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1. 发明申请

US20110215435A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20110215435A1
公开(公告)日：2011-09-08
申请号：US13038349
申请日：2011-03-01
申请人： Hiroki WAKIMOTO , Kenichi Iguchi , Koh Yoshikawa , Tsunehiro Nakajima , Shunsuke Tanaka , Masaaki Ogino
发明人： Hiroki WAKIMOTO , Kenichi Iguchi , Koh Yoshikawa , Tsunehiro Nakajima , Shunsuke Tanaka , Masaaki Ogino
IPC分类号： H01L29/06 , H01L21/78 , H01L21/302
CPC分类号： H01L21/308 , H01L21/302 , H01L21/78 , H01L29/06
摘要： Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.
摘要翻译：本发明的一些实施例涉及能够防止电特性劣化的半导体器件和半导体器件的制造方法。 p型集电极区域设置在n型漂移区域的背面的表面层上。在元件的末端提供了用于获得反向阻挡能力的p +型隔离层。此外，设置从n型漂移区的背面向p +型隔离层延伸的凹部。提供p型区域并且电连接到p +型隔离层。提供p +型隔离层，以便包括具有作为一侧的凹部的底部和侧壁之间的边界的解理面。

2. 发明申请

US20110291241A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110291241A1
公开(公告)日：2011-12-01
申请号：US13116650
申请日：2011-05-26
申请人： Koh YOSHIKAWA , Kenichi Iguchi
发明人： Koh YOSHIKAWA , Kenichi Iguchi
IPC分类号： H01L29/06
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/404
摘要： A semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure between an active region and an isolation region, the edge termination structure being composed of an edge termination structure for a forward bias section and an edge termination structure for a reverse bias section. A plurality of field limiting rings (FLRs) and a plurality of field plates (FPs) are provided in the edge termination structure for the forward bias section and the edge termination structure for the reverse bias section. A first forward FP that is the nearest of the plurality of FPs to the edge termination structure for the reverse bias section is formed to extend towards the isolation region side. A first reverse FP that is the nearest of the plurality of FPs to the edge termination structure for the forward bias section is formed to extend towards the active region side. The first reverse FP stops the depletion layer expanding from the active region on application of a forward voltage. The first forward FP stops the depletion layer expanding from the isolation region on application of a reverse voltage.
摘要翻译：具有减小的尺寸并且具有优异的阻挡电压能力的半导体器件。半导体器件包括在有源区和隔离区之间的边缘终端结构，边缘终端结构由用于正偏压部分的边缘终端结构和用于反向偏压部分的边缘终端结构组成。在用于正偏压部分的边缘终端结构和用于反向偏压部分的边缘终端结构中，设置有多个场限制环（FLR）和多个场板（FP）。形成朝向隔离区域侧延伸到与反向偏置部分的边缘终端结构相邻的多个FP中的最近的第一前向FP。形成朝向偏置部分的边缘终端结构的多个FP中最接近的第一反向FP朝向有源区域侧延伸。第一反向FP在施加正向电压时停止从有源区扩展的耗尽层。第一个前向FP在施加反向电压时停止从隔离区扩展的耗尽层。

3. 发明授权

US08604584B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08604584B2
公开(公告)日：2013-12-10
申请号：US13038349
申请日：2011-03-01
申请人： Hiroki Wakimoto , Kenichi Iguchi , Koh Yoshikawa , Tsunehiro Nakajima , Shunsuke Tanaka , Masaaki Ogino
发明人： Hiroki Wakimoto , Kenichi Iguchi , Koh Yoshikawa , Tsunehiro Nakajima , Shunsuke Tanaka , Masaaki Ogino
IPC分类号： H01L21/78 , H01L21/302
CPC分类号： H01L21/308 , H01L21/302 , H01L21/78 , H01L29/06
摘要： Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.
摘要翻译：本发明的一些实施例涉及能够防止电特性劣化的半导体器件和半导体器件的制造方法。 p型集电极区域设置在n型漂移区域的背面的表面层上。在元件的末端提供了用于获得反向阻挡能力的p +型隔离层。此外，设置从n型漂移区的背面向p +型隔离层延伸的凹部。提供p型区域并且电连接到p +型隔离层。提供p +型隔离层，以便包括具有作为一侧的凹部的底部和侧壁之间的边界的解理面。

4. 发明授权

US08278682B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08278682B2
公开(公告)日：2012-10-02
申请号：US13116650
申请日：2011-05-26
申请人： Koh Yoshikawa , Kenichi Iguchi
发明人： Koh Yoshikawa , Kenichi Iguchi
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/404
摘要： A semiconductor device that has a reduced size and exhibits a superior blocking voltage capability. A semiconductor device includes an edge termination structure between an active region and an isolation region, the edge termination structure being composed of an edge termination structure for a forward bias section and an edge termination structure for a reverse bias section. A plurality of field limiting rings (FLRs) and a plurality of field plates (FPs) are provided in the edge termination structure for the forward bias section and the edge termination structure for the reverse bias section. A first forward FP that is the nearest of the plurality of FPs to the edge termination structure for the reverse bias section is formed to extend towards the isolation region side. A first reverse FP that is the nearest of the plurality of FPs to the edge termination structure for the forward bias section is formed to extend towards the active region side. The first reverse FP stops the depletion layer expanding from the active region on application of a forward voltage. The first forward FP stops the depletion layer expanding from the isolation region on application of a reverse voltage.
摘要翻译：具有减小的尺寸并且具有优异的阻挡电压能力的半导体器件。半导体器件包括在有源区和隔离区之间的边缘终端结构，边缘终端结构由用于正偏压部分的边缘终端结构和用于反向偏压部分的边缘终端结构组成。在用于正偏压部分的边缘终端结构和用于反向偏压部分的边缘终端结构中，设置有多个场限制环（FLR）和多个场板（FP）。形成朝向隔离区域侧延伸到与反向偏置部分的边缘终端结构相邻的多个FP中的最近的第一前向FP。形成朝向偏置部分的边缘终端结构的多个FP中最接近的第一反向FP朝向有源区域侧延伸。第一反向FP在施加正向电压时停止从有源区扩展的耗尽层。第一个前向FP在施加反向电压时停止从隔离区扩展的耗尽层。

5. 发明授权

US5846593A Food materials containing sesaminol triglucoside derived from sesame seeds 失效
标题翻译：含有芝麻籽的芝麻素三糖苷的食品
公开(公告)号：US5846593A
公开(公告)日：1998-12-08
申请号：US724368
申请日：1996-10-01
申请人： Masato Sugiura , Masanori Inayoshi , Shigeo Sakurai , Kenichi Iguchi , Toshihiko Osawa
发明人： Masato Sugiura , Masanori Inayoshi , Shigeo Sakurai , Kenichi Iguchi , Toshihiko Osawa
IPC分类号： A23L25/00 , C07H17/02 , A23L1/20
CPC分类号： C07H17/02
摘要： A food material containing sesaminol triglucoside by at least 3.0 mm per 1 g of its dry component is obtained by subjecting dehulled sesame seeds to an extraction process at an extraction temperature below 120.degree. C. with aliphatic hydrocarbon as extraction solvent to obtain a solution, removing the solution to obtain a solid which contains the extraction solvent by less than 10 weight %, adding water to this solid to obtain a water-containing object, and removing the residual solvent from this water-containing object by distillation at 20-120.degree. C. The food material thus obtained is substantially free of the solvent used in the extraction process and has improved color, flavor and taste.
摘要翻译：通过使脱脂芝麻在低于120℃的提取温度下进行提取，通过脂肪族烃作为萃取溶剂，得到溶液，除去溶剂，得到含有芝麻素三糖苷的含有芝麻素三糖苷的食品，每1g干成分至少为3.0mm 得到含有小于10重量％的提取溶剂的固体的溶液，向该固体中加入水以获得含水物体，并通过在20-120℃下蒸馏除去该含水物体的残留溶剂由此获得的食品基本上不含提取过程中使用的溶剂，并且具有改善的颜色，风味和味道。

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