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1. 发明申请

US20070105288A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070105288A1
公开(公告)日：2007-05-10
申请号：US11588331
申请日：2006-10-27
申请人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
发明人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
IPC分类号： H01L21/84
CPC分类号： H01L21/02672 , H01L21/02675 , H01L21/2022 , H01L21/2026 , H01L27/1277
摘要： A manufacturing method of a semiconductor device with improved operating characteristics and reliability is provided. An amorphous semiconductor film is formed over a substrate, doped with a metal element promoting crystallization, and crystallized by first heat treatment to form a crystalline semiconductor film; a first oxide film formed over the crystalline semiconductor film is removed and a second oxide film is formed; the crystalline semiconductor film having the second oxide film formed thereover is irradiated with first laser light; a semiconductor film containing a rare gas element is formed over the second oxide film; the metal element contained in the crystalline semiconductor film is gettered to the semiconductor film containing a rare gas element by second heat treatment; the semiconductor film containing a rare gas element and the second oxide film are removed; and the crystalline semiconductor film is irradiated with second laser light in an atmosphere containing oxygen.
摘要翻译：提供了具有改进的操作特性和可靠性的半导体器件的制造方法。在衬底上形成非晶半导体膜，掺杂有促进结晶的金属元素，并通过第一热处理结晶以形成晶体半导体膜; 去除在结晶半导体膜上形成的第一氧化膜，形成第二氧化膜; 用第一激光照射其上形成有第二氧化膜的结晶半导体膜; 在第二氧化物膜上形成含有稀有气体元素的半导体膜; 包含在结晶半导体膜中的金属元素通过第二热处理被吸收到含有稀有气体元素的半导体膜上; 去除含有稀有气体元素和第二氧化物膜的半导体膜; 在含氧气氛中用第二激光照射结晶半导体膜。

2. 发明授权

US07524713B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07524713B2
公开(公告)日：2009-04-28
申请号：US11588331
申请日：2006-10-27
申请人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
发明人： Hidekazu Miyairi , Chiho Kokubo , Koki Inoue
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , H01L21/02675 , H01L21/2022 , H01L21/2026 , H01L27/1277
摘要： A manufacturing method of a semiconductor device with improved operating characteristics and reliability is provided. An amorphous semiconductor film is formed over a substrate, doped with a metal element promoting crystallization, and crystallized by first heat treatment to form a crystalline semiconductor film; a first oxide film formed over the crystalline semiconductor film is removed and a second oxide film is formed; the crystalline semiconductor film having the second oxide film formed thereover is irradiated with first laser light; a semiconductor film containing a rare gas element is formed over the second oxide film; the metal element contained in the crystalline semiconductor film is gettered to the semiconductor film containing a rare gas element by second heat treatment; the semiconductor film containing a rare gas element and the second oxide film are removed; and the crystalline semiconductor film is irradiated with second laser light in an atmosphere containing oxygen.
摘要翻译：提供了具有改进的操作特性和可靠性的半导体器件的制造方法。在衬底上形成非晶半导体膜，掺杂有促进结晶的金属元素，并通过第一热处理结晶以形成晶体半导体膜; 去除在结晶半导体膜上形成的第一氧化膜，形成第二氧化膜; 用第一激光照射其上形成有第二氧化膜的结晶半导体膜; 在第二氧化物膜上形成含有稀有气体元素的半导体膜; 包含在结晶半导体膜中的金属元素通过第二热处理被吸收到含有稀有气体元素的半导体膜上; 去除含有稀有气体元素和第二氧化物膜的半导体膜; 在含氧气氛中用第二激光照射结晶半导体膜。

3. 发明授权

US07582162B2 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07582162B2
公开(公告)日：2009-09-01
申请号：US11600833
申请日：2006-11-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： C30B11/00 , C30B15/26 , H01L21/335
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

4. 发明申请

US20070015323A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070015323A1
公开(公告)日：2007-01-18
申请号：US11513054
申请日：2006-08-31
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。形成具有条状或矩形形状的凹凸和凹凸。然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。

5. 发明授权

US07148507B2 Semiconductor device having thin film transistor with position controlled channel formation region 有权
标题翻译：具有具有位置控制沟道形成区域的薄膜晶体管的半导体器件
公开(公告)号：US07148507B2
公开(公告)日：2006-12-12
申请号：US11013539
申请日：2004-12-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/84 , H01L31/36
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

6. 发明授权

US07148092B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07148092B2
公开(公告)日：2006-12-12
申请号：US10352066
申请日：2003-01-28
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
IPC分类号： H01L21/84
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L27/3244 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

7. 发明授权

US08093593B2 Semiconductor device having multichannel transistor 有权
标题翻译：具有多通道晶体管的半导体器件
公开(公告)号：US08093593B2
公开(公告)日：2012-01-10
申请号：US11516616
申请日：2006-09-07
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/10
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。消除了与沟道形成区域相邻的半导体区域。

8. 发明授权

US07652286B2 Semiconductor device and semiconductor device producing system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07652286B2
公开(公告)日：2010-01-26
申请号：US11529392
申请日：2006-09-29
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/76
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/0608 , B23K26/067 , B23K26/0738 , B23K26/0853 , B23K26/10 , B23K26/702 , B23K2101/40 , H01L21/2026 , H01L27/1281 , H01L29/78603
摘要： An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
摘要翻译：在基板上形成具有凹凸的绝缘膜。在绝缘膜上形成半导体膜。因此，对于通过使用激光的结晶，在半导体膜中选择性地形成应力集中的部分。更具体地，在半导体膜中设置条纹或矩形的凹凸。然后，连续波激光沿着形成在半导体膜中的条形凹部和突起或矩形的长轴或短轴的方向照射。

9. 发明申请

US20070085080A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070085080A1
公开(公告)日：2007-04-19
申请号：US11636598
申请日：2006-12-11
申请人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
发明人： Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi
IPC分类号： H01L29/00
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L27/3244 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.
摘要翻译：为了提供一种由半导体元件或一组半导体元件组成的半导体器件，其中在绝缘表面上形成可在沟道形成区域中具有尽可能少的晶界的结晶半导体膜，其可以高速操作，其中具有高电流驱动性能，并且元件之间波动较小。本发明的方法包括：在具有绝缘表面的基板上形成具有开口的绝缘膜; 在绝缘膜上和开口上形成非晶半导体膜或随机形成晶界的多晶半导体膜; 通过熔化半导体膜形成晶体半导体膜，将熔融的半导体注入到绝缘膜的开口中，并使半导体膜结晶或再结晶; 以及去除除了开口中的结晶半导体膜的部分之外的晶体半导体膜以形成与晶体半导体膜的顶面接触的栅极绝缘膜和栅电极。

10. 发明授权

US07176490B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07176490B2
公开(公告)日：2007-02-13
申请号：US11087652
申请日：2005-03-24
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/104
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

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