专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06330136B1 Magnetic read sensor with SDT tri-layer and method for making same 有权
标题翻译：具有SDT三层磁读取传感器及其制作方法
公开(公告)号：US06330136B1
公开(公告)日：2001-12-11
申请号：US09173472
申请日：1998-10-14
申请人： Lien-Chang Wang , Chih-Huang Lai , Tai Min , Zhupei Shi , Billy W. Crue, Jr.
发明人： Lien-Chang Wang , Chih-Huang Lai , Tai Min , Zhupei Shi , Billy W. Crue, Jr.
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： An Spin Dependent Tumelina SDT read sensor includes a first ferromagnetic (FM) layer and a second FM layer separated by an insulating layer. The first FM layer and second FM layer are substantially electrically isolated from each other. Specifically, the sidewalls of the SDT read sensor are substantially free of electrical paths between the first FM layer and the second FM layer. Also, a surface of the second FM layer that is substantially parallel to the air bearing surface, is recessed from the air bearing surface. A method for forming an SDT read sensor includes depositing a first FM material layer, depositing an intermediate insulation material layer over the first FM material layer, and then depositing a second FM material layer over the intermediate insulation material layer. The second FM material layer and the intermediate insulation material layer are etched, with the etching being stopped before the etching etches the first FM material layer.
摘要翻译：旋转依赖Tumelina SDT读取传感器包括由绝缘层分隔的第一铁磁（FM）层和第二FM层。第一FM层和第二FM层基本上彼此电隔离。具体地说，SDT读取传感器的侧壁基本上没有第一FM层和第二FM层之间的电路径。此外，基本上平行于空气轴承表面的第二FM层的表面从空气轴承表面凹陷。一种用于形成SDT读取传感器的方法包括沉积第一FM材料层，在第一FM材料层上沉积中间绝缘材料层，然后在中间绝缘材料层上沉积第二个FM材料层。蚀刻第二FM材料层和中间绝缘材料层，在刻蚀蚀刻第一FM材料层之前蚀刻停止。

2. 发明授权

US06633464B2 Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system 失效
标题翻译：具有Fe / FeSi / Fe体系的合成反铁磁钉扎层
公开(公告)号：US06633464B2
公开(公告)日：2003-10-14
申请号：US09209060
申请日：1998-12-09
申请人： Chih-Huang Lai , Zhupei Shi , Hua-Ching Tong , Robert E. Rottmayer , Charles W. Miller
发明人： Chih-Huang Lai , Zhupei Shi , Hua-Ching Tong , Robert E. Rottmayer , Charles W. Miller
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044
摘要： A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in a first direction, while a second Fe layer of the synthetic AFM layer has a magnetization substantially in a second direction that is substantially antiparallel to the first direction. The magnetoresistive device can be a spin valve in which a first surface of the synthetic AFM layer is adjacent to a pinning layer, and a second surface of the synthetic AFM layer is adjacent to a spacer layer. Further, the spin valve includes a free layer that overlies the spacer, thereby being separated from the synthetic AFM layer by the spacer. The pinning layer, synthetic AFM layer, spacer, and free layer can be bounded by a first shield and a second shield to provide magnetic shielding of the spin valve sensor.
摘要翻译：磁阻（MR）装置包括具有Fe / FeSi / Fe构造的合成反铁磁（AFM）层。合成AFM层的第一Fe层具有基本上在第一方向上的磁化，而合成AFM层的第二Fe层具有基本上在基本上与第一方向反平行的第二方向上的磁化。磁阻器件可以是自旋阀，其中合成AFM层的第一表面与钉扎层相邻，并且合成AFM层的第二表面与间隔层相邻。此外，自旋阀包括覆盖间隔物的自由层，从而通过间隔物与合成AFM层分离。钉扎层，合成AFM层，隔离层和自由层可以由第一屏蔽层和第二屏蔽层限定，以提供自旋阀传感器的磁屏蔽。

3. 发明授权

US06185077B2 Spin valve sensor with antiferromagnetic and magnetostatically coupled pinning structure 有权
标题翻译：具有反铁磁和静磁耦合钉扎结构的旋转阀传感器
公开(公告)号：US06185077B2
公开(公告)日：2001-02-06
申请号：US09227323
申请日：1999-01-06
申请人： Hua-Ching Tong , Tai Min , Jian-Gang Zhu , Chih-Huang Lai
发明人： Hua-Ching Tong , Tai Min , Jian-Gang Zhu , Chih-Huang Lai
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A stable pinned structure for a magnetoresistive sensor includes a pair of ferromagnetic layers sandwiched about an antiferromagnetic layer, the ferromagnetic layers having substantially opposite magnetic directions magnetostatically coupled and pinned by the antiferromagnetic layer. A free layer of ferromagnetic material has a magnetic direction that can rotate in the presence of an applied magnetic field so that the field can be sensed. A second free layer may be provided, such that the free layers are sandwiched about the pinned structure, with the sensor configured for amplifying signals and minimizing common mode noise.
摘要翻译：用于磁阻传感器的稳定的钉扎结构包括夹在反铁磁层之间的一对铁磁层，铁磁层具有基本相反的磁方向磁阻耦合并由反铁磁层固定。铁磁材料的自由层具有可以在施加的磁场的存在下旋转的磁方向，从而可以感测场。可以提供第二自由层，使得自由层围绕固定结构夹持，传感器被配置用于放大信号并最小化共模噪声。

4. 发明申请

US20120068279A1 DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE 有权
标题翻译：域壁辅助转子扭矩传递磁阻随机访问存储器结构
公开(公告)号：US20120068279A1
公开(公告)日：2012-03-22
申请号：US12884351
申请日：2010-09-17
申请人： Chih-Huang Lai , Sheng-Huang Huang , Kuo-Feng Huang , Ming-Te Liu , Chun-Jung Lin , Ya-Chen Kao , Wen-Cheng Chen
发明人： Chih-Huang Lai , Sheng-Huang Huang , Kuo-Feng Huang , Ming-Te Liu , Chun-Jung Lin , Ya-Chen Kao , Wen-Cheng Chen
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1657 , G11C11/1675 , G11C19/0808 , H01L27/228 , H01L43/08
摘要： A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.
摘要翻译：半导体存储器件包括磁性固定并位于衬底的第一区域内的第一铁磁层; 第二铁磁层近似第一铁磁层; 以及介于所述第一铁磁层与所述第二铁磁层的所述第一部分之间的阻挡层。第二铁磁层包括无磁性的第一部分，并且位于第一区域内; 第二部分，磁性地固定在第一方向上并且位于所述基板的第二区域内，所述第二区域从所述第一侧面接触所述第一区域; 以及第三部分，其磁性地固定到第二方向并且位于所述基板的第三区域内，所述第三区域从所述第二侧面接触所述第一区域。

5. 发明授权

US07466585B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US07466585B2
公开(公告)日：2008-12-16
申请号：US11380777
申请日：2006-04-28
申请人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
发明人： Chih-Huo Wu , Chih-Huang Lai , Yu-Jen Wang , Denny Tang
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C29/50 , G11C2029/5002
摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.
摘要翻译：一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。当施加加热电流时，字线可操作以加热磁性薄膜存储元件。将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。薄膜元件的磁状态可以根据霍尔效应的原理来确定。

6. 发明授权

US07312506B2 Memory cell structure 有权
标题翻译：存储单元结构
公开(公告)号：US07312506B2
公开(公告)日：2007-12-25
申请号：US11093652
申请日：2005-03-30
申请人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Chin Lin
发明人： Yu-Jen Wang , Chih-Huang Lai , Denny Tang , Wen Chin Lin
IPC分类号： H01L29/82
CPC分类号： G11C11/16
摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.
摘要翻译：存储单元结构。第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

7. 发明申请

US20070247756A1 Perpendicular magnetic recording medium 失效
标题翻译：垂直磁记录介质
公开(公告)号：US20070247756A1
公开(公告)日：2007-10-25
申请号：US11590641
申请日：2006-10-30
申请人： Chih-Huang Lai , David Vokoun , Yu-Yi Liao , Meng-Shian Lin
发明人： Chih-Huang Lai , David Vokoun , Yu-Yi Liao , Meng-Shian Lin
IPC分类号： G11B5/74
CPC分类号： G11B5/732 , G11B5/667 , G11B5/7325
摘要： A perpendicular magnetic recording medium includes: a substrate; a soft magnetic film formed on the substrate; a non-magnetic film including an amorphous interlayer formed on the soft magnetic film and made from a metallic material selected from terbium, gadolinium, dysprosium, tantalum, hafnium, and combinations thereof, a buffer layer formed on the amorphous interlayer and having a face-centered cubic structure, and a seed layer formed on the buffer layer and having a hexagonal crystal structure; and a granular magnetic recording film formed on the seed layer.
摘要翻译：垂直磁记录介质包括：基板; 形成在基板上的软磁性膜; 一种非磁性膜，它包括形成在软磁膜上并由选自铽，钆，镝，钽，铪及其组合的金属材料制成的非晶中间层，形成在非晶中间层上的缓冲层，中心立方结构，以及形成在缓冲层上并具有六方晶体结构的种子层; 以及形成在种子层上的粒状磁记录膜。

8. 发明申请

US20130029451A1 METHOD FOR MAKING A SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20130029451A1
公开(公告)日：2013-01-31
申请号：US13355822
申请日：2012-01-23
申请人： Yu-Lun Chueh , Chin-Hung Liu , Chih-Huang Lai
发明人： Yu-Lun Chueh , Chin-Hung Liu , Chih-Huang Lai
IPC分类号： H01L31/0272 , H01L31/0264
CPC分类号： H01L31/0322 , H01L31/02363 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method for making a solar cell includes: (a) forming over a substrate a photoelectric transformation layer that is made of a chalcopyrite-based photovoltaic material; (b) performing an ion milling treatment, in which ions are injected to an upper surface of the photoelectric transformation layer at an ion incident angle with respect to the upper surface to partially etch the photoelectric transformation layer, so that the photoelectric transformation layer is formed with a plurality of nano-pillar structures, the ion incident angle ranging from 0° to 90°; and (c) forming an electrode unit to transmit electricity from the photoelectric transformation layer.
摘要翻译：制造太阳能电池的方法包括：（a）在基板上形成由基于黄铜矿的光伏材料制成的光电转换层; （b）进行离子研磨处理，其中离子以相对于上表面的离子入射角注入光电转换层的上表面以部分蚀刻光电转换层，从而形成光电转换层具有多个纳米柱结构，离子入射角为0°至90°; 和（c）形成电极单元以从光电转换层传输电能。

9. 发明申请

US20110220250A1 METHOD FOR ORDERING A DISORDERED ALLOY AND MAGNETIC MATERIAL MADE THEREBY 审中-公开
标题翻译：用于排列不合格合金和磁性材料的方法
公开(公告)号：US20110220250A1
公开(公告)日：2011-09-15
申请号：US12949215
申请日：2010-11-18
申请人： Chih-Huang Lai , Wei-Chih Wen
发明人： Chih-Huang Lai , Wei-Chih Wen
IPC分类号： H01F1/047 , H01F1/04
CPC分类号： H01F10/14 , H01F10/123 , H01F10/265
摘要： A method for ordering a disordered alloy includes: (a) forming a layer of a first alloy on a substrate, the first alloy being composed of a first metal and a second metal, and having a meta-stable phase of a face-centered cubic (FCC) crystal structure; (b) forming a layer of a third metal on the layer of the first alloy to form a layer unit including the layer of the first alloy and the layer of the third metal; and (c) annealing the layer unit to cause interdiffusion of atoms of the first and third metals between the layer of the first alloy and the layer of the third metal so as to form an ordered second alloy composed of the second and third metals. The first metal is insoluble in the second alloy composed of the second and third metals, and has a diffusion constant greater than those of the second and third metals.
摘要翻译：排序无序合金的方法包括：（a）在基板上形成第一合金层，第一合金由第一金属和第二金属组成，并且具有面心立方的元稳定相（FCC）晶体结构; （b）在所述第一合金层上形成第三金属层以形成包括所述第一合金层和所述第三金属层的层单元; 和（c）对层单元进行退火以使第一和第三金属的原子在第一合金的层和第三金属层之间的相互扩散，从而形成由第二和第三金属组成的有序的第二合金。第一金属不溶于由第二和第三金属组成的第二合金，并且其扩散常数大于第二和第三金属的扩散常数。

10. 发明授权

US07443638B2 Magnetoresistive structures and fabrication methods 有权
标题翻译：磁阻结构和制造方法
公开(公告)号：US07443638B2
公开(公告)日：2008-10-28
申请号：US10907974
申请日：2005-04-22
申请人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
发明人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , G11B2005/3996
摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.
摘要翻译：这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式