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1. 发明申请

US20050051434A1 Method and apparatus for controlling electrolytic solution 审中-公开
标题翻译：电解液控制方法及装置
公开(公告)号：US20050051434A1
公开(公告)日：2005-03-10
申请号：US10933353
申请日：2004-09-03
申请人： Koji Mishima , Masao Hodai , Hiroyuki Kanda , Kunihito Ide , Satoru Yamamoto , Seiji Katsuoka , Masaaki Kinbara , Masaji Akahori , Sota Nakagawa
发明人： Koji Mishima , Masao Hodai , Hiroyuki Kanda , Kunihito Ide , Satoru Yamamoto , Seiji Katsuoka , Masaaki Kinbara , Masaji Akahori , Sota Nakagawa
IPC分类号： C25D21/16 , C25D21/12 , C25D21/18 , C25D21/22 , C25D21/06 , C25C7/00
CPC分类号： C25D21/12 , C25D21/22
摘要： An electrolytic solution control method can control the composition of an electrolytic solution efficiently with high precision, and can remove a partially decomposed product of an organic component from an electrolytic solution. The electrolytic solution control method includes storing an electrolytic solution containing an organic component and an inorganic component in an electrolytic solution storage tank while controlling and keeping the electrolytic solution at a predetermined composition, adjusting an inorganic component of the waste electrolytic solution after use in electrolytic processing in an electrolytic processing apparatus, and then returning the waste electrolytic solution to the electrolytic solution storage tank.
摘要翻译：电解液控制方法能够高精度地有效地控制电解液的组成，能够从电解液中除去有机成分的部分分解产物。电解液控制方法包括将电解液储存罐中含有有机成分和无机成分的电解液同时控制并保持电解液为规定的组成，在电解处理后调整废电解液的无机成分在电解处理装置中，然后将废电解液返回到电解液储罐。

2. 发明申请

US20050236268A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20050236268A1
公开(公告)日：2005-10-27
申请号：US11109720
申请日：2005-04-20
申请人： Koji Mishima , Hiroyuki Kanda , Seiji Katsuoka , Masao Hodai , Hidenao Suzuki , Kazufumi Nomura , Naoki Matsuda
发明人： Koji Mishima , Hiroyuki Kanda , Seiji Katsuoka , Masao Hodai , Hidenao Suzuki , Kazufumi Nomura , Naoki Matsuda
IPC分类号： C23C18/16 , C25D7/12 , C25D17/00 , C25D21/00 , H01L21/00 , H01L21/288 , H01L21/768
CPC分类号： H01L21/6723 , C23C18/1632 , C25D5/48 , C25D5/50 , C25D7/123 , C25D17/001 , C25D21/04 , H01L21/2885 , H01L21/67017 , H01L21/67161 , H01L21/67219 , H01L21/76877
摘要： A substrate processing apparatus has a plating apparatus configured to plate a substrate to deposit a metal on a surface of the substrate and an additional process apparatus configured to perform an additional process on the substrate. The plating apparatus has a substrate placement stage on which the substrate to be transferred to the additional process apparatus is placed. The additional process apparatus has an additional process unit configured to perform the additional process on the substrate and a substrate transfer device operable to transfer the substrate between the substrate placement stage of the plating apparatus and the additional process unit. The substrate processing apparatus can perform an additional process in addition to a plating process without lowering a throughput of the apparatus and can upgrade the additional process at a low cost.
摘要翻译：基板处理装置具有：电镀装置，其被配置为对基板进行平板化以在基板的表面上沉积金属;以及附加处理装置，被配置为在所述基板上执行附加处理。电镀装置具有基板放置台，放置要转移到附加处理装置的基板。所述附加处理装置具有被配置为在所述基板上执行附加处理的附加处理单元以及可操作以在所述电镀装置的所述基板放置阶段和所述附加处理单元之间转移所述基板的基板转移装置。基板处理装置除了电镀工艺之外还可以执行附加处理，而不降低装置的生产量，并且可以以低成本升级附加处理。

3. 发明授权

US07374646B2 Electrolytic processing apparatus and substrate processing method 失效
标题翻译：电解处理装置及基板处理方法
公开(公告)号：US07374646B2
公开(公告)日：2008-05-20
申请号：US10767253
申请日：2004-01-30
申请人： Hidenao Suzuki , Kazufumi Nomura , Kunihito Ide , Hiroyuki Kanda , Koji Mishima , Naoki Mihara , Natsuki Makino , Seiji Katsuoka
发明人： Hidenao Suzuki , Kazufumi Nomura , Kunihito Ide , Hiroyuki Kanda , Koji Mishima , Naoki Mihara , Natsuki Makino , Seiji Katsuoka
IPC分类号： C25D17/00 , C25D17/02 , C25D17/06 , C25D7/12
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , H01L21/76877
摘要： The present invention provides an electrolytic processing apparatus which is capable of increasing an in-plane uniformity of a film thickness of a plated film by making more uniform an electric field distribution over an entire surface to be processed of a substrate even if the substrate has a large area, and controlling more uniformly a speed, over the entire surface to be processed of the substrate. The electrolytic processing apparatus of this invention includes: a substrate holder for holding a substrate, a first electrode for being brought into contact with the substrate to supply current to a surface, to be processed, of the substrate; a second electrode disposed substantially parallel to the surface, to be processed, of the substrate in a position facing the surface, to be processed, of the substrate held by the substrate holder; a high resistance structure disposed between the substrate held by the substrate holder and the second electrode; an electrolytic solution introducing portion for introducing an electrolytic solution into a region across which the substrate held by the substrate holder and the high resistance structure face each other, from laterally of the high resistance structure; and a power source for applying a voltage between the first electrode and the second electrode.
摘要翻译：本发明提供一种电解处理装置，其能够通过使基板的整个表面上的电场分布更均匀，从而提高镀膜的膜厚的面内均匀性，大面积，并且在基板的整个待处理表面上更均匀地控制速度。本发明的电解处理装置包括：用于保持基板的基板保持器，用于与基板接触的第一电极，以将基板的待加工表面供给电流; 基板平行于被处理面的基板平面的第二电极，所述第一电极与所述基板保持器保持的所述基板面对所述要被处理的表面的位置; 设置在由衬底保持器保持的衬底和第二电极之间的高电阻结构; 电解液引入部分，用于将电解溶液引入到由所述衬底保持器保持的所述衬底和所述高电阻结构面对的区域中，从所述高电阻结构的侧面引出; 以及用于在第一电极和第二电极之间施加电压的电源。

4. 发明申请

US20060086616A1 Plating apparatus and plating method 失效
标题翻译：电镀装置及电镀方法
公开(公告)号：US20060086616A1
公开(公告)日：2006-04-27
申请号：US11245490
申请日：2005-10-07
申请人： Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O' Neal , Hariklia Deligianni
发明人： Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O' Neal , Hariklia Deligianni
IPC分类号： C25D21/12 , C25B15/00
CPC分类号： C25D5/22 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/005 , C25D17/12 , C25D21/12 , H01L21/2885 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： A plating apparatus can securely carry out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.
摘要翻译：电镀装置可以可靠地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构，并且不对基板施加额外的电镀。电镀装置包括：基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分，用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分，用于监视在阴极和阳极之间流动的电流，并将检测信号反馈到恒压控制部分。

5. 发明申请

US20100219078A1 PLATING APPARATUS AND PLATING METHOD 审中-公开
标题翻译：电镀设备和电镀方法
公开(公告)号：US20100219078A1
公开(公告)日：2010-09-02
申请号：US12771056
申请日：2010-04-30
申请人： Keiichi KURASHINA , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
发明人： Keiichi KURASHINA , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
IPC分类号： C25D21/12 , C25D5/00
CPC分类号： C25D5/22 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/005 , C25D17/12 , C25D21/12 , H01L21/2885 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.
摘要翻译：电镀装置可以牢固地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构，并且不对基板施加额外的电镀。电镀装置包括：基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分，用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分，用于监视在阴极和阳极之间流动的电流，并将检测信号反馈到恒压控制部分。

6. 发明授权

US07736474B2 Plating apparatus and plating method 失效
标题翻译：电镀装置及电镀方法
公开(公告)号：US07736474B2
公开(公告)日：2010-06-15
申请号：US11245490
申请日：2005-10-07
申请人： Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
发明人： Keiichi Kurashina , Mizuki Nagai , Satoru Yamamoto , Hiroyuki Kanda , Koji Mishima , Shinya Morisawa , Junji Kunisawa , Kunihito Ide , Hidenao Suzuki , Emanuel Cooper , Philippe Vereecken , Brett Baker-O'Neal , Hariklia Deligianni
IPC分类号： C25D17/00 , C25D7/12
CPC分类号： C25D5/22 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/004 , C25D17/005 , C25D17/12 , C25D21/12 , H01L21/2885 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.
摘要翻译：电镀装置可以牢固地进行基板的平坦化镀以形成具有平坦表面的镀膜而不使用昂贵的机构，并且不对基板施加额外的电镀。电镀装置包括：基板支架; 具有用于水密密封基板的周边部分的密封部件的阴极部分和用于向基板供给电流的阴极电极; 设置在面向所述基板的表面的位置的阳极; 设置在所述阳极和所述基板的表面之间的多孔构件; 恒定电压控制部分，用于以恒定值控制在所述阴极和所述阳极之间施加的电压; 以及电流监视部分，用于监视在阴极和阳极之间流动的电流，并将检测信号反馈到恒压控制部分。

7. 发明申请

US20050023149A1 Plating apparatus, plating method and substrate processing apparatus 审中-公开
标题翻译：电镀装置，电镀方法和基板处理装置
公开(公告)号：US20050023149A1
公开(公告)日：2005-02-03
申请号：US10860115
申请日：2004-06-04
申请人： Tsutomu Nakada , Junji Kunisawa , Hiroyuki Kanda , Mizuki Nagai , Satoru Yamamoto , Koji Mishima , Shinya Morisawa , Seiji Katsuoka , Natsuki Makino , Yukio Fukunaga
发明人： Tsutomu Nakada , Junji Kunisawa , Hiroyuki Kanda , Mizuki Nagai , Satoru Yamamoto , Koji Mishima , Shinya Morisawa , Seiji Katsuoka , Natsuki Makino , Yukio Fukunaga
IPC分类号： C25D5/00 , C25D7/12 , C25D17/06
CPC分类号： C25D17/001 , C25D7/123 , C25D17/06
摘要： The present invention provides a plating apparatus which uses an insoluble anode and which can perform plating of a substrate stably while preventing oxygen gas, generated due to the use of the insoluble anode, from causing defects in the substrate. The plating apparatus includes: a substrate holder for holding a substrate; a cathode section including a seal ring for contacting a peripheral portion of a surface, to be plated, of the substrate held by the substrate holder to seal the peripheral portion water-tightly, and a cathode for contacting the substrate to supply current to the substrate; a vertically-movable electrode head provided above the cathode section, including an anode chamber housing an anode made of an insoluble material and having a bottom opening closed with a water-permeable porous member; a plating solution injection section for injecting a plating solution between the anode and the surface, to be plated, of the substrate held by the substrate holder; a power source for applying a plating voltage between the cathode and the anode; and a gas discharge line for discharging a gas from the anode chamber.
摘要翻译：本发明提供一种电镀装置，其使用不溶性阳极，并且可以在防止由于使用不溶性阳极而产生的氧气导致基板中的缺陷的同时稳定地进行基板的电镀。电镀装置包括：用于保持基板的基板保持件; 阴极部分，包括用于接触被基板保持器保持的基板的周边部分的密封环，以密封周边部分，以及用于接触基板以向基板供应电流的阴极 ; 设置在所述阴极部分上方的可垂直移动的电极头，包括容纳由不溶性材料制成的阳极并且具有用透水性多孔构件封闭的底部开口的阳极室; 电镀溶液注入部，用于在被基板保持器保持的基板的阳极和要被电镀的表面之间注入电镀液; 用于在阴极和阳极之间施加电镀电压的电源; 以及用于从阳极室排出气体的气体排出管线。

8. 发明申请

US20050000820A1 Apparatus and method for processing a substrate 审中-公开
标题翻译：用于处理衬底的装置和方法
公开(公告)号：US20050000820A1
公开(公告)日：2005-01-06
申请号：US10854252
申请日：2004-05-27
申请人： Koji Mishima , Kunihito Ide , Hidenao Suzuki , Kazufumi Nomura , Hiroyuki Kanda
发明人： Koji Mishima , Kunihito Ide , Hidenao Suzuki , Kazufumi Nomura , Hiroyuki Kanda
IPC分类号： C25D7/12 , C25C7/00 , C25D5/00 , C25D17/00 , C25D21/04 , C25D21/12 , C25D21/14 , H01L21/288 , H01L21/445
CPC分类号： C25D17/002 , C25D17/001 , C25D21/04 , H01L21/2885
摘要： A method and apparatus are set forth capable of processing a substrate with a high uniformity within the surface area even for a thin feeding layer. The method comprises arranging a counter electrode and the substrate to confront each other; providing a membrane between the counter electrode and the substrate to define a substrate side region and a counter electrode side region. The substrate side region and the counter electrode side region are capable of accommodating respective electrolytes. The substrate side region and the counter electrode side region are supplied with respective electrolytes having different specific resistances. A processing current is also supplied between the substrate and the counter electrode.
摘要翻译：提出了一种方法和装置，即使对于薄的进料层，也能够在表面积内处理高均匀性的基板。该方法包括将对置电极和基板相互对置布置; 在对电极和基板之间提供膜以限定基板侧区域和对电极侧区域。基板侧区域和对置电极侧区域能够容纳各种电解质。向基板侧区域和对电极侧区域供给具有不同比电阻的各电解质。在基板和对置电极之间也提供处理电流。

9. 发明申请

US20050145482A1 Apparatus and method for processing substrate 审中-公开
标题翻译：基板处理装置及方法
公开(公告)号：US20050145482A1
公开(公告)日：2005-07-07
申请号：US10973350
申请日：2004-10-27
申请人： Hidenao Suzuki , Koji Mishima , Hiroyuki Kanda , Kazufumi Nomura , Kunihito Ide , Kazuyuki Yahiro , Hiroshi Toyoda , Tetsuo Matsuda
发明人： Hidenao Suzuki , Koji Mishima , Hiroyuki Kanda , Kazufumi Nomura , Kunihito Ide , Kazuyuki Yahiro , Hiroshi Toyoda , Tetsuo Matsuda
IPC分类号： C25D7/12 , C25D17/00 , C25D17/06 , C25D21/10 , H01L21/288 , H01L21/3205 , H01L21/68 , H01L21/683
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/06
摘要： An apparatus and a method for processing substrate are generally used for apparatuses for wet-type process of substrate, such as an electrolytic processing apparatus for use in forming interconnects by embedding a metal such as copper (Cu) or the like in fine interconnect patterns (recesses) that are formed in a substrate such as a semiconductor wafer and for use in forming bumps for electrical connections. The substrate processing apparatus includes: a substrate holder for holding a substrate; a first electrode for contacting the substrate to supply electricity to a processing surface of the substrate; a second electrode disposed so as to face the processing surface of the substrate held by the substrate holder; and a processing liquid supply section for supplying a processing liquid into the space between the processing surface of the substrate held by the substrate holder and the second electrode, wherein the substrate holder is designed to rotate the substrate during processing in such a manner that acceleration and slowdown and/or normal rotation and reverse rotation are repeated.
摘要翻译：用于处理衬底的装置和方法通常用于衬底的湿式处理装置，例如通过将金属（例如铜）（Cu）等嵌入到精细互连图案中而形成互连件的电解处理装置凹部），其形成在诸如半导体晶片的基板中，并且用于形成用于电连接的凸块。基板处理装置包括：用于保持基板的基板保持件; 第一电极，用于接触所述衬底以向所述衬底的处理表面供电; 第二电极，其设置成面对由所述基板保持器保持的所述基板的处理表面; 以及处理液体供应部分，用于将处理液体供应到由基板保持器保持的基板的处理表面与第二电极之间的空间中，其中基板保持器设计成在加工期间使基板旋转，重复减速和/或正常旋转和反向旋转。

10. 发明授权

US07169705B2 Plating method and plating apparatus 有权
标题翻译：电镀方法和电镀装置
公开(公告)号：US07169705B2
公开(公告)日：2007-01-30
申请号：US10989658
申请日：2004-11-17
申请人： Kunihito Ide , Koji Mishima , Hiroyuki Kanda , Hidenao Suzuki , Kazufumi Nomura
发明人： Kunihito Ide , Koji Mishima , Hiroyuki Kanda , Hidenao Suzuki , Kazufumi Nomura
IPC分类号： H01L21/44
CPC分类号： C25D17/001 , C25D3/38 , C25D7/123 , H01L21/2885
摘要： A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method includes: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of a substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on a conductive layer side, and an anode solution into a space between the conductive layer and the anode on an anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, with the plating solution containing 25 to 75 g/L of copper ions and at least 0.4 mole/L of an organic acid or an inorganic acid, and the anode solution being of the same composition as the plating solution, or containing 0 to 75 g/L of copper ions and at most 0.6 mole/L of an organic acid or an inorganic acid; and applying a voltage between the conductive layer and the anode to plate a surface of the conductive layer.
摘要翻译：电镀方法能够沉积相对于薄种子层具有优异的面内均匀性的电镀膜，并且相对于细的镶嵌结构具有优异的嵌入性。电镀方法包括：将电阻器定位在形成在基板表面的至少一部分上的导电层和阳极之间; 在导电层侧将导电层和阳极之间的电镀溶液分别引入到阳极侧的导电层和阳极之间的空间中，由此将电镀液填充到由电镀溶液和阳极溶液，电镀液含有25〜75g / L的铜离子和至少0.4mol / L的有机酸或无机酸，并且阳极溶液与镀层的组成相同溶液，或含有0至75g / L的铜离子和至多0.6mol / L的有机酸或无机酸; 以及在所述导电层和所述阳极之间施加电压以对所述导电层的表面进行平板化。

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