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1. 发明专利

JP2008127624A Al-Ni-La SYSTEM Al-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： Al-Ni-La系铝基合金溅射靶及其制造方法
公开(公告)号：JP2008127624A
公开(公告)日：2008-06-05
申请号：JP2006313506
申请日：2006-11-20
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TOKUHIRA MASAYA , TAKAGI KATSUHISA , KUGIMIYA TOSHIHIRO , YONEDA YOICHIRO , GOTO YASUSHI
IPC分类号： C23C14/34 , B22F3/115 , B22F3/15 , B22F3/24 , C22C21/00
CPC分类号： C23C14/3414 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18 , B22F9/082 , B22F2998/10 , C22C21/00 , C23C4/08 , C23C4/123 , H01J37/3426 , H01J37/3429
摘要： PROBLEM TO BE SOLVED: To provide a technique where splashes generated upon film deposition using an Al-Ni-La system Al-based alloy sputtering target comprising Ni and La can be reduced. SOLUTION: The invention relates to an Al-Ni-La system Al-based alloy sputtering target comprising Ni and La, wherein, when a section from (1/4)t to (3/4)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2,000 times, (1) a total area of an Al-Ni system intermetallic compound having an average particle diameter of 0.3 to 3 μm with respect to a total area of the entire Al-Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al-La system intermetallic compound having an average particle diameter of 0.2 to 2 μm with respect to a total area of the entire Al-La system intermetallic compound is 70% or more in terms of an area fraction, the Al-La system intermetallic compound being mainly composed of Al and La. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以减少使用包含Ni和La的Al-Ni-La系Al基合金溅射靶的成膜时产生飞溅的技术。解决方案：本发明涉及包含Ni和La的Al-Ni-La系Al基合金溅射靶，其中当（1/4）t至（3/4）t（t：厚度）以扫描电子显微镜以2000倍的倍率观察垂直于溅射靶的平面的横截面，（1）平均粒径为0.3〜3的Al-Ni系金属间化合物的总面积相对于整个Al-Ni系金属间化合物的总面积的μm以面积分数计为70％以上，Al-Ni系金属间化合物主要由Al和Ni组成; 和（2）相对于整个Al-La系金属间化合物的总面积，平均粒径为0.2〜2μm的Al-La系金属间化合物的总面积为面积的70％以上 Al-La系金属间化合物主要由Al和La组成。版权所有：（C）2008，JPO＆INPIT

2. 发明专利

JP2012000592A Gas atomizer of high-temperature molten metal 审中-公开
标题翻译：高温金属的气体原子
公开(公告)号：JP2012000592A
公开(公告)日：2012-01-05
申请号：JP2010139555
申请日：2010-06-18
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： IMASHIRO TAKANORI , ODA TAKESHI , TOKUHIRA MASAYA
IPC分类号： B05B7/06 , B22D23/00 , B22F3/115
摘要： PROBLEM TO BE SOLVED: To provide a gas atomizer for obtaining a molded body of excellent mechanical properties and high quality with high yield when producing the molded body by spraying and atomizing high-temperature molten metal or the like with high-pressure gas.SOLUTION: The gas atomizer (A) for high-temperature molten metal (S) produces the molded body (5) by spraying and atomizing flowing-down high-temperature molten metal (S) with high-pressure gas. The gas atomizer (A) comprises a high-pressure gas chamber (GR) for surrounding the high-temperature molten metal flow (S), an atomizing nozzle (AN) disposed so as to be communicated with a lower inner side of the high-pressure gas chamber (GR), and a cooling nozzle (CN) disposed so as to be communicated with a lower outer side of the high-pressure gas chamber (GR).
摘要翻译：要解决的问题：提供一种气体雾化器，用于通过用高压气体喷射和雾化高温熔融金属等来制造成型体时获得具有优异的机械性能和高质量的高质量的成型体。解决方案：用于高温熔融金属（S）的气体雾化器（A）通过用高压气体喷射和雾化流下的高温熔融金属（S）来生产成型体（5）。气体雾化器（A）包括用于包围高温熔融金属流（S）的高压气室（GR），设置成与高温熔融金属流（S）的下内侧连通的雾化喷嘴（AN）高压气室（GR）和与高压气室（GR）的下外侧连通的冷却喷嘴（CN）。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010070857A SPUTTERING TARGET OF Al-BASED ALLOY AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：基于Al的合金的溅射靶材及其制造方法
公开(公告)号：JP2010070857A
公开(公告)日：2010-04-02
申请号：JP2009284281
申请日：2009-12-15
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , TOKUHIRA MASAYA , KUGIMIYA TOSHIHIRO , YONEDA YOICHIRO , GOTO YASUSHI
IPC分类号： C23C14/34 , B22F3/115 , B22F3/15 , C22C21/00 , C22F1/00 , C22F1/04 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target of an Al-based Ni-containing alloy which does not cause sputtering failure such as arcing (abnormal discharge), even if the film-forming speed is increased. SOLUTION: The sputtering target of the Al-based Ni-containing alloy includes 0.05 to 10 atom% Ni, and has such crystals showing orientations of , , and in a normal direction with respect to the surface to be sputtered of the sputtering target when measured by a backscatter electron diffraction image method as to satisfy the following requirements (1) to (3): (1) when the total area rate of ±15°, ±15°, ±15° and ±15° is defined as a P value, a ratio of the P value with respect to the whole surface area to be sputtered is 70% or more; (2) an area ratio of ±15° with respect to the P value is 30% or more; and (3) an area ratio of ±15° with respect to the P value is 10% or less. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使成膜速度提高，也可以提供不产生电弧（异常放电）等溅射不良的Al系Ni系合金的溅射靶。解决方案：Al系Ni合金的溅射靶包含0.05〜10原子％的Ni，并且在正常情况下具有取向<001>，<011>，<111>和<311>的晶体（1）〜（3）：（1）当总面积率<001>±15时，通过反向散射电子衍射图像法测量溅射靶溅射表面的方向定义为P值，P值相对于要溅射的整个表面积的比例为70％以上，θ<011>±15°，<111>±15°和<311>±15° ; （2）相对于P值的面积比<011>±15°为30％以上; 和（3）相对于P值的面积比<111>±15°为10％以下。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009263768A SPUTTERING TARGET OF Al-BASED ALLOY AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：基于Al的合金的溅射靶材及其制造方法
公开(公告)号：JP2009263768A
公开(公告)日：2009-11-12
申请号：JP2009053376
申请日：2009-03-06
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , IWASAKI YUKI , TOKUHIRA MASAYA , GOTO YASUSHI , MIKI AYA , OKUNO HIROYUKI , OCHI MOTOTAKA , KISHI TOMOYA
IPC分类号： C22C21/00 , B22F3/15 , B22F3/24 , B22F9/08 , C22C21/12 , C22F1/00 , C22F1/04 , C23C14/34
CPC分类号： C23C14/3414 , C22C21/00 , C22F1/04
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target of Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd)-based alloy, which reduces the occurrence of splash at the initial stage of the use of the sputtering target, thereby prevents a defect from occurring in a wiring film or the like, and can improve the yield or performance of FPD, and to provide a manufacturing method therefor.
SOLUTION: The sputtering target of Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd)-based alloy comprises each of at least one element selected from the group A (Ni and Co), at least one element selected from the group B (Cu and Ge), and at least one element selected from the group C (La, Gd and Nd); and has Vickers hardness (HV) controlled to 35 or more.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）基合金的溅射靶，其在初始阶段减少了飞溅的发生使用溅射靶，从而防止在布线膜等中发生缺陷，并且可以提高FPD的产量或性能，并提供其制造方法。解决方案：Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）基合金的溅射靶包含选自A组（Ni和Co）中的至少一种元素，，选自B族（Cu和Ge）中的至少一种元素和选自C（La，Gd和Nd）中的至少一种元素; 维氏硬度（HV）控制在35以上。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009046762A Al-Ni-La-Si-BASED AL ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：基于Al-Ni-La-Si的AL合金溅射靶和其生产方法
公开(公告)号：JP2009046762A
公开(公告)日：2009-03-05
申请号：JP2008179299
申请日：2008-07-09
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , IWASAKI YUKI , TOKUHIRA MASAYA , NANBU AKIRA , OCHI MOTOTAKA , GOTO YASUSHI , KAWAKAMI NOBUYUKI
IPC分类号： C23C14/34 , B22F3/115 , B22F3/17 , B22F3/18 , C22C21/00 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： PROBLEM TO BE SOLVED: To provide a technology that can reduce splashes produced when an Al-Ni-La-Si system Al-based alloy sputtering target containing Ni, La and Si is used to deposit a film. SOLUTION: The present invention relates to an Al-Ni-La-Si-based AL alloy sputtering target including Ni, La and Si, in which, when a section from (1/4)t to (3/4)t (t: thickness) in a cross section vertical to the plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2,000 times, (1) the total area of an Al-Ni-based intermetallic compound having an average particle diameter of 0.3 to 3 μm with respect to the total area of the entire Al-Ni-based intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni-based intermetallic compound being mainly composed of Al and Ni; and (2) the total area of an Al-Ni-La-Si-based intermetallic compound having an average particle diameter of 0.2 to 2 μm with respect to the total area of the entire Al-Ni-La-Si-based intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni-La-Si-based intermetallic compound being mainly composed of Al, Ni, La, and Si. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够减少含有Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶沉积膜时产生飞溅的技术。解决方案：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系AL合金溅射靶，其中当从（1/4）t至（3/4）用扫描型电子显微镜观察放大2000倍的垂直于溅射靶的平面的截面中的t（t：厚度），（1）具有平均值的Al-Ni系金属间化合物的总面积 Al-Ni类金属间化合物的总面积相对于Al-Ni系金属间化合物的总面积为0.3〜3μm的面积分率为70％以上，Al-Ni类金属间化合物主要由Al，Ni构成 ; 和（2）相对于整个Al-Ni-La-Si系金属间化合物的总面积，平均粒径为0.2〜2μm的Al-Ni-La-Si系金属间化合物的总面积以Al，Ni，La，Si为主要成分的Al-Ni-La-Si系金属间化合物的面积率为70％以上。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2012006037A Spray-forming deposition method 审中-公开
标题翻译：喷涂成型沉积法
公开(公告)号：JP2012006037A
公开(公告)日：2012-01-12
申请号：JP2010143591
申请日：2010-06-24
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： IMASHIRO TAKANORI , ODA TAKESHI , TOKUHIRA MASAYA
IPC分类号： B22D23/00 , B22F3/115
摘要： PROBLEM TO BE SOLVED: To provide a spray-forming deposition method for forming a preform, which prevents the occurrence of vacancy portions resulting from temperature variation of the preform or crack due to thermal stress and can achieve yield improvement.SOLUTION: The spray-forming deposition method is used for forming a preform 8 by depositing, on a moving collector 5, the metallic droplets 7 sprayed by jetting a gas to a flow-down molten metal M. A heater 6 is disposed inside or in the vicinity of the collector 5, and the metallic droplets 7 are sequentially deposited on the collector 5 while preheating the collector 5 by the heater 6.
摘要翻译：要解决的问题：提供一种用于形成预成型体的喷射形成沉积方法，其防止由于预应力的温度变化引起的空位部分的发生或由于热应力引起的裂纹，并且可以实现产量提高。解决方案：喷雾形成沉积方法用于通过在移动收集器5上沉积通过向下降的熔融金属M喷射气体而喷射的金属液滴7来形成预成型体8.设置加热器6 在收集器5的内部或附近，并且金属液滴7在通过加热器6预热集电体5的同时依次沉积在收集器5上。（C）2012，JPO＆INPIT

7. 发明专利

JP2009242909A Al-Ni-La-Cu-BASED Al ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF 有权
标题翻译：基于Al-Ni-La-Cu的Al合金溅射靶材及其制造方法
公开(公告)号：JP2009242909A
公开(公告)日：2009-10-22
申请号：JP2008093071
申请日：2008-03-31
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , TOKUHIRA MASAYA , IWASAKI YUKI , GOTO YASUSHI
IPC分类号： C23C14/34 , B22F3/115 , C22C21/00 , C22F1/00 , C22F1/04 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of decreasing a generation of splashing upon depositing by using an Al-Ni-La-Cu-based Al alloy sputtering target containing Ni, La, and Cu. SOLUTION: The Al-Ni-La-Cu-based Al alloy sputtering target contains Ni, La and Cu, in which (1) a total area of an Al-Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3-3 μm is 70% or more by area ratio based on an entire area of the Al-Ni intermetallic compound, and (2) a total area of an Al-La-Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2-2 μm is 70% or more by area ratio based on an entire area of the Al-La-Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4t (t: thickness) to 3/4t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2,000. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过使用含有Ni，La和Cu的Al-Ni-La-Cu系Al合金溅射靶，沉积时减少溅射产生的技术。解决方案：Al-Ni-La-Cu系Al合金溅射靶包含Ni，La和Cu，其中（1）主要包含Al和Ni并且具有平均值的Al-Ni金属间化合物的总面积基于Al-Ni金属间化合物的整个面积，0.3-3μm的粒径为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积，以及在Al-La-Cu金属间化合物的整个面积上，Cu的平均粒径为0.2〜2μm的面积比为70％以上，在将溅射靶的一部分观察到的范围内通过使用扫描电子显微镜以2000倍的垂直于溅射靶的平面的横截面为1 / 4t（t：厚度）至3 / 4t。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2008127623A SPUTTERING TARGET OF Al-BASED ALLOY AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：基于Al的合金的溅射靶材及其制造方法
公开(公告)号：JP2008127623A
公开(公告)日：2008-06-05
申请号：JP2006313505
申请日：2006-11-20
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , TOKUHIRA MASAYA , KUGIMIYA TOSHIHIRO , YONEDA YOICHIRO , GOTO YASUSHI
IPC分类号： C23C14/34 , C22C21/00 , C22F1/00 , C22F1/04
CPC分类号： C23C14/3414 , C22C21/00 , Y10T428/12229
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target of an Al-based Ni-containing alloy which does not cause sputtering failure such as arcing (overdischarge), even if the film-forming speed is increased. SOLUTION: The sputtering target of the Al-based Ni-containing alloy includes 0.05 to 10 atom% Ni, and has such crystals showing orientations of , , and in a normal direction with respect to the surface to be sputtered of the sputtering target when measured by a backscatter electron diffraction image method as to satisfy the following requirements (1) to (3): (1) when the total area rate of ±15°, ±15°, ±15° and ±15° is defined as a P value, a ratio of the P value with respect to the whole surface area to be sputtered is 70% or more; (2) an area ratio of ±15° with respect to the P value is 30% or more; and (3) an area rate of ±15° with respect to the P value is 10% or less. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使成膜速度提高，也可以提供不产生诸如电弧（过放电）等溅射破坏的Al系Ni系合金的溅射靶。解决方案：Al系Ni合金的溅射靶包含0.05〜10原子％的Ni，并且在正常情况下具有取向<001>，<011>，<111>和<311>的晶体（1）〜（3）：（1）当总面积率<001>±15时，通过反向散射电子衍射图像法测量溅射靶溅射表面的方向定义为P值，P值相对于要溅射的整个表面积的比例为70％以上，θ<011>±15°，<111>±15°和<311>±15° ; （2）相对于P值的面积比<011>±15°为30％以上; 和（3）相对于P值的面积率<111>±15°为10％以下。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008057025A Atomization apparatus 审中-公开
标题翻译：原型设备
公开(公告)号：JP2008057025A
公开(公告)日：2008-03-13
申请号：JP2006238850
申请日：2006-09-04
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： ODA TAKESHI , TOKUHIRA MASAYA , KAMEYAMA KAZUHIRO
IPC分类号： B22F9/08
摘要： PROBLEM TO BE SOLVED: To provide an atomization apparatus where, when a columnar preform is produced, the upper face can be formed so as to be flat to the outer circumferential edge part.
SOLUTION: The atomization apparatus has a cam mechanism for oscillating the apparatus, and a cam used for the cam mechanism is composed so as to be a cam shape satisfying inequality in the figure.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2009293108A METHOD FOR PRODUCING Al-BASED ALLOY SPUTTERING TARGET MATERIAL 有权
标题翻译：生产铝基合金溅射靶材的方法
公开(公告)号：JP2009293108A
公开(公告)日：2009-12-17
申请号：JP2008150527
申请日：2008-06-09
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TOKUHIRA MASAYA , MATSUZAKI HITOSHI , TAUCHI HIRONORI , TAKAGI KATSUHISA , IWASAKI YUKI , NAKAI JUNICHI
IPC分类号： C23C14/34 , B22F1/00 , B22F3/15 , B22F9/08 , C22C1/04 , C22C21/00
CPC分类号： C22C1/0416 , B22F2998/10 , C23C14/3414 , B22F9/082 , B22F1/0003
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an Al-based alloy sputtering target material comprising a rare earth element and a high melting point element having a melting point higher than that of Al at a high yield. SOLUTION: The method includes: a stage where a first powder of an Al-based alloy comprising a rare earth element produced by an atomizing process is prepared; a stage where the first powder and one or more of a second powder composed of a high melting point element X having a melting point higher than that of Al are mixed; and a stage where a powdery mixture of the first powder and the second powder is made dense. In the mixing stage, the maximum particle diameter (a) of the first powder is 10 to 200 μm, the maximum particle diameter (b) of the second powder is 10 to 150 μm and the ratio between the (a) and (b), ((a)/(b)) is 0.5 to 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种含有稀土元素和熔点高于Al的高熔点元素的Al系合金溅射靶材的制造方法。解决方案：该方法包括：制备包含通过雾化工艺制备的稀土元素的Al基合金的第一粉末的阶段; 混合第一粉末和由熔点高于Al的高熔点元素X组成的第二粉末中的一种或多种的阶段; 并且使第一粉末和第二粉末的粉末状混合物致密的阶段。在混合阶段，第一粉末的最大粒径（a）为10〜200μm，第二粉末的最大粒径（b）为10〜150μm，（a）和（b），（（a）/（b））为0.5〜5.版权所有（C）2010，JPO＆INPIT

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