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    • 9. 发明申请
    • PHYSICAL QUANTITY DETECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 物理量检测装置及其制造方法
    • US20110248363A1
    • 2011-10-13
    • US13083732
    • 2011-04-11
    • Tetsuo FUJIIMinekazu SakaiTakumi Shibata
    • Tetsuo FUJIIMinekazu SakaiTakumi Shibata
    • H01L29/84H01L21/20
    • G01L9/0005
    • A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.
    • 物理量检测装置包括:绝缘层; 绝缘层上的半导体层; 以及半导体层中的第一和第二电极。 每个电极具有壁部分,其中一个包括两个隔膜和盖部分。 彼此相对的隔膜提供具有由盖部分覆盖的开口的中空圆柱体。 一个隔膜面对另一个壁部分或另一个壁部分的一个隔膜。 当物理量施加到隔膜时,一个隔膜和另一个壁部分中的另一个壁部分或一个隔膜之间的距离随空心圆柱体中的参考压力和外部压力之间的压力差而改变。 物理量由第一和第二电极之间的电容检测。
    • 10. 发明授权
    • Semiconductor device for providing capacitive semiconductor sensor and method for manufacturing capacitive semiconductor sensor
    • 用于提供电容半导体传感器的半导体器件和用于制造电容半导体传感器的方法
    • US07678589B2
    • 2010-03-16
    • US11723428
    • 2007-03-20
    • Minekazu SakaiTameharu Oota
    • Minekazu SakaiTameharu Oota
    • H01L21/66
    • G01P15/125B81C1/00238B81C99/004G01P15/0802H01L2224/94
    • A method for manufacturing a capacitive semiconductor sensor includes: forming a plurality of circuit chips in a wafer, wherein each circuit chip includes a pad for testing a sensor chip; bonding the sensor chip on each circuit chip with a bump so that the sensor chip is electrically coupled with the circuit chip, wherein each sensor chip is made of semiconductor and has a capacitance changing portion, which is disposed on one side of the sensor chip and has a variable capacitance, wherein the circuit chip detects a capacitance change of the sensor chip, and wherein the one side of the sensor chip faces the circuit chip; testing each sensor chip through the pad; and cutting the wafer into individual circuit chips so that the circuit chip and the sensor chip provide the capacitive semiconductor sensor.
    • 制造电容式半导体传感器的方法包括:在晶片中形成多个电路芯片,其中每个电路芯片包括用于测试传感器芯片的焊盘; 将每个电路芯片上的传感器芯片与凸块接合,使得传感器芯片与电路芯片电耦合,其中每个传感器芯片由半导体制成,并具有电容改变部分,其设置在传感器芯片的一侧, 具有可变电容,其中电路芯片检测传感器芯片的电容变化,并且其中传感器芯片的一侧面向电路芯片; 通过垫片测试每个传感器芯片; 并将晶片切割成单独的电路芯片,使得电路芯片和传感器芯片提供电容半导体传感器。