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1. 发明申请

WO2011026129A3 RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS 审中-公开
标题翻译：无线电频率（RF）地面返回安排
公开(公告)号：WO2011026129A3
公开(公告)日：2011-06-16
申请号：PCT/US2010047379
申请日：2010-08-31
申请人： LAM RES CORP , DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32807 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/32642
摘要： A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.
摘要翻译：提供射频（RF）接地返回装置，用于在处理基板期间为等离子体处理室的处理室内的RF电流提供低阻抗RF返回路径。 RF接地返回装置包括一组约束环，其被配置为围绕限制室体积，该限制室容积被配置为在衬底处理期间维持用于蚀刻衬底的等离子体。 RF接地返回装置还包括下电极支撑结构。 RF接地返回装置还包括RF接触部件，其在所述一组约束环和下部电极支撑结构之间提供RF接触，使得低阻抗RF返回路径有助于将RF电流返回到RF源。

2. 发明申请

WO2011026126A2 A MULTI-PERIPHERAL RING ARRANGEMENT FOR PERFORMING PLASMA CONFINEMENT 审中-公开
标题翻译：用于执行等离子体制约的多外环配置
公开(公告)号：WO2011026126A2
公开(公告)日：2011-03-03
申请号：PCT/US2010047373
申请日：2010-08-31
申请人： LAM RES CORP , DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
IPC分类号： H05H1/46 , C23C16/50 , H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32623
摘要： An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume.
摘要翻译：提供了一种用于在衬底处理期间在处理室内执行等离子体约束的装置。该装置包括邻近次级外围环的第一外围环。第一外围环围绕维持等离子体以用于蚀刻衬底的限制室体积。第一周边环包括用于从受限制室容积排出经处理的副产物气体的第一多个槽。第二周边环包括第二多个槽，其位于第一多个槽的旁边，使得第二多个槽不与第一多个槽重叠，从而防止从限制室内的直接视线体积到外部室容积（第一外围环的外部的区域）。该布置还包括连接两个环的歧管，以提供用于从被限制的室容积排出经处理的副产物气体的路线。

3. 发明专利

SG10201405042QA A MULTI-PERIPHERAL RING ARRANGEMENT FOR PERFORMING PLASMA CONFINEMENT 未知
公开(公告)号：SG10201405042QA
公开(公告)日：2014-10-30
申请号：SG10201405042Q
申请日：2010-08-31
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI

4. 发明专利

SG178286A1 RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS 未知
公开(公告)号：SG178286A1
公开(公告)日：2012-03-29
申请号：SG2012008280
申请日：2010-08-31
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
摘要： A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.

5. 发明专利

SG178288A1 A MULTI-PERIPHERAL RING ARRANGEMENT FOR PERFORMING PLASMA CONFINEMENT 未知
公开(公告)号：SG178288A1
公开(公告)日：2012-03-29
申请号：SG2012008314
申请日：2010-08-31
申请人： LAM RES CORP
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
摘要： An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume.

6. 发明专利

SG170717A1 HOT EDGE RING WITH SLOPED UPPER SURFACE 未知
公开(公告)号：SG170717A1
公开(公告)日：2011-05-30
申请号：SG2010079754
申请日：2010-10-27
申请人： LAM RES CORP
发明人： KOSHISHI AKIRA , MANI SATHYA , BHATTACHARYYA GAUTAM , BETTENCOURT GREGORY R , CHAO SANDY
摘要： A hot edge ring with extended lifetime comprises an annular body having a sloped upper surface. The hot edge ring includes a step underlying an outer edge of a semiconductor substrate supported in a plasma processing chamber wherein plasma is used to process the substrate. The step includes a vertical surface which surrounds the outer edge of the substrate and the sloped upper surface extends upwardly and outwardly from the upper periphery of the vertical surface.

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