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1. 发明申请

WO2005112139A2 SURFACE PLASMON COUPLED NONEQUILIBRIUM THERMOELECTRIC DEVICES 审中-公开
标题翻译：表面等离子体耦合非平衡热电装置
公开(公告)号：WO2005112139A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/015313
申请日：2005-05-03
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY , CHEN, Gang , YANG, Ronggui , NARAYANASWAMY, Arvind
发明人： CHEN, Gang , YANG, Ronggui , NARAYANASWAMY, Arvind
IPC分类号： H01L35/00
CPC分类号： H01L35/00 , H01J45/00 , H01L35/30
摘要： A surface-plasmon-coupled thermoelectric apparatus includes a first surfaceplasmon substrate and a thermoelectric substrate electrically coupled to a plurality of electrodes. The substrates are electrically isolated from each other, and a first face of the thermoelectric substrate opposes a first face of the first surface-plasmon substrate to define a phonon insulating gap. A method of transferring thermal energy across the phonon insulating gap includes creating a first surface-plasmon polariton at the first surface-plasmon substrate when the first surface-plasmon substrate is coupled to a first thermal reservoir. Also included is creating a nonequilibrium state between the electron temperature and the phonon temperature at a first face of the thermoelectric substrate, when a second face of the thermoelectric substrate is coupled to a second thermal reservoir. Also included is coupling the first surface plasmon polariton with electrons in the thermoelectric substrate across the phonon insulating gap, thereby transferring thermal energy between the thermal reservoirs through the phonon insulating gap.
摘要翻译：表面等离子体耦合热电装置包括电耦合到多个电极的第一表面积衬底和热电衬底。基板彼此电隔离，并且热电基板的第一面与第一表面等离子体激元基板的第一面相对以限定声子绝缘间隙。传输热能穿过声子绝缘间隙的方法包括当第一表面等离子体激元基板耦合到第一热存储器时，在第一表面等离子体激元基板处产生第一表面等离子体激元。还包括当热电基板的第二面耦合到第二热存储器时，在热电基板的第一面处在电子温度和声子温度之间产生非平衡状态。还包括将第一表面等离子体激元与热电基片中的电子耦合穿过声子绝缘间隙，从而通过声子绝缘间隙在热存储器之间传递热能。

2. 发明申请

WO2005112139A3 SURFACE PLASMON COUPLED NONEQUILIBRIUM THERMOELECTRIC DEVICES 审中-公开
标题翻译：表面等离子体耦合非平衡热电装置
公开(公告)号：WO2005112139A3
公开(公告)日：2006-05-18
申请号：PCT/US2005015313
申请日：2005-05-03
申请人： MASSACHUSETTS INST TECHNOLOGY , CHEN GANG , YANG RONGGUI , NARAYANASWAMY ARVIND
发明人： CHEN GANG , YANG RONGGUI , NARAYANASWAMY ARVIND
IPC分类号： H01L35/00 , H01J45/00 , H01L35/16 , H01L35/22 , H01L35/28 , H01L35/30 , H01L37/00
CPC分类号： H01L35/00 , H01J45/00 , H01L35/30
摘要： A surface-plasmon-coupled thermoelectric apparatus includes a first surfaceplasmon substrate and a thermoelectric substrate electrically coupled to a plurality of electrodes. The substrates are electrically isolated from each other, and a first face of the thermoelectric substrate opposes a first face of the first surface-plasmon substrate to define a phonon insulating gap. A method of transferring thermal energy across the phonon insulating gap includes creating a first surface-plasmon polariton at the first surface-plasmon substrate when the first surface-plasmon substrate is coupled to a first thermal reservoir. Also included is creating a nonequilibrium state between the electron temperature and the phonon temperature at a first face of the thermoelectric substrate, when a second face of the thermoelectric substrate is coupled to a second thermal reservoir. Also included is coupling the first surface plasmon polariton with electrons in the thermoelectric substrate across the phonon insulating gap, thereby transferring thermal energy between the thermal reservoirs through the phonon insulating gap.
摘要翻译：表面等离子体耦合热电装置包括电耦合到多个电极的第一表面积衬底和热电衬底。基板彼此电隔离，并且热电基板的第一面与第一表面等离子体激元基板的第一面相对以限定声子绝缘间隙。传输热能穿过声子绝缘间隙的方法包括当第一表面等离子体激元基板耦合到第一热存储器时，在第一表面等离子体激元基板处产生第一表面等离子体激元。还包括当热电基板的第二面耦合到第二热存储器时，在热电基板的第一面处在电子温度和声子温度之间产生非平衡状态。还包括将第一表面等离子体激元与热电基片中的电子耦合穿过声子绝缘间隙，从而通过声子绝缘间隙在热存储器之间传递热能。

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