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1. 发明申请

WO2005122226A1 METHOD FOR PLASMA STRIPPING USING PERIODIC MODULATION OF GAS CHEMISTRY AND HYDROCARBON ADDITION 审中-公开
标题翻译：使用气体化学和碳氢化合物添加剂的周期性调节的等离子体分离方法
公开(公告)号：WO2005122226A1
公开(公告)日：2005-12-22
申请号：PCT/US2005/018784
申请日：2005-05-27
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
发明人： YUN, Seokmin , ZHU, Ji , CIRIGLIANO, Peter , LEE, Sangheon , CHOI, Thomas, S. , LOEWENHARDT, Peter , WILCOXSON, Mark, H. , SADJADI, Reza , HUDSON, Eric, A. , TIETZ, James, V.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。保护层形成阶段使用具有沉积气体化学性质的第一气体化学，其中对于每个循环，保护层形成阶段在约0.005至10秒内进行。用于剥离光致抗蚀剂掩模的剥离阶段使用第二气体化学品，其使用剥离气体化学，其中第一气体化学物质不同于第二气体化学物质，其中蚀刻阶段在每个循环的约0.005至10秒内进行。

2. 发明申请

WO2009151656A2 METHOD OF DIELECTRIC FILM TREATMENT 审中-公开
标题翻译：电介质膜处理方法
公开(公告)号：WO2009151656A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/035030
申请日：2009-02-24
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , ZHU, Ji , DELARIOS, John, M. , WILCOXSON, Mark
发明人： YUN, Seokmin , ZHU, Ji , DELARIOS, John, M. , WILCOXSON, Mark
CPC分类号： H01L21/67051 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/31138
摘要： A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.
摘要翻译：用于在蚀刻操作之后清洁衬底表面的方法和系统包括确定与衬底的表面相关联的多个工艺参数。工艺参数定义与衬底表面相关的特性，例如待清洁的衬底表面的特性，待除去的污染物，在衬底上形成的特征以及在制造操作中使用的化学品。基于工艺参数识别多个应用化学物质。多种应用化学品包括作为乳液的第一应用化学品，其具有与第一不混溶液体组合的第一不混溶液体和分散在第一不混溶液体内的固体颗粒。包括第一应用化学物质的多种施加化学物质被施加到基底的表面，使得组合的化学物质通过从衬底的表面基本上除去颗粒和聚合物残留的污染物同时保持特征的特征而增强了清洁过程，通过其形成特征的低k电介质材料。

3. 发明申请

WO2011094132A3 METHOD OF REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 审中-公开
标题翻译：在高纵横比纳米结构中减少图案塌陷的方法
公开(公告)号：WO2011094132A3
公开(公告)日：2011-08-04
申请号：PCT/US2011/022075
申请日：2011-01-21
申请人： LAM RESEARCH CORPORATION , YASSERI, Amir A. , ZHU, Ji , YUN, Seokmin , MUI, David S.L. , MIKHAYLICHENKO, Katrina
发明人： YASSERI, Amir A. , ZHU, Ji , YUN, Seokmin , MUI, David S.L. , MIKHAYLICHENKO, Katrina
IPC分类号： H01L21/302
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构的表面的方法，以在制造半导体器件所涉及的一些严格处理期间帮助保护精细的纳米结构。处理包含高纵横比纳米结构的晶片以使纳米结构的表面更加疏水。该处理可以包括应用底漆，该底漆化学改变纳米结构的表面，防止其在随后的湿法清洁过程期间被损坏。然后可以进一步处理晶片，例如湿法清洁过程，然后进行干燥过程。纳米结构的疏水性增加有助于减少或防止纳米结构的塌陷。

4. 发明申请

WO2009008958A2 METHOD OF POST ETCH POLYMER RESIDUE REMOVAL 审中-公开
标题翻译：去除聚合物残余物后的方法
公开(公告)号：WO2009008958A2
公开(公告)日：2009-01-15
申请号：PCT/US2008/007759
申请日：2008-06-20
申请人： LAM RESEARCH CORPORATION , YUN, Seokmin , WILCOXSON, Mark , ZHU, Ji , CHUANG, Kevin , CHANG, Hsiao, Wei , LOU, David
发明人： YUN, Seokmin , WILCOXSON, Mark , ZHU, Ji , CHUANG, Kevin , CHANG, Hsiao, Wei , LOU, David
IPC分类号： H01L21/3065
CPC分类号： H01L21/02063 , H01L21/6708
摘要： A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
摘要翻译：用于从衬底表面除去蚀刻后聚合物残余物的系统和方法包括识别用于从衬底表面去除蚀刻后聚合物残余物的干式快速化学物质。干闪光化学品被配置为选择性地去除在通过低k电介质膜层形成特征的区域中由蚀刻操作留下的蚀刻后聚合物残留物。使用短闪速工艺来施加所识别的干闪光化学品，以去除至少一部分蚀刻后聚合物残余物，同时最小化对介电膜层的损害。然后将湿清洁化学物质施加到基底的表面。湿式清洁化学品的应用有助于基本上去除短闪过程留下的剩余蚀刻后聚合物残留物。

5. 发明申请

WO2008002669A2 POST ETCH WAFER SURFACE CLEANING WITH LIQUID MENISCUS 审中-公开
标题翻译：后洗涤表面清洗与液体肉汤
公开(公告)号：WO2008002669A2
公开(公告)日：2008-01-03
申请号：PCT/US2007/015249
申请日：2007-06-28
申请人： LAM RESEARCH CORPORATION , ZHU, Ji , YUN, Seokmin , WILCOXSON, Mark , DE LARIOS, John, M.
发明人： ZHU, Ji , YUN, Seokmin , WILCOXSON, Mark , DE LARIOS, John, M.
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片的表面的方法。将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。用晶片表面上的一些污染物去除第一清洗液。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。除去氧化剂溶液，然后将第二清洁溶液施加到晶片表面。从晶片表面去除第二清洗溶液。清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

6. 发明申请

WO2011008658A1 MATERIALS AND SYSTEMS FOR ADVANCED SUBSTRATE CLEANING 审中-公开
标题翻译：高级基板清洗的材料和系统
公开(公告)号：WO2011008658A1
公开(公告)日：2011-01-20
申请号：PCT/US2010/041630
申请日：2010-07-09
申请人： LAM RESEARCH CORPORATION , MUI, David , ZHU, Ji , MENDIRATTA, Arjun
发明人： MUI, David , ZHU, Ji , MENDIRATTA, Arjun
IPC分类号： C11D1/66 , C11D1/76
CPC分类号： B08B7/0014 , C11D3/222 , C11D3/225 , C11D3/3707 , C11D3/3723 , C11D3/3746 , C11D3/3753 , C11D3/3765 , C11D3/3773 , C11D3/3776 , C11D3/378 , C11D3/38 , C11D3/43 , C11D7/268 , C11D7/5004 , C11D11/0047 , H01L21/02063 , H01L21/02071 , H01L21/6704 , H01L21/67051
摘要： The embodiments of the present invention provide improved materials, apparatus, and methods for cleaning wafer surfaces, especially surfaces of patterned wafers (or substrates). The cleaning materials, apparatus, and methods discussed have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning material includes polymers of one or more polymeric compounds. The cleaning materials can be used in a wide range of viscosity and pH to clean different types of surfaces. The cleaning materials are in liquid phase, and deform around device features to capture the contaminants on the substrate. The polymers entrap the contaminants preventing their return to the substrate surface. The cleaning apparatus is designed to dispense and rinse cleaning materials with a range of viscosities.
摘要翻译：本发明的实施例提供用于清洁晶片表面，特别是图案化晶片（或基板）表面的改进的材料，装置和方法。所讨论的清洁材料，设备和方法具有在清洁具有精细特征的图案化基底而没有实质上损害特征的优点。清洁材料包括一种或多种聚合物的聚合物。清洁材料可以在广泛的粘度和pH范围内使用以清洁不同类型的表面。清洁材料处于液相，并围绕设备特征变形以捕获衬底上的污染物。聚合物捕获污染物，防止其返回到基底表面。该清洁装置设计用于分配和冲洗具有一定粘度范围的清洁材料。

7. 发明申请

WO2009078968A1 METHODS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 审中-公开
标题翻译：用于单相和两相介质去除颗粒的方法
公开(公告)号：WO2009078968A1
公开(公告)日：2009-06-25
申请号：PCT/US2008/013696
申请日：2008-12-12
申请人： LAM RESEARCH CORPORATION , MUI, David, S., L. , SRINIVASAN, Satish , PENG, Grant , ZHU, Ji , KON, Shih-Chung , PODLESNIK, Dragan , MENDIRATTA, Arjun
发明人： MUI, David, S., L. , SRINIVASAN, Satish , PENG, Grant , ZHU, Ji , KON, Shih-Chung , PODLESNIK, Dragan , MENDIRATTA, Arjun
IPC分类号： H01L21/302 , H01L21/304
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用于清洁具有精细特征的图案化衬底的方法。用于清洁图案化衬底的方法具有通过使用所述清洁材料来清洁具有精细特征的图案化衬底而不会基本上损坏特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损伤全部降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

8. 发明申请

WO2010053642A1 COMPOSITION OF A CLEANING MATERIAL FOR PARTICLE REMOVAL 审中-公开
标题翻译：用于颗粒去除的清洁材料的组成
公开(公告)号：WO2010053642A1
公开(公告)日：2010-05-14
申请号：PCT/US2009/059292
申请日：2009-10-01
申请人： LAM RESEARCH CORPORATION , ZHU, Ji , MENDIRATTA, Arjun , MUI, Davie
发明人： ZHU, Ji , MENDIRATTA, Arjun , MUI, Davie
IPC分类号： C11D3/37
CPC分类号： C11D7/5004 , C11D3/222 , C11D3/3765 , C11D3/3773 , C11D3/3776
摘要： The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. To assist removing of particles from the wafer (or substrate) surfaces, the polymeric compound of the polymers can contain a polar functional group, which can establish polar-polar molecular interaction and hydrogen bonds with hydrolyzed particles on the wafer surface. The polymers of a polymeric compound(s) with a large molecular weight form long polymer chains and network. The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. The polymeric compound(s) of the polymers may also include a functional group that carries charge in the cleaning solution. The charge of the functional group of the polymers improves the particle removal efficiency.
摘要翻译：本发明的实施例提供用于清洁具有精细特征的图案化衬底的改进材料。清洁材料在清洁具有精细特征的图案化基材上具有优点，而基本上不损坏特征。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损伤全部降低在一起。为了帮助从晶片（或衬底）表面去除颗粒，聚合物的聚合物可以含有极性官能团，其可以与晶片表面上的水解颗粒建立极性极性的分子相互作用和氢键。具有大分子量的高分子化合物的聚合物形成长的聚合物链和网络。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。聚合物的聚合物还可以包括在清洁溶液中携带电荷的官能团。聚合物官能团的电荷提高了颗粒去除效率。

9. 发明申请

WO2009079422A1 METHOD AND APPARATUS FOR REMOVING CONTAMINANTS FROM SUBSTRATE 审中-公开
标题翻译：从基材中除去污染物的方法和装置
公开(公告)号：WO2009079422A1
公开(公告)日：2009-06-25
申请号：PCT/US2008/086742
申请日：2008-12-14
申请人： LAM RESEARCH CORPORATION , ZHU, Ji , MENDIRATTA, Arjun , MUI, David
发明人： ZHU, Ji , MENDIRATTA, Arjun , MUI, David
IPC分类号： H01L21/302 , H01L21/304
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.
摘要翻译：将清洁材料施加到基板的表面。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种聚合物材料。冲洗流体以受控的速度施加到基底的表面，以从衬底的表面去除被清除材料和被污染的清洁材料中的污染物。洗涤流体的受控速度被设定为使得清洁材料在被冲洗流体冲击时以弹性方式表现，从而改善从基材表面去除污染物质。

10. 发明申请

WO2009078969A1 APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 审中-公开
标题翻译：用于单相和两相介质去除颗粒的装置
公开(公告)号：WO2009078969A1
公开(公告)日：2009-06-25
申请号：PCT/US2008/013697
申请日：2008-12-12
申请人： LAM RESEARCH CORPORATION , MUI, David, S., L. , SRINIVASAN, Satish , PENG, Grant , ZHU, Ji , KON, Shih-Chung , PODLESNIK, Dragan , MENDIRATTA, Arjun
发明人： MUI, David, S., L. , SRINIVASAN, Satish , PENG, Grant , ZHU, Ji , KON, Shih-Chung , PODLESNIK, Dragan , MENDIRATTA, Arjun
IPC分类号： H01L21/302 , H01L21/304
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用清洁材料清洁具有精细特征的图案化衬底的设备。使用清洁材料的设备具有清洁具有精细特征的图案化基材而不会显着损害特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损伤全部降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

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