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1. 发明申请

WO2004003963A2 PLASMA PROCESSOR WITH ELECTRODE SIMULTANEOUSLY RESPONSIVE TO PLURAL FREQUENCIES 审中-公开
标题翻译：等离子体处理器与电极同时响应多重频率
公开(公告)号：WO2004003963A2
公开(公告)日：2004-01-08
申请号：PCT/US2003/019366
申请日：2003-06-20
申请人： LAM RESEARCH CORPORATION , VAHEDI, Vahid , LOEWENHARDT, Peter , ELLINGBOE, Bert , KUTHI, Andy , FISCHER, Andreas
发明人： VAHEDI, Vahid , LOEWENHARDT, Peter , ELLINGBOE, Bert , KUTHI, Andy , FISCHER, Andreas
IPC分类号： H01J37/00
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体被等离子体约束体积界定，所述等离子体约束体积包括同时响应于第一和第二RF频率下的功率的第一电极与DC接地的第二电极之间的区域。直流接地延长部分与第一电极基本对齐。第一频率的大部分功率耦合到包括第一和第二电极但不包括延伸的路径，而第二频率的大部分功率耦合到包括第一电极和延伸的路径，而不包括第二频率电极。当施加到第一电极时，改变第一和第二频率处的相对功率，控制第一电极的DC偏置电压。

2. 发明申请

WO2004102638A2 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A2
公开(公告)日：2004-11-25
申请号：PCT/US2004/013707
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION , LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
发明人： LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
IPC分类号： H01L21/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的设备。提供了一种电容耦合处理室。提供气源。第一和第二电极设置在处理室内。第一射频电源电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源电连接到第一和第二电极中的至少一个。第一调制控制连接到第一射频电源，以提供对第一射频电源的受控调制。

3. 发明申请

WO2003100817A1 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MUTLI-PART ELECTRODE 审中-公开
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换MUTLI部分电极的部分的方法
公开(公告)号：WO2003100817A1
公开(公告)日：2003-12-04
申请号：PCT/US2003/016318
申请日：2003-05-23
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
发明人： FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
IPC分类号： H01J37/32
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion (110) of the electrode having high wear is replaceable independent of an outer peripheral portion (114) of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processsing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分（110）可以替代而不依赖于电极的外周部分（114）。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如单片电极不可用或昂贵的300mm晶片处理室。

4. 发明申请

WO2005059962A2 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 审中-公开
标题翻译：温度控制热边缘组件，用于降低等离子体反应器蚀刻速率
公开(公告)号：WO2005059962A2
公开(公告)日：2005-06-30
申请号：PCT/US2004/041768
申请日：2004-12-10
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas , LOEWENHARDT, Peter
发明人： FISCHER, Andreas , LOEWENHARDT, Peter
IPC分类号： H01L
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

5. 发明申请

WO2005050700A2 LINE EDGE ROUGHNESS REDUCTION FOR TRENCH ETCH 审中-公开
标题翻译：线边缘粗糙度减少
公开(公告)号：WO2005050700A2
公开(公告)日：2005-06-02
申请号：PCT/US2004/036746
申请日：2004-11-03
申请人： LAM RESEARCH CORPORATION , WAGGANER, Eric , ZHU, Helen, H. , LE, Daniel , LOEWENHARDT, Peter
发明人： WAGGANER, Eric , ZHU, Helen, H. , LE, Daniel , LOEWENHARDT, Peter
IPC分类号： H01L
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了一种用于在衬底上的介电层中蚀刻沟槽到沟槽深度的方法。将ARC施加在电介质层上。在ARC上形成光致抗蚀剂掩模，其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。在介质层中蚀刻沟槽，其电介质至光致抗蚀剂蚀刻选择性为1：1至2：1。

6. 发明申请

WO2012020355A2 METHODS FOR PREVENTING CORROSION OF PLASMA-EXPOSED YTTRIA COATED CONSTITUENTS 审中-公开
标题翻译：防止等离子体暴露涂层的腐蚀方法
公开(公告)号：WO2012020355A2
公开(公告)日：2012-02-16
申请号：PCT/IB2011/053459
申请日：2011-08-03
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , SWAMI, Ganapathy , LOEWENHARDT, Peter , YUNSANG, Kim
发明人： SWAMI, Ganapathy , LOEWENHARDT, Peter , YUNSANG, Kim
IPC分类号： H01L21/205
CPC分类号： C23C16/4404
摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.
摘要翻译：根据本公开的一个实施方案，公开了一种防止等离子体暴露的氧化钇涂覆的组分从环境酸性水解中腐蚀的方法，其中等离子体暴露的氧化钇涂层的组分包括可水解的酸前体。该方法可以包括：从半导体处理组件中去除等离子体暴露的氧化钇涂层的组分; 用柔性吸湿芯材材料结合等离子体暴露的氧化钇涂层组分; 用压倒性的水性混合物水解可水解的酸前体以形成残留的酸性化合物，其中柔性湿润吸湿材料通过毛细管作用将残留的酸性化合物从等离子体暴露的氧化钇涂覆的组分拉出; 用额外的柔性吸湿芯材材料使等离子体暴露的氧化钇涂层组分脱水，以将潜在量的残留酸性化合物远离等离子体暴露的氧化钇涂层组分; 并将隔离曝光的氧化钇涂层的组分与湿气阻塞的外壳中的环境湿度隔离开来。

7. 发明申请

WO2005122226A1 METHOD FOR PLASMA STRIPPING USING PERIODIC MODULATION OF GAS CHEMISTRY AND HYDROCARBON ADDITION 审中-公开
标题翻译：使用气体化学和碳氢化合物添加剂的周期性调节的等离子体分离方法
公开(公告)号：WO2005122226A1
公开(公告)日：2005-12-22
申请号：PCT/US2005/018784
申请日：2005-05-27
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
发明人： YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。保护层形成阶段使用具有沉积气体化学性质的第一气体化学，其中对于每个循环，保护层形成阶段在约0.005至10秒内进行。用于剥离光致抗蚀剂掩模的剥离阶段使用第二气体化学品，其使用剥离气体化学，其中第一气体化学物质不同于第二气体化学物质，其中蚀刻阶段在每个循环的约0.005至10秒内进行。

8. 发明申请

WO2004055855A2 UNIFORM ETCH SYSTEM 审中-公开
标题翻译：均匀蚀刻系统
公开(公告)号：WO2004055855A2
公开(公告)日：2004-07-01
申请号：PCT/US2003/038617
申请日：2003-12-04
申请人： LAM RESEARCH CORPORATION , LARSON, Dean, J. , KADKHODAYAN, Babak , WU, Di , TAKESHITA, Kenji , YEN, Bi-Ming , SU, Xingcai , DENTY, William, M., Jr. , LOEWENHARDT, Peter
发明人： LARSON, Dean, J. , KADKHODAYAN, Babak , WU, Di , TAKESHITA, Kenji , YEN, Bi-Ming , SU, Xingcai , DENTY, William, M., Jr. , LOEWENHARDT, Peter
IPC分类号： H01J37/00
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.
摘要翻译：提供了一种用于向处理室的不同区域提供不同气体的装置。提供了用于提供蚀刻气体流的气体供应。提供了一种与气体供应流体连接的分流器，用于将来自气体供给的蚀刻气体流分解成多个支腿。提供了与多个腿部中的至少一个腿流体连接的调节气体系统。

9. 发明申请

WO2003068442A1 A PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体处理装置和方法
公开(公告)号：WO2003068442A1
公开(公告)日：2003-08-21
申请号：PCT/US2003/004407
申请日：2003-02-14
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , TRUSSEL, Dave , KENNEDY, Bill , LOEWENHARDT, Peter
IPC分类号： B23K10/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32642
摘要： The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode (152), a power generator (154), a second electrode (156), at least one confinement ring (166), and a ground extension (160) surrounding the first electrode (152). The first electrode (152) is configured to receive a workpiece and has an associated first electrode area. The power generator (154) is operatively coupled to the first electrode (152), and the power generator (154) is configured to generate RF power that is communicated to the first electrode (152). The second electrode (156) is disposed at a distance from the first electrode (152). The second electrode (156) is configured to provide a complete electrical circuit for RF power communicated from the first electrode (152). Additionally, the second electrode (156) has a second electrode area that is greater than the first electrode area. At least one confinement ring (166) is configured to assist confine the plasma.
摘要翻译：本发明包括用于将等离子体限制在等离子体处理室内的系统和方法。等离子体处理装置包括第一电极（152），发电机（154），第二电极（156），至少一个限制环（166）和围绕第一电极（152）的接地延伸部（160）。第一电极（152）构造成接收工件并且具有相关联的第一电极区域。功率发生器（154）可操作地耦合到第一电极（152），并且发电机（154）被配置为产生与第一电极（152）连通的RF功率。第二电极（156）设置在离第一电极（152）一定距离处。第二电极（156）被配置为提供从第一电极（152）传送的RF功率的完整电路。此外，第二电极（156）具有大于第一电极区域的第二电极区域。至少一个限制环（166）构造成辅助限制等离子体。

10. 发明公开

EP1474264A1 A PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：电浆处理装置及方法
公开(公告)号：EP1474264A1
公开(公告)日：2004-11-10
申请号：EP03739797.3
申请日：2003-02-14
申请人： Lam Research Corporation
发明人： FISCHER, Andreas , TRUSSEL, Dave , KENNEDY, Bill , LOEWENHARDT, Peter
IPC分类号： B23K10/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32642
摘要： The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode (152), a power generator (154), a second electrode (156), at least one confinement ring (166), and a ground extension (160) surrounding the first electrode (152). The first electrode (152) is configured to receive a workpiece and has an associated first electrode area. The power generator (154) is operatively coupled to the first electrode (152), and the power generator (154) is configured to generate RF power that is communicated to the first electrode (152). The second electrode (156) is disposed at a distance from the first electrode (152). The second electrode (156) is configured to provide a complete electrical circuit for RF power communicated from the first electrode (152). Additionally, the second electrode (156) has a second electrode area that is greater than the first electrode area. At least one confinement ring (166) is configured to assist confine the plasma.

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