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1. 发明授权

US06745214B2 Calorie control apparatus with voice recognition 失效
标题翻译：带语音识别的热量控制装置
公开(公告)号：US06745214B2
公开(公告)日：2004-06-01
申请号：US09770297
申请日：2001-01-29
申请人： Koki Inoue , Junko Sekiguchi
发明人： Koki Inoue , Junko Sekiguchi
IPC分类号： G06F300
CPC分类号： G01G19/4146
摘要： Disclosed is a calorie control apparatus for calculating and controlling calorie intake by entering names of food ingested. The apparatus includes a voice input unit, a memory unit, a voice recognition unit, and a control unit. The voice input unit enters a voice signal, and the memory unit stores the calorie value per a unit amount of each of a plurality of foods. The voice recognition unit identifies a food name on the basis of the voice signal entered, and the control unit calculates the calorie intake on the basis of the calorie value per a unit amount of the food stored in the memory unit corresponding to the identified food name.
摘要翻译：公开了一种卡路里控制装置，用于通过输入食物的名称来计算和控制卡路里摄入量。该装置包括语音输入单元，存储单元，语音识别单元和控制单元。语音输入单元输入语音信号，并且存储单元存储多个食物中每个单位量的卡路里值。语音识别单元基于输入的语音信号识别食物名称，并且控制单元基于存储在与所识别的食物名称对应的存储单元中的单位量的食物的卡路里值来计算卡路里摄入量。

2. 发明申请

US20110315979A1 TRANSISTOR AND SEMICONDUCTOR DEVICE 有权
标题翻译：晶体管和半导体器件
公开(公告)号：US20110315979A1
公开(公告)日：2011-12-29
申请号：US13164296
申请日：2011-06-20
申请人： Masashi Tsubuku , Takayuki Inoue , Suzunosuke Hiraishi , Erumu Kikuchi , Hiromichi Godo , Shuhei Yoshitomi , Koki Inoue , Akiharu Miyanaga , Shunpei Yamazaki
发明人： Masashi Tsubuku , Takayuki Inoue , Suzunosuke Hiraishi , Erumu Kikuchi , Hiromichi Godo , Shuhei Yoshitomi , Koki Inoue , Akiharu Miyanaga , Shunpei Yamazaki
IPC分类号： H01L29/78
CPC分类号： H01L29/7869 , H01L29/408
摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1
摘要翻译：制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管，以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。此外，制造包括晶体管的半导体器件。

3. 发明申请

US20100004096A1 STATE-OF-EXERCISE MEASURING APPARATUS AND BIOMETRIC APPARATUS 有权
标题翻译：运动状态测量装置和生物测定装置
公开(公告)号：US20100004096A1
公开(公告)日：2010-01-07
申请号：US12494863
申请日：2009-06-30
申请人： Koki Inoue
发明人： Koki Inoue
IPC分类号： A63B71/00
CPC分类号： A61B5/053 , A61B5/1116 , A61B5/4872 , A61B2560/0412 , A61B2560/0468 , A61B2562/043 , A63B2220/51 , A63B2220/52 , A63B2220/58 , A63B2230/01 , A63B2230/30 , A63B2230/70 , A63B2230/75 , G01G19/4146 , Y10S482/901
摘要： The invention provides a state-of-exercise measuring apparatus and a biometric apparatus configured to measure a state of exercise of a user accurately and easily in real time by calculating biometric impedances of the user doing an exercise and utilizing a change of the biometric impedances. A state-of-exercise measuring apparatus according to an aspect of the invention includes: a conducting electrode configured to come into contact with the user to supply an electric current; a measuring electrode configured to acquire a voltage of the electric current being supplied from the conducting electrode and flowing in the user's body; a biometric impedance calculating unit configured to calculate a biometric impedance of the user from a current value supplied from the conducting electrode and a voltage value measured by the measuring electrode; and a state determining unit configured to determine a state of exercise on the basis of a first biometric impedance value of the user in a predetermined state and a second biometric impedance value of the user in a state of exercise different from the predetermined state.
摘要翻译：本发明提供了一种运动状态测量装置和生物测定装置，其被配置为通过计算用户进行锻炼并利用生物测定阻抗的变化的生物体阻抗来实时地测量用户的运动状态。根据本发明的一个方面的运动状态测量装置包括：导电电极，被配置为与用户接触以提供电流; 测量电极，被配置为获取从所述导电电极提供并在所述使用者身体中流动的电流的电压; 生物体阻抗计算单元，被配置为从由所述导电电极提供的电流值和由所述测量电极测量的电压值计算所述用户的生物测定阻抗; 以及状态确定单元，被配置为基于在预定状态下的用户的第一生物体阻抗值和与所述预定状态不同的运动状态下的所述用户的第二生物测定阻抗值来确定运动状态。

4. 发明申请

US20070105288A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070105288A1
公开(公告)日：2007-05-10
申请号：US11588331
申请日：2006-10-27
申请人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
发明人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , H01L21/02675 , H01L21/2022 , H01L21/2026 , H01L27/1277
摘要： A manufacturing method of a semiconductor device with improved operating characteristics and reliability is provided. An amorphous semiconductor film is formed over a substrate, doped with a metal element promoting crystallization, and crystallized by first heat treatment to form a crystalline semiconductor film; a first oxide film formed over the crystalline semiconductor film is removed and a second oxide film is formed; the crystalline semiconductor film having the second oxide film formed thereover is irradiated with first laser light; a semiconductor film containing a rare gas element is formed over the second oxide film; the metal element contained in the crystalline semiconductor film is gettered to the semiconductor film containing a rare gas element by second heat treatment; the semiconductor film containing a rare gas element and the second oxide film are removed; and the crystalline semiconductor film is irradiated with second laser light in an atmosphere containing oxygen.
摘要翻译：提供了具有改进的操作特性和可靠性的半导体器件的制造方法。在衬底上形成非晶半导体膜，掺杂有促进结晶的金属元素，并通过第一热处理结晶以形成晶体半导体膜; 去除在结晶半导体膜上形成的第一氧化膜，形成第二氧化膜; 用第一激光照射其上形成有第二氧化膜的结晶半导体膜; 在第二氧化物膜上形成含有稀有气体元素的半导体膜; 包含在结晶半导体膜中的金属元素通过第二热处理被吸收到含有稀有气体元素的半导体膜上; 去除含有稀有气体元素和第二氧化物膜的半导体膜; 在含氧气氛中用第二激光照射结晶半导体膜。

5. 发明授权

US08016727B2 State-of-exercise measuring apparatus and biometric apparatus 有权
标题翻译：运动状态测量装置和生物测定装置
公开(公告)号：US08016727B2
公开(公告)日：2011-09-13
申请号：US12494863
申请日：2009-06-30
申请人： Koki Inoue
发明人： Koki Inoue
IPC分类号： A63B71/00
CPC分类号： A61B5/053 , A61B5/1116 , A61B5/4872 , A61B2560/0412 , A61B2560/0468 , A61B2562/043 , A63B2220/51 , A63B2220/52 , A63B2220/58 , A63B2230/01 , A63B2230/30 , A63B2230/70 , A63B2230/75 , G01G19/4146 , Y10S482/901
摘要： The invention provides a state-of-exercise measuring apparatus and a biometric apparatus configured to measure a state of exercise of a user accurately and easily in real time by calculating biometric impedances of the user doing an exercise and utilizing a change of the biometric impedances. A state-of-exercise measuring apparatus according to an aspect of the invention includes: a conducting electrode configured to come into contact with the user to supply an electric current; a measuring electrode configured to acquire a voltage of the electric current being supplied from the conducting electrode and flowing in the user's body; a biometric impedance calculating unit configured to calculate a biometric impedance of the user from a current value supplied from the conducting electrode and a voltage value measured by the measuring electrode; and a state determining unit configured to determine a state of exercise on the basis of a first biometric impedance value of the user in a predetermined state and a second biometric impedance value of the user in a state of exercise different from the predetermined state.
摘要翻译：本发明提供了一种运动状态测量装置和生物测定装置，其被配置为通过计算用户进行锻炼并利用生物测定阻抗的变化的生物体阻抗来实时地测量用户的运动状态。根据本发明的一个方面的运动状态测量装置包括：导电电极，被配置为与用户接触以提供电流; 测量电极，被配置为获取从所述导电电极提供并在所述使用者身体中流动的电流的电压; 生物体阻抗计算单元，被配置为从由所述导电电极提供的电流值和由所述测量电极测量的电压值计算所述用户的生物测定阻抗; 以及状态确定单元，被配置为基于在预定状态下的用户的第一生物体阻抗值和与所述预定状态不同的运动状态下的所述用户的第二生物测定阻抗值来确定运动状态。

6. 发明申请

US20090076756A1 WEIGHT MEASURING APPARATUS 审中-公开
标题翻译：重量测量装置
公开(公告)号：US20090076756A1
公开(公告)日：2009-03-19
申请号：US12205159
申请日：2008-09-05
申请人： Koki Inoue
发明人： Koki Inoue
IPC分类号： G01G23/01
CPC分类号： G01G23/16 , A61B5/0537 , G01G19/4146
摘要： The invention provides a weight measuring apparatus which carries out zero-point reset as an output value of a load signal in an unloaded state when the weight measuring apparatus is not in use, including a weight measuring unit that measures a load applied to a machine body and outputs the load signals; and a control device that receives the load signals from the weight measuring unit at reset time intervals for carrying out the zero-point reset of the weight measuring unit in the unloaded state, in which the control device changes the reset time interval to next zero-point reset according to the difference between the output value of the load signal at the time of previous zero-point reset and the output value of the load signal at zero-point reset of this time.
摘要翻译：本发明提供了一种重量测量装置，其在不使用重量测量装置的情况下，将零点复位作为负载信号的输出值，在重量测量装置中使用，该重量测量装置包括测量施加到机体的负载的重量测量单元并输出负载信号; 以及控制装置，其以复位时间间隔从重量测量单元接收负载信号，以在卸载状态下进行重量测量单元的零点复位，其中控制装置将复位时间间隔改变为下一个零点，根据上次零点复位时的负载信号的输出值与此时零点复位时的负载信号的输出值之间的差值进行点复位。

7. 发明授权

US06473642B1 Dividable type apparatus for measuring living body impedance 失效
标题翻译：用于测量生物体阻抗的分体式装置
公开(公告)号：US06473642B1
公开(公告)日：2002-10-29
申请号：US09697720
申请日：2000-10-27
申请人： Koki Inoue , Yoshinori Fukuda
发明人： Koki Inoue , Yoshinori Fukuda
IPC分类号： A61B505
CPC分类号： A61B5/0537 , A61B5/4872 , A61B2560/0468
摘要： Disclosed is a dividable apparatus for measuring living body impedance in which a first housing section 22 having a first current feeding electrode 4 and a first measurement electrode 5 mounted thereon can be physically separated from a second housing section 3 having a second current feeding electrode 6 and a second measurement electrode 7 mounted thereon, but said first and second housing sections 22, 3 are kept electrically connected to each other via an electric cable 11, whereby said first and second housing sections 22, 3 can freely be positioned on any parts of the body for impedance measurement.
摘要翻译：公开了一种用于测量生物体阻抗的可分割装置，其中具有安装在其上的第一电流馈送电极4和第一测量电极5的第一容纳部分22可以与具有第二电流馈送电极6的第二容纳部分3物理分离，安装在其上的第二测量电极7，但是所述第一和第二壳体部分22,3通过电缆11保持彼此电连接，由此所述第一和第二壳体部分22,3可以自由地定位在体阻抗测量。

8. 发明授权

US08895976B2 Transistor and semiconductor device 有权
标题翻译：晶体管和半导体器件
公开(公告)号：US08895976B2
公开(公告)日：2014-11-25
申请号：US13164296
申请日：2011-06-20
申请人： Masashi Tsubuku , Takayuki Inoue , Suzunosuke Hiraishi , Erumu Kikuchi , Hiromichi Godo , Shuhei Yoshitomi , Koki Inoue , Akiharu Miyanaga , Shunpei Yamazaki
发明人： Masashi Tsubuku , Takayuki Inoue , Suzunosuke Hiraishi , Erumu Kikuchi , Hiromichi Godo , Shuhei Yoshitomi , Koki Inoue , Akiharu Miyanaga , Shunpei Yamazaki
IPC分类号： H01L29/78 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/408
摘要： Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: τ1 and τ2, τ1
摘要翻译：制造的是包括与氧化物半导体层的一部分重叠的氧化物半导体层，源极电极层和漏极电极层，与氧化物半导体层重叠的栅极绝缘层，源极电极层和漏极电极层的晶体管，以及与所述氧化物半导体层的与氧化物半导体层的一部分重叠的栅电极，其间设置有栅极绝缘层，其中，在作为沟道形成区域的氧化物半导体层被照射光并停止光照射之后，弛豫时间氧化物半导体层的光响应特性中的载流子具有至少两种模式：τ1和τ2，τ1<τ2，τ2为300秒以下。此外，制造包括晶体管的半导体器件。

9. 发明申请

US20110013979A1 LOCK MECHANISM AND COMBINATION CASE 审中-公开
标题翻译：锁定机构和组合案例
公开(公告)号：US20110013979A1
公开(公告)日：2011-01-20
申请号：US12846529
申请日：2010-07-29
申请人： Takashi Sasaki , Koki Inoue
发明人： Takashi Sasaki , Koki Inoue
IPC分类号： F16B1/00
CPC分类号： B65D43/22 , B65D45/20 , Y10T403/58 , Y10T403/589
摘要： A locking technique that can lock and unlock a case by one action and in addition can hang the case at the time of, for example, display.A lock mechanism 40 for locking an upper case 20 and a lower case 30 together is mounted pivotally on the lower case 30. The lock mechanism 40 comprises: a lock portion 70 that is engaged with a lock engaging portion 24 provided in the upper case 20; and a hook portion 50 that is operated to engage and disengage the lock portion 70. The hook portion 50 is provided with lock pieces that act on lock-in pressing portions of the lock portion 70 at the time of engaging the lock portion 70. In addition, the hook portion 50 is provided with lock releasing pieces 53 for releasing engagement.
摘要翻译：可以通过一个动作来锁定和解锁壳体的锁定技术，并且可以在例如显示时挂起壳体。用于将上壳体20和下壳体30锁定在一起的锁定机构40可枢转地安装在下壳体30上。锁定机构40包括：锁定部分70，其与设置在上壳体20中的锁定接合部分24接合 ; 以及钩部50，其被操作以接合和解除锁定部70.钩部50设置有锁定片，其在与锁定部70接合时作用于锁定部70的锁定按压部。此外，钩部50设置有用于释放接合的锁定释放片53。

10. 发明授权

US07524713B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07524713B2
公开(公告)日：2009-04-28
申请号：US11588331
申请日：2006-10-27
申请人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
发明人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , H01L21/02675 , H01L21/2022 , H01L21/2026 , H01L27/1277
摘要： A manufacturing method of a semiconductor device with improved operating characteristics and reliability is provided. An amorphous semiconductor film is formed over a substrate, doped with a metal element promoting crystallization, and crystallized by first heat treatment to form a crystalline semiconductor film; a first oxide film formed over the crystalline semiconductor film is removed and a second oxide film is formed; the crystalline semiconductor film having the second oxide film formed thereover is irradiated with first laser light; a semiconductor film containing a rare gas element is formed over the second oxide film; the metal element contained in the crystalline semiconductor film is gettered to the semiconductor film containing a rare gas element by second heat treatment; the semiconductor film containing a rare gas element and the second oxide film are removed; and the crystalline semiconductor film is irradiated with second laser light in an atmosphere containing oxygen.
摘要翻译：提供了具有改进的操作特性和可靠性的半导体器件的制造方法。在衬底上形成非晶半导体膜，掺杂有促进结晶的金属元素，并通过第一热处理结晶以形成晶体半导体膜; 去除在结晶半导体膜上形成的第一氧化膜，形成第二氧化膜; 用第一激光照射其上形成有第二氧化膜的结晶半导体膜; 在第二氧化物膜上形成含有稀有气体元素的半导体膜; 包含在结晶半导体膜中的金属元素通过第二热处理被吸收到含有稀有气体元素的半导体膜上; 去除含有稀有气体元素和第二氧化物膜的半导体膜; 在含氧气氛中用第二激光照射结晶半导体膜。

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