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1. 发明申请

WO2008140596A3 METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS 审中-公开
公开(公告)号：WO2008140596A3
公开(公告)日：2008-11-20
申请号：PCT/US2007/086291
申请日：2007-12-03
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) , TRUSTEES OF BOSTON COLLEGE , REN, Zhifeng , POUDEL, Bed , CHEN, Gang , LAN, Yucheng , WANG, Dezhi , HAO, Qing , DRESSELHAUS, Mildred , MA, Yi , YAN, Xiao , CHEN, Xiaoyuan , WANG, Xiaowei , JOSHI, Giri, Raj , YU, Bo
发明人： REN, Zhifeng , POUDEL, Bed , CHEN, Gang , LAN, Yucheng , WANG, Dezhi , HAO, Qing , DRESSELHAUS, Mildred , MA, Yi , YAN, Xiao , CHEN, Xiaoyuan , WANG, Xiaowei , JOSHI, Giri, Raj , YU, Bo
IPC分类号： H01L35/16 , H01L35/34 , H01L35/26
摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed In many instances, such materials include nano-sized domains (e g, nanocrystalhne), which are hypothesized to help increase the ZT value of the material (e g, by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries) The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e g, via direct current induced hot press) into a new bulk material Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped Various compositions and methods relating to aspects of nanostructured theromoelectπc materials (e g, modulation doping) are further disclosed.

2. 发明申请

WO2008063474A2 SOLAR THERMOELECTRIC CONVERSION 审中-公开
标题翻译：太阳能热电转换
公开(公告)号：WO2008063474A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/023776
申请日：2007-11-13
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , CHEN, Gang , CHEN, Xiaoyuan , DRESSELHAUS, Mildred , REN, Zhifeng
发明人： CHEN, Gang , CHEN, Xiaoyuan , DRESSELHAUS, Mildred , REN, Zhifeng
IPC分类号： H01L35/00 , H01L35/30
CPC分类号： H01L35/00 , F24S21/00 , F24S23/30 , F24S23/70 , H01L35/30 , Y02E10/40
摘要： Systems and methods utilizing solar-electrical generators are discussed. Solar- electrical generators are disclosed having a radiation-capture structure and one or more thermoelectric converters. Heat produced in a capture structure via impingement of solar radiation can maintain a portion of a thermoelectric converter at a high temperature, while the use of a low temperature at another portion allows electricity generation. Thus, unlike photovoltaic cells which are generally primarily concerned with optical radiation management, solar thermoelectrics converters are generally concerned with a variety of mechanisms for heat management. Generators can include any number of features including selective radiation surfaces, low emissivity surfaces, flat panel configurations, evacuated environments, and other concepts that can act to provide thermal concentration. Designs utilizing one or more optical concentrators are also disclosed.
摘要翻译：讨论了利用太阳能发电机的系统和方法。公开了具有辐射捕获结构和一个或多个热电转换器的太阳能发电机。通过太阳辐射的冲击在捕获结构中产生的热可以将热电转换器的一部分保持在高温，而在另一部分使用低温允许发电。因此，与通常主要涉及光辐射管理的光伏电池不同，太阳能热电转换器通常涉及各种用于热管理的机构。发电机可以包括任何数量的功能，包括选择性辐射表面，低辐射面，平板配置，抽真空环境以及其他可提供热集中作用的概念。还公开了利用一个或多个聚光器的设计。

3. 发明申请

WO2007084174A2 METAL-DOPED SEMICONDUCTOR NANOPARTICLES AND METHODS OF SYNTHESIS THEREOF 审中-公开
标题翻译：金属掺杂半导体纳米粒子及其合成方法
公开(公告)号：WO2007084174A2
公开(公告)日：2007-07-26
申请号：PCT/US2006/017093
申请日：2006-05-03
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) , THE TRUSTEES OF BOSTON COLLEGE , REN, Zhifeng , CHEN, Gang , POUDEL, Bed , KUMAR, Shankar , WANG, Wenzhong , DRESSELHAUS, Mildred
发明人： REN, Zhifeng , CHEN, Gang , POUDEL, Bed , KUMAR, Shankar , WANG, Wenzhong , DRESSELHAUS, Mildred
CPC分类号： H01L35/26 , B82Y30/00 , C01B19/002 , C01B19/007 , C01P2002/52 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/30 , C01P2004/38 , C01P2004/62 , C01P2004/64 , C01P2006/40 , Y10S977/813
摘要： The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.
摘要翻译：本发明一般涉及掺杂有金属元素的二元或更高阶半导体纳米颗粒，以及掺入这种纳米颗粒的热电组合物。一方面，本发明提供一种包含多个纳米颗粒的热电组合物，每个纳米颗粒包括由IV族元素和第VI族元素形成的合金基质和分布在基质内的金属掺杂剂。

4. 发明申请

WO2007084173A2 METHODS FOR SYNTHESIS OF SEMICONDUCTOR NANOCRYSTALS AND THERMOELECTRIC COMPOSITIONS 审中-公开
标题翻译：合成半导体纳米晶和热电组合物的方法
公开(公告)号：WO2007084173A2
公开(公告)日：2007-07-26
申请号：PCT/US2006/016995
申请日：2006-05-03
申请人： MASAACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) , THE TRUSTEES OF BOSTON COLLEGE , REN, Zhifeng , CHEN, Gang , POUDEL, Bed , KUMAR, Shankar , WANG, Wenzhong , DRESSELHAUS, Mildred
发明人： REN, Zhifeng , CHEN, Gang , POUDEL, Bed , KUMAR, Shankar , WANG, Wenzhong , DRESSELHAUS, Mildred
IPC分类号： H01M4/58
CPC分类号： C01B19/007 , B82Y30/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/30 , C01P2004/38 , C01P2004/62 , C01P2004/64 , C04B35/547 , C04B35/632 , C04B35/63488 , C04B35/645 , C04B2235/32 , C04B2235/3201 , C04B2235/3281 , C04B2235/3291 , C04B2235/3293 , C04B2235/3296 , C04B2235/50 , C04B2235/5454 , C04B2235/549 , C04B2235/77 , C04B2235/781 , C04B2235/96 , C04B2235/9607 , H01M4/581 , Y10S977/773 , Y10S977/775 , Y10S977/813 , Y10S977/814
摘要： The present invention provides methods for synthesis of IV-VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20 0C to about 360 °C, for a duration sufficient for generating nanoparticles as binary alloys of the IV-VI elements.
摘要翻译：本发明提供合成IV-VI纳米结构的方法，以及由这种结构形成的热电组合物。一方面，该方法包括形成IV族试剂，VI族试剂和表面活性剂的溶液。可以将还原剂加入到溶液中，并且可以将所得溶液维持在升高的温度下，例如在约20℃至约360℃的范围内，持续足以产生作为 IV-VI元素。

5. 发明申请

WO2006137923A2 NANOCOMPOSITES WITH HIGH THERMOELECTRIC FIGURES OF MERIT 审中-公开
标题翻译：具有高温热电偶图的纳米复合材料
公开(公告)号：WO2006137923A2
公开(公告)日：2006-12-28
申请号：PCT/US2005/039362
申请日：2005-10-31
申请人： MASSACHUSETTS INSTITUTE OF TECHONOLOGY (MIT) , TRUSTEES OF BOSTON COLLEGE , CHEN, Gang , REN, Zhifeng , DRESSELHAUS, Mildred
发明人： CHEN, Gang , REN, Zhifeng , DRESSELHAUS, Mildred
IPC分类号： H01L35/16 , H01L35/22
CPC分类号： B29C43/36 , H01L35/16 , H01L35/22 , Y10S257/00 , Y10T428/2938
摘要： The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nanosized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite’s electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k B T, wherein k B is the Boltzman constant and T is an average temperature of said nanocomposite composition.
摘要翻译：本发明一般涉及显示增强的热电性质的纳米复合热电材料。纳米复合材料包括两种或多种组分，其中至少一种组分在复合材料内形成纳米尺寸结构。选择这些组分使得复合材料的热导率降低而基本上不会降低复合材料的导电性。合适的组分材料表现出类似的电子带结构。例如，在一个组分材料的导带或价带中的至少一个与组分之间的界面处的另一组分材料的相应带之间的带边缘间隙可以小于约5k B B， SUB> T，其中k B是Boltzman常数，T是所述纳米复合组合物的平均温度。

6. 发明申请

WO2014205378A1 FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 审中-公开
标题翻译：稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备
公开(公告)号：WO2014205378A1
公开(公告)日：2014-12-24
申请号：PCT/US2014/043461
申请日：2014-06-20
申请人： UNIVERSITY OF HOUSTON SYSTEM , JIE, Qing , REN, Zhifeng , CHEN, Gang , MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人： JIE, Qing , REN, Zhifeng , CHEN, Gang
IPC分类号： H01L35/12 , H01L35/34
CPC分类号： H01L35/34 , H01L35/08 , H01L35/14 , H01L35/20 , H01L35/22
摘要： Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi 2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi 2 . In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 µΩ•cm 2 .
摘要翻译：公开了用于制造电触头的n型和p型填充方钴矿热电腿的方法。将CoSi 2和掺杂剂的第一材料球磨以形成用n型方钴矿的第二粉末热机械加工的第一粉末，以形成设置在第一层和第三层之间的n型方钴矿层掺杂CoSi2。此外，将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一粉末，其用p型方钴矿层热机械加工以形成p型方钴矿层“第二层”设置在第一和第三层之间。在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的比接触电阻小于约10.0μΩ·cmgr·cm 2。

7. 发明申请

WO2012138979A2 THERMOELECTRIC MATERIALS AND METHODS FOR SYNTHESIS THEREOF 审中-公开
标题翻译：热电材料及其合成方法
公开(公告)号：WO2012138979A2
公开(公告)日：2012-10-11
申请号：PCT/US2012/032495
申请日：2012-04-06
申请人： THE TRUSTEES OF BOSTON COLLEGE , MASSACHUSETTS INSTITUTE OF TECHNOLOGY , REN, Zhifeng , LIU, Weishu , CHEN, Gang , CHEN, Shuo
发明人： REN, Zhifeng , LIU, Weishu , CHEN, Gang , CHEN, Shuo
IPC分类号： B22F5/12
CPC分类号： C22C12/00 , B22F1/0018 , B22F3/14 , B22F9/04 , B82Y30/00 , C22C30/00
摘要： Thermoelectric materials with improved thermoelectric properties and methods for synthesis of such thermoelectric materials are disclosed herein. In some embodiment, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more dopant materials and Bismuth Telluride based alloy materials; and consolidating the nanoparticles under pressure at a temperature greater than about 200 °C to form a doped Bismuth Telluride based alloy.
摘要翻译：本文公开了具有改善的热电性质的热电材料和用于合成这种热电材料的方法。在一些实施例中，一种制造热电材料的方法包括：从包含一种或多种掺杂剂材料和碲化铋基合金材料的原材料生成多个纳米颗粒; 以及在大于约200℃的温度下在压力下固结纳米颗粒以形成掺杂的碲化铋基合金。

8. 发明申请

WO2015047477A2 SYSTEMS AND METHODS FOR THE SYNTHESIS OF HIGH THERMOELECTRIC PERFORMANCE DOPED-SnTe MATERIALS 审中-公开
标题翻译：用于合成高热电性能掺杂SnTe材料的系统和方法
公开(公告)号：WO2015047477A2
公开(公告)日：2015-04-02
申请号：PCT/US2014/042765
申请日：2014-06-17
申请人： UNIVERSITY OF HOUSTON SYSTEM , MASSACHUSETTS INSTITUTE OF TECHNOLOGY , REN, Zhifeng , ZHANG, Qian , CHEN, Gang
发明人： REN, Zhifeng , ZHANG, Qian , CHEN, Gang
IPC分类号： H01L35/16 , H01L35/34
CPC分类号： H01L35/16 , H01L35/34
摘要： A thermoelectric composition comprising tin (Sn), tellurium (Te) and at least one dopant that comprises a peak dimensionless figure of merit ( ZT ) of 1.1 and a Seebeck coefficient of at least 50 µV/K and a method of manufacturing the thermoelectric composition. A plurality of components are disposed in a ball-milling vessel, wherein the plurality of components comprise tin (Sn), tellurium (Te), and at least one dopant such as indium (In). The components are subsequently mechanically and thermally processed, for example, by hot-pressing. In response to the mechanical-thermally processing, a thermoelectric composition is formed, wherein the thermoelectric composition comprises a dimensionless figure of merit ( ZT ) of the thermoelectric composition is at least 0.8, and wherein a Seebeck coefficient of the thermoelectric composition is at least 50 µV/K at any temperature.
摘要翻译：包含锡（Sn），碲（Te）和至少一种掺杂物的热电组合物，所述掺杂物包含1.1的峰值无量纲品质因数（ZT）和塞贝克系数至少50μV/ K的热电组合物和制造该热电组合物的方法。多个组件设置在球磨容器中，其中所述多个组件包含锡（Sn），碲（Te）和至少一种掺杂剂（例如铟（In））。随后例如通过热压对部件进行机械和热处理。响应于机械 - 热处理，形成热电组合物，其中热电组合物包含热电组合物的无量纲性能指数（ZT）为至少0.8，并且其中塞贝克系数该热电组合物在任何温度下都至少为50μV/ K。

9. 发明申请

WO2014204671A1 GRADIENT SiNO ANTI-REFLECTIVE LAYERS IN SOLAR SELECTIVE COATINGS 审中-公开
标题翻译：太阳能选择性涂层中的梯度SiNO抗反射层
公开(公告)号：WO2014204671A1
公开(公告)日：2014-12-24
申请号：PCT/US2014/041209
申请日：2014-06-06
申请人： UNIVERSITY OF HOUSTON SYSTEM , MASSACHUSETTS INSTITUTE OF TECHNOLOGY , REN, Zhifeng , CAO, Feng , SUN, Tianyi , CHEN, Gang
发明人： REN, Zhifeng , CAO, Feng , SUN, Tianyi , CHEN, Gang
IPC分类号： C23C30/00 , F24J2/46 , F24J2/48
CPC分类号： F24S70/20 , C23C14/027 , C23C14/0688 , C23C28/322 , C23C28/324 , C23C28/325 , C23C28/34 , C23C28/36 , F24S70/30 , Y02E10/40
摘要： A solar selective coating includes a substrate, a cermet layer having nanoparticles therein deposited on the substrate, and an anti-reflection layer deposited on the cermet layer. The cermet layer and the anti-reflection layer may each be formed of intermediate layers. A method for constructing a solar-selective coating is disclosed and includes preparing a substrate, depositing a cermet layer on the substrate, and depositing an anti-reflection layer on the cermet layer.
摘要翻译：太阳能选择性涂层包括基底，在基底上沉积有纳米颗粒的金属陶瓷层，以及沉积在金属陶瓷层上的抗反射层。金属陶瓷层和抗反射层各自可以由中间层形成。公开了一种构建太阳能选择性涂层的方法，包括制备衬底，在衬底上沉积金属陶瓷层，并在金属陶瓷层上沉积抗反射层。

10. 发明申请

WO2005101536A1 IMPROVING THERMOELECTRIC PROPERTIES BY HIGH TEMPERATURE ANNEALING 审中-公开
标题翻译：通过高温退火改善热电性能
公开(公告)号：WO2005101536A1
公开(公告)日：2005-10-27
申请号：PCT/US2005/011405
申请日：2005-04-06
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) , TRUSTEES OF BOSTON COLLEGE , REN, Zhifeng , CHEN, Gang , KUMAR, Shankar , LEE, Hohyun
发明人： REN, Zhifeng , CHEN, Gang , KUMAR, Shankar , LEE, Hohyun
IPC分类号： H01L35/14
CPC分类号： H01L35/22 , C22C1/005 , C22C11/00 , C22C12/00 , C22C28/00 , C22F1/00 , H01L35/16
摘要： The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.
摘要翻译：本发明通常提供通过对合金进行一个或多个高温退火步骤来改善合金的热电性质的方法，所述高温退火步骤在合金呈现混合的固相/液相的温度下进行，之后是冷却步骤。例如，在一个方面，本发明的这种方法可以包括使合金样品经受足够升高的温度以引起至少一些晶粒的部分熔融。然后可以将样品冷却以固化熔融的颗粒部分，使得每个固化的颗粒部分显示平均化学组成，其特征在于形成合金的元素的相对浓度，不同于其余颗粒的元素的相对浓度。

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