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1. 发明申请

WO2005112139A2 SURFACE PLASMON COUPLED NONEQUILIBRIUM THERMOELECTRIC DEVICES 审中-公开
标题翻译：表面等离子体耦合非平衡热电装置
公开(公告)号：WO2005112139A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/015313
申请日：2005-05-03
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , CHEN, Gang , YANG, Ronggui , NARAYANASWAMY, Arvind
发明人： CHEN, Gang , YANG, Ronggui , NARAYANASWAMY, Arvind
IPC分类号： H01L35/00
CPC分类号： H01L35/00 , H01J45/00 , H01L35/30
摘要： A surface-plasmon-coupled thermoelectric apparatus includes a first surfaceplasmon substrate and a thermoelectric substrate electrically coupled to a plurality of electrodes. The substrates are electrically isolated from each other, and a first face of the thermoelectric substrate opposes a first face of the first surface-plasmon substrate to define a phonon insulating gap. A method of transferring thermal energy across the phonon insulating gap includes creating a first surface-plasmon polariton at the first surface-plasmon substrate when the first surface-plasmon substrate is coupled to a first thermal reservoir. Also included is creating a nonequilibrium state between the electron temperature and the phonon temperature at a first face of the thermoelectric substrate, when a second face of the thermoelectric substrate is coupled to a second thermal reservoir. Also included is coupling the first surface plasmon polariton with electrons in the thermoelectric substrate across the phonon insulating gap, thereby transferring thermal energy between the thermal reservoirs through the phonon insulating gap.
摘要翻译：表面等离子体耦合热电装置包括电耦合到多个电极的第一表面积衬底和热电衬底。基板彼此电隔离，并且热电基板的第一面与第一表面等离子体激元基板的第一面相对以限定声子绝缘间隙。传输热能穿过声子绝缘间隙的方法包括当第一表面等离子体激元基板耦合到第一热存储器时，在第一表面等离子体激元基板处产生第一表面等离子体激元。还包括当热电基板的第二面耦合到第二热存储器时，在热电基板的第一面处在电子温度和声子温度之间产生非平衡状态。还包括将第一表面等离子体激元与热电基片中的电子耦合穿过声子绝缘间隙，从而通过声子绝缘间隙在热存储器之间传递热能。

2. 发明申请

WO2008094903A2 MULTISTAGE THICK FILM THERMOELECTRIC DEVICES 审中-公开
标题翻译：多层厚膜热电器件
公开(公告)号：WO2008094903A2
公开(公告)日：2008-08-07
申请号：PCT/US2008/052305
申请日：2008-01-29
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) , CHEN, Gang , CHEN, Xiaoyuan , YANG, Ronggui
发明人： CHEN, Gang , CHEN, Xiaoyuan , YANG, Ronggui
IPC分类号： H01L35/32
CPC分类号： H01L35/325
摘要： The present invention generally provides multistage thermoelectric coolers and methods for their fabrication. For example, in one aspect, a multistage thermoelectric cooler is disclosed that includes at least two cooling stages, each of which comprises a p-type leg portion and an n-type leg portion coupled to form a p-n junction. The p-n junctions of the two stages are thermally and electrically coupled such that at least a portion of a current flowing, during operation of the device, through one stage is coupled to the other. Further, at least one of the p- or n-type leg portions of one stage forms a unitary structure with a corresponding p- or n-type leg portion of the other stage.
摘要翻译：本发明通常提供多级热电冷却器及其制造方法。例如，在一个方面，公开了一种多级热电冷却器，其包括至少两个冷却级，每个冷却级包括连接形成p-n结的p型腿部和n型腿部。两级的p-n结被热和电耦合，使得在器件的操作期间流过一级的电流的至少一部分耦合到另一级。此外，一级的p型或n型脚部中的至少一个形成具有另一级的对应的p型或n型脚部的单一结构。

3. 发明申请

WO2014205378A1 FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 审中-公开
标题翻译：稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备
公开(公告)号：WO2014205378A1
公开(公告)日：2014-12-24
申请号：PCT/US2014/043461
申请日：2014-06-20
申请人： UNIVERSITY OF HOUSTON SYSTEM , JIE, Qing , REN, Zhifeng , CHEN, Gang , MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人： JIE, Qing , REN, Zhifeng , CHEN, Gang
IPC分类号： H01L35/12 , H01L35/34
CPC分类号： H01L35/34 , H01L35/08 , H01L35/14 , H01L35/20 , H01L35/22
摘要： Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi 2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi 2 . In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 µΩ•cm 2 .
摘要翻译：公开了用于制造电触头的n型和p型填充方钴矿热电腿的方法。将CoSi 2和掺杂剂的第一材料球磨以形成用n型方钴矿的第二粉末热机械加工的第一粉末，以形成设置在第一层和第三层之间的n型方钴矿层掺杂CoSi2。此外，将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一粉末，其用p型方钴矿层热机械加工以形成p型方钴矿层“第二层”设置在第一和第三层之间。在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的比接触电阻小于约10.0μΩ·cmgr·cm 2。

4. 发明申请

WO2010065635A2 SUB-WAVELENGTH METALLIC CONE STRUCTURES AS SELECTIVE SOLAR ABSORBER 审中-公开
标题翻译：亚波长金属结构作为选择性太阳能吸收器
公开(公告)号：WO2010065635A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066408
申请日：2009-12-02
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , CHEN, Gang , HU, Lu , CHEN, Xiaoyuan , CHIESA, Matteo
发明人： CHEN, Gang , HU, Lu , CHEN, Xiaoyuan , CHIESA, Matteo
IPC分类号： F24J2/46 , F24J2/48 , B32B15/04
CPC分类号： G02B1/118 , C25D5/34 , C25D5/44 , C25D11/02 , C25D11/04 , C25D11/24 , F24S70/25 , F24S70/30 , F24S70/60 , G02B1/005 , H01L31/02168 , H01L35/30 , Y02E10/44 , Y02E10/50
摘要： In one aspect, the present invention provides a radiation-absorbing structure, which includes a metallic layer and a plurality of protuberances formed in the metallic layer. The protuberances are configured to selectively enhance radiation absorptance at wavelengths less than a cut-off wavelength, for example, for incident radiation wavelengths less than about 2500 nm (2.5 microns), hi some cases, the cut-off wavelength below which the protuberance provide enhanced radiation absorptance can be about 2000 nm or 1800 nm. For example, the protuberances can enhance radiation absorptance for wavelengths in a range of about 300 nm to about 2500 nm, or in a range of about 300 nm to about 2000 nm, or in a range of about 300 nm to about 1800 nm. Further, in many embodiments the radiation absorbing structure exhibits a low emissivity at longer wavelengths, e.g., at wavelengths greater than about 3000 nm.
摘要翻译：一方面，本发明提供了一种辐射吸收结构，其包括金属层和形成在金属层中的多个突起。突起被配置成选择性地增强在小于截止波长的波长处的辐射吸收率，例如，对于小于约2500nm（2.5微米）的入射辐射波长，在一些情况下，突起提供的截止波长增强的辐射吸收率可以是约2000nm或1800nm。例如，突起可以增强在约300nm至约2500nm的范围内或在约300nm至约2000nm的范围内或在约300nm至约1800nm的范围内的波长的辐射吸收率。此外，在许多实施例中，辐射吸收结构在较长波长处表现出低发射率，例如在大于约3000nm的波长处。

5. 发明申请

WO2015047477A2 SYSTEMS AND METHODS FOR THE SYNTHESIS OF HIGH THERMOELECTRIC PERFORMANCE DOPED-SnTe MATERIALS 审中-公开
标题翻译：用于合成高热电性能掺杂SnTe材料的系统和方法
公开(公告)号：WO2015047477A2
公开(公告)日：2015-04-02
申请号：PCT/US2014/042765
申请日：2014-06-17
申请人： UNIVERSITY OF HOUSTON SYSTEM , MASSACHUSETTS INSTITUTE OF TECHNOLOGY , REN, Zhifeng , ZHANG, Qian , CHEN, Gang
发明人： REN, Zhifeng , ZHANG, Qian , CHEN, Gang
IPC分类号： H01L35/16 , H01L35/34
CPC分类号： H01L35/16 , H01L35/34
摘要： A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit ( ZT ) of 1.1 and a Seebeck coefficient of at least 50 µV/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit ( ZT ) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 µV/K at any temperature.
摘要翻译：包含锡（Sn），碲（Te）和至少一种掺杂物的热电组合物，所述掺杂物包含1.1的峰值无量纲品质因数（ZT）和塞贝克系数至少50μV/ K的热电组合物和制造该热电组合物的方法。多个组件设置在球磨容器中，其中所述多个组件包含锡（Sn），碲（Te）和至少一种掺杂剂（例如铟（In））。随后例如通过热压对部件进行机械和热处理。响应于机械 - 热处理，形成热电组合物，其中热电组合物包含热电组合物的无量纲性能指数（ZT）为至少0.8，并且其中塞贝克系数该热电组合物在任何温度下都至少为50μV/ K。

6. 发明申请

WO2014204671A1 GRADIENT SiNO ANTI-REFLECTIVE LAYERS IN SOLAR SELECTIVE COATINGS 审中-公开
标题翻译：太阳能选择性涂层中的梯度SiNO抗反射层
公开(公告)号：WO2014204671A1
公开(公告)日：2014-12-24
申请号：PCT/US2014/041209
申请日：2014-06-06
申请人： UNIVERSITY OF HOUSTON SYSTEM , MASSACHUSETTS INSTITUTE OF TECHNOLOGY , REN, Zhifeng , CAO, Feng , SUN, Tianyi , CHEN, Gang
发明人： REN, Zhifeng , CAO, Feng , SUN, Tianyi , CHEN, Gang
IPC分类号： C23C30/00 , F24J2/46 , F24J2/48
CPC分类号： F24S70/20 , C23C14/027 , C23C14/0688 , C23C28/322 , C23C28/324 , C23C28/325 , C23C28/34 , C23C28/36 , F24S70/30 , Y02E10/40
摘要： A solar selective coating includes a substrate, a cermet layer having nanoparticles therein deposited on the substrate, and an anti-reflection layer deposited on the cermet layer. The cermet layer and the anti-reflection layer may each be formed of intermediate layers. A method for constructing a solar-selective coating is disclosed and includes preparing a substrate, depositing a cermet layer on the substrate, and depositing an anti-reflection layer on the cermet layer.
摘要翻译：太阳能选择性涂层包括基底，在基底上沉积有纳米颗粒的金属陶瓷层，以及沉积在金属陶瓷层上的抗反射层。金属陶瓷层和抗反射层各自可以由中间层形成。公开了一种构建太阳能选择性涂层的方法，包括制备衬底，在衬底上沉积金属陶瓷层，并在金属陶瓷层上沉积抗反射层。

7. 发明申请

WO2011085297A1 NANOSTRUCTURED ARRAYS FOR RADIATION CAPTURE STRUCTURES 审中-公开
标题翻译：用于辐射捕获结构的纳米结构阵列
公开(公告)号：WO2011085297A1
公开(公告)日：2011-07-14
申请号：PCT/US2011/020651
申请日：2011-01-10
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , HAN, Sang, Eon , MAVROKEFALOS, Anastassios , BRANHAM, Matthew, Sanders , CHEN, Gang
发明人： HAN, Sang, Eon , MAVROKEFALOS, Anastassios , BRANHAM, Matthew, Sanders , CHEN, Gang
IPC分类号： H01L31/0236
CPC分类号： H01L31/035209 , H01L31/02363 , Y02E10/50
摘要： Silicon nanohole arrays are disclosed as light absorbing structures for various devices such as solar photovoltaics. To obtain the same ultimate efficiency as a standard 300 micrometer crystalline silicon wafer, nanohole arrays require less silicon by mass. Moreover, calculations suggest that nanohole arrays may have efficiencies superior to nanorod arrays for practical thicknesses. With well-established fabrication techniques, nanohole arrays have great potential for efficient solar photovoltaics.
摘要翻译：硅纳米孔阵列被公开为用于各种装置如太阳能光伏的吸光结构。为了获得与标准300微米晶体硅晶片相同的最终效率，纳米孔阵列需要较少的硅质量。此外，计算表明，对于实际厚度，纳米孔阵列的效率优于纳米棒阵列。通过成熟的制造技术，纳米孔阵列具有高效太阳能光伏发电的巨大潜力。

8. 发明申请

WO2011066193A1 WATER DESALINATION USING DIRECTIONAL SOLVENT EXTRACTION 审中-公开
标题翻译：使用方向溶剂萃取的水脱盐
公开(公告)号：WO2011066193A1
公开(公告)日：2011-06-03
申请号：PCT/US2010/057448
申请日：2010-11-19
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , BAJPAYEE, Anurag , KRAEMER, Daniel , MUTO, Andrew , CHEN, Gang , LIENHARD, John , MIKIC, Borivoje
发明人： BAJPAYEE, Anurag , KRAEMER, Daniel , MUTO, Andrew , CHEN, Gang , LIENHARD, John , MIKIC, Borivoje
IPC分类号： C02F1/26 , C02F103/08 , C02F103/36
CPC分类号： C02F1/265 , C02F2103/08 , C02F2103/365
摘要： Substantially pure water is produced via desalination using a directional solvent that directionally dissolves water but does not dissolve salt. The directional solvent is heated to dissolve water from the salt solution into the directional solvent. The remaining highly concentrated salt water is removed, and the solution of directional solvent and water is cooled to precipitate substantially pure water out of the solution.
摘要翻译：通过使用定向溶解水但不溶解盐的定向溶剂通过脱盐来生产基本上纯净的水。加热定向溶剂以将水从盐溶液中溶解到定向溶剂中。除去剩余的高度浓缩的盐水，并将定向溶剂和水的溶液冷却，使基本上纯的水从溶液中沉淀出来。

9. 发明申请

WO2008140596A3 METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS 审中-公开
公开(公告)号：WO2008140596A3
公开(公告)日：2008-11-20
申请号：PCT/US2007/086291
申请日：2007-12-03
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) , TRUSTEES OF BOSTON COLLEGE , REN, Zhifeng , POUDEL, Bed , CHEN, Gang , LAN, Yucheng , WANG, Dezhi , HAO, Qing , DRESSELHAUS, Mildred , MA, Yi , YAN, Xiao , CHEN, Xiaoyuan , WANG, Xiaowei , JOSHI, Giri, Raj , YU, Bo
发明人： REN, Zhifeng , POUDEL, Bed , CHEN, Gang , LAN, Yucheng , WANG, Dezhi , HAO, Qing , DRESSELHAUS, Mildred , MA, Yi , YAN, Xiao , CHEN, Xiaoyuan , WANG, Xiaowei , JOSHI, Giri, Raj , YU, Bo
IPC分类号： H01L35/16 , H01L35/34 , H01L35/26
摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed In many instances, such materials include nano-sized domains (e g, nanocrystalhne), which are hypothesized to help increase the ZT value of the material (e g, by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries) The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e g, via direct current induced hot press) into a new bulk material Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped Various compositions and methods relating to aspects of nanostructured theromoelectπc materials (e g, modulation doping) are further disclosed.

10. 发明申请

WO2008063474A2 SOLAR THERMOELECTRIC CONVERSION 审中-公开
标题翻译：太阳能热电转换
公开(公告)号：WO2008063474A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/023776
申请日：2007-11-13
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , CHEN, Gang , CHEN, Xiaoyuan , DRESSELHAUS, Mildred , REN, Zhifeng
发明人： CHEN, Gang , CHEN, Xiaoyuan , DRESSELHAUS, Mildred , REN, Zhifeng
IPC分类号： H01L35/00 , H01L35/30
CPC分类号： H01L35/00 , F24S21/00 , F24S23/30 , F24S23/70 , H01L35/30 , Y02E10/40
摘要： Systems and methods utilizing solar-electrical generators are discussed. Solar- electrical generators are disclosed having a radiation-capture structure and one or more thermoelectric converters. Heat produced in a capture structure via impingement of solar radiation can maintain a portion of a thermoelectric converter at a high temperature, while the use of a low temperature at another portion allows electricity generation. Thus, unlike photovoltaic cells which are generally primarily concerned with optical radiation management, solar thermoelectrics converters are generally concerned with a variety of mechanisms for heat management. Generators can include any number of features including selective radiation surfaces, low emissivity surfaces, flat panel configurations, evacuated environments, and other concepts that can act to provide thermal concentration. Designs utilizing one or more optical concentrators are also disclosed.
摘要翻译：讨论了利用太阳能发电机的系统和方法。公开了具有辐射捕获结构和一个或多个热电转换器的太阳能发电机。通过太阳辐射的冲击在捕获结构中产生的热可以将热电转换器的一部分保持在高温，而在另一部分使用低温允许发电。因此，与通常主要涉及光辐射管理的光伏电池不同，太阳能热电转换器通常涉及各种用于热管理的机构。发电机可以包括任何数量的功能，包括选择性辐射表面，低辐射面，平板配置，抽真空环境以及其他可提供热集中作用的概念。还公开了利用一个或多个聚光器的设计。

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