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1. 发明申请

WO2008010943A3 HYBRID RF CAPACITIVELY AND INDUCTIVELY COUPLED PLASMA SOURCE USING MULTIFREQUENCY RF POWERS AND METHODS OF USE THEREOF 审中-公开
标题翻译：混合射频功率和电感耦合等离子体源使用多频RF功率及其使用方法
公开(公告)号：WO2008010943A3
公开(公告)日：2009-04-09
申请号：PCT/US2007015928
申请日：2007-07-13
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , FISCHER ANDREAS
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

2. 发明申请

WO2013036371A2 PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION 审中-公开
标题翻译：双室配置中的脉冲等离子体室
公开(公告)号：WO2013036371A2
公开(公告)日：2013-03-14
申请号：PCT/US2012051460
申请日：2012-08-17
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
IPC分类号： H01L21/3065 , C23F1/08 , H01L21/306
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/32825 , H01J2237/3341 , H01L21/31116 , H01L21/67069
摘要： Systems, methods, and computer programs for processing a semiconductor substrate in a pulsed plasma chamber in a dual chamber configuration are provided. A wafer processing apparatus with a top chamber and a bottom chamber separated by a plate that fluidly connects the top chamber to the bottom chamber includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller is operable to set the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode in the top chamber. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode in the bottom chamber. Further, the system controller is operable to set parameters for the CW controller and the pulse controller to regulate the flow of species from the top chamber to the bottom chamber through the plate during operation of the chamber. The flow of species assists in the negative-ion etching and in neutralizing excessive positive charge on the wafer surface during afterglow in the OFF period, and assists in the re- striking of the plasma in the bottom chamber during the ON period.
摘要翻译：提供了用于在双室配置中处理脉冲等离子体室中的半导体衬底的系统，方法和计算机程序。具有通过将顶部腔室与底部腔室流体连接的板分隔开的顶部腔室和底部腔室的晶片处理装置包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器可操作地设置耦合到顶部室中顶部电极的第一射频（RF）电源的电压和频率。脉冲控制器可操作地为耦合到底部室中的底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。此外，系统控制器可操作以设置CW控制器和脉冲控制器的参数，以调节在室的操作期间物种从顶室到底室通过板的流动。物质的流动有助于负离子蚀刻，并且在关闭期间在余辉期间中和晶片表面上的过量正电荷，并且有助于在接通期间等离子体在底室中的重新打开。

3. 发明申请

WO2010117969A3 MODULATED MULTI-FREQUENCY PROCESSING METHOD 审中-公开
标题翻译：调制多频处理方法
公开(公告)号：WO2010117969A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030019
申请日：2010-04-06
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
发明人： MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
IPC分类号： H01L21/3065 , H05H1/24 , H05H1/36
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.
摘要翻译：提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。最大幅度部分比最小振幅部分的幅度更大。占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。第二周期部分在最大振幅部分期间另外具有第二频率。第二周期部分的幅度调制被锁相到第一连续周期部分。

4. 发明申请

WO2007100528A3 INTEGRATED CAPACITIVE AND INDUCTIVE POWER SOURCES FOR A PLASMA ETCHING CHAMBER 审中-公开
标题翻译：用于等离子体蚀刻室的集成电容和电感电源
公开(公告)号：WO2007100528A3
公开(公告)日：2008-10-23
申请号：PCT/US2007004224
申请日：2007-02-16
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , TAKESHITA KENJI , MARAKHTANOV ALEXEI , FISCHER ANDREAS
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , TAKESHITA KENJI , MARAKHTANOV ALEXEI , FISCHER ANDREAS
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：概括地说，本发明通过提供改进的室清洁机构来满足这些需要。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

5. 发明申请

WO2010117970A3 MULTIFREQUENCY CAPACITIVELY COUPLED PLASMA ETCH CHAMBER 审中-公开
标题翻译：多功能电容耦合等离子体蚀刻室
公开(公告)号：WO2010117970A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030020
申请日：2010-04-06
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , KOSHIISHI AKIRA , FISCHER ANDREAS
IPC分类号： H01L21/3065 , H05H1/34 , H05H1/36
CPC分类号： H01L21/2633 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32532 , H01J37/32577
摘要： A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.
摘要翻译：一种与气体一起使用的等离子体处理系统。等离子体处理系统包括第一电极，第二电极，气体输入端口，电源和无源电路。气体输入端口可操作以在第一电极和第二电极之间提供气体。电源可操作地从第一电极和第二电极之间的气体点燃等离子体。无源电路耦合到第二电极，并且被配置为调节第二电极的阻抗，电压电位和DC偏置电位中的一个或多个。无源射频电路包括与电感器并联布置的电容器。

6. 发明申请

WO2011026129A3 RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS 审中-公开
标题翻译：无线电频率（RF）地面返回安排
公开(公告)号：WO2011026129A3
公开(公告)日：2011-06-16
申请号：PCT/US2010047379
申请日：2010-08-31
申请人： LAM RES CORP , DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32807 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/32642
摘要： A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.
摘要翻译：提供射频（RF）接地返回装置，用于在处理基板期间为等离子体处理室的处理室内的RF电流提供低阻抗RF返回路径。 RF接地返回装置包括一组约束环，其被配置为围绕限制室体积，该限制室容积被配置为在衬底处理期间维持用于蚀刻衬底的等离子体。 RF接地返回装置还包括下电极支撑结构。 RF接地返回装置还包括RF接触部件，其在所述一组约束环和下部电极支撑结构之间提供RF接触，使得低阻抗RF返回路径有助于将RF电流返回到RF源。

7. 发明申请

WO2009006072A4 METHODS AND ARRANGEMENTS FOR PLASMA PROCESSING SYSTEM WITH TUNABLE CAPACITANCE 审中-公开
标题翻译：具有可调电容的等离子体处理系统的方法和装置
公开(公告)号：WO2009006072A4
公开(公告)日：2009-04-09
申请号：PCT/US2008067881
申请日：2008-06-23
申请人： LAM RES CORP , DHINDSA RAJINDER , MARAKHTANOV ALEXEI
发明人： DHINDSA RAJINDER , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065 , C23C16/00 , H01L21/00 , H01L21/30
CPC分类号： H01J37/21 , H01J37/32091 , H01J37/32642 , H01J37/32697
摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing RF power to the chuck. The method also includes providing a tunable capacitance arrangement. The tunable capacitance arrangement is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.
摘要翻译：提供了一种在等离子体处理室中处理衬底的方法。基板设置在卡盘上方并被边缘环包围。边缘环与卡盘电隔离。该方法包括向卡盘提供RF功率。该方法还包括提供可调谐电容布置。可调谐电容布置耦合到边缘环以提供与边缘环的RF耦合，导致边缘环具有边缘环电位。该方法还包括在等离子体处理室内产生等离子体以处理衬底。处理衬底，同时可调电容布置被配置为使得边缘环电位在处理衬底的同时能够动态地调谐到衬底的DC电位。

8. 发明申请

WO2010117971A2 GROUNDED CONFINEMENT RING HAVING LARGE SURFACE AREA 审中-公开
标题翻译：具有大面积区域的接地约束环
公开(公告)号：WO2010117971A2
公开(公告)日：2010-10-14
申请号：PCT/US2010030021
申请日：2010-04-06
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER
IPC分类号： H01L21/3065 , H05H1/24
CPC分类号： H01J37/32642 , H01J37/32422 , H01J37/32495 , H01J37/32623
摘要： A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are arranged such that the upper confinement chamber portion inner surface, the lower confinement chamber portion inner surface, the confinement ring inner surface and the electro-static chuck upper surface surround a plasma-forming space that is capable of receiving the material. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are operable to transform the material into a plasma when the electro-static chuck receives the driving signal. The confinement ring has a non-rectangular cross section.
摘要翻译：提供了与驱动器和材料供应源一起使用的晶片处理系统。驱动器可操作以产生驱动信号。材料供应源可操作以提供材料。晶片处理系统包括上限制室部分，下限制室部分，限制环和静电卡盘。上约束室部分具有上约束室部分内表面。下部限制室部分可拆卸地设置成与上部限制室部分接触。下部限制室部分具有下部限制室部分内表面。限制环可拆卸地设置成与上部限制室部分内表面和下部限制室部分内表面接触。限制环具有限制环内表面。静电卡盘具有静电卡盘上表面，并被布置成接收驱动信号。上部限制室部分，下部限制室部分，限制环和静电卡盘被布置成使得上部限制室部分内表面，下部限制室部分内表面，限制环内表面和电 - 静态卡盘上表面包围能够接收材料的等离子体形成空间。当静电卡盘接收到驱动信号时，上部限制室部分，下部限制室部分，限制环和静电卡盘可操作以将材料转换成等离子体。限制环具有非矩形截面。

9. 发明申请

WO2009076568A2 PLASMA UNCONFINEMENT SENSOR AND METHODS THEREOF 审中-公开
标题翻译：等离子体不连续传感器及其方法
公开(公告)号：WO2009076568A2
公开(公告)日：2009-06-18
申请号：PCT/US2008086495
申请日：2008-12-12
申请人： LAM RES CORP , BOOTH JEAN-PAUL , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , ALBAREDE LUC , JAFARIAN-TEHRANI SEYED JAFAR
发明人： BOOTH JEAN-PAUL , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , ALBAREDE LUC , JAFARIAN-TEHRANI SEYED JAFAR
IPC分类号： B23K10/00
CPC分类号： H01J37/32935
摘要： An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.
摘要翻译：提供了用于检测等离子体无约束事件的等离子体反应器内的布置。该装置包括传感器，其是在等离子体反应器内实现的基于电容的传感器。传感器在等离子体限制区域外部实现，并且被配置为当传感器暴露于与等离子体无约束事件相关联的等离子体时产生瞬态电流。传感器具有至少一个朝向与等离子体无约束事件相关联的等离子体的电绝缘层。该装置还包括检测电路，其与传感器电连接，用于将瞬态电流转换成瞬态电压信号，并用于处理瞬态电压信号以确定是否存在等离子体无约束事件。

10. 发明申请

WO2009006072A3 METHODS AND ARRANGEMENTS FOR PLASMA PROCESSING SYSTEM WITH TUNABLE CAPACITANCE 审中-公开
标题翻译：具有可调电容的等离子体处理系统的方法和装置
公开(公告)号：WO2009006072A3
公开(公告)日：2009-03-05
申请号：PCT/US2008067881
申请日：2008-06-23
申请人： LAM RES CORP , DHINDSA RAJINDER , MARAKHTANOV ALEXEI
发明人： DHINDSA RAJINDER , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065 , C23C16/00 , H01L21/00 , H01L21/30
CPC分类号： H01J37/21 , H01J37/32091 , H01J37/32642 , H01J37/32697
摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing RF power to the chuck. The method also includes providing a tunable capacitance arrangement. The tunable capacitance arrangement is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.
摘要翻译：提供了一种用于在等离子体处理室中处理衬底的方法。衬底设置在卡盘上方并由边缘环围绕。边缘环与卡盘电隔离。该方法包括向卡盘提供RF功率。该方法还包括提供可调电容布置。可调电容装置耦合到边缘环以提供到边缘环的RF耦合，导致边缘环具有边缘环电势。该方法还包括在等离子体处理室内产生等离子体以处理基板。衬底被处理，而可调谐电容布置被配置为使边缘环电位在处理衬底时动态地可调谐到衬底的DC电位。

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