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1. 发明申请

WO2007100528A3 INTEGRATED CAPACITIVE AND INDUCTIVE POWER SOURCES FOR A PLASMA ETCHING CHAMBER 审中-公开
标题翻译：用于等离子体蚀刻室的集成电容和电感电源
公开(公告)号：WO2007100528A3
公开(公告)日：2008-10-23
申请号：PCT/US2007004224
申请日：2007-02-16
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , TAKESHITA KENJI , MARAKHTANOV ALEXEI , FISCHER ANDREAS
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , TAKESHITA KENJI , MARAKHTANOV ALEXEI , FISCHER ANDREAS
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：概括地说，本发明通过提供改进的室清洁机构来满足这些需要。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

2. 发明专利

IL205779A APPARATUS FOR PRODUCING HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 未知
公开(公告)号：IL205779A
公开(公告)日：2011-08-31
申请号：IL20577910
申请日：2010-05-13
申请人： LI LUMIN , LAM RES CORP , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
发明人： LI LUMIN , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

3. 发明专利

IL173861A HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 未知
公开(公告)号：IL173861A
公开(公告)日：2010-11-30
申请号：IL17386106
申请日：2006-02-21
申请人： LI LUMIN , LAM RES CORP , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
发明人： LI LUMIN , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

4. 发明申请

WO2005022623B1 HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 审中-公开
标题翻译：使用各种频率的RF功率的调制的高比例比较
公开(公告)号：WO2005022623B1
公开(公告)日：2005-05-26
申请号：PCT/US2004025406
申请日：2004-08-06
申请人： LAM RES CORP , RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
发明人： RUSU CAMELIA , DHINDSA RAJINDER , HUDSON ERIC A , SRINIVASAN MUKUND , LI LUMIN , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed (404) in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided (408) to the process chamber. A first etch step is provided (412) where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided (416), where the first frequency, the second frequency, and the third frequency are at a different power setting. Optionally, a third etch step may also be provided (420).
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。衬底被放置在处理室中，处理室能够提供第一频率的RF功率，不同于第一频率的第二频率以及不同于第一和第二频率的第三频率。向处理室提供蚀刻剂气体（408）。提供第一蚀刻步骤（412），其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供第二蚀刻步骤（416），其中第一频率，第二频率和第三频率处于不同的功率设置。可选地，还可以提供第三蚀刻步骤（420）。

5. 发明申请

WO2005020264A2 MULTIPLE FREQUENCY PLASMA ETCH REACTOR 审中-公开
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：WO2005020264A2
公开(公告)日：2005-03-03
申请号：PCT/US2004027064
申请日：2004-08-20
申请人： LAM RES CORP , DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
发明人： DHINDSA RAJINDER , SADJADI REZA S M , KOZAKEVICH FELIX , TRUSSELL DAVE , LI LUMIN , LENZ ERIC , RUSU CAMELIA , SRINIVASAN MUKUND , EPPLER AARON , TIETZ JIM , MARKS JEFFREY
IPC分类号： H01J37/32 , H01J
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。腔室包括中心顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或者通过将至少一个等离子体激发频率传递到排除另一个等离子体激发频率的滤波器装置连接到参考电位频率。

6. 发明申请

WO0231859A3 STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY 审中-公开
标题翻译：用于等离子体加工均质的梯级上电极
公开(公告)号：WO0231859A3
公开(公告)日：2002-09-12
申请号：PCT/US0142611
申请日：2001-10-10
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
摘要翻译：一种具有前表面的等离子体放电电极，其中心部分包括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

7. 发明申请

WO2007098071A2 PROCESS TUNING GAS INJECTION FROM THE SUBSTRATE EDGE 审中-公开
标题翻译：从底板边缘处理气体注入气体
公开(公告)号：WO2007098071A2
公开(公告)日：2007-08-30
申请号：PCT/US2007004225
申请日：2007-02-16
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00 , H01L21/302
CPC分类号： H01L21/67069 , C23C16/45521 , C23C16/4585 , H01J37/3244 , H01L21/68735
摘要： Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In an exemplary embodiment, a plasma processing chamber is provided. The plasma processing chamber includes a substrate support configured to receive a substrate. The plasma processing chamber also includes an annular ring having a plurality of gas channels defined therein. The annular ring is proximate to an outer edge of the substrate support and the annular ring is coupled to the substrate support. The plurality of gas channels is connected to an edge gas plenum surrounding the substrate support. The edge gas plenum is connected to a central gas plenum disposed within and near the center of the substrate support through a plurality of gas supply channels.
摘要翻译：一般来说，本发明的实施例提供了改进的等离子体处理机构，装置和方法，以增加基板的非常边缘处的工艺均匀性。在示例性实施例中，提供等离子体处理室。等离子体处理室包括被配置为接收衬底的衬底支撑件。等离子体处理室还包括具有限定在其中的多个气体通道的环形环。环形环靠近衬底支撑件的外边缘并且环形环耦合到衬底支撑件。多个气体通道连接到围绕衬底支撑件的边缘气体充气室。边缘气体增压室通过多个气体供应通道连接到设置在基板支撑件的中心内和附近的中心气室。

8. 发明申请

WO0231859A9 STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY 审中-公开
标题翻译：用于等离子体加工均质的梯级上电极
公开(公告)号：WO0231859A9
公开(公告)日：2003-05-22
申请号：PCT/US0142611
申请日：2001-10-10
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , EPPLER AARON , LENZ ERIC
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32009 , H01J37/3244 , Y10T156/10
摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
摘要翻译：一种具有前表面的等离子体放电电极，其中心部分包括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

9. 发明申请

WO03015123B1 DUAL FREQUENCY PLASMA ETCH REACTOR WITH INDEPENDENT PLASMA DENSITY/CHEMISTRY AND ION ENERGY CONTROL 审中-公开
标题翻译：具有独立等离子体密度/化学和离子能量控制的双频等离子体蚀刻反应器
公开(公告)号：WO03015123B1
公开(公告)日：2003-11-20
申请号：PCT/US0225223
申请日：2002-08-08
申请人： LAM RES CORP , DHINDSA RAJINDER , SRINIVASAN MUKUND , LENZ ERIC , LI LUMIN
发明人： DHINDSA RAJINDER , SRINIVASAN MUKUND , LENZ ERIC , LI LUMIN
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , H01J37/32082 , Y10S156/916
摘要： A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources, The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.
摘要翻译：用于处理工件的真空等离子体室包括用于与腔室中的气体电耦合并分别连接到第一和第二相对较高和低频RF源的第一和第二电极。腔室包括参考电位的壁和等离子体限制区域与墙壁隔开。连接到源极和电极的滤波器装置使来自第一源的电流流向第一电极，防止电流从第一电源到第二电极和第二电源的大量流动，并使电流从第二电源到流到第一和第二电极并且防止电流从第二源到第一源的实质性流动。

10. 发明申请

WO2004102638A3 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A3
公开(公告)日：2005-07-28
申请号：PCT/US2004013707
申请日：2004-04-29
申请人： LAM RES CORP , LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
发明人： LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
IPC分类号： H01J37/32
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided, comprising a capacitively coupled process chamber (100), a gas source (110), a first (104) and a second electrode (108) within the process chamber. A first radio frequency power source (144) is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source (148) is electrically connected to at least one of the first and second electrodes. A first modulation control (133) is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的装置，其包括处理室内的电容耦合处理室（100），气体源（110），第一（104）和第二电极（108）。第一射频电源（144）电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源（148）电连接到第一和第二电极中的至少一个。第一调制控制（133）连接到第一射频电源，以提供对第一射频电源的受控调制。

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