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1. 发明授权

US08368474B2 Surface acoustic wave oscillator 失效
标题翻译：表面声波振荡器
公开(公告)号：US08368474B2
公开(公告)日：2013-02-05
申请号：US13110990
申请日：2011-05-19
申请人： Kazuki Arakawa , Kazuhiko Kano
发明人： Kazuki Arakawa , Kazuhiko Kano
IPC分类号： H03B9/12
CPC分类号： H03B5/326
摘要： In a SAW oscillator, each of a first SAW element and a second SAW element includes interdigital electrodes and a reflector formed on a piezoelectric material. A first oscillating circuit part forms an oscillating loop including the first SAW element. A second oscillating circuit part forms an oscillating loop including the second SAW element. The first and second oscillating circuit parts have an identical admittance property. The first and second SAW elements are configured that an electrode pitch is identical and an admittance property indicating a relation between a frequency and an admittance value is different therebetween. Further, a first intersection point between the admittance property of the first SAW element and the admittance property of the first oscillating circuit part and a second intersection point between the admittance property of the second SAW element and the admittance property of the second oscillating circuit part are at different frequencies.
摘要翻译：在SAW振荡器中，第一SAW元件和第二SAW元件中的每一个包括叉指电极和形成在压电材料上的反射器。第一振荡电路部分形成包括第一SAW元件的振荡回路。第二振荡电路部分形成包括第二SAW元件的振荡回路。第一和第二振荡电路部件具有相同的导纳特性。第一和第二SAW元件被构造成电极间距相同，并且指示频率和导纳值之间的关系的导纳特性在它们之间是不同的。此外，第一SAW元件的导纳特性和第一振荡电路部分的导纳特性与第二SAW元件的导纳特性与第二振荡电路部分的导纳特性之间的第二交点之间的第一交点是在不同的频率。

2. 发明申请

US20130026882A1 SURFACE ACOUSTIC WAVE SENSOR 有权
标题翻译：表面声波传感器
公开(公告)号：US20130026882A1
公开(公告)日：2013-01-31
申请号：US13557378
申请日：2012-07-25
申请人： Hideaki YAMADA , Kazuhiko Kano
发明人： Hideaki YAMADA , Kazuhiko Kano
IPC分类号： H01L41/04
CPC分类号： H01L41/1132 , G01N29/2462 , G01N29/38 , G01N29/42 , G01N2291/0423 , H03H9/02622 , H03H9/058 , H03H9/0585
摘要： In a SAW device, a first area placed at a surface of a measurement subject directly under a propagation portion is fixed to the measurement subject, and a second area placed at the surface of the measurement subject directly under both a drive electrode and a reflector is not fixed to the measurement subject. When a strain is generated in the measurement subject, a strain is generated only in the propagation portion, and a phase change is generated in a surface acoustic wave reflected by the reflector. Because the phase change is hardly affected by a temperature change, the strain of the measurement subject can be measured based on the phase change. Because a resonant frequency of the SAW device is changed by the temperature change, but is not affected by the strain of the measurement subject, a temperature can be measured based on a resonant frequency change.
摘要翻译：在SAW器件中，将直接位于传播部分的测量对象的表面的第一区域固定在测定对象上，在测量对象的表面直接位于驱动电极和反射体的下方的第二区域是没有固定在测量对象上。当在测量对象中产生应变时，仅在传播部分中产生应变，并且在由反射器反射的表面声波中产生相变。由于相变几乎不受温度变化的影响，所以测量对象的应变可以基于相位变化来测量。由于SAW器件的谐振频率由于温度变化而变化，而是不受测量对象的应变的影响，所以可以基于谐振频率变化来测量温度。

3. 发明授权

US08330557B2 Surface acoustic wave device having concentrically arranged electrodes 有权
标题翻译：表面声波装置具有同心布置的电极
公开(公告)号：US08330557B2
公开(公告)日：2012-12-11
申请号：US12659197
申请日：2010-02-26
申请人： Hideaki Yamada , Kazuhiko Kano
发明人： Hideaki Yamada , Kazuhiko Kano
IPC分类号： H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/14547
摘要： A surface acoustic wave device is disclosed. The surface acoustic wave device includes: a substrate having a plane surface; multiple first electrodes formed on the plane surface of the substrate; and multiple second electrodes formed on the plane surface of the substrate. Each of the first and second electrodes has a predetermined closed ring shape. The first and second electrodes are concentric. The second electrodes are located radially inside or radially outside of the first electrodes.
摘要翻译：公开了一种表面声波装置。声表面波装置包括：具有平面的基板; 在基板的平面上形成多个第一电极; 以及形成在基板的平面上的多个第二电极。第一和第二电极中的每一个具有预定的闭环形状。第一和第二电极是同心的。第二电极位于第一电极的径向内侧或径向外侧。

4. 发明申请

US20110285470A1 SURFACE ACOUSTIC WAVE OSCILLATOR 失效
标题翻译：表面声波振荡器
公开(公告)号：US20110285470A1
公开(公告)日：2011-11-24
申请号：US13110990
申请日：2011-05-19
申请人： Kazuki ARAKAWA , Kazuhiko KANO
发明人： Kazuki ARAKAWA , Kazuhiko KANO
IPC分类号： H03B1/00
CPC分类号： H03B5/326
摘要： In a SAW oscillator, each of a first SAW element and a second SAW element includes interdigital electrodes and a reflector formed on a piezoelectric material. A first oscillating circuit part forms an oscillating loop including the first SAW element. A second oscillating circuit part forms an oscillating loop including the second SAW element. The first and second oscillating circuit parts have an identical admittance property. The first and second SAW elements are configured that an electrode pitch is identical and an admittance property indicating a relation between a frequency and an admittance value is different therebetween. Further, a first intersection point between the admittance property of the first SAW element and the admittance property of the first oscillating circuit part and a second intersection point between the admittance property of the second SAW element and the admittance property of the second oscillating circuit part are at different frequencies.
摘要翻译：在SAW振荡器中，第一SAW元件和第二SAW元件中的每一个包括叉指电极和形成在压电材料上的反射器。第一振荡电路部分形成包括第一SAW元件的振荡回路。第二振荡电路部分形成包括第二SAW元件的振荡回路。第一和第二振荡电路部件具有相同的导纳特性。第一和第二SAW元件被构造成电极间距相同，并且指示频率和导纳值之间的关系的导纳特性在它们之间是不同的。此外，第一SAW元件的导纳特性和第一振荡电路部分的导纳特性与第二SAW元件的导纳特性与第二振荡电路部分的导纳特性之间的第二交点之间的第一交点是在不同的频率。

5. 发明授权

US06953753B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06953753B2
公开(公告)日：2005-10-11
申请号：US10373964
申请日：2003-02-27
申请人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
发明人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , H01L21/302
CPC分类号： B81C1/0019 , B81B2201/0235 , B81B2203/033 , B81C1/00579 , B81C2201/0132 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10T428/169
摘要： A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer such that the insulating layer is located between the semiconductor layer and the semiconductor substrate. The method further includes a step of dry etching the semiconductor layer to form a trench with a charge prevented from building up on a surface of the insulating layer that is exposed at a bottom of the trench during the dry etching. The method further includes a step of dry etching a sidewall defining the trench at a portion adjacent to the bottom of the trench to form the movable unit. The later dry etching is performed with a charge building up on the surface of the insulating layer such that etching ions strike to etch the portion of the sidewall.
摘要翻译：一种具有可移动单元的半导体器件的制造方法包括：形成包括半导体衬底，绝缘层和半导体层的SOI衬底的步骤，使得绝缘层位于半导体层和半导体衬底之间。该方法还包括干法蚀刻半导体层以形成沟槽的步骤，其中在干蚀刻期间，在沟槽底部露出的绝缘层的表面上阻止电荷积聚。该方法还包括在邻近沟槽底部的部分干蚀刻限定沟槽的侧壁以形成可移动单元的步骤。稍后的干法蚀刻是通过在绝缘层的表面上积聚的电荷进行的，使得蚀刻离子发生蚀刻以蚀刻侧壁的一部分。

6. 发明授权

US06388300B1 Semiconductor physical quantity sensor and method of manufacturing the same 有权
标题翻译：半导体物理量传感器及其制造方法
公开(公告)号：US06388300B1
公开(公告)日：2002-05-14
申请号：US09490372
申请日：2000-01-24
申请人： Kazuhiko Kano , Junji Ohara , Nobuyuki Ohya
发明人： Kazuhiko Kano , Junji Ohara , Nobuyuki Ohya
IPC分类号： H01L2994
CPC分类号： B81B3/0086 , B81B2201/0235 , B81B2203/0136 , B81B2203/0315 , B81B2203/04 , G01C19/5656 , G01P15/0802 , G01P15/125 , G01P15/131 , G01P2015/0814
摘要： A semiconductor physical quantity sensor, in which a beam-structure having a movable electrode and a fixed electrode confronted with the movable electrode are integrally formed in one substrate, having a new electric isolation structure. A semiconductor physical quantity sensor such as an acceleration sensor includes a silicon substrate; a laterally extending hollow formed in the silicon substrate; and a base plate portion defined below the hollow in the silicon substrate. A rectangular frame portion, a beam-structure having a movable electrode, and a fixed electrode is defined by the hollow and trenches. The fixed electrode confronts with the movable electrodes of the beam-structure. Trenches, in which electrical insulating material is buried, are formed between the movable electrode and the rectangular frame portion and between the fixed electrodes and the rectangular frame portion.
摘要翻译：一种半导体物理量传感器，其中具有可移动电极的束结构和面对可动电极的固定电极一体地形成在一个基板中，具有新的电隔离结构。诸如加速度传感器的半导体物理量传感器包括硅衬底; 形成在硅衬底中的横向延伸的中空; 以及限定在硅衬底中的中空部下方的基板部。由中空和沟槽限定矩形框架部分，具有可移动电极的束结构和固定电极。固定电极与梁结构的可动电极相对。在可动电极和矩形框架部分之间以及在固定电极和矩形框架部分之间形成有埋入电绝缘材料的沟槽。

7. 发明授权

US06277756B1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06277756B1
公开(公告)日：2001-08-21
申请号：US09501762
申请日：2000-02-10
申请人： Junji Ohara , Shinji Yoshihara , Kazuhiko Kano , Nobuyuki Ohya
发明人： Junji Ohara , Shinji Yoshihara , Kazuhiko Kano , Nobuyuki Ohya
IPC分类号： H01L21311
CPC分类号： G01P15/0802 , B81B2203/033 , B81C1/00619 , B81C2201/0112 , H01L21/30655 , H01L21/762
摘要： A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.
摘要翻译：一种制造半导体器件的方法，其可以通过相对简单的步骤有效地形成具有高纵横比的沟槽。通过使用氧化物膜掩模作为蚀刻掩模的反应离子蚀刻在硅衬底中形成初始沟槽。在沟槽的内表面上形成保护氧化膜之后，通过反应离子蚀刻去除沟槽底面的位置的保护氧化膜的一部分，使得硅衬底的蚀刻通过沟槽的底面。此外，重复执行用于形成保护氧化膜的步骤和重新蚀刻沟槽的底表面的步骤，使得沟槽的深度变为预定深度。这些步骤通过使用等离子体处理的切换气体被引入腔室在公共室中进行。

8. 发明授权

US6048774A Method of manufacturing dynamic amount semiconductor sensor 失效
标题翻译：动态量半导体传感器的制造方法
公开(公告)号：US6048774A
公开(公告)日：2000-04-11
申请号：US103935
申请日：1998-06-25
申请人： Toshimasa Yamamoto , Nobuyuki Kato , Kazuhiko Kano , Makiko Sugiura
发明人： Toshimasa Yamamoto , Nobuyuki Kato , Kazuhiko Kano , Makiko Sugiura
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , G01P15/13
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： In a method of manufacturing a dynamic amount sensor including a beam structure and a fixed electrode which are respectively supported by anchor parts of a substrate, opening portions are formed on a first semiconductor substrate where the anchor parts are to be formed. Each of the opening portions is composed of a plurality of stripe-like openings. Then a first thin film for forming the anchor parts and a second thin film are formed on the first semiconductor substrate in that order. After the surface of the second thin film is polished, a second semiconductor substrate is bonded to the polished surface of the second thin film. In this method, because the opening portions are composed of the plurality of stripe-like openings, the second thin film is flattened without having any steps thereon.
摘要翻译：在制造分别由基板的锚定部支撑的梁结构和固定电极的动态量传感器的制造方法中，在要形成锚定部的第一半导体基板上形成开口部。每个开口部分由多个条状开口组成。然后在第一半导体衬底上依次形成用于形成锚定部分的第一薄膜和第二薄膜。在第二薄膜的表面被抛光之后，第二半导体衬底被结合到第二薄膜的抛光表面上。在该方法中，由于开口部分由多个条状开口组成，所以第二薄膜在其上没有任何步骤而变平。

9. 发明授权

US5922212A Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body 失效
标题翻译：具有悬浮薄膜结构的半导体传感器和用于制造薄膜结构体的方法
公开(公告)号：US5922212A
公开(公告)日：1999-07-13
申请号：US663001
申请日：1996-06-07
申请人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
发明人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , C23F1/00
CPC分类号： G01P15/125 , B81B3/0072 , B81C1/00666 , G01P15/0802 , B81C2201/0164 , B81C2201/0167 , B81C2201/017 , G01P2015/0814
摘要： A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.
摘要翻译：公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。

10. 发明授权

US5864064A Acceleration sensor having coaxially-arranged fixed electrode and movable electrode 失效
标题翻译：具有同轴布置的固定电极和可动电极的加速度传感器
公开(公告)号：US5864064A
公开(公告)日：1999-01-26
申请号：US717405
申请日：1996-09-20
申请人： Kazuhiko Kano , Yoshinori Ohtsuka , Norio Kitao , Kenichi Ao , Yasutoshi Suzuki
发明人： Kazuhiko Kano , Yoshinori Ohtsuka , Norio Kitao , Kenichi Ao , Yasutoshi Suzuki
IPC分类号： G01P15/00 , G01H1/00 , G01P15/02 , G01P15/08 , G01P15/125 , G01P15/135 , G01P15/18
CPC分类号： G01P15/125 , G01P15/0802 , G01P15/135 , G01P15/18
摘要： An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.
摘要翻译：一个加速度传感器是由一个基板，一个被加速移位的一个圆柱形的自重的可移动电极构成的，一个固定的电极从一个圆柱体中空的一个固定的电极，一个设置在基板上的圆柱形的锚固件，用于支撑自重的可动电极具有弹性可变形结构材料和梁。当从外部施加加速度时，固定电极的圆柱形检测面和固定电极的圆柱形检测面在与基板平行的二维平面上接触，并且加速度传感器检测接触。考虑到光束的弹性模量，设定了自重移动电极的检测面与固定电极的检测面之间的径向间隔，从而可以各向异性地检测外力，并且加速度传感器检测到二次加速度非定向平面。

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