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1. 发明申请

WO2004003963A2 PLASMA PROCESSOR WITH ELECTRODE SIMULTANEOUSLY RESPONSIVE TO PLURAL FREQUENCIES 审中-公开
标题翻译：等离子体处理器与电极同时响应多重频率
公开(公告)号：WO2004003963A2
公开(公告)日：2004-01-08
申请号：PCT/US2003/019366
申请日：2003-06-20
申请人： LAM RESEARCH CORPORATION , VAHEDI, Vahid , LOEWENHARDT, Peter , ELLINGBOE, Bert , KUTHI, Andy , FISCHER, Andreas
发明人： VAHEDI, Vahid , LOEWENHARDT, Peter , ELLINGBOE, Bert , KUTHI, Andy , FISCHER, Andreas
IPC分类号： H01J37/00
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体被等离子体约束体积界定，所述等离子体约束体积包括同时响应于第一和第二RF频率下的功率的第一电极与DC接地的第二电极之间的区域。直流接地延长部分与第一电极基本对齐。第一频率的大部分功率耦合到包括第一和第二电极但不包括延伸的路径，而第二频率的大部分功率耦合到包括第一电极和延伸的路径，而不包括第二频率电极。当施加到第一电极时，改变第一和第二频率处的相对功率，控制第一电极的DC偏置电压。

2. 发明申请

WO2004102638A2 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A2
公开(公告)日：2004-11-25
申请号：PCT/US2004/013707
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION , LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
发明人： LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
IPC分类号： H01L21/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的设备。提供了一种电容耦合处理室。提供气源。第一和第二电极设置在处理室内。第一射频电源电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源电连接到第一和第二电极中的至少一个。第一调制控制连接到第一射频电源，以提供对第一射频电源的受控调制。

3. 发明申请

WO2003100817A1 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MUTLI-PART ELECTRODE 审中-公开
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换MUTLI部分电极的部分的方法
公开(公告)号：WO2003100817A1
公开(公告)日：2003-12-04
申请号：PCT/US2003/016318
申请日：2003-05-23
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
发明人： FISCHER, Andreas , KENNEDY, William, S. , LOEWENHARDT, Peter , TRUSSELL, David
IPC分类号： H01J37/32
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion (110) of the electrode having high wear is replaceable independent of an outer peripheral portion (114) of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processsing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分（110）可以替代而不依赖于电极的外周部分（114）。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如单片电极不可用或昂贵的300mm晶片处理室。

4. 发明申请

WO2005059962A2 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 审中-公开
标题翻译：温度控制热边缘组件，用于降低等离子体反应器蚀刻速率
公开(公告)号：WO2005059962A2
公开(公告)日：2005-06-30
申请号：PCT/US2004/041768
申请日：2004-12-10
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas , LOEWENHARDT, Peter
发明人： FISCHER, Andreas , LOEWENHARDT, Peter
IPC分类号： H01L
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

5. 发明申请

WO2012154454A3 MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL 审中-公开
公开(公告)号：WO2012154454A3
公开(公告)日：2012-11-15
申请号：PCT/US2012/036018
申请日：2012-05-01
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas , BASS, William Scott
发明人： FISCHER, Andreas , BASS, William Scott
IPC分类号： H01L21/3065
摘要： A method for preventing formation of metal silicide material on a wafer bevel is provided, where the wafer bevel surrounds a central region of the wafer. The wafer is placed in bevel plasma processing chamber. A protective layer is deposited on the wafer bevel. The wafer is removed from the bevel plasma processing chamber. A metal layer is deposited over at least part of the central region of the wafer, wherein part of the metal layer is deposited over the protective layer. Semiconductor devices are formed while preventing metal silicide formation on the wafer bevel.

6. 发明申请

WO2010117970A2 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：多功能电容耦合等离子体蚀刻室
公开(公告)号：WO2010117970A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030020
申请日：2010-04-06
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , DHINDSA, Rajinder , KOSHIISHI, Akira , FISCHER, Andreas
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , KOSHIISHI, Akira , FISCHER, Andreas
IPC分类号： H01L21/3065 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
摘要翻译：一种与气体一起使用的等离子体处理系统。等离子体处理系统包括第一电极，第二电极，气体输入端口，电源和无源电路。气体输入端口可操作以在第一电极和第二电极之间提供气体。电源可操作地从第一电极和第二电极之间的气体点燃等离子体。无源电路耦合到第二电极，并且被配置为调节第二电极的阻抗，电压电位和DC偏置电位中的一个或多个。无源射频电路包括与电感器并联布置的电容器。

7. 发明申请

WO2010071785A2 PLASMA CONFINEMENT STRUCTURES IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：等离子体处理系统中的等离子体约束结构
公开(公告)号：WO2010071785A2
公开(公告)日：2010-06-24
申请号：PCT/US2009/068195
申请日：2009-12-16
申请人： LAM RESEARCH CORPORATION , HUDSON, Eric , FISCHER, Andreas
发明人： HUDSON, Eric , FISCHER, Andreas
IPC分类号： H05H1/24 , H05H1/34
CPC分类号： C23C16/00 , C23F1/00 , H01J37/32082 , H01J37/32623
摘要： A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.
摘要翻译：提供了一种可移动的等离子体限制结构，其被配置为在等离子体处理基板期间将等离子体限制在等离子体处理室中。可移动等离子体限制结构包括构造成围绕等离子体的可移动等离子体面向结构。可移动等离子体限制结构还包括可移动导电结构，其设置在可移动等离子体面向结构的外部，并且被配置为以可移动的等离子体面向结构作为单个单元展开和缩回以便于处理基板。可移动导电结构是在等离子体处理期间接地的射频（RF）。等离子体等离子体结构在等离子体处理期间设置在等离子体和可移动导电结构之间，使得来自等离子体处理期间来自等离子体处理的来自等离子体的RF电流通过可移动等离子体面向结构流动到可移动导电结构。

8. 发明申请

WO2007149694A2 APPARATUSES, SYSTEMS AND METHODS FOR RAPID CLEANING OF PLASMA CONFINEMENT RINGS WITH MINIMAL EROSION OF OTHER CHAMBER PARTS 审中-公开
标题翻译：用于其他室内部件的最小侵蚀的等离子体配合环的快速清洁的装置，系统和方法
公开(公告)号：WO2007149694A2
公开(公告)日：2007-12-27
申请号：PCT/US2007/070265
申请日：2007-06-01
申请人： LAM RESEARCH CORPORATION , HUDSON, Eric , FISCHER, Andreas
发明人： HUDSON, Eric , FISCHER, Andreas
IPC分类号： C23F1/00
CPC分类号： H01J37/32862 , B08B7/0035 , H01J37/32009 , H01J37/32091 , H01J37/321 , H01J37/32596
摘要： An apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.
摘要翻译：公开了一种用于从等离子体限制环快速除去聚合物膜同时最小化其它等离子体蚀刻室部件的侵蚀的装置。该装置包括中心组件，电极板，约束环叠层，第一等离子体源和第二等离子体源。电极板被固定到中心组件的表面，其中沿着外圆周限定了通道。第一等离子体源设置在通道内并且沿着中心组件的外圆周，其中第一等离子体源被配置为将等离子体引导到限制环堆叠的内圆周表面。位于远离第一等离子体源的第二等离子体源被配置为在蚀刻室内的衬底上执行处理操作。

9. 发明申请

WO2007100528A2 INTEGRATED CAPACITIVE AND INDUCTIVE POWER SOURCES FOR A PLASMA ETCHING CHAMBER 审中-公开
标题翻译：用于等离子体蚀刻室的集成电容和电感电源
公开(公告)号：WO2007100528A2
公开(公告)日：2007-09-07
申请号：PCT/US2007/004224
申请日：2007-02-16
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , SRINIVASAN, Mukund , TAKESHITA, Kenji , MARAKHTANOV, Alexei , FISCHER, Andreas
发明人： DHINDSA, Rajinder , SRINIVASAN, Mukund , TAKESHITA, Kenji , MARAKHTANOV, Alexei , FISCHER, Andreas
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：概括地说，本发明通过提供改进的室清洁机构来满足这些需要。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

10. 发明申请

WO2006135909A1 CONFINED PLASMA WITH ADJUSTABLE ELECTRODE AREA RATIO 审中-公开
标题翻译：具有可调节电极面积比例的限制等离子体
公开(公告)号：WO2006135909A1
公开(公告)日：2006-12-21
申请号：PCT/US2006/023057
申请日：2006-06-12
申请人： LAM RESEARCH CORPORATION , FISCHER, Andreas
发明人： FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/32642
摘要： A plasma reactor (200) comprises a chamber (202), a bottom electrode (204), a top electrode (206), a first set of confinement rings (208), a second set of confinement rings (210), and a ground extension (212). The top and bottom electrodes, the first and second sets of confinement rings, and the ground extension are all enclosed within the chamber. The first set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a first volume between the bottom electrode and the top electrode. The second set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a second volume between the bottom electrode and the top electrode. The second volume is at least greater than the first volume. A ground extension is adjacent to and surrounds the bottom electrode. The first set of confinement rings and the second set of confinement rings are capable of being independently raised and lowered to extend into a region above the ground extension.
摘要翻译：等离子体反应器（200）包括腔室（202），底部电极（204），顶部电极（206），第一组限制环（208），第二组限制环（210）和地面扩展（212）。顶部和底部电极，第一组和第二组约束环和接地延伸部都被封闭在腔室内。第一组限制环基本上平行于底部电极和顶部电极并围绕底部电极和顶部电极之间的第一容积。第二组限制环基本上平行于底部电极和顶部电极并围绕底部电极和顶部电极之间的第二体积。第二卷至少大于第一卷。接地延伸部分邻近并包围底部电极。第一组限制环和第二组约束环能够被独立地升高和降低以延伸到地面延伸部上方的区域中。

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