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1. 发明申请

WO2012039744A2 PLASMA CONFINEMENT RING ASSEMBLY FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体处理室的等离子体约束环组件
公开(公告)号：WO2012039744A2
公开(公告)日：2012-03-29
申请号：PCT/US2011/001501
申请日：2011-08-25
申请人： LAM RESEARCH CORPORATION , DE LA LLERA, Anthony , CARMAN, David , TAYLOR, Travis, R. , ULLAL, Saurabh, J. , SINGH, Harmeet
发明人： DE LA LLERA, Anthony , CARMAN, David , TAYLOR, Travis, R. , ULLAL, Saurabh, J. , SINGH, Harmeet
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片支撑在下电极组件上并且将处理气体引入该室由上部喷头电极组件组成。该组件包括上部环，下部环，衣架，衣架帽，隔套和垫圈。当调节上下电极之间的间隙时，垫圈与下电极组件接触时，下环由吊架支撑并可朝上环移动。衣架帽与衣架的上端接合并且装配在上环中的衣架孔的上部中。隔离套筒围绕吊架的下部并装配在吊架孔的下部内。垫圈放在衣架的扩大头部和下部环的下表面之间。隔离套的尺寸设计为避免在提升下环期间与悬挂孔的内表面摩擦。

2. 发明申请

WO2010042908A2 SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK 审中-公开
标题翻译：用于测试静电卡盘的系统和方法
公开(公告)号：WO2010042908A2
公开(公告)日：2010-04-15
申请号：PCT/US2009060290
申请日：2009-10-10
申请人： LAM RES CORP , SHIH HONG , ULLAL SAURABH , HUANG TUOCHUAN , FANG YAN , MCCHESNEY JON
发明人： SHIH HONG , ULLAL SAURABH , HUANG TUOCHUAN , FANG YAN , MCCHESNEY JON
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： H01L21/6833
摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.
摘要翻译：本发明提供了用于预测静电卡盘（ESC）的令人满意的性能的可靠的非侵入式电测试方法。根据本发明的一个方面，在频带上测量ESC的参数，例如阻抗，以产生参数功能。该参数功能可用于建立频带内参数的预定可接受极限。

3. 发明申请

WO2008063324A2 COMPONENTS FOR A PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备的组件
公开(公告)号：WO2008063324A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/022027
申请日：2007-10-16
申请人： LAM RESEARCH CORPORATION , DE LA LLERA, Anthony , ULLAL, Saurabh, J.
发明人： DE LA LLERA, Anthony , ULLAL, Saurabh, J.
IPC分类号： H05H1/34
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components for a plasma processing apparatus are provided, including fastener members adapted to accommodate the stresses generated during thermal cycling. The fasteners include deflectable spacers to accommodate forces generated by the difference in thermal expansion while minimizing generation of additional particulate contamination.
摘要翻译：提供了一种用于等离子体处理装置的部件，包括适于容纳热循环期间产生的应力的紧固件部件。紧固件包括可偏转间隔件，以适应由热膨胀差产生的力，同时最小化附加颗粒污染物的产生。

4. 发明申请

WO2002091453A1 HIGH PRESSURE WAFER-LESS AUTO CLEAN FOR ETCH APPLICATIONS 审中-公开
标题翻译：高压无刷自动清洗用于蚀刻应用
公开(公告)号：WO2002091453A1
公开(公告)日：2002-11-14
申请号：PCT/US2002/014102
申请日：2002-05-03
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet , DAUGHERTY, John, E. , ULLAL, Saurabh, J.
发明人： SINGH, Harmeet , DAUGHERTY, John, E. , ULLAL, Saurabh, J.
IPC分类号： H01L21/3213
CPC分类号： H01J37/32467 , B08B7/00 , H01J37/321 , H01J37/32862 , H01J37/32935
摘要： A method for cleaning a processing chamber is provided. The method initiates with introducing a fluorine containing gaseous mixture into a processing chamber. Then, a plasma is created from the fluorine containing gaseous mixture in the processing chamber. Next, a chamber pressure is established that corresponds to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue. A method for substantially eliminating residual aluminum fluoride particles deposited by an in-situ cleaning process for a semiconductor processing chamber and a plasma processing system for executing an in-situ cleaning process are also provided.
摘要翻译：提供了一种用于清洁处理室的方法。该方法通过将含氟气体混合物引入处理室来启动。然后，从处理室中的含氟气体混合物产生等离子体。接下来，建立对应于阈值离子能量的室压力，其中等离子体的离子清洁处理室的内表面而不残留物。还提供了用于基本上消除通过用于半导体处理室的原位清洁工艺沉积的残余氟化铝颗粒的方法和用于执行原位清洁工艺的等离子体处理系统。

5. 发明申请

WO2011149508A2 APPARATUS AND METHOD FOR TEMPERATURE CONTROL OF A SEMICONDUCTOR SUBSTRATE SUPPORT 审中-公开
标题翻译：半导体基板支持温度控制的装置和方法
公开(公告)号：WO2011149508A2
公开(公告)日：2011-12-01
申请号：PCT/US2011/000867
申请日：2011-05-17
申请人： LAM RESEARCH CORPORATION , RICCI, Anthony , ULLAL, Saurabh , KANG, Michael , BUSCHE, Matthew
发明人： RICCI, Anthony , ULLAL, Saurabh , KANG, Michael , BUSCHE, Matthew
IPC分类号： H01L21/683 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/67248 , H01J37/32715 , H01J37/32724 , H01L21/67109
摘要： A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T 1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T 2 in fluid communication with the supply line and the return line, temperature T 2 being at least 10°C above temperature T 1 ; a pre-cooling unit providing liquid at temperature T pc connected to the inlet and the outlet, temperature T pc being at least 10C below T 1 ; a pre-heating unit providing liquid at temperature T ph connected to the inlet and the outlet, temperature T ph being at least 10°C above T 2 ; a controller operable to selectively operate valves of the recirculation system to recirculate liquid between the flow passage and the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit.
摘要翻译：一种衬底支撑件的再循环系统，半导体衬底在其上在真空室中进行多步骤处理，所述系统包括衬底支撑件，所述衬底支撑件在其底板中具有至少一个液体流动通道，流体连通的入口和出口与流路连通，与入口流体连通的供应管线和与出口流体连通的回流管线; 第一再循环器，其在与所述供应管线和所述回流管线流体连通的温度T 1下提供液体; 提供温度T 2的液体与供应管线和返回管线流体连通的第二再循环器，温度T 2高于温度T 1至少10℃; 提供温度T pc连接到入口和出口的液体的预冷单元，温度T pc比T 1低至少10℃; 预热单元，其在与入口和出口连接的温度T ph下提供液体，温度T ph比T 2高至少10℃; 控制器，其可操作以选择性地操作所述再循环系统的阀，以在所述流动通道和所述第一再循环器，所述第二再循环器，所述预冷单元或所述预热单元之间再循环液体。

6. 发明申请

WO2008048604A1 QUARTZ GUARD RING 审中-公开
标题翻译： QUARTZ GUARD环
公开(公告)号：WO2008048604A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/022080
申请日：2007-10-16
申请人： LAM RESEARCH CORPORATION , LARSON, Dean, J. , BROWN, Daniel , ULLAL, Saurabh, J.
发明人： LARSON, Dean, J. , BROWN, Daniel , ULLAL, Saurabh, J.
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01J37/3255 , H01J37/32009 , H01J37/32568
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.
摘要翻译：用于等离子体反应室的电极组件，用于半导体衬底处理。组件包括上电极，可附接到上电极的上表面的背衬构件和外环。外环围绕背衬构件的外表面并且位于上电极的上表面上方。

7. 发明申请

WO2008048543A1 UPPER ELECTRODE BACKING MEMBER WITH PARTICLE REDUCING FEATURES 审中-公开
标题翻译：具有颗粒减少特性的上电极背部构件
公开(公告)号：WO2008048543A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/021989
申请日：2007-10-16
申请人： LAM RESEARCH CORPORATION , DE LA LLERA, Anthony , RONNE, Allan, K. , KIM, Jaehyun , AUGUSTINO, Jason , DHINDSA, Rajinder , WANG, Yen-Kun , ULLAL, Saurabh, J. , NORELL, Anthony, J. , COMENDANT, Keith , DENTY, Jr., William
发明人： DE LA LLERA, Anthony , RONNE, Allan, K. , KIM, Jaehyun , AUGUSTINO, Jason , DHINDSA, Rajinder , WANG, Yen-Kun , ULLAL, Saurabh, J. , NORELL, Anthony, J. , COMENDANT, Keith , DENTY, Jr., William
IPC分类号： H01L21/205 , H01L21/203
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

8. 发明申请

WO2010042908A3 SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK 审中-公开
公开(公告)号：WO2010042908A3
公开(公告)日：2010-04-15
申请号：PCT/US2009/060290
申请日：2009-10-10
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , ULLAL, Saurabh , HUANG, Tuochuan , FANG, Yan , MCCHESNEY, Jon
发明人： SHIH, Hong , ULLAL, Saurabh , HUANG, Tuochuan , FANG, Yan , MCCHESNEY, Jon
IPC分类号： H01L21/683 , H01L21/687
摘要： The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

9. 发明申请

WO2012039744A3 PLASMA CONFINEMENT RING ASSEMBLY FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体加工釜的等离子体配料环组件
公开(公告)号：WO2012039744A3
公开(公告)日：2012-08-23
申请号：PCT/US2011001501
申请日：2011-08-25
申请人： LAM RES CORP , DE LA LLERA ANTHONY , CARMAN DAVID , TAYLOR TRAVIS R , ULLAL SAURABH J , SINGH HARMEET
发明人： DE LA LLERA ANTHONY , CARMAN DAVID , TAYLOR TRAVIS R , ULLAL SAURABH J , SINGH HARMEET
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069
摘要： A plasma confinement ring assembly with a single movable lower ring can be used for controlling wafer area pressure in a capacitively coupled plasma reaction chamber wherein a wafer is supported on a lower electrode assembly and process gas is introduced into the chamber by an upper showerhead electrode assembly. The assembly includes an upper ring, the lower ring, hangers, hanger caps, spacer sleeves and washers. The lower ring is supported by the hangers and is movable towards the upper ring when the washers come into contact with the lower electrode assembly during adjustment of the gap between the upper and lower electrodes. The hanger caps engage upper ends of the hangers and fit in upper portions of hanger bores in the upper ring. The spacer sleeves surround lower sections of the hangers and fit within lower portions of the hanger bores. The washers fit between enlarged heads of the hangers and a lower surface of the lower ring. The spacer sleeves are dimensioned to avoid rubbing against the inner surfaces of the hanger bores during lifting of the lower ring.
摘要翻译：可以使用具有单个可移动下环的等离子体约束环组件来控制电容耦合等离子体反应室中的晶片面积压力，其中晶片被支撑在下部电极组件上，并且处理气体通过上部喷头电极组件。组件包括上环，下环，吊架，衣架盖，间隔套和垫圈。下环由吊架支撑，并且当在上下电极之间的间隙调节期间垫圈与下电极组件接触时，可以朝向上环移动。衣架帽接合衣架的上端，并安装在上环的衣架孔的上部。间隔套环绕悬挂架的下部并且安装在衣架孔的下部。垫圈安装在衣架的扩大头部和下环的下表面之间。间隔套的尺寸被设计成避免在提升下环期间摩擦挂钩孔的内表面。

10. 发明申请

WO2011031590A3 METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL 审中-公开
标题翻译：基于等离子体信号耦合到基底位置和潜力的等离子体去离子优化的方法和装置
公开(公告)号：WO2011031590A3
公开(公告)日：2011-06-30
申请号：PCT/US2010047382
申请日：2010-08-31
申请人： LAM RES CORP , VALCURE JR JOHN C , ULLAL SAURABH , BYUN DANIEL , SANTOS ED , MAKHRATCHEV KONSTANTIN
发明人： VALCURE JR JOHN C , ULLAL SAURABH , BYUN DANIEL , SANTOS ED , MAKHRATCHEV KONSTANTIN
IPC分类号： H01L21/66 , H01L21/205 , H01L21/3065 , H01L21/687
CPC分类号： H01L21/6833 , H01J37/32091 , H01J37/32935
摘要： A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.
摘要翻译：一种用于优化解扣序列的方法，其包括从下电极去除衬底。该方法包括执行初始分析以确定在解扣序列期间形成的等离子体的第一组电特性数据是否穿过阈值。如果是这样，关闭惰性气体。该方法还包括从下电极稍微升高升降器销，以向上移动基板。该方法还包括执行机械和电气分析，其包括将包括提升器引脚施加的力的第一组机械数据与阈值进行比较。机械和电气分析还包括将第二组电特性数据与阈值进行比较。如果两者都穿过相应的阈值，则由于发生了衬底释放事件而从底部电极去除衬底。

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