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1. 发明申请

US20080179293A1 APPARATUS AND METHOD FOR CONTROLLING SILICON NITRIDE ETCHING TANK 有权
标题翻译：用于控制氮化硅蚀刻罐的装置和方法
公开(公告)号：US20080179293A1
公开(公告)日：2008-07-31
申请号：US11627030
申请日：2007-01-25
申请人： Zin-Chang Wei , Tsung-Min Huang , Ming-Tsao Chiang , Cheng-Chen Calvin Hsueh
发明人： Zin-Chang Wei , Tsung-Min Huang , Ming-Tsao Chiang , Cheng-Chen Calvin Hsueh
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01L21/30604 , H01L21/31111 , H01L22/20
摘要： A method and system for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.
摘要翻译：用于控制氮化硅蚀刻槽的方法和系统提供了包括加热到高温的磷酸的蚀刻浴。控制磷酸中硅的浓度以保持与期望的氮化硅/氧化硅蚀刻选择性相关联的期望水平。测量硅浓度，同时硅保持可溶形式，并在二氧化硅沉淀之前。响应于测量，当必要时将新鲜加热的磷酸添加到蚀刻浴中以保持所需的浓度和氮化硅：氧化硅蚀刻选择性并防止二氧化硅沉淀。添加新鲜加热的磷酸使蚀刻液保持在稳态。可以使用原子吸收光谱来监测通过用冷去离子水稀释磷酸样品并在二氧化硅沉淀发生之前测量可以获得的硅浓度。

2. 发明申请

US20080047589A1 APPARATUS AND METHODS OF CLEANING SUBSTRATES 审中-公开
标题翻译：装置和清洁基板的方法
公开(公告)号：US20080047589A1
公开(公告)日：2008-02-28
申请号：US11467448
申请日：2006-08-25
申请人： Tsung-Min Huang , Zin-Chang Wei , Ming-Tsao Chiang
发明人： Tsung-Min Huang , Zin-Chang Wei , Ming-Tsao Chiang
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： B08B3/02 , B08B2203/0229 , H01L21/67051
摘要： An apparatus for wafer cleaning includes an enclosure. A stage is within the enclosure. At least one first wall is within the enclosure, around the stage. A plate is within the enclosure and above the stage, operable to enclose a first region between the stage and the first wall. The apparatus further includes an exhauster fluidly coupled to the first region between the stage and the first wall.
摘要翻译：用于晶片清洁的装置包括外壳。一个舞台在封面内。至少有一个第一个墙壁在围墙的周围。板在壳体内并且在平台上方，可操作以包围台阶和第一壁之间的第一区域。所述设备还包括流体耦合到所述台和所述第一壁之间的所述第一区域的排气器。

3. 发明申请

US20080295874A1 WET PROCESSING APPARATUSES 有权
标题翻译：湿处理设备
公开(公告)号：US20080295874A1
公开(公告)日：2008-12-04
申请号：US11754843
申请日：2007-05-29
申请人： Kuang-Nian Tang , Yang-Kai Fan , Yu-Sheng Su , Ming-Tsao Chiang , Yu-Cheng Shih
发明人： Kuang-Nian Tang , Yang-Kai Fan , Yu-Sheng Su , Ming-Tsao Chiang , Yu-Cheng Shih
IPC分类号： B08B3/10
CPC分类号： H01L21/67023 , H01L21/67057
摘要： A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.
摘要翻译：半导体装置包括配置成容纳第一流体的第一罐。第二罐被配置为接收第一流体溢流到第二罐的上部并容纳第二流体。包括第一管道的循环系统配置在第一罐和第二罐之间。第一导管具有基本上低于第二流体表面的端部。包括第二导管的流体提供系统流体地联接到第二罐并且被配置为将第二流体提供到第二罐中。第二导管具有基本上低于第二流体表面的端部。溢流系统联接到第二罐，并且构造成当第二流体的表面基本上等于或高于预定水平时，去除第二流体的上部。

4. 发明授权

US08616821B2 Integrated apparatus to assure wafer quality and manufacturability 有权
标题翻译：集成设备，确保晶圆质量和可制造性
公开(公告)号：US08616821B2
公开(公告)日：2013-12-31
申请号：US12869171
申请日：2010-08-26
申请人： Shao-Yen Ku , Chi-Ming Yang , Ming-Tsao Chiang , Yu-Fen Tzeng , Chin-Hsiang Lin
发明人： Shao-Yen Ku , Chi-Ming Yang , Ming-Tsao Chiang , Yu-Fen Tzeng , Chin-Hsiang Lin
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67011 , H01L21/67155 , H01L21/67201 , H01L21/677 , H01L21/67703 , H01L21/67745 , H01L21/67772 , H01L21/67778 , Y10S414/135 , Y10S414/139
摘要： The present disclosure provides a system and method for processing a semiconductor substrate wherein a substrate is received at a load lock interface. The substrate is transferred from the load lock interface to a process module using a first module configured for unprocessed substrates. A manufacturing process is performed on the substrate within the process module. Thereafter, the substrate is transferred from the process module to the load lock interface using a second module configured for processed substrates.
摘要翻译：本公开提供了一种用于处理半导体衬底的系统和方法，其中在负载锁定接口处接收衬底。使用配置为未处理基板的第一模块将基板从加载锁定接口传送到处理模块。在处理模块内的基板上进行制造工艺。此后，使用配置成处理的基板的第二模块将基板从处理模块传送到加载锁定接口。

5. 发明授权

US08460478B2 Wet processing apparatuses 有权
标题翻译：湿处理设备
公开(公告)号：US08460478B2
公开(公告)日：2013-06-11
申请号：US11754843
申请日：2007-05-29
申请人： Kuang-Nian Tang , Yang-Kai Fan , Yu-Sheng Su , Ming-Tsao Chiang , Yu-Cheng Shih
发明人： Kuang-Nian Tang , Yang-Kai Fan , Yu-Sheng Su , Ming-Tsao Chiang , Yu-Cheng Shih
IPC分类号： B08B3/00
CPC分类号： H01L21/67023 , H01L21/67057
摘要： A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.
摘要翻译：半导体装置包括配置成容纳第一流体的第一罐。第二罐被配置为接收第一流体溢流到第二罐的上部并容纳第二流体。包括第一管道的循环系统配置在第一罐和第二罐之间。第一导管具有基本上低于第二流体表面的端部。包括第二导管的流体提供系统流体地联接到第二罐并且被配置为将第二流体提供到第二罐中。第二导管具有基本上低于第二流体表面的端部。溢流系统联接到第二罐，并且构造成当第二流体的表面基本上等于或高于预定水平时，去除第二流体的上部。

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