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1. 发明公开

EP2484185A2 UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 审中-公开
标题翻译：统一限制环装置及其方法
公开(公告)号：EP2484185A2
公开(公告)日：2012-08-08
申请号：EP10819603.1
申请日：2010-09-27
申请人： LAM Research Corporation
发明人： DHINDSA, Rajinder , KALYANARAMAN, Rajaramanan , MANI, Sathyanarayanan , BHATTACHARYYA, Guatam
IPC分类号： H05H1/24 , H05H1/34
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32477 , H01J37/32495 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/32834 , H01J2237/334
摘要： An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.

2. 发明授权

EP1200981B1 GAS DISTRIBUTION APPARATUS FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：配气装置半导体加工
公开(公告)号：EP1200981B1
公开(公告)日：2007-09-05
申请号：EP00941377.4
申请日：2000-06-12
申请人： LAM RESEARCH CORPORATION
发明人： DHINDSA, Rajinder , HAO, Fangli , LENZ, Eric
IPC分类号： H01J37/32 , C23C16/44
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , H01J37/3244
摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate (20) and a showerhead (22) which are secured together to define a gas distribution chamber (24) therebetween. A baffle assembly (26) including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply (40) supplying process gas to a central portion (42) of the baffle chamber and a second gas supply (44) supplying a second process gas to a peripheral region (46) of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply.

3. 发明公开

EP1769101A2 APPARATUS INCLUDING GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RADIO FREQUENCY (RF) POWER FOR PLASMA PROCESSING 审中-公开
标题翻译：与用于等离子体处理过程气体的气体分配传入神经元和高频用功率器件
公开(公告)号：EP1769101A2
公开(公告)日：2007-04-04
申请号：EP05732428.7
申请日：2005-04-11
申请人： LAM RESEARCH CORPORATION
发明人： DHINDSA, Rajinder , LENZ, Eric
IPC分类号： C23F1/00
CPC分类号： H01J21/36 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32724 , H01L21/306
摘要： A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

4. 发明公开

EP1741128A2 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 有权
标题翻译：具有快速GASUMSCHALTFÄHIGKEITEN气体分布系统
公开(公告)号：EP1741128A2
公开(公告)日：2007-01-10
申请号：EP05738420.8
申请日：2005-04-22
申请人： LAM RESEARCH CORPORATION
发明人： HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
IPC分类号： H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

5. 发明公开

EP1661171A2 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
标题翻译： MEHRFREQUENZ-PLASMAÄTZREAKTOR
公开(公告)号：EP1661171A2
公开(公告)日：2006-05-31
申请号：EP04781695.4
申请日：2004-08-20
申请人： LAM RESEARCH CORPORATION
发明人： DHINDSA, Rajinder , SADJADI, Reza, S., M. , KOZAKEVICH, Felix , TRUSSELL, Dave , LI, Lumin , LENZ, Eric , RUSU, Camelia , SRINIVASAN, Mukund , EPPLER, Aaron , TIETZ, Jim , MARKS, Jeffrey
IPC分类号： H01L21/311
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece (18) is processed with a plasma (8) in a vacuum plasma processing chamber (10) by exciting the plasma at several frequencies (51, 52, 54, 56, 58), such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes top central (14, 36, 36a) and bottom electrodes (13, 16) and a peripheral top (42) and/or bottom electrode (34) arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies. Controller 24 is employed to direct parameter control of various motors (M), valves (V), frequencies (58), power (59), temperature control means (25, 45) and set points (50).

6. 发明公开

EP1200981A1 GAS DISTRIBUTION APPARATUS FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：配气装置半导体加工
公开(公告)号：EP1200981A1
公开(公告)日：2002-05-02
申请号：EP00941377.4
申请日：2000-06-12
申请人： LAM RESEARCH CORPORATION
发明人： DHINDSA, Rajinder , HAO, Fangli , LENZ, Eric
IPC分类号： H01J37/32 , C23C16/44
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , H01J37/3244
摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate (20) and a showerhead (22) which are secured together to define a gas distribution chamber (24) therebetween. A baffle assembly (26) including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply (40) supplying process gas to a central portion (42) of the baffle chamber and a second gas supply (44) supplying a second process gas to a peripheral region (46) of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply.

7. 发明申请

WO2013128361A1 HYBRID PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：混合等离子体处理系统
公开(公告)号：WO2013128361A1
公开(公告)日：2013-09-06
申请号：PCT/IB2013/051506
申请日：2013-02-25
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , DHINDSA, Rajinder
发明人： DHINDSA, Rajinder
IPC分类号： H01L23/60 , H01L23/34 , H01L21/3065
CPC分类号： H01J37/3255 , H01J37/321 , H01J37/32568
摘要： A hybrid plasma processing system and methods for manufacturing and operating same are disclosed. The hybrid plasma processing system includes an RF -powered lower electrode for supporting the substrate during processing and a hybrid upper electrode disposed in a spaced-apart relationship above the lower electrode. The hybrid upper electrode may be thermally controlled and includes a first plate formed of a first material having a first electrical resistivity, a conductive grounded plate having therein a plurality of radial slots and disposed above the first plate. The conductive plate is formed of a second material having a second electrical resistivity different from the first electrical resistivity. The hybrid upper electrode also includes an RF -powered inductive coil disposed above the conductive ground plate.
摘要翻译：公开了一种混合等离子体处理系统及其制造和操作方法。混合等离子体处理系统包括用于在处理期间支撑衬底的RF供电下电极和在下电极上方以间隔关系设置的混合上电极。混合上电极可以是热控制的，并且包括由具有第一电阻率的第一材料形成的第一板，其中具有多个径向槽并且设置在第一板上方的导电接地板。导电板由具有不同于第一电阻率的第二电阻率的第二材料形成。混合上电极还包括布置在导电接地板上方的RF施力感应线圈。

8. 发明申请

WO2013081843A1 GAS FEED INSERT IN A PLASMA PROCESSING CHAMBER AND METHODS THEREFOR 审中-公开
标题翻译：等离子体加工室中的气体进料插入件及其方法
公开(公告)号：WO2013081843A1
公开(公告)日：2013-06-06
申请号：PCT/US2012/065212
申请日：2012-11-15
申请人： LAM RESEARCH CORPORATION
发明人： KELLOGG, Michael C. , MARAKHTANOV, Alexei , DHINDSA, Rajinder
IPC分类号： C23F1/00
CPC分类号： H01J37/3244 , Y10T29/49002
摘要： A gas feed insert configured to be disposed in a passage through an electrode assembly comprising a first insert end having therein a first bore aligned parallel with a linear axis of the gas feed insert. The gas feed insert further includes a second insert end opposite the first insert end, the second insert end having therein a second bore aligned parallel with the linear axis of the gas feed insert and a bore-to-bore communication channel in gas flow communication with the first bore and the second bore. The bore-to-bore communication channel is formed in an outer surface of the gas feed insert so as to prevent a line-of-sight when a gas flows from the first insert end through the bore-to-bore communication to the second insert end.
摘要翻译：气体供给插入件，其构造成设置在通过电极组件的通道中，该电极组件包括具有与气体进料插入件的线性轴线平行排列的第一孔的第一插入端。气体进料插入件还包括与第一插入端相对的第二插入端，第二插入端具有其中与气体进料插入件的线性轴线平行排列的第二孔，以及与气体流动连通的孔对孔连通通道第一个孔和第二个孔。孔对孔连通通道形成在气体供给插入件的外表面中，以便当气体从第一插入端通过孔到孔连通流动到第二插入件时防止视线结束。

9. 发明申请

WO2013070472A2 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：WO2013070472A2
公开(公告)日：2013-05-16
申请号：PCT/US2012/062867
申请日：2012-10-31
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY III, Andrew, D.
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY III, Andrew, D.
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

10. 发明申请

WO2011026126A3 A MULTI-PERIPHERAL RING ARRANGEMENT FOR PERFORMING PLASMA CONFINEMENT 审中-公开
公开(公告)号：WO2011026126A3
公开(公告)日：2011-03-03
申请号：PCT/US2010/047373
申请日：2010-08-31
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , KOSHISHI, Akira , MARAKHTANOV, Alexei
发明人： DHINDSA, Rajinder , KOSHISHI, Akira , MARAKHTANOV, Alexei
IPC分类号： H05H1/46 , H01L21/3065 , C23C16/50
摘要： An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume.

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