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    • 3. 发明授权
    • Determining design coordinates for wafer defects
    • 确定晶圆缺陷的设计坐标
    • US09087367B2
    • 2015-07-21
    • US13601891
    • 2012-08-31
    • Ellis ChangMichael J. Van RietAllen ParkKhurram ZafarSantosh Bhattacharyya
    • Ellis ChangMichael J. Van RietAllen ParkKhurram ZafarSantosh Bhattacharyya
    • G06K9/62G06T7/00
    • G06T7/001G06T7/74G06T2207/30148
    • Methods and systems for determining design coordinates for defects detected on a wafer are provided. One method includes aligning a design for a wafer to defect review tool images for defects detected in multiple swaths on the wafer by an inspection tool, determining a position of each of the defects in design coordinates based on results of the aligning, separately determining a defect position offset for each of the multiple swaths based on the swath in which each of the defects was detected (swath correction factor), the design coordinates for each of the defects, and a position for each of the defects determined by the inspection tool, and determining design coordinates for the other defects detected in the multiple swaths by the inspection tool by applying the appropriate swath correction factor to those defects.
    • 提供了用于确定在晶片上检测到的缺陷的设计坐标的方法和系统。 一种方法包括对准晶片的设计以通过检查工具对晶片上的多个条带中检测到的缺陷来检查工具图像,基于对准的结果确定每个缺陷在设计坐标中的位置,分别确定缺陷 基于检测到每个缺陷的条带(条纹校正因子),每个缺陷的设计坐标以及由检查工具确定的每个缺陷的位置,针对每个多个条带的位置偏移,以及 通过对这些缺陷应用适当的条纹校正因子来确定检测工具在多个条中检测到的其他缺陷的设计坐标。