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1. 发明申请

WO2005050700A2 LINE EDGE ROUGHNESS REDUCTION FOR TRENCH ETCH 审中-公开
标题翻译：线边缘粗糙度减少
公开(公告)号：WO2005050700A2
公开(公告)日：2005-06-02
申请号：PCT/US2004/036746
申请日：2004-11-03
申请人： LAM RESEARCH CORPORATION , WAGGANER, Eric , ZHU, Helen, H. , LE, Daniel , LOEWENHARDT, Peter
发明人： WAGGANER, Eric , ZHU, Helen, H. , LE, Daniel , LOEWENHARDT, Peter
IPC分类号： H01L
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了一种用于在衬底上的介电层中蚀刻沟槽到沟槽深度的方法。将ARC施加在电介质层上。在ARC上形成光致抗蚀剂掩模，其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。在介质层中蚀刻沟槽，其电介质至光致抗蚀剂蚀刻选择性为1：1至2：1。

2. 发明申请

WO2009152036A1 ORGANIC ARC ETCH SELECTIVE FOR IMMERSION PHOTORESIST 审中-公开
标题翻译：有机电弧选择用于浸没光电子
公开(公告)号：WO2009152036A1
公开(公告)日：2009-12-17
申请号：PCT/US2009/046307
申请日：2009-06-04
申请人： LAM RESEARCH CORPORATION , ZHU, Helen, H. , CIRIGLIANO, Peter , SADJADI, S.M., Reza
发明人： ZHU, Helen, H. , CIRIGLIANO, Peter , SADJADI, S.M., Reza
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/31138 , H01L21/31144
摘要： A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched.
摘要翻译：提供了一种用于在衬底上方的蚀刻层中形成蚀刻特征的方法，并且在浸没式光刻光刻胶掩模下面的有机ARC层下面形成蚀刻特征。将具有蚀刻层，有机ARC层和浸没光刻光刻胶掩模的基板放置在处理室中。有机ARC层打开。有机ARC层开口包括将有机ARC开放气体混合物流入处理室，其中有机ARC开放气体混合物包含蚀刻剂气体和包含CO的聚合气体，从有机ARC开放气体混合物形成有机ARC开放等离子体，用有机ARC打开的等离子体蚀刻有机ARC层直到有机ARC层被打开，并且在刻蚀层被完全蚀刻之前停止有机ARC开放气体混合物流入处理室。

3. 发明申请

WO2002065512A2 UNIQUE PROCESS CHEMISTRY FOR ETCHING ORGANIC LOW-K MATERIALS 审中-公开
标题翻译：用于蚀刻有机低K材料的独特工艺化学
公开(公告)号：WO2002065512A2
公开(公告)日：2002-08-22
申请号：PCT/US2002/002926
申请日：2002-01-29
申请人： LAM RESEARCH CORPORATION , ZHU, Helen, H. , BOWERS, James, R. , MOREY, Ian, J. , BABIE, Wayne , GOSS, Michael
发明人： ZHU, Helen, H. , BOWERS, James, R. , MOREY, Ian, J. , BABIE, Wayne , GOSS, Michael
IPC分类号： H01L21/00
CPC分类号： H01L21/31138
摘要： Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.
摘要翻译：用微蚀刻效应最小化在集成电路晶片中蚀刻特征的方法。该方法将包括碳氟化合物气体的蚀刻剂气体流引入晶片，并且使用蚀刻剂气体在晶片的至少一部分附近形成等离子体。等离子体用于蚀刻晶片中的特征的至少一部分。将碳氟化合物分解成氟和烃类具有两个功能。氟化物防止或显着减少溅射的硬掩模组分在蚀刻期间沉积在蚀刻特征的地板上。烃类起到在特征的侧壁上形成钝化层的作用。

4. 发明申请

WO2005088693A1 LINE EDGE ROUGHNESS CONTROL 审中-公开
标题翻译：线边缘粗糙度控制
公开(公告)号：WO2005088693A1
公开(公告)日：2005-09-22
申请号：PCT/US2005/007386
申请日：2005-03-02
申请人： LAM RESEARCH CORPORATION , CHOI, Youngjin , ZHU, Helen, H. , LEE, Sangheon , KANG, Sean, S.
发明人： CHOI, Youngjin , ZHU, Helen, H. , LEE, Sangheon , KANG, Sean, S.
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A method for etching a layer through a photoresist mask with an ARC layer between the layer to be etched and the photoresist mask over a substrate is provided. The substrate is placed into a processing chamber. An ARC open gas mixture is provided into the processing chamber. The ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO and CH3F. An ARC open plasma is formed from the ARC open gas mixture. The ARC layer is etched with the ARC open plasma until the ARC layer is opened. The ARC open gas mixture stopped before the layer to be etched is completely etched.
摘要翻译：提供了一种通过具有ARC层之间的光致抗蚀剂掩模蚀刻层的方法，该蚀刻掩模在被蚀刻层与衬底上的光致抗蚀剂掩模之间。将基板放置在处理室中。将ARC开放气体混合物提供到处理室中。 ARC敞开气体混合物包括蚀刻剂气体和包含CO和CH 3 F的聚合气体。 ARC开放式气体混合物形成ARC开放式等离子体。用ARC打开的等离子体蚀刻ARC层，直到ARC层打开。 ARC打开的气体混合物在被蚀刻层被完全蚀刻之前停止。

5. 发明申请

WO2002080230A3 METHOD OF PLASMA ETCHING LOW-K ORGANOSILICATE MATERIALS 审中-公开
公开(公告)号：WO2002080230A3
公开(公告)日：2002-10-10
申请号：PCT/US2002/006648
申请日：2002-03-21
申请人： LAM RESEARCH CORPORATION , LI, Si, Yi , ZHU, Helen, H. , SADJADI, S., M., Reza , TIETZ, James, V. , HELMER, Bryan, A.
发明人： LI, Si, Yi , ZHU, Helen, H. , SADJADI, S., M., Reza , TIETZ, James, V. , HELMER, Bryan, A.
IPC分类号： H01L21/311
摘要： A semiconductor manufacturing process wherein organosilicate glass is plasma etched with selectivity to an overlying and/or underlying dielectric layer. The oxygen-free etchant gas includes a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluorocarbon reactant and nitrogen reactant being supplied to the chamber at flow rates such that the fluorocarbon reactant flow rate is less than the nitrogen reactant flow rate. The etch rate of the organosilicate glass can be at least 5 times higher than that of the dielectric layer. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

6. 发明申请

WO2004102277A3 METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN 审中-公开
公开(公告)号：WO2004102277A3
公开(公告)日：2004-11-25
申请号：PCT/US2004/013818
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION , XIAO, Hanzhong , ZHU, Helen, H. , TANG, Kuo-Lung , SADJADI, S.M., Reza
发明人： XIAO, Hanzhong , ZHU, Helen, H. , TANG, Kuo-Lung , SADJADI, S.M., Reza
IPC分类号： G03F7/09
摘要： A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.

7. 发明公开

EP1623275A2 METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN 审中-公开
标题翻译：方法产生改进的双层抗蚀图案
公开(公告)号：EP1623275A2
公开(公告)日：2006-02-08
申请号：EP04751274.4
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION
发明人： XIAO, Hanzhong , ZHU, Helen, H. , TANG, Kuo-Lung , SADJADI, S.M., Reza
IPC分类号： G03F7/09 , H01L21/768
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0332 , H01L21/31144
摘要： A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.

8. 发明公开

EP1683194A2 LINE EDGE ROUGHNESS REDUCTION FOR TRENCH ETCH 审中-公开
标题翻译：用于沟槽蚀刻的线边缘粗糙度降低
公开(公告)号：EP1683194A2
公开(公告)日：2006-07-26
申请号：EP04810317.0
申请日：2004-11-03
申请人： LAM RESEARCH CORPORATION
发明人： WAGGANER, Eric , ZHU, Helen, H. , LE, Daniel , LOEWENHARDT, Peter
IPC分类号： H01L21/4763
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench (314, Fig. 3B) to a trench depth (318, Fig. 3B) in a dielectric layer (308, Fig. 3B) over a substrate (304, Fig. 3B) is provided. An ARC (310, Fig. 3B) is applied over the dielectric layer (308, Fig. 3B). A photoresist mask (312, Fig. 3B) is formed on the ARC (310, Fig. 3B), where the photoresist mask has a thickness. The ARC is etched through. A trench (314, Fig. 3B) is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了用于在衬底（304，图3B）上方的介电层（308，图3B）中蚀刻沟槽（314，图3B）至沟槽深度（318，图3B）的方法。在介电层（308，图3B）上施加ARC（310，图3B）。在ARC（310，图3B）上形成光致抗蚀剂掩模（312，图3B），其中光致抗蚀剂掩模具有厚度。 ARC被蚀刻穿过。用介电材料将沟槽（图3B中的314）蚀刻到介电层中，使光致抗蚀剂蚀刻选择性在1：1和2：1之间。

9. 发明公开

EP1012877A1 METHOD FOR SELECTIVE PLASMA ETCH 审中-公开
标题翻译：方法选择性等离子刻蚀
公开(公告)号：EP1012877A1
公开(公告)日：2000-06-28
申请号：EP98944527.5
申请日：1998-08-25
申请人： LAM Research Corporation
发明人： ZHU, Helen, H. , MUELLER, George, A. , NGUYEN, Thomas, D. , LI, Lumin
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： Disclosed is a method for improving the selectivity of dielectric layers to photoresist layers and base layers. The method is performed in a plasma processing chamber, and the photoresist layer is coated over the dielectric layer. The method includes introducing an etchant source gas into the plasma processing chamber, which consists essentially of a CxFy gas and an N2 gas. The method further includes striking a plasma in the plasma processing chamber from the etchant source gas. The method additionally includes etching at least a portion of the dielectric layer with the plasma through to a base layer that underlies the dielectric layer. The method is also well suited for anisotropically etching an oxide layer with very high selectivities to Si, Si3N4, TiN, and metal silicides.

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