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1. 发明申请

US20090224272A1 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20090224272A1
公开(公告)日：2009-09-10
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

2. 发明授权

US08076686B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08076686B2
公开(公告)日：2011-12-13
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

3. 发明申请

US20110312113A1 LIGHT-EMITTING DIODE STRUCTURE WITH ELECTRODE PADS OF SIMILAR SURFACE ROUGHNESS AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：具有类似表面粗糙度的电极垫的发光二极管结构及其制造方法
公开(公告)号：US20110312113A1
公开(公告)日：2011-12-22
申请号：US13221908
申请日：2011-08-31
申请人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yen , Chien-Kai Chung
发明人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yen , Chien-Kai Chung
IPC分类号： H01L33/20
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382 , H01L2933/0016
摘要： A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.
摘要翻译：公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题从第一和第二电极焊盘。

4. 发明申请

US20080157097A1 Light-emitting diode structure and method for manufacturing the same 审中-公开
标题翻译：发光二极管结构及其制造方法
公开(公告)号：US20080157097A1
公开(公告)日：2008-07-03
申请号：US11699942
申请日：2007-01-30
申请人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yeh , Chien-Kai Chung
发明人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yeh , Chien-Kai Chung
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382 , H01L2933/0016
摘要： A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.
摘要翻译：公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题从第一和第二电极焊盘。

5. 发明授权

US09231158B2 Light-emitting diode structure with electrode pads of similar surface roughness and method for manufacturing the same 有权
标题翻译：具有类似表面粗糙度的电极焊盘的发光二极管结构及其制造方法
公开(公告)号：US09231158B2
公开(公告)日：2016-01-05
申请号：US13221908
申请日：2011-08-31
申请人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yen , Chien-Kai Chung
发明人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yen , Chien-Kai Chung
IPC分类号： H01L21/00 , H01L33/38 , H01L33/20
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382 , H01L2933/0016
摘要： A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.
摘要翻译：公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题从第一和第二电极焊盘。

6. 发明授权

US08008680B2 Light-emitting diode device and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US08008680B2
公开(公告)日：2011-08-30
申请号：US12887199
申请日：2010-09-21
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译：提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构，第一电极和第二电极。衬底上的第一半导体层具有第一部分和第二部分。有源层和第二半导体层随后设置在第一部分上。第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

7. 发明申请

US20090065794A1 Light emitting diode device and manufacturing method therof 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20090065794A1
公开(公告)日：2009-03-12
申请号：US12230887
申请日：2008-09-08
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译：提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构，第一电极和第二电极。衬底上的第一半导体层具有第一部分和第二部分。有源层和第二半导体层随后设置在第一部分上。第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

8. 发明授权

US07821026B2 Light emitting diode device and manufacturing method therof 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US07821026B2
公开(公告)日：2010-10-26
申请号：US12230887
申请日：2008-09-08
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译：提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构，第一电极和第二电极。衬底上的第一半导体层具有第一部分和第二部分。有源层和第二半导体层随后设置在第一部分上。第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

9. 发明申请

US20080157108A1 Light-Emitting Diode and Method for Manufacturing the Same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080157108A1
公开(公告)日：2008-07-03
申请号：US11669576
申请日：2007-01-31
申请人： Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
发明人： Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/0062 , H01L33/12
摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises a substrate, a reflective structure, a buffer layer and an illuminant epitaxial structure. The reflective structure is deposed on a surface of the substrate, wherein the reflective structure includes a plurality of openings set therein to define the reflective structure as a regular pattern structure and to expose a portion of the surface of the substrate. The buffer layer is deposed on the reflective structure and the exposed portion of the surface of the substrate, and fills the openings. The illuminant epitaxial structure is deposed on the buffer layer.
摘要翻译：描述了一种发光二极管（LED）及其制造方法。发光二极管包括衬底，反射结构，缓冲层和发光体外延结构。反射结构被放置在基板的表面上，其中反射结构包括设置在其中的多个开口，以将反射结构限定为规则的图案结构并且暴露基板表面的一部分。缓冲层被放置在反射结构和衬底的表面的暴露部分上，并填充开口。光源外延结构被放在缓冲层上。

10. 发明申请

US20120305959A1 LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US20120305959A1
公开(公告)日：2012-12-06
申请号：US13241667
申请日：2011-09-23
申请人： Kuo-Hui Yu , Chang-Hsin Chu , Chi-Lung Wu , Shin-Jia Chiou , Chung-Hsin Lin , Jui-Chun Chang
发明人： Kuo-Hui Yu , Chang-Hsin Chu , Chi-Lung Wu , Shin-Jia Chiou , Chung-Hsin Lin , Jui-Chun Chang
IPC分类号： H01L33/58 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0756 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/16145 , H01L2224/48091 , H01L2224/48463 , H01L2924/0002 , H01L2924/19107 , H01L2933/0016 , H01L2924/00014
摘要： A light-emitting diode (LED) device, includes a substrate, having a first and a second surfaces, a first bonding layer, disposed on the first surface, a first epitaxial structure, having a third and a fourth surfaces and comprising a first and a second groove, wherein the first epitaxial structure comprises a second electrical type semiconductor layer, an active layer and a first electrical type semiconductor layer sequentially stacked on the first bonding layer, and the first groove extends from the fourth surface to the first electrical type semiconductor layer via the active layer, the second groove extends from the fourth surface to the third surface, a first electrical type conductive branch, a first electrical type electrode layer, an insulating layer, filled in the first and the second grooves, and a second electrical type electrode layer, electrically connected to the second electrical type semiconductor layer.
摘要翻译：发光二极管（LED）装置包括具有第一和第二表面的基板，设置在第一表面上的第一结合层，第一外延结构，具有第三和第四表面，并且包括第一和第二表面第二沟槽，其中所述第一外延结构包括依次层叠在所述第一接合层上的第二电型半导体层，有源层和第一电型半导体层，并且所述第一沟槽从所述第四表面延伸到所述第一电型半导体层，所述第二凹槽从所述第四表面延伸到所述第三表面，填充在所述第一和第二凹槽中的第一电气型导电分支，第一电气型电极层，绝缘层，以及第二电气电连接到第二电气型半导体层。

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