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1. 发明授权

US06212252B1 X-ray mask provided with an alignment mark and method of manufacturing the same 失效
标题翻译：具有对准标记的X射线掩模及其制造方法
公开(公告)号：US06212252B1
公开(公告)日：2001-04-03
申请号：US09177826
申请日：1998-10-23
申请人： Koji Kise , Hideki Yabe , Sunao Aya , Kaeko Kitamura , Kenji Marumoto , Shigeto Ami
发明人： Koji Kise , Hideki Yabe , Sunao Aya , Kaeko Kitamura , Kenji Marumoto , Shigeto Ami
IPC分类号： G21K500
CPC分类号： G03F1/22 , G03F1/42 , G03F9/7076
摘要： An X-ray mask which is provided with an alignment mark and a transfer circuit pattern having a high position accuracy can be manufactured through a simplified manufacturing process. A membrane allowing passage of X-rays is formed on a substrate. A X-ray absorber intercepting transmission of X-rays is formed on the membrane. The substrate includes a window exposing the membrane. The X-ray absorber includes a transfer circuit pattern and an alignment mark formed in a region not overlapping with the window in a plan view.
摘要翻译：可以通过简化的制造工艺制造具有对准标记的X射线掩模和具有高定位精度的传输电路图案。在基板上形成允许X射线通过的膜。在膜上形成截止X射线透射的X射线吸收器。衬底包括暴露膜的窗口。 X射线吸收体包括在平面图中形成在与窗不重叠的区域中的转印电路图案和对准标记。

2. 发明授权

US06265113B1 Stress adjustment method of X-ray mask 失效
标题翻译： X射线掩模的应力调整方法
公开(公告)号：US06265113B1
公开(公告)日：2001-07-24
申请号：US09116334
申请日：1998-07-16
申请人： Hideki Yabe , Kaeko Kitamura , Kenji Marumoto , Sunao Aya , Koji Kise
发明人： Hideki Yabe , Kaeko Kitamura , Kenji Marumoto , Sunao Aya , Koji Kise
IPC分类号： G03F900
CPC分类号： G03F1/22
摘要： An X-ray absorber is deposited on a membrane. A stress adjust step is applied so that the average film stress of the X-ray absorber is 0. After patterning the X-ray absorber, the position accuracy of the pattern is measured. Then, a stress adjust process is applied to the patterned X-ray mask. Accordingly, a stress adjustment method is used to acquire an X-ray mask that has no pattern position offset of the X-ray absorber.
摘要翻译：在膜上沉积X射线吸收剂。施加应力调整步骤，使得X射线吸收体的平均膜应力为0.在对X射线吸收体进行图案化之后，测量图案的位置精度。然后，对图案化的X射线掩模施加应力调整处理。因此，使用应力调整方法来获取没有X射线吸收体的图案位置偏移的X射线掩模。

3. 发明授权

US5834142A Method of manufacturing X-ray mask and heating apparatus 失效
公开(公告)号：US5834142A
公开(公告)日：1998-11-10
申请号：US738287
申请日：1996-10-25
申请人： Hideki Yabe , Kenji Marumoto , Sunao Aya , Koji Kise , Hiroaki Sumitani , Takashi Hifumi , Hiroshi Watanabe
发明人： Hideki Yabe , Kenji Marumoto , Sunao Aya , Koji Kise , Hiroaki Sumitani , Takashi Hifumi , Hiroshi Watanabe
IPC分类号： G03F1/22 , H01L21/027 , H01L21/324 , G03F9/00
CPC分类号： G03F1/22
摘要： The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.

4. 发明授权

US5677090A Method of making X-ray mask having reduced stress 失效
标题翻译：制造应力减小的X射线掩模的方法
公开(公告)号：US5677090A
公开(公告)日：1997-10-14
申请号：US604678
申请日：1996-02-21
申请人： Kenji Marumoto , Hideki Yabe , Sunao Aya , Koji Kise , Kei Sasaki
发明人： Kenji Marumoto , Hideki Yabe , Sunao Aya , Koji Kise , Kei Sasaki
IPC分类号： B81B3/00 , B81C1/00 , G03F1/22 , G03F9/00
CPC分类号： G03F1/22 , B81C1/00666 , B81C2201/0167 , B81C2201/0169
摘要： A method of making a X-ray mask including: a step of forming a X-ray absorber above a substrate; a step of controlling a stress of the X-ray absorber by a predetermined condition; and wherein the predetermined condition for controlling the stress of the X-ray absorber formed above the substrate is determined by a measured value of a stress of a X-ray absorber formed on a monitor substrate.
摘要翻译：一种制造X射线掩模的方法，包括：在衬底上形成X射线吸收体的步骤; 控制X射线吸收体的应力为预定条件的步骤; 并且其中用于控制形成在基板上方的X射线吸收体的应力的预定条件由形成在监视器基板上的X射线吸收体的应力的测量值确定。

5. 发明授权

US5953492A Method of manufacturing X-ray mask and heating apparatus 失效
标题翻译：制造X射线掩模和加热装置的方法
公开(公告)号：US5953492A
公开(公告)日：1999-09-14
申请号：US975112
申请日：1997-11-20
申请人： Hideki Yabe , Kenji Marumoto , Sunao Aya , Koji Kise , Hiroaki Sumitani , Takashi Hifumi , Hiroshi Watanabe
发明人： Hideki Yabe , Kenji Marumoto , Sunao Aya , Koji Kise , Hiroaki Sumitani , Takashi Hifumi , Hiroshi Watanabe
IPC分类号： G03F1/22 , H01L21/027 , H01L21/324 , G03F9/00 , H05B3/20
CPC分类号： G03F1/22
摘要： The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.
摘要翻译：根据本发明制造的X射线掩模可以解决尽管X射线吸收体中的平均薄膜应力可以为零，但X射线吸收体的薄膜应力不能为零的问题。测量在硅基板1上形成X射线吸收体4之后的X射线吸收体4上的薄膜应力分布，然后改变对热板8的加热器9a，9b，9c的电力输入以便将X射线吸收体4根据可以使整个X射线吸收体中的薄膜应力为零的规定的温度分布加热到温度。

6. 发明授权

US5879840A Film-forming method for X-ray mask 失效
标题翻译： X射线掩模成膜方法
公开(公告)号：US5879840A
公开(公告)日：1999-03-09
申请号：US904185
申请日：1997-08-01
申请人： Hideki Yabe , Kaeko Kitamura , Masao Kouhashi , Masamitsu Okamura , Kei Sasaki
发明人： Hideki Yabe , Kaeko Kitamura , Masao Kouhashi , Masamitsu Okamura , Kei Sasaki
IPC分类号： C23C14/50 , C23C14/54 , G03F1/22 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22 , C23C14/505 , C23C14/545
摘要： A film-forming method and an apparatus for a X-ray mask and a film-forming apparatus which are able to diminish stress unevenness in the X-ray mask to zero when a X-ray absorber is formed on a mask substrate by sputtering a target 3 during rotation of the mask substrate. Firstly, a dummy mask substrate is prepared instead of a mask substrate. A dummy X-ray absorber 6 is formed on this dummy X-ray substrate 5 within a sputtering range. Secondly, a stress distribution is measured at every position along a straight line passing through a center of the dummy X-ray absorber 6 and then a desirable stress distribution range X is selected at such a location so as to have a good linear characteristic in a portion of a compressive stress curve which decreases toward an outer periphery of the dummy X-ray absorber 6 in the stress distribution. A center of the desirable stress distribution range X is selected as a rotation center, the mask substrate is placed within the desirable stress distribution range X, and the X-ray absorber is formed by this film-forming technology.
摘要翻译：当通过溅射在掩模基板上形成X射线吸收体时，能够将X射线掩模中的应力不均匀性降低到零的X射线掩模和成膜装置的成膜方法和装置在掩模基板旋转期间的目标3。首先，准备虚设掩模基板来代替掩模基板。在该虚拟X射线基板5上，在溅射范围内形成虚拟X射线吸收体6。其次，在通过虚拟X射线吸收体6的中心的直线的每个位置处测量应力分布，然后在这样的位置选择期望的应力分布范围X，使得在在应力分布中朝向虚拟X射线吸收体6的外周减小的压缩应力曲线的一部分。选择期望的应力分布范围X的中心作为旋转中心，将掩模基板置于期望的应力分布范围X内，并且通过该成膜技术形成X射线吸收体。

7. 发明授权

US5905005A X-ray mask and method of fabricating the same 失效
标题翻译： X射线掩模及其制造方法
公开(公告)号：US5905005A
公开(公告)日：1999-05-18
申请号：US949339
申请日：1997-10-14
申请人： Hideki Yabe , Kaeko Kitamura , Kei Sasaki
发明人： Hideki Yabe , Kaeko Kitamura , Kei Sasaki
IPC分类号： G21K5/02 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22
摘要： An antireflection film formed on a membrane of an X-ray mask has an amorphous structure. A patterned X-ray absorber intercepting transmission of X-rays is formed to be in contact with the front surface of the antireflection film. Thus, an X-ray mask having excellent pattern positional accuracy and a method of fabricating the same are obtained.
摘要翻译：形成在X射线掩模的膜上的抗反射膜具有非晶结构。拦截X射线透射的图案化X射线吸收体被形成为与抗反射膜的前表面接触。因此，获得具有优异的图案位置精度的X射线掩模及其制造方法。

8. 发明授权

US5496667A X-ray mask and its fabrication method 失效
标题翻译： X射线掩模及其制造方法
公开(公告)号：US5496667A
公开(公告)日：1996-03-05
申请号：US427986
申请日：1995-04-24
申请人： Hideki Yabe , Kenji Marumoto , Nobuyuki Yoshioka
发明人： Hideki Yabe , Kenji Marumoto , Nobuyuki Yoshioka
IPC分类号： C23C14/14 , C23C14/06 , C23C14/34 , G03F1/22 , G03F1/54 , G03F7/09 , H01L21/027 , H01L21/285 , G03F9/00
CPC分类号： G03F1/22 , G03F1/54 , G03F7/091
摘要： In order to provide an X-ray absorber low in the internal stress and suitable for forming a high accurate pattern and its fabrication method, an X-ray absorber for an X-ray mask is intended to contain tungsten and nitrogen, or tungsten, titanium and nitrogen, and to have an amorphous structure.
摘要翻译：为了提供低内应力的X射线吸收体，适用于形成高精度图案及其制造方法，用于X射线掩模的X射线吸收体旨在含有钨和氮或钨，钛和氮，并具有非晶结构。

9. 发明授权

US06898267B2 X-ray mask 失效
标题翻译： X光掩模
公开(公告)号：US06898267B2
公开(公告)日：2005-05-24
申请号：US10282208
申请日：2002-10-29
申请人： Hiroshi Watanabe , Kouji Kise , Hideki Yabe
发明人： Hiroshi Watanabe , Kouji Kise , Hideki Yabe
IPC分类号： G03F1/22 , G03F1/68 , G03F7/20 , H01L21/027 , G21K5/00
CPC分类号： G03F1/20 , G03F1/22 , G03F1/29 , G03F1/32
摘要： In an x-ray absorber in accordance with the present invention, reduced transmittance of the x-ray absorber is suppressed while phase shift amount in the vicinity of π-radians is achieved. For this purpose, a material is used that has a high transmittance per film thickness and contains an element with a high phase shift amount and an element with a low transmittance, as a material composition that forms the x-ray absorber. In other words, the transmittance of the x-ray absorber is mainly determined by the element with a low transmittance, and phase shift falling short of π-radians is compensated with the element with a high transmittance and a high phase shift.
摘要翻译：在根据本发明的x射线吸收器中，抑制了x射线吸收体的透射率降低，同时实现了π弧度附近的相移量。为此目的，使用材料，其作为形成x射线吸收体的材料组合物，每个膜厚度具有高透射率并且含有高相移量的元素和具有低透射率的元素。换句话说，x射线吸收体的透射率主要由具有低透射率的元素决定，并且具有高透射率和高相移的元素补偿了低于π弧度的相移。

10. 发明授权

US07350406B2 Sensor chip breaking strength inspection apparatus and sensor chip breaking strength inspection method 有权
标题翻译：传感器芯片断裂强度检测装置和传感器芯片断裂强度检测方法
公开(公告)号：US07350406B2
公开(公告)日：2008-04-01
申请号：US11279606
申请日：2006-04-13
申请人： Hideki Yabe , Yuichi Sakai , Yoshitatsu Kawama , Munehito Kumagai , Yasuyuki Nakaoka
发明人： Hideki Yabe , Yuichi Sakai , Yoshitatsu Kawama , Munehito Kumagai , Yasuyuki Nakaoka
IPC分类号： G01M19/00
CPC分类号： G01N3/08 , G01N2203/0042 , G01N2203/0044 , G01N2203/0282 , G01N2203/0647
摘要： A sensor chip breaking strength inspection apparatus that performs sensor chip breaking strength inspection on a semiconductor wafer on which a plurality of sensor chips having a diaphragm portion are disposed includes: a stage on which the semiconductor wafer is mounted; and a nozzle that emits a medium onto the sensor chips at a pressure equivalent to a standard breaking strength of the sensor chips.
摘要翻译：在其上设置有多个具有膜片部分的传感器芯片的半导体晶片上执行传感器芯片断裂强度检查的传感器芯片断裂强度检查装置包括：安装半导体晶片的台阶; 以及以与传感器芯片的标准断裂强度相当的压力将介质发射到传感器芯片上的喷嘴。

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