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1. 发明授权

US08277286B2 Slurry dispenser for chemical mechanical polishing (CMP) apparatus and method 有权
标题翻译：用于化学机械抛光（CMP）设备和方法的浆料分配器
公开(公告)号：US08277286B2
公开(公告)日：2012-10-02
申请号：US12370662
申请日：2009-02-13
申请人： Kun-Ku Hung , Zin-Chang Wei , Huang Soon Kang , Chyi-Shyuan Chern
发明人： Kun-Ku Hung , Zin-Chang Wei , Huang Soon Kang , Chyi-Shyuan Chern
IPC分类号： B24B1/00 , B24B57/02 , B24B29/00
CPC分类号： B24B57/02 , B24B37/04
摘要： A chemical mechanical polishing method and apparatus provides a deformable, telescoping slurry dispenser arm coupled to a dispenser head that may be arcuate in shape and may also be a bendable telescoping member that can be adjusted to vary the number of slurry dispenser ports and the degree of curvature of the dispenser head. The dispenser arm may additionally include slurry dispenser ports therein. The dispenser arm may advantageously be formed of a plurality of nested tubes that are slidable with respect to one another. The adjustable dispenser arm may pivot about a pivot point and can be variously positioned to accommodate different sized polishing pads used to polish substrates of different dimensions and the bendable, telescoping slurry dispenser arm and dispenser head provide uniform slurry distribution to any of various wafer polishing locations, effective slurry usage and uniform polishing profiles in each case.
摘要翻译：化学机械抛光方法和装置提供了可变形的，可伸缩的浆料分配器臂，其联接到分配器头部，其可以是弓形的形状，并且还可以是可弯曲的伸缩构件，其可以被调节以改变浆料分配器端口的数量和分配头的曲率。分配器臂可以另外包括其中的浆料分配器端口。分配器臂可以有利地由可相对于彼此滑动的多个嵌套管形成。可调节的分配器臂可围绕枢转点枢转并且可以被不同地定位以适应用于抛光不同尺寸的基板的不同尺寸的抛光垫，并且可弯曲的可伸缩浆料分配器臂和分配器头部向各种晶片抛光位置，有效的浆料使用和均匀的抛光轮廓在每种情况下。

2. 发明申请

US20100210189A1 SLURRY DISPENSER FOR CHEMICAL MECHANICAL POLISHING (CMP) APPARATUS AND METHOD 有权
标题翻译：化学机械抛光（CMP）装置和方法的浆料分配器
公开(公告)号：US20100210189A1
公开(公告)日：2010-08-19
申请号：US12370662
申请日：2009-02-13
申请人： Kun-Ku Hung , Zin-Chang Wei , Huang Soon Kang , Chyi-Shyuan Chern
发明人： Kun-Ku Hung , Zin-Chang Wei , Huang Soon Kang , Chyi-Shyuan Chern
IPC分类号： B24B57/02 , B24B7/20 , B24B29/00
CPC分类号： B24B57/02 , B24B37/04
摘要： A chemical mechanical polishing method and apparatus provides a deformable, telescoping slurry dispenser arm coupled to a dispenser head that may be arcuate in shape and may also be a bendable telescoping member that can be adjusted to vary the number of slurry dispenser ports and the degree of curvature of the dispenser head. The dispenser arm may additionally include slurry dispenser ports therein. The dispenser arm may advantageously be formed of a plurality of nested tubes that are slidable with respect to one another. The adjustable dispenser arm may pivot about a pivot point and can be variously positioned to accommodate different sized polishing pads used to polish substrates of different dimensions and the bendable, telescoping slurry dispenser arm and dispenser head provide uniform slurry distribution to any of various wafer polishing locations, effective slurry usage and uniform polishing profiles in each case.
摘要翻译：化学机械抛光方法和装置提供了可变形的，可伸缩的浆料分配器臂，其联接到分配器头部，其可以是弓形的形状，并且还可以是可弯曲的伸缩构件，其可以被调节以改变浆料分配器端口的数量和分配头的曲率。分配器臂可以另外包括其中的浆料分配器端口。分配器臂可以有利地由可相对于彼此滑动的多个嵌套管形成。可调节的分配器臂可围绕枢转点枢转并且可以被不同地定位以适应用于抛光不同尺寸的基板的不同尺寸的抛光垫，并且可弯曲的可伸缩浆料分配器臂和分配器头部向各种晶片抛光位置，有效的浆料使用和均匀的抛光轮廓在每种情况下。

3. 发明申请

US20100210041A1 MULTI-ZONE TEMPERATURE CONTROL FOR SEMICONDUCTOR WAFER 有权
标题翻译：用于半导体波形的多区温度控制
公开(公告)号：US20100210041A1
公开(公告)日：2010-08-19
申请号：US12370746
申请日：2009-02-13
申请人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
发明人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
IPC分类号： H01L21/66 , H01L21/306 , H01L21/26 , H01L21/265
CPC分类号： H01L22/20 , H01L21/67248 , H01L21/67253 , H01L22/12
摘要： An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.
摘要翻译：一种装置包括被配置为执行离子注入工艺的处理室。在处理室内设有冷却台板或静电吸盘。冷却台板或静电卡盘构造成支撑半导体晶片。冷却台板或静电卡盘具有多个温度区域。每个温度区域包括在冷却压板或静电卡盘内或附近的至少一个流体导管。提供至少两个冷却剂源，每个冷却剂源流体耦合到相应的一个流体管道，并且构造成在离子注入过程期间将分别不同的冷却剂供应到多个温度区中的相应的一个温度区。冷却剂源分别包括不同的冷却或制冷装置。

4. 发明授权

US07732344B1 High selectivity etching process for metal gate N/P patterning 失效
标题翻译：金属栅N / P图案化的高选择性蚀刻工艺
公开(公告)号：US07732344B1
公开(公告)日：2010-06-08
申请号：US12478922
申请日：2009-06-05
申请人： Fang Wen Tsai , Matt Yeh , Ming-Jun Wang , Shun Wu Lin , Chi-Chun Chen , Zin-Chang Wei , Chyi-Shyuan Chern
发明人： Fang Wen Tsai , Matt Yeh , Ming-Jun Wang , Shun Wu Lin , Chi-Chun Chen , Zin-Chang Wei , Chyi-Shyuan Chern
IPC分类号： H01L21/302
CPC分类号： H01L21/823842 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545 , Y10S438/942
摘要： A method for fabricating a integrated circuit with improved performance is disclosed. The method comprises providing a substrate; forming a hard mask layer over the substrate; forming protected portions and unprotected portions of the hard mask layer; performing a first etching process, a second etching process, and a third etching process on the unprotected portions of the hard mask layer, wherein the first etching process partially removes the unprotected portions of the hard mask layer, the second etching process treats the unprotected portions of the hard mask layer, and the third etching process removes the remaining unprotected portions of the hard mask layer; and performing a fourth etching process to remove the protected portions of the hard mask layer.
摘要翻译：公开了一种制造具有改进性能的集成电路的方法。该方法包括提供基底; 在衬底上形成硬掩模层; 形成硬掩模层的受保护部分和未保护部分; 对硬掩模层的未保护部分进行第一蚀刻工艺，第二蚀刻工艺和第三蚀刻工艺，其中第一蚀刻工艺部分地去除硬掩模层的未保护部分，第二蚀刻工艺处理未保护部分的硬掩模层，并且第三蚀刻工艺除去硬掩模层的剩余的未保护部分; 以及执行第四蚀刻工艺以去除所述硬掩模层的被保护部分。

5. 发明授权

US08404572B2 Multi-zone temperature control for semiconductor wafer 有权
标题翻译：半导体晶圆的多区域温度控制
公开(公告)号：US08404572B2
公开(公告)日：2013-03-26
申请号：US12370746
申请日：2009-02-13
申请人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
发明人： Chun-Lin Chang , Hsin-Hsien Wu , Zin-Chang Wei , Chi-Ming Yang , Chyi-Shyuan Chern , Jun-Lin Yeh , Jih-Jse Lin , Jo-Fei Wang , Ming-Yu Fan , Jong-I Mou
IPC分类号： H01L21/425
CPC分类号： H01L22/20 , H01L21/67248 , H01L21/67253 , H01L22/12
摘要： An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.
摘要翻译：一种装置包括被配置为执行离子注入工艺的处理室。在处理室内设有冷却台板或静电吸盘。冷却台板或静电卡盘构造成支撑半导体晶片。冷却台板或静电卡盘具有多个温度区域。每个温度区域包括在冷却压板或静电卡盘内或附近的至少一个流体导管。提供至少两个冷却剂源，每个冷却剂源流体耦合到相应的一个流体导管，并且构造成在离子注入过程期间将分别不同的冷却剂供应到多个温度区中的相应的一个温度区。冷却剂源分别包括不同的冷却或制冷装置。

6. 发明申请

US20080047589A1 APPARATUS AND METHODS OF CLEANING SUBSTRATES 审中-公开
标题翻译：装置和清洁基板的方法
公开(公告)号：US20080047589A1
公开(公告)日：2008-02-28
申请号：US11467448
申请日：2006-08-25
申请人： Tsung-Min Huang , Zin-Chang Wei , Ming-Tsao Chiang
发明人： Tsung-Min Huang , Zin-Chang Wei , Ming-Tsao Chiang
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： B08B3/02 , B08B2203/0229 , H01L21/67051
摘要： An apparatus for wafer cleaning includes an enclosure. A stage is within the enclosure. At least one first wall is within the enclosure, around the stage. A plate is within the enclosure and above the stage, operable to enclose a first region between the stage and the first wall. The apparatus further includes an exhauster fluidly coupled to the first region between the stage and the first wall.
摘要翻译：用于晶片清洁的装置包括外壳。一个舞台在封面内。至少有一个第一个墙壁在围墙的周围。板在壳体内并且在平台上方，可操作以包围台阶和第一壁之间的第一区域。所述设备还包括流体耦合到所述台和所述第一壁之间的所述第一区域的排气器。

7. 发明授权

US08536491B2 Rotatable and tunable heaters for semiconductor furnace 有权
标题翻译：适用于半导体炉的可旋转和可调加热器
公开(公告)号：US08536491B2
公开(公告)日：2013-09-17
申请号：US12409880
申请日：2009-03-24
申请人： Zin-Chang Wei , Hsin-Hsien Wu , Chun-Lin Chang
发明人： Zin-Chang Wei , Hsin-Hsien Wu , Chun-Lin Chang
IPC分类号： F27D11/00 , H01L21/31 , H01L21/44
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67109
摘要： A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers.
摘要翻译：适用于晶圆化学气相沉积处理的半导体炉。该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。提供了一种加热系统，其包括多个可旋转的加热器，其布置并可操作以加热该腔室。在一个实施例中，侧壁加热器之间的间隔是可调节的。加热系统控制室内的温度变化并且促进在晶片上均匀的膜沉积物厚度。

8. 发明申请

US20100181500A1 METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：用于低温离子植入的方法和系统
公开(公告)号：US20100181500A1
公开(公告)日：2010-07-22
申请号：US12355443
申请日：2009-01-16
申请人： Chun-Lin Chang , Zin-Chang Wei , Hsin-Hsien Wu
发明人： Chun-Lin Chang , Zin-Chang Wei , Hsin-Hsien Wu
IPC分类号： H01J37/08
CPC分类号： C30B31/22
摘要： A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer.
摘要翻译：一种方法包括将处理室外的第一半导体晶片从等于或高于15℃的温度预先冷却至低于5℃的温度。预冷却的第一晶片在执行预处理之后放置在处理室内部冷却步骤在放置第一晶片之后，在第一晶片上进行低温离子注入。

9. 发明授权

US08409997B2 Apparatus and method for controlling silicon nitride etching tank 有权
标题翻译：用于控制氮化硅蚀刻槽的设备和方法
公开(公告)号：US08409997B2
公开(公告)日：2013-04-02
申请号：US11627030
申请日：2007-01-25
申请人： Zin-Chang Wei , Tsung-Min Huang , Ming-Tsao Chiang Chiang , Cheng-Chen Calvin Hsueh
发明人： Zin-Chang Wei , Tsung-Min Huang , Ming-Tsao Chiang Chiang , Cheng-Chen Calvin Hsueh
IPC分类号： H01L21/302
CPC分类号： H01L21/30604 , H01L21/31111 , H01L22/20
摘要： A method and system for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.
摘要翻译：用于控制氮化硅蚀刻槽的方法和系统提供了包括加热到高温的磷酸的蚀刻浴。控制磷酸中硅的浓度以保持与期望的氮化硅/氧化硅蚀刻选择性相关联的期望水平。测量硅浓度，同时硅保持可溶形式，并在二氧化硅沉淀之前。响应于测量，当必要时将新鲜加热的磷酸添加到蚀刻浴中以保持所需的浓度和氮化硅：氧化硅蚀刻选择性并防止二氧化硅沉淀。添加新鲜加热的磷酸使蚀刻液保持在稳态。可以使用原子吸收光谱来监测通过用冷去离子水稀释磷酸样品并在二氧化硅沉淀发生之前测量可以获得的硅浓度。

10. 发明申请

US20080179293A1 APPARATUS AND METHOD FOR CONTROLLING SILICON NITRIDE ETCHING TANK 有权
标题翻译：用于控制氮化硅蚀刻罐的装置和方法
公开(公告)号：US20080179293A1
公开(公告)日：2008-07-31
申请号：US11627030
申请日：2007-01-25
申请人： Zin-Chang Wei , Tsung-Min Huang , Ming-Tsao Chiang , Cheng-Chen Calvin Hsueh
发明人： Zin-Chang Wei , Tsung-Min Huang , Ming-Tsao Chiang , Cheng-Chen Calvin Hsueh
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01L21/30604 , H01L21/31111 , H01L22/20
摘要： A method and system for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.
摘要翻译：用于控制氮化硅蚀刻槽的方法和系统提供了包括加热到高温的磷酸的蚀刻浴。控制磷酸中硅的浓度以保持与期望的氮化硅/氧化硅蚀刻选择性相关联的期望水平。测量硅浓度，同时硅保持可溶形式，并在二氧化硅沉淀之前。响应于测量，当必要时将新鲜加热的磷酸添加到蚀刻浴中以保持所需的浓度和氮化硅：氧化硅蚀刻选择性并防止二氧化硅沉淀。添加新鲜加热的磷酸使蚀刻液保持在稳态。可以使用原子吸收光谱来监测通过用冷去离子水稀释磷酸样品并在二氧化硅沉淀发生之前测量可以获得的硅浓度。

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