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1. 发明授权

US09159881B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09159881B2
公开(公告)日：2015-10-13
申请号：US13596528
申请日：2012-08-28
申请人： Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yi-Wen Ku , Hung-Che Chen , Chih-Nan Lin
发明人： Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yi-Wen Ku , Hung-Che Chen , Chih-Nan Lin
IPC分类号： H01L33/38 , H01L33/42 , H01L33/10 , H01L33/40 , H01L33/44
CPC分类号： H01L33/405 , H01L33/385 , H01L33/42 , H01L33/44
摘要： Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.
摘要翻译：公开了一种发光器件，包括：半导体叠层层; 半导体堆叠层上的反射层; 第一缓冲层，包括在反射层上包含金属元素和非金属元素的化合物; 第一电极; 以及设置在第一缓冲层和第一电极之间的电绝缘层。

2. 发明授权

US08598614B2 Light-emitting devices 有权
公开(公告)号：US08598614B2
公开(公告)日：2013-12-03
申请号：US13221369
申请日：2011-08-30
申请人： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
发明人： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC分类号： H01L33/60
CPC分类号： H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

3. 发明授权

US08188505B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08188505B2
公开(公告)日：2012-05-29
申请号：US12292593
申请日：2008-11-21
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104μm2 and 6.2×104 μm2.
摘要翻译：发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中沟槽，并且在第二半导体层上形成第二导电结构。第一导电结构包括彼此电接触的第一电极和第一焊盘。第二导电结构包括彼此电接触的第二电极和第二焊盘。此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×104μm2和6.2×104μm2之间。

4. 发明申请

US20090224272A1 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20090224272A1
公开(公告)日：2009-09-10
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

5. 发明授权

US09035329B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09035329B2
公开(公告)日：2015-05-19
申请号：US13048357
申请日：2011-03-15
申请人： Chao-Hsing Chen , Chien-Kai Chung , Hui-chen Yeh , Yi-Wen Ku
发明人： Chao-Hsing Chen , Chien-Kai Chung , Hui-chen Yeh , Yi-Wen Ku
IPC分类号： H01L33/00 , H01L25/075 , H01L27/15 , H01L33/38 , H01L33/62
CPC分类号： H01L25/0753 , H01L27/156 , H01L33/385 , H01L33/62 , H01L2224/24
摘要： The light-emitting device having an equivalent circuit, includes at least four terminals, numbered from first terminal to fourth terminal, for electrical power feeding; a first light-emitting diode, arranged between the first terminal and the second terminal, configured to not emit light when a voltage is applied between the second terminal and one of the third terminal and the fourth terminal, and configured to emit light when a. voltage is applied between the first terminal and one of the third terminal and the four the terminal; and a second light-emitting diode, arranged between the third terminal and the fourth terminal, and configured to not emit light when the voltage is applied between the third terminal and one of the first terminal and the second terminal and configured to emit light when a voltage is applied between the fourth terminal and one of the first terminal and the second terminal.
摘要翻译：具有等效电路的发光装置包括从第一端子到第四端子编号的至少四个端子，用于供电; 布置在所述第一端子和所述第二端子之间的第一发光二极管被配置为当在所述第二端子和所述第三端子和所述第四端子中的一个之间施加电压时不发光，并且被配置为当a。在第一端子和第三端子中的一个端子以及四个端子之间施加电压; 以及第二发光二极管，其配置在所述第三端子与所述第四端子之间，并且被配置为当所述第三端子与所述第一端子和所述第二端子中的一者之间施加电压时不发光，并且被配置为当第在第四端子与第一端子和第二端子之一之间施加电压。

6. 发明申请

US20120049227A1 LIGHT-EMITTING DEVICES 有权
标题翻译：发光装置
公开(公告)号：US20120049227A1
公开(公告)日：2012-03-01
申请号：US13221369
申请日：2011-08-30
申请人： Chao-Hsing CHEN , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
发明人： Chao-Hsing CHEN , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC分类号： H01L33/60
CPC分类号： H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.
摘要翻译：本申请的实施例的发光装置包括设置有第一主侧，第二主侧和有源层的半导体层序列; 形成在半导体层序列中的倾斜沟槽，具有靠近第二主侧的顶端，底端以及连接顶端和底端的内侧壁。在该实施例中，内侧壁是倾斜表面。发光装置还包括设置在斜面沟槽和第二主侧的内侧壁上的电介质层; 形成在所述电介质层上的第一金属层; 载体基板; 以及连接载体衬底和半导体层序列的第一连接层。

7. 发明申请

US20090140280A1 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US20090140280A1
公开(公告)日：2009-06-04
申请号：US12292593
申请日：2008-11-21
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm and 6.2×104 μm.
摘要翻译：发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中沟槽，并且在第二半导体层上形成第二导电结构。第一导电结构包括彼此电接触的第一电极和第一焊盘。第二导电结构包括彼此电接触的第二电极和第二焊盘。此外，第一垫和第二垫中的至少一个的面积在1.5×10 4 mum到6.2×10 4 m之间。

8. 外观设计

USD687396S1 Light-emitting diode array 有权
公开(公告)号：USD687396S1
公开(公告)日：2013-08-06
申请号：US29431404
申请日：2012-09-06
申请人： Chao-Hsing Chen , Chien-Fu Shen , Tsun-Kai Ko , Yi-Wen Ku
设计人： Chao-Hsing Chen , Chien-Fu Shen , Tsun-Kai Ko , Yi-Wen Ku

9. 发明授权

US08823039B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08823039B2
公开(公告)日：2014-09-02
申请号：US13459342
申请日：2012-04-30
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
摘要翻译：本公开公开了一种发光装置。发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

10. 发明申请

US20120211794A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120211794A1
公开(公告)日：2012-08-23
申请号：US13459342
申请日：2012-04-30
申请人： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
摘要翻译：本公开公开了一种发光装置。发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

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