将两个隔间保持在基本上不同的压力。可压缩的基板支撑件位于低压隔室内，并且入口端口将清洁雾和载气注入高压隔室中。两个隔室之间的压力差使得从清洁雾通过挡板的喷嘴将液滴加速到朝向基板的低压室中，其中一部分清洁薄雾冲击基板的表面以形成液膜或者排出晶片上的表面膜的元件。衬底支撑件被配置为旋转衬底，使得液体膜径向流过衬底。可以存在与引入低压区域并在晶片上提供液体冷凝的雾相同或不同类型的独立蒸气源。这有助于更换从晶片边缘溅出或离心流失的液体。基板上的微观特征的废品会扩散到液膜中，其中液膜和扩散废物的部分最终从衬底的边缘径向推出，以作为废物或溅出而被收集。本发明的实施例能够相对于常规的液体浴来清洗具有显着减少的液体体积的基底。

4. 发明申请

WO2005072211A3 SYSTEM AND METHOD FOR REMOVAL OF PHOTORESIST AND RESIDUES FOLLOWING CONTACT ETCH WITH A STOP LAYER PRESENT 审中-公开
公开(公告)号：WO2005072211A3
公开(公告)日：2005-08-11
申请号：PCT/US2005/001693
申请日：2005-01-19
申请人： MATTSON TECHNOLOGY, INC. , SAVAS, Stephen, E. , HELLE, Wolfgang
发明人： SAVAS, Stephen, E. , HELLE, Wolfgang
IPC分类号： H01L21/311 , H01L21/302
摘要： In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one contact opening is associated with each contact. Stripping of the patterned layer of photoresist and related residues is performed. After stripping, the stop layer is removed from the contacts. In one feature, the stop layer is removed from the contacts by etching the stop layer using a plasma that is generated from a plasma gas input that includes hydrogen and essentially no oxygen. In another feature, the photoresist is stripped after the stop layer is removed. Stripping the patterned layer of photoresist and the related residues is performed, in this case, using a plasma that is formed predominantly including hydrogen without oxygen.

5. 发明申请

WO2010068542A1 METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES 审中-公开
标题翻译：在最小化现有结构影响下生长硅氧化物薄膜的方法和装置
公开(公告)号：WO2010068542A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/066482
申请日：2009-12-03
申请人： MATTSON TECHNOLOGY, INC. , PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
发明人： PEUSE, Bruce, W. , HU, Yao, Zhi , TIMANS, Paul, Janis , XING, Guangcai , LERCH, Wilfried , TAY, Sing-Pin , SAVAS, Stephen, E. , ROTERS, Georg , NENYEI, Zsolt , SINHA, Ashok
IPC分类号： H01L21/316
CPC分类号： H01L21/31654 , H01L21/0223 , H01L21/02238 , H01L21/02323 , H01L21/0234 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
摘要翻译：描述了等离子体辅助低温自由基氧化。除了被氧化的硅之外，氧化对于可能存在的金属或金属氧化物是选择性的。选择性通过适当选择工艺参数来实现，主要是H2与O2气的比例。可以通过将H 2 O蒸汽注入到等离子体中来扩大工艺窗口，从而可以在相对低的温度下在TiN和W的存在下氧化硅。通过使用具有远离等离子体和流动基团的装置到衬底上但阻止离子到达衬底的装置来改善选择性氧化。

6. 发明公开

EP0507885A1 A LOW FREQUENCY INDUCTIVE RF PLASMA REACTOR 失效
标题翻译：感应等离子体反应器在较低的高频范围。
公开(公告)号：EP0507885A1
公开(公告)日：1992-10-14
申请号：EP91904021.0
申请日：1991-01-02
申请人： SAVAS, Stephen, E.
发明人： SAVAS, Stephen, E.
IPC分类号： C23F4 , H01J37 , H01L21 , H05H1
CPC分类号： H01J37/321 , H01J37/32706
摘要： Réacteur à plasma à puissance hf (43) couplé de manière inductive dans la chambre (50) du réacteur, afin de produire un champ magnétique hf perpendiculaire à un piédestal sur lequel une tranche est placée pour être traitée. Le piédestal est une électrode alimentée en puissance, à laquelle une puissance (51) est couplée afin de commander la tension de la cuirasse du piédestal. Ce réacteur est particulièrement adapté à des gravures tendres et à des procédés dans lesquels il est avantageux de coupler beaucoup plus de puissance dans la production d'ions que dans la production de radicaux libres. Des cages de Faraday (46) ainsi qu'une source de champs magnétiques (53 à 55) contribuent à contenir la puissance dans la chambre.

7. 发明申请

WO2020033294A1 SYSTEMS AND METHODS FOR WORKPIECE PROCESSING USING NEUTRAL ATOM BEAMS 审中-公开
公开(公告)号：WO2020033294A1
公开(公告)日：2020-02-13
申请号：PCT/US2019/045077
申请日：2019-08-05
申请人： MATTSON TECHNOLOGY, INC. , BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
发明人： SAVAS, Stephen, E.
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065
摘要： Plasma processing systems and methods are provided. In one example, a system includes a processing chamber having a workpiece support. The workpiece is configured to support a workpiece. The system includes a plasma source configured to induce a plasma from a process gas in a plasma chamber to generate one or more species of negative ions. The system includes a grid structure configured to accelerate the one or more negative ions towards the workpiece. The grid structure can include a first grid plate, a second grid plate, and one or more magnetic elements positioned between the first grid plate and second grid plate to reduce electrons accelerated through the first grid plate. The system can include a neutralizer cell disposed downstream of the grid structure configured to detach extra electrons from ions of the one or more species of negative ions to generate energetic neutral species for processing the workpiece.

8. 发明申请

WO1996015545A1 INDUCTIVE PLASMA REACTOR 审中-公开
标题翻译：电感等离子体反应器
公开(公告)号：WO1996015545A1
公开(公告)日：1996-05-23
申请号：PCT/US1995014614
申请日：1995-11-13
申请人： MATTSON TECHNOLOGY, INC.
发明人： MATTSON TECHNOLOGY, INC. , SAVAS, Stephen, E. , MATTSON, Brad, S. , HAMMOND, Martin, L. , SELBREDE, Steven, C.
IPC分类号： H01J37/32
CPC分类号： H01J37/32871 , H01J37/321 , H01J37/32357 , H01J37/32422 , H01J37/32706 , Y10S156/912
摘要： A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A split Faraday shield is interposed between the induction coil and the reactor chamber to substantially block the capacitive coupling of energy into the reactor chamber which may modulate the plasma potential. The configuration of the split Faraday shield may be selected to control the level of modulation of the plasma potential. For etch processes, a separate powered electrode may be used to accelerate ions toward a wafer surface. For isotropic etching processes, charged particles may be filtered from the gas flow, while a neutral activated species passes unimpeded to a wafer surface.
摘要翻译：描述了等离子体反应器和半导体晶片的处理方法。将气体引入反应室。感应线圈围绕反应室。 RF功率被施加到感应线圈并感应耦合到反应器室中，形成等离子体。分裂的法拉第屏蔽被插入在感应线圈和反应室之间，以基本上阻挡能量进入反应室的电容耦合，这可以调制等离子体电位。可以选择分裂法拉第屏蔽的配置来控制等离子体电位的调制水平。对于蚀刻工艺，可以使用单独的供电电极来将离子加速朝向晶片表面。对于各向同性蚀刻工艺，可以从气流中过滤带电粒子，而中性活性物质无阻碍地通过晶片表面。

9. 发明申请

WO2021011771A1 VARIABLE MODE PLASMA CHAMBER UTILIZING TUNABLE PLASMA POTENTIAL 审中-公开
公开(公告)号：WO2021011771A1
公开(公告)日：2021-01-21
申请号：PCT/US2020/042329
申请日：2020-07-16
申请人： MATTSON TECHNOLOGY, INC. , BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.
发明人： SAVAS, Stephen, E. , MA, Shawming
IPC分类号： H01J37/32
摘要： Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus can include a plasma chamber configured to be able to hold a plasma. The plasma processing apparatus can include a dielectric window forming at least a portion of a wall of the plasma chamber. The plasma processing apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma from the process gas in the plasma chamber when energized with radio frequency (RF) energy. The plasma processing apparatus can include a processing chamber having a workpiece support configured to support a workpiece. The plasma processing apparatus can include an electrostatic shield located between the inductive coupling element and the dielectric window. The electrostatic shield can be grounded via a tunable reactive impedance circuit to a ground reference.

10. 发明公开

EP4000088A1 ENHANCED IGNITION IN INDUCTIVELY COUPLED PLASMAS FOR WORKPIECE PROCESSING 审中-公开
公开(公告)号：EP4000088A1
公开(公告)日：2022-05-25
申请号：EP20851516.3
申请日：2020-08-11
申请人： Mattson Technology, Inc. , BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD
发明人： SAVAS, Stephen, E. , MA, Shawming
IPC分类号： H01J37/32 , G21B1/23

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