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1. 发明授权

US07670918B2 Semiconductor device having impurity-doped resistor element 有权
标题翻译：具有杂质掺杂电阻元件的半导体器件
公开(公告)号：US07670918B2
公开(公告)日：2010-03-02
申请号：US12007720
申请日：2008-01-15
申请人： Yuko Fukami , Ryuichiro Abe
发明人： Yuko Fukami , Ryuichiro Abe
IPC分类号： H01L21/20
CPC分类号： G01F1/6845 , H01L28/20
摘要： Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The impurity density in the single crystal silicon is made lower than 1×1020/cm3 to suppress a resistance change by aging especially at a temperature higher than 310° C. To obtain a high temperature coefficient of the resistor element as well as a low resistance change by aging, the impurity density is set in a range from 4×1019/cm3 to 1×1020/cm3, and more preferably in a range from 7×1019/cm3 to 1×1020/cm3. As the impurity, N-type impurity such as phosphorus or P-type impurity such as boron may be used. It is preferable to use the impurity having a low diffusion coefficient to attain a low resistance change by aging.
摘要翻译：通过将杂质掺杂到诸如绝缘体上硅衬底之类的衬底上形成的单晶膜中形成电阻元件。具有这种电阻元件的半导体器件例如用作检测气流量的检测器。单晶硅中的杂质浓度低于1×10 10 / cm 3，以防止老化时的电阻变化，特别是在高于310℃的温度下。为了获得电阻元件的高温系数以及低电阻通过老化改变，杂质浓度设定在4×1019 / cm3〜1×1020 / cm3的范围内，更优选在7×1019 / cm3〜1×1020 / cm3的范围内。作为杂质，可以使用诸如磷的N型杂质或诸如硼的P型杂质。优选使用低扩散系数的杂质通过老化获得低电阻变化。

2. 发明申请

US20080188027A1 Semiconductor device having impurity-doped resistor element 有权
标题翻译：具有杂质掺杂电阻元件的半导体器件
公开(公告)号：US20080188027A1
公开(公告)日：2008-08-07
申请号：US12007720
申请日：2008-01-15
申请人： Yuko Fukami , Ryuichiro Abe
发明人： Yuko Fukami , Ryuichiro Abe
IPC分类号： H01L21/02
CPC分类号： G01F1/6845 , H01L28/20
摘要： Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The impurity density in the single crystal silicon is made lower than 1×1020/cm3 to suppress a resistance change by aging especially at a temperature higher than 310° C. To obtain a high temperature coefficient of the resistor element as well as a low resistance change by aging, the impurity density is set in a range from 4×1019/cm3 to 1×1020/cm3, and more preferably in a range from 7×1019/cm3 to 1×1020/cm3. As the impurity, N-type impurity such as phosphor or P-type impurity such as boron may be used. It is preferable to use the impurity having a low diffusion coefficient to attain a low resistance change by aging.
摘要翻译：通过将杂质掺杂到诸如绝缘体上硅衬底之类的衬底上形成的单晶膜中形成电阻元件。具有这种电阻元件的半导体器件例如用作检测气流量的检测器。使单晶硅中的杂质浓度低于1×10 20 / cm 3，以通过老化特别是在高于310℃的温度下抑制电阻变化。为了获得电阻元件的高温系数以及通过老化的低电阻变化，杂质浓度设定在4×10 19 / cm 3〜1×10 -6以下的范围内 > 20 / cm 3，更优选在7×10 19 / cm 3至1×10 20的范围内， / SUP> / cm 3。作为杂质，可以使用诸如磷的N型杂质或诸如硼的P型杂质。优选使用低扩散系数的杂质通过老化获得低电阻变化。

3. 发明申请

US20070090536A1 Sensor having semiconductor chip and circuit chip 审中-公开
标题翻译：传感器具有半导体芯片和电路芯片
公开(公告)号：US20070090536A1
公开(公告)日：2007-04-26
申请号：US11522916
申请日：2006-09-19
申请人： Minekazu Sakai , Ryuichiro Abe , Yasunori Ninomiya
发明人： Minekazu Sakai , Ryuichiro Abe , Yasunori Ninomiya
IPC分类号： H01L23/48
CPC分类号： G01C19/5719 , B81C1/0023 , G01P1/023 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/16 , H01L2924/01068 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： A sensor includes: a semiconductor chip having a sensing portion; a circuit chip; and first and second films. The sensing portion is disposed on a first side of the semiconductor chip. The first side of the semiconductor chip is electrically connected to the circuit chip through a bump. The first side of the semiconductor chip faces the circuit chip. The first film is disposed on the first side of the semiconductor chip. The first film covers the sensing portion, and is made of resin, and the second film is made of resin, and disposed on a second side of the semiconductor chip.
摘要翻译：传感器包括：具有感测部分的半导体芯片; 电路芯片; 第一和第二部电影。感测部分设置在半导体芯片的第一侧上。半导体芯片的第一侧通过凸块与电路芯片电连接。半导体芯片的第一面面向电路芯片。第一膜设置在半导体芯片的第一侧上。第一膜覆盖感测部分，并且由树脂制成，第二膜由树脂制成，并且设置在半导体芯片的第二侧上。

4. 发明授权

US07770452B2 Semiconductor sensor and manufacturing method therefor 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：US07770452B2
公开(公告)日：2010-08-10
申请号：US12081512
申请日：2008-04-17
申请人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
发明人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
IPC分类号： G01P15/00
CPC分类号： G01P15/0802 , B81B7/007 , G01P15/125 , G01P2015/0814 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/0566 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85201 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/30105 , H01L2924/3025 , Y10T29/49002 , H01L2924/00 , H01L2224/4876 , H01L2224/4866
摘要： A semiconductor sensor is disclosed that includes a semiconductor substrate, a sensing portion provided on the semiconductor substrate, and a pad in electrical communication with the sensing portion and provided on the semiconductor substrate. The semiconductor sensor also includes a bonding wire in electrical communication with the pad. Furthermore, the semiconductor sensor includes a cover member with a covering portion disposed over the semiconductor substrate for covering the sensing portion such that the covering portion is separated at a distance from the sensing portion. The cover member further includes a coupling portion provided on the semiconductor substrate at an area including the pad and for enabling electrical connection of the pad with the bonding wire therethrough.
摘要翻译：公开了一种半导体传感器，其包括半导体衬底，设置在半导体衬底上的感测部分，以及与感测部分电连接并设置在半导体衬底上的焊盘。半导体传感器还包括与焊盘电连通的接合线。此外，半导体传感器包括覆盖部件，覆盖部分设置在半导体衬底上，用于覆盖感测部分，使得覆盖部分与感测部分隔开一段距离。所述盖构件还包括在包括所述焊盘的区域处设置在所述半导体衬底上的耦合部分，并且用于使所述焊盘与所述接合线电连接。

5. 发明授权

US07541574B2 Sensor device 失效
标题翻译：传感器装置
公开(公告)号：US07541574B2
公开(公告)日：2009-06-02
申请号：US11802612
申请日：2007-05-24
申请人： Yasunori Ninomiya , Ryuichiro Abe
发明人： Yasunori Ninomiya , Ryuichiro Abe
IPC分类号： G01P15/00 , H01J5/02
CPC分类号： G01P15/125 , G01P1/023 , G01P15/0802 , G01P2015/0814
摘要： A sensor device includes a board, a sensor element and a resin member made of resin. The sensor element has a displace part to be displaced in a predetermined detection direction, and detects a displace amount of the displace part in the detection direction. The sensor element is mounted and connected to the board through the resin member. The resin member is arranged between the sensor element and the board in part such that a warp of the sensor element in the detection direction due to a temperature variation is smaller than a warp of the sensor element in a direction except for the detection direction.
摘要翻译：传感器装置包括板，传感器元件和树脂制的树脂构件。传感器元件具有在预定检测方向上移位的位移部，并且检测位移部在检测方向上的位移量。传感器元件通过树脂构件安装并连接到板。树脂构件部分地布置在传感器元件和板之间，使得由于温度变化而导致的检测方向上的传感器元件的翘曲小于除了检测方向以外的方向上的传感器元件的翘曲。

6. 发明申请

US20080196501A1 Semiconductor sensor and manufacturing method therefor 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：US20080196501A1
公开(公告)日：2008-08-21
申请号：US12081512
申请日：2008-04-17
申请人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
发明人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
IPC分类号： G01P15/125
CPC分类号： G01P15/0802 , B81B7/007 , G01P15/125 , G01P2015/0814 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/0566 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85201 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/30105 , H01L2924/3025 , Y10T29/49002 , H01L2924/00 , H01L2224/4876 , H01L2224/4866
摘要： A semiconductor sensor is disclosed that includes a semiconductor substrate, a sensing portion provided on the semiconductor substrate, and a pad in electrical communication with the sensing portion and provided on the semiconductor substrate. The semiconductor sensor also includes a bonding wire in electrical communication with the pad. Furthermore, the semiconductor sensor includes a cover member with a covering portion disposed over the semiconductor substrate for covering the sensing portion such that the covering portion is separated at a distance from the sensing portion. The cover member further includes a coupling portion provided on the semiconductor substrate at an area including the pad and for enabling electrical connection of the pad with the bonding wire therethrough.
摘要翻译：公开了一种半导体传感器，其包括半导体衬底，设置在半导体衬底上的感测部分，以及与感测部分电连接并设置在半导体衬底上的焊盘。半导体传感器还包括与焊盘电连通的接合线。此外，半导体传感器包括覆盖部件，覆盖部分设置在半导体衬底上，用于覆盖感测部分，使得覆盖部分与感测部分隔开一段距离。盖构件还包括在包括衬垫的区域处设置在半导体衬底上的耦合部分，并且用于使焊盘与通过其的接合线电连接。

7. 发明授权

US07373821B2 Semiconductor sensor and manufacturing method therefor 失效
公开(公告)号：US07373821B2
公开(公告)日：2008-05-20
申请号：US11455919
申请日：2006-06-20
申请人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
发明人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
IPC分类号： G01P15/00
CPC分类号： G01P15/0802 , B81B7/007 , G01P15/125 , G01P2015/0814 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/0566 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85201 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/30105 , H01L2924/3025 , Y10T29/49002 , H01L2924/00 , H01L2224/4876 , H01L2224/4866
摘要： A semiconductor sensor is disclosed that includes a semiconductor substrate, a sensing portion provided on the semiconductor substrate, and a pad in electrical communication with the sensing portion and provided on the semiconductor substrate. The semiconductor sensor also includes a bonding wire in electrical communication with the pad. Furthermore, the semiconductor sensor includes a cover member with a covering portion disposed over the semiconductor substrate for covering the sensing portion such that the covering portion is separated at a distance from the sensing portion. The cover member further includes a coupling portion provided on the semiconductor substrate at an area including the pad and for enabling electrical connection of the pad with the bonding wire therethrough.

8. 发明授权

US07470996B2 Packaging method 有权
标题翻译：包装方式
公开(公告)号：US07470996B2
公开(公告)日：2008-12-30
申请号：US11484700
申请日：2006-07-12
申请人： Takao Yoneyama , Kimiharu Kayukawa , Nobuya Makino , Ryuichiro Abe
发明人： Takao Yoneyama , Kimiharu Kayukawa , Nobuya Makino , Ryuichiro Abe
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/00 , B23K1/06 , B23K5/20 , B23K20/10
CPC分类号： B23K20/10 , B23K2101/40 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/05567 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81193 , H01L2224/81205 , H01L2224/81801 , H01L2224/83191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： A packaging method includes ultrasonically bonding a semiconductor device and a substrate together via bumps that include gold as a main component thereof. A contact surface of a primary bump on a surface of an aluminum pad on one side of the substrate contacts and is ultrasonically bonded to a distal end surface of each opposed secondary bump on one side of the semiconductor device. An area of the contact surface is larger than that of the opposed distal end surface. By this method, damage to the substrate from the ultrasonic can be reduced without using a reinforcing layer.
摘要翻译：封装方法包括通过包括金作为其主要成分的凸块将半导体器件和衬底超声波接合在一起。基板的一侧的铝焊盘表面上的主凸块的接触表面接触，并且超声波接合到半导体器件的一侧上的每个相对的次级凸块的远端表面。接触表面的面积大于相对的远端表面的面积。通过这种方法，可以减少来自超声波的基板的损伤，而不使用增强层。

9. 发明授权

US07327004B2 Sensor device 有权
标题翻译：传感器装置
公开(公告)号：US07327004B2
公开(公告)日：2008-02-05
申请号：US11294580
申请日：2005-12-06
申请人： Koji Hattori , Takao Yoneyama , Ryuichiro Abe , Minekazu Sakai , Shigenori Yamauchi
发明人： Koji Hattori , Takao Yoneyama , Ryuichiro Abe , Minekazu Sakai , Shigenori Yamauchi
IPC分类号： H01L29/84
CPC分类号： G01C19/5719 , B81C1/0023 , B81C1/00238 , G01P1/023 , G01P15/125 , H01L2224/48091 , H01L2224/73265 , H01L2924/1305 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A sensor device includes a sensor chip having a movable portion on one surface, a circuit chip laminated with the sensor chip to be opposite to the movable portion of the sensor chip, and a bump located between the sensor chip and the circuit chip. In the sensor device, the sensor chip and the circuit chip are electrically connected through the bump, and the movable portion of the sensor chip is separated from the circuit chip by a space using the bump. Accordingly, it can effectively restrict parasitic capacity of an electric connecting portion between both the chips from being changed by an impact. For example, the sensor device can be used as an angular velocity sensor device having a vibrator as the movable portion.
摘要翻译：传感器装置包括在一个表面上具有可移动部分的传感器芯片，与传感器芯片层叠以与传感器芯片的可移动部分相对的电路芯片，以及位于传感器芯片和电路芯片之间的凸块。在传感器装置中，传感器芯片和电路芯片通过凸块电连接，并且传感器芯片的可移动部分使用凸块与电路芯片分离。因此，能够有效地抑制两个芯片之间的电连接部的寄生容量受到冲击而变化。例如，传感器装置可以用作具有振动器作为可动部分的角速度传感器装置。

10. 发明申请

US20070284713A1 Sensor device 失效
标题翻译：传感器装置
公开(公告)号：US20070284713A1
公开(公告)日：2007-12-13
申请号：US11802612
申请日：2007-05-24
申请人： Yasunori Ninomiya , Ryuichiro Abe
发明人： Yasunori Ninomiya , Ryuichiro Abe
IPC分类号： H01L23/02
CPC分类号： G01P15/125 , G01P1/023 , G01P15/0802 , G01P2015/0814
摘要： A sensor device includes a board, a sensor element and a resin member made of resin. The sensor element has a displace part to be displaced in a predetermined detection direction, and detects a displace amount of the displace part in the detection direction. The sensor element is mounted and connected to the board through the resin member. The resin member is arranged between the sensor element and the board in part such that a warp of the sensor element in the detection direction due to a temperature variation is smaller than a warp of the sensor element in a direction except for the detection direction.
摘要翻译：传感器装置包括板，传感器元件和树脂制的树脂构件。传感器元件具有在预定检测方向上移位的位移部，并且检测位移部在检测方向上的位移量。传感器元件通过树脂构件安装并连接到板。树脂构件部分地布置在传感器元件和板之间，使得由于温度变化而导致的检测方向上的传感器元件的翘曲小于除了检测方向以外的方向上的传感器元件的翘曲。

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