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1. 发明授权

US08076686B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08076686B2
公开(公告)日：2011-12-13
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

2. 发明授权

US08008680B2 Light-emitting diode device and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US08008680B2
公开(公告)日：2011-08-30
申请号：US12887199
申请日：2010-09-21
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译：提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构，第一电极和第二电极。衬底上的第一半导体层具有第一部分和第二部分。有源层和第二半导体层随后设置在第一部分上。第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

3. 发明申请

US20090065794A1 Light emitting diode device and manufacturing method therof 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20090065794A1
公开(公告)日：2009-03-12
申请号：US12230887
申请日：2008-09-08
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译：提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构，第一电极和第二电极。衬底上的第一半导体层具有第一部分和第二部分。有源层和第二半导体层随后设置在第一部分上。第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

4. 发明授权

US07821026B2 Light emitting diode device and manufacturing method therof 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US07821026B2
公开(公告)日：2010-10-26
申请号：US12230887
申请日：2008-09-08
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译：提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构，第一电极和第二电极。衬底上的第一半导体层具有第一部分和第二部分。有源层和第二半导体层随后设置在第一部分上。第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

5. 发明申请

US20090224272A1 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20090224272A1
公开(公告)日：2009-09-10
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

6. 发明申请

US20080157108A1 Light-Emitting Diode and Method for Manufacturing the Same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080157108A1
公开(公告)日：2008-07-03
申请号：US11669576
申请日：2007-01-31
申请人： Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
发明人： Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/0062 , H01L33/12
摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises a substrate, a reflective structure, a buffer layer and an illuminant epitaxial structure. The reflective structure is deposed on a surface of the substrate, wherein the reflective structure includes a plurality of openings set therein to define the reflective structure as a regular pattern structure and to expose a portion of the surface of the substrate. The buffer layer is deposed on the reflective structure and the exposed portion of the surface of the substrate, and fills the openings. The illuminant epitaxial structure is deposed on the buffer layer.
摘要翻译：描述了一种发光二极管（LED）及其制造方法。发光二极管包括衬底，反射结构，缓冲层和发光体外延结构。反射结构被放置在基板的表面上，其中反射结构包括设置在其中的多个开口，以将反射结构限定为规则的图案结构并且暴露基板表面的一部分。缓冲层被放置在反射结构和衬底的表面的暴露部分上，并填充开口。光源外延结构被放在缓冲层上。

7. 发明申请

US20100029035A1 METHOD OF MANUFACTURING A PHOTOELECTRONIC DEVICE 有权
标题翻译：制造光电器件的方法
公开(公告)号：US20100029035A1
公开(公告)日：2010-02-04
申请号：US12511812
申请日：2009-07-29
申请人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
发明人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
IPC分类号： H01L21/28
CPC分类号： H01L33/0095 , H01L31/022425 , H01L33/44 , H01S5/0425 , Y02E10/50
摘要： This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.
摘要翻译：本申请公开了一种制造光电子器件的方法，包括以下步骤：提供半导体堆叠层，通过印刷技术在半导体堆叠层上形成至少一种金属粘合剂，通过加热金属粘合剂以除去金属中的溶剂形成电极粘合剂，其中在电极和半导体叠层之间形成欧姆接触。

8. 发明授权

US07888162B2 Method of manufacturing a photoelectronic device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US07888162B2
公开(公告)日：2011-02-15
申请号：US12511812
申请日：2009-07-29
申请人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
发明人： Yu-Ling Chin , Li-Pin Jou , Yu-Chih Yang , Yu-Cheng Yang , Wei-Shou Chen , Cheng-Ta Kuo
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L33/0095 , H01L31/022425 , H01L33/44 , H01S5/0425 , Y02E10/50
摘要： This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.
摘要翻译：本申请公开了一种制造光电子器件的方法，包括以下步骤：提供半导体堆叠层，通过印刷技术在半导体堆叠层上形成至少一种金属粘合剂，通过加热金属粘合剂以除去金属中的溶剂形成电极粘合剂，其中在电极和半导体叠层之间形成欧姆接触。

9. 发明申请

US20080191233A1 Light-emitting diode and method for manufacturing the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080191233A1
公开(公告)日：2008-08-14
申请号：US12000040
申请日：2007-12-07
申请人： Yu-Cheng Yang , Cheng-Ta Kuo , Sen-Pin Huang , Li-Ping Jou
发明人： Yu-Cheng Yang , Cheng-Ta Kuo , Sen-Pin Huang , Li-Ping Jou
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A light-emitting diode and method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface on opposite sides; a reflector structure comprising a conductive reflector layer bonding to the first surface of the conductive substrate and a conductive distributed Bragg reflector (DBR) structure stacked on the conductive reflector layer; an illuminant epitaxial structure disposed on the reflector structure; a first electrode disposed on a portion of the illuminant epitaxial structure; and a second electrode bonded to the second surface of the conductive substrate.
摘要翻译：描述了一种发光二极管及其制造方法。发光二极管包括：导电基板，包括第一表面和相对侧上的第二表面; 反射器结构，其包括结合到所述导电基板的所述第一表面的导电反射器层和层叠在所述导电反射器层上的导电分布布拉格反射器（DBR）结构; 设置在反射器结构上的光源外延结构; 设置在所述发光体外延结构的一部分上的第一电极; 以及结合到导电基板的第二表面的第二电极。

10. 发明申请

US20050168739A1 [TOOL AND PROCESS FOR REMOVING PARTICLES FROM RETICLE] 失效
标题翻译： [从物品中除去颗粒的工具和方法]
公开(公告)号：US20050168739A1
公开(公告)日：2005-08-04
申请号：US10709335
申请日：2004-04-29
申请人： Po-Ching Lin , Yu-Cheng Yang
发明人： Po-Ching Lin , Yu-Cheng Yang
IPC分类号： G01N21/00 , G03F1/00
CPC分类号： G03F1/82
摘要： A tool and a process for removing particles from a reticle are described. The tool is disposed in front of a pellicle particle detector, including at least a gas spray member toward a surface of the reticle for removing particles and a supporting member supporting the gas spray member in front of the pellicle particle detector. The supporting member can further fix the tool onto the pellicle particle detector. In the particle removing process, when particles are detected on the reticle, the tool is turned on and the reticle is loaded into the pellicle particle detector through the gas spray member in order to remove the particles from the reticle before the pellicle particle detector detects the particles.
摘要翻译：描述了从掩模版中去除颗粒的工具和工艺。该工具设置在防护薄膜颗粒检测器的前面，包括至少一个气体喷射构件朝向用于除去颗粒的掩模版的表面，以及支撑构件，其支撑防尘薄膜组件前端的气体喷射构件。支撑构件可以进一步将工具固定到防护薄膜检测器上。在颗粒去除过程中，当在掩模版上检测到颗粒时，打开工具，并通过气体喷射构件将掩模版装载到防护薄膜颗粒检测器中，以便在防护薄膜组件检测器检测到粒子。

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