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1. 发明申请

US20080157108A1 Light-Emitting Diode and Method for Manufacturing the Same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080157108A1
公开(公告)日：2008-07-03
申请号：US11669576
申请日：2007-01-31
申请人： Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
发明人： Kuo-Hui Yu , Yung-Hsin Shie , Cheng-Ta Kuo , Yu-Cheng Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/0062 , H01L33/12
摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises a substrate, a reflective structure, a buffer layer and an illuminant epitaxial structure. The reflective structure is deposed on a surface of the substrate, wherein the reflective structure includes a plurality of openings set therein to define the reflective structure as a regular pattern structure and to expose a portion of the surface of the substrate. The buffer layer is deposed on the reflective structure and the exposed portion of the surface of the substrate, and fills the openings. The illuminant epitaxial structure is deposed on the buffer layer.
摘要翻译：描述了一种发光二极管（LED）及其制造方法。发光二极管包括衬底，反射结构，缓冲层和发光体外延结构。反射结构被放置在基板的表面上，其中反射结构包括设置在其中的多个开口，以将反射结构限定为规则的图案结构并且暴露基板表面的一部分。缓冲层被放置在反射结构和衬底的表面的暴露部分上，并填充开口。光源外延结构被放在缓冲层上。

2. 发明授权

US06847046B1 Light-emitting device and method for manufacturing the same 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US06847046B1
公开(公告)日：2005-01-25
申请号：US10748256
申请日：2003-12-31
申请人： Shih-Chen Wei , Yung-Hsin Shie , Wen-Liang Li , Shi-Ming Chen
发明人： Shih-Chen Wei , Yung-Hsin Shie , Wen-Liang Li , Shi-Ming Chen
IPC分类号： H01L21/20 , H01L29/15 , H01L29/20 , H01L33/00 , H01L33/04 , H01L33/12 , H01L29/06
CPC分类号： H01L29/155 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007 , H01L33/04 , H01L33/12
摘要： A light-emitting device and a method for manufacturing the same are described, by forming a SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer, Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) can be n-type, p-type or undoped.
摘要翻译：通过形成SiN / Al1-x-yInxGayN（0≤x≤1,0<= y <= 1，x + y <= 1）超晶格来描述发光器件及其制造方法在衬底和未掺杂GaN之间的层作为缓冲层，以便减小缓冲层的位错密度。在SiN / Al1-x-yInxGayN（0≤x≤1,0<= y <= 1，x + y <= 1）超晶格层中，Al1-x-yInxGayN（0≤x≤1， 0 <= y <= 1，x + y <= 1）可以是n型，p型或未掺杂。

3. 发明申请

US20120017832A1 VAPOR DEPOSITION APPARATUS AND SUSCEPTOR 审中-公开
标题翻译：蒸气沉积装置和SUSCEPTOR
公开(公告)号：US20120017832A1
公开(公告)日：2012-01-26
申请号：US13010598
申请日：2011-01-20
申请人： Wei-Cheng CHEN , Zong-Lin Lee , Kung-Ming Liang , Yung-Hsin Shie
发明人： Wei-Cheng CHEN , Zong-Lin Lee , Kung-Ming Liang , Yung-Hsin Shie
IPC分类号： C23C16/06 , C23C16/511 , C23C16/448
CPC分类号： C23C16/4584
摘要： A vapor deposition apparatus includes a susceptor, a gas supply unit, a heating unit and a rotation unit. The susceptor has a first substrate-holding portion and a second substrate-holding portion. The first substrate-holding portion has a first depth, and the second substrate-holding portion has a second depth that is larger than the first depth. The gas supply unit supplies precursors to the susceptor. The heating unit is used to heat the susceptor. The rotation unit can rotate the susceptor so that the heating unit can uniformly heat the susceptor. Because the second depth is larger than the first depth, the substrate held in the second substrate-holding portion can not directly contact the susceptor with a higher temperature and thus its temperature is lower than the second substrate-holding portion, so as to maintain the uniformity of the properties of the manufactured chips.
摘要翻译：气相沉积设备包括基座，气体供应单元，加热单元和旋转单元。基座具有第一基板保持部和第二基板保持部。第一基板保持部分具有第一深度，并且第二基板保持部分具有大于第一深度的第二深度。气体供应单元向基座提供前体。加热单元用于加热基座。旋转单元可以旋转基座，使得加热单元可以均匀地加热基座。由于第二深度大于第一深度，所以保持在第二基板保持部中的基板不能与较高温度的基座直接接触，因此其温度低于第二基板保持部，以便保持所制造的芯片的性能的均匀性。

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