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    • 3. 发明申请
    • METHODS FOR STABILIZING CONTACT SURFACES OF ELECTROSTATIC CHUCKS
    • 稳定静电卡接触表面的方法
    • WO2012017378A2
    • 2012-02-09
    • PCT/IB2011/053417
    • 2011-08-01
    • LAM RESEARCH CORPORATIONLAM RESEARCH AGKIMBALL, ChrisSTEVENSON, TomMURAOKA, Peter
    • KIMBALL, ChrisSTEVENSON, TomMURAOKA, Peter
    • H01L21/683H01L21/687B23Q3/15H02N13/00
    • B08B7/0064B08B1/00H01L21/6831
    • Methods for stabilizing a ceramic contact surface of an electrostatic chuck, wherein the electrostatic chuck can be disposed within a reaction chamber of a semiconductor wafer processing assembly including a radio frequency source and a coolant gas supply are described herein. The method may include: clamping electrostatically a conditioning wafer to the ceramic contact surface of the electrostatic chuck; and cycling an output power of the radio frequency source and an output pressure of the coolant gas supply for multiple hot/cold cycles. Each of the hot/cold cycles includes a hot abrasion state and a cold abrasion state. At the hot abrasion state, the output power of the radio frequency source is relatively high and the output pressure of the coolant gas supply is relatively low to yield a relatively hot conditioning wafer. At the cold abrasion state, the output power of the radio frequency source is relatively low and the output pressure of the coolant gas supply is relatively high to yield a relatively cool conditioning wafer.
    • 本文描述了用于稳定静电吸盘的陶瓷接触表面的方法,其中静电吸盘可以设置在包括射频源和冷却剂气体供应源的半导体晶片处理组件的反应室内 。 该方法可以包括:将调节晶片静电夹持到静电吸盘的陶瓷接触表面; 以及循环所述射频源的输出功率和所述冷却剂气体供应的输出压力以用于多个热/冷循环。 每个热/冷循环包括热磨损状态和冷磨损状态。 在热磨损状态下,射频源的输出功率相对较高并且冷却剂气体供应的输出压力相对较低以产生相对热的调节晶片。 在冷磨损状态下,射频源的输出功率相对较低,并且冷却剂气体供应的输出压力相对较高,以产生相对较冷的调节晶片。
    • 5. 发明申请
    • FILM ADHESIVE FOR SEMICONDUCTOR VACUUM PROCESSING APPARATUS
    • 半导体真空处理装置的薄膜粘合剂
    • WO2009078923A2
    • 2009-06-25
    • PCT/US2008/013466
    • 2008-12-18
    • LAM RESEARCH CORPORATIONLARSON, Dean JaySTEVENSON, TomWANG, Victor
    • LARSON, Dean JaySTEVENSON, TomWANG, Victor
    • H01L21/67069B32B37/12H01L21/67103H01L21/68757Y10T156/10Y10T156/1062Y10T428/31504
    • A bonded assembly to reduce particle contamination in a semiconductor vacuum chamber such as a plasma processing apparatus is provided, including an elastomeric sheet adhesive bond between mating surfaces of a component and a support member to accommodate thermal stresses. The elastomeric sheet comprises a silicone adhesive to withstand a high shear strain of =800% at a temperature range between room temperature and 300°C such as heat curable high molecular weight dimethyl silicone with optional fillers. The sheet form has bond thickness control for parallelism of bonded surfaces. The sheet adhesive may be cut into pre-form shapes to conform to regularly or irregularly shaped features, maximize surface contact area with mating parts, and can be installed into cavities. Installation can be manually, manually with installation tooling, or with automated machinery. Composite layers of sheet adhesive having different physical properties can be laminated or coplanar.
    • 提供了一种减少诸如等离子体处理设备的半导体真空室中的粒子污染的结合组件,其包括在部件和支撑构件的配合表面之间的弹性体片粘合剂结合以适应热应力。 该弹性体片材包含有机硅粘合剂以在室温和300℃之间的温度范围内承受800%的高剪切应变,例如具有任选填料的可热固化高分子量二甲基硅氧烷。 片材形式具有粘合厚度控制,用于粘合表面的平行度。 可以将片状粘合剂切割成预成型形状以符合规则或不规则形状的特征,使与配合部件的表面接触面积最大化,并且可以将其安装到腔体中。 可以手动安装,也可以使用安装工具手动安装,也可以使用自动化机械。 具有不同物理特性的片状粘合剂复合层可以层压或共面。