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1. 发明专利

JP2009263768A SPUTTERING TARGET OF Al-BASED ALLOY AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：基于Al的合金的溅射靶材及其制造方法
公开(公告)号：JP2009263768A
公开(公告)日：2009-11-12
申请号：JP2009053376
申请日：2009-03-06
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , IWASAKI YUKI , TOKUHIRA MASAYA , GOTO YASUSHI , MIKI AYA , OKUNO HIROYUKI , OCHI MOTOTAKA , KISHI TOMOYA
IPC分类号： C22C21/00 , B22F3/15 , B22F3/24 , B22F9/08 , C22C21/12 , C22F1/00 , C22F1/04 , C23C14/34
CPC分类号： C23C14/3414 , C22C21/00 , C22F1/04
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target of Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd)-based alloy, which reduces the occurrence of splash at the initial stage of the use of the sputtering target, thereby prevents a defect from occurring in a wiring film or the like, and can improve the yield or performance of FPD, and to provide a manufacturing method therefor.
SOLUTION: The sputtering target of Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd)-based alloy comprises each of at least one element selected from the group A (Ni and Co), at least one element selected from the group B (Cu and Ge), and at least one element selected from the group C (La, Gd and Nd); and has Vickers hardness (HV) controlled to 35 or more.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）基合金的溅射靶，其在初始阶段减少了飞溅的发生使用溅射靶，从而防止在布线膜等中发生缺陷，并且可以提高FPD的产量或性能，并提供其制造方法。解决方案：Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）基合金的溅射靶包含选自A组（Ni和Co）中的至少一种元素，，选自B族（Cu和Ge）中的至少一种元素和选自C（La，Gd和Nd）中的至少一种元素; 维氏硬度（HV）控制在35以上。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2014013917A Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：JP2014013917A
公开(公告)日：2014-01-23
申请号：JP2013169246
申请日：2013-08-16
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： GOTO YASUSHI , MIKI AYA , KISHI TOMOYA , HIROSE KENTA , MORITA SHINYA , KUGIMIYA TOSHIHIRO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78693 , C23C14/08 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/24 , H01L29/78606 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor having an oxide semiconductor layer which has good mobility, excellent stress resistance and good wet etching property.SOLUTION: The thin film transistor includes in the following order, a gate electrode, a gate insulation film, an oxide semiconductor layer, source-drain electrodes, an etch stopper layer and a protection film for protecting the source-drain electrodes. The oxide semiconductor layer is a laminate including a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulation film and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the protection film. In the first oxide semiconductor layer, contents of respective metal elements to all of the metal elements except oxygen are In: 25% or less (not including 0%), Ga: not less than 8.0% and not more than 30%, Zn: 30.0-65% and Sn: 5-30%.
摘要翻译：要解决的问题：提供一种薄膜晶体管，其具有移动性好，耐应力优异和良好的湿蚀刻性能的氧化物半导体层。解决方案：薄膜晶体管按以下顺序包括栅电极，栅极绝缘膜，氧化物半导体层，源 - 漏电极，蚀刻停止层和用于保护源 - 漏电极的保护膜。氧化物半导体层是包括第一氧化物半导体层（IGZTO）和第二氧化物半导体层（IZTO）的层叠体。第二氧化物半导体层形成在栅极绝缘膜上，第一氧化物半导体层形成在第二氧化物半导体层和保护膜之间。在第一氧化物半导体层中，除氧以外的各金属元素的含量为In：25％以下（不含0％），Ga：8.0％以上30％以下Zn： 30.0-65％，Sn：5-30％。

3. 发明专利

JP2012243740A Wiring structure including organic el display reflective anode electrode 审中-公开
标题翻译：有线结构包括有机EL显示反射阳极电极
公开(公告)号：JP2012243740A
公开(公告)日：2012-12-10
申请号：JP2011116304
申请日：2011-05-24
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OKUNO HIROYUKI , MIKI AYA , KUGIMIYA TOSHIHIRO
IPC分类号： H05B33/26 , C22C21/00 , H01L51/50 , H05B33/02 , H05B33/06 , H05B33/08
摘要： PROBLEM TO BE SOLVED: To provide a wiring structure having an organic EL display reflective anode electrode equipped with an Al alloy reflective film which is excellent especially in durability against stress in a longitudinal direction, and can acquire stable emission characteristics without unevenness in emission intensity though the Al reflective film is directly connected to an organic layer, and can achieve high yield.SOLUTION: A wiring structure comprises an organic layer including an Al alloy film 6 composing an organic EL display reflective anode electrode, and a light-emitting layer 8 on a substrate 1. The Al alloy film 6 contains a rare earth element of 0.05-5 atom% and has a hardness of 2-3.5 GPa. A density of a grain boundary triple point existing in an Al alloy structure is equal to or greater than 2×10points/mm. The organic layer including the light-emitting layer 8 is directly connected on the Al alloy film 6.
摘要翻译：要解决的问题：为了提供一种布线结构，其具有配备有Al合金反射膜的有机EL显示反射型阳极电极，该Al合金反射膜特别是在长度方向上的应力耐久性方面优异，并且可以获得稳定的发光特性而不产生不均匀通过Al反射膜的发射强度直接连接到有机层，并且可以实现高产率。解决方案：布线结构包括有机层，包括构成有机EL显示反射型阳极电极的Al合金膜6和在基板1上的发光层8.Al合金膜6含有稀土元素 0.05-5原子％，硬度为2-3.5GPa。存在于Al合金结构中的晶界三重点的密度等于或大于2×10点/ mm 2 。包含发光层8的有机层直接连接在Al合金膜6上。（C）2013，JPO＆INPIT

4. 发明专利

JP2012189725A WIRING FILM AND ELECTRODE USING Ti ALLOY BARRIER METAL AND Ti ALLOY SPUTTERING TARGET 审中-公开
标题翻译：使用钛合金阻挡金属和钛合金溅射目标的导线和电极
公开(公告)号：JP2012189725A
公开(公告)日：2012-10-04
申请号：JP2011052245
申请日：2011-03-09
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： MIKI AYA , OKUNO HIROYUKI , KUGIMIYA TOSHIHIRO
IPC分类号： G02F1/1343 , C22C14/00 , G06F3/041 , H01B5/02 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L51/50 , H05B33/14 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide a novel wiring film having a characteristic of excellent wet etching processability.SOLUTION: A wiring film to be used in a display device or a touch panel sensor, comprises a layered structure of two or more layers including a Ti alloy layer containing 3 to 50 atm.% of an element of a group X (where, the group X is composed of at least one element selected from the group consisting of a rare earth element, Ge, Si, Sn, Hf, Zr, Mg, Ca, Sr, Al, Zn, Mn, Co, Fe and Ni) and/or 0.2 to 3.0 mass% of oxygen as an alloy component, and a balance of Ti and inevitable impurities; and a layer of pure Cu or a Cu alloy.
摘要翻译：要解决的问题：提供具有优异的湿蚀刻加工性能的新型布线膜。解决方案：在显示装置或触摸面板传感器中使用的布线膜包括两层或多层的层状结构，其包括含有3至50atm％的X族元素的Ti合金层（其中，基团X由选自稀土元素，Ge，Si，Sn，Hf，Zr，Mg，Ca，Sr，Al，Zn，Mn，Co，Fe和Ni中的至少一种元素组成）和/或0.2〜3.0质量％的氧作为合金成分，余量为Ti和不可避免的杂质; 和一层纯Cu或Cu合金。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012188691A Ti-ALLOY WIRING FILM AND ELECTRODE, AND Ti-ALLOY SPUTTERING TARGET 审中-公开
标题翻译：钛合金线和电极以及钛合金溅射靶
公开(公告)号：JP2012188691A
公开(公告)日：2012-10-04
申请号：JP2011052244
申请日：2011-03-09
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： MIKI AYA , OKUNO HIROYUKI , KUGIMIYA TOSHIHIRO
IPC分类号： C22C14/00 , C22C13/00 , C22C16/00 , C22C18/00 , C22C19/03 , C22C19/07 , C22C22/00 , C22C27/00 , C22C28/00 , C22C38/00 , C23C14/14 , C23C14/34 , H01B1/02 , H01B5/02
摘要： PROBLEM TO BE SOLVED: To provide a novel metal wiring film having characteristics excellent in wet etching property.SOLUTION: The wiring film to be used as a wiring Ti-alloy film for a display or touch panel sensor includes 3-50 atom% of an X-group element (X is at least one element selected from the group consisting of rare earth elements, Ge, Si, Sn, Hf, Zr, Mg, Ca, Sr, Al, Zn, Mn, Co, Fe and Ni) as alloy component and/or 0.2-3.0 mass% of oxygen, with the balance being Ti and unavoidable impurities.
摘要翻译：要解决的问题：提供具有湿蚀刻性能优异的特征的新型金属布线膜。用作显示器或触摸面板传感器的配线用Ti合金膜的布线膜包括3-50原子％的X族元素（X是选自由以下组成的组中的至少一种元素：稀土元素，Ge，Si，Sn，Hf，Zr，Mg，Ca，Sr，Al，Zn，Mn，Co，Fe和Ni）作为合金成分和/或0.2-3.0质量％的氧， Ti和不可避免的杂质。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2009282504A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2009282504A
公开(公告)日：2009-12-03
申请号：JP2009088127
申请日：2009-03-31
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： GOTO YASUSHI , NAKAI JUNICHI , OKUNO HIROYUKI , NANBU AKIRA , MIKI AYA
IPC分类号： G02F1/1368 , C22C21/00 , C22F1/00 , C22F1/04 , G09F9/30 , H01L21/3205 , H01L23/52 , H01L29/417 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a display device comprising an aluminum alloy film which can achieve direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously achieve low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process, in a wiring structure of a thin-film transistor substrate for use in display devices.
SOLUTION: In the display device, a prescribed element is added to an Al matrix for achieving direct contact with the aluminum alloy thin film and the transparent electrode and an element forming and depositing an intermetallic compound between the element and Ni, Ag, Zn and Co in aluminum is added for achieving stable contact with the transparent electrode even in a low temperature process of 300°C or lower and for improving corrosion resistance. The intermetallic compound which has a maximum diameter of ≤150 nm is formed in the Al alloy film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种包括可以实现铝合金薄膜和透明像素电极之间的直接接触的铝合金膜的显示装置，可以同时实现低电阻和耐热性，并且可以提高在用于显示装置的薄膜晶体管基板的布线结构中，通过在薄膜晶体管制造工艺中使用的胺类剥离液和碱性显影液的耐腐蚀性。解决方案：在显示装置中，向铝基体添加规定的元素，以实现与铝合金薄膜和透明电极的直接接触以及在元件与Ni，Ag之间形成和沉积金属间化合物的元件，为了与透明电极保持稳定的接触，添加了铝和铝，并且在300℃以下的低温工序中也能够提高耐蚀性。在Al合金膜中形成最大直径为≤150nm的金属间化合物。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009124136A DISPLAY DEVICE AND Cu ALLOY FILM FOR USE IN SAME 有权
标题翻译：显示器件和铜合金膜用于其中
公开(公告)号：JP2009124136A
公开(公告)日：2009-06-04
申请号：JP2008274457
申请日：2008-10-24
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： ONISHI TAKASHI , FUKU KATSUFUMI , GOTO YASUSHI , MIKI AYA , MIZUNO MASAO , ITO HIROTAKA
IPC分类号： H01L21/3205 , G02F1/1343 , G09F9/30 , H01L21/285 , H01L23/52 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a Cu alloy film for a display device that has a lower electric resistivity than a conventional Cu alloy film, can realize direct connection of low contact resistance to transparent conductive films without forming any barrier metal, and, when applied to a liquid crystal display or the like, can provide a high display quality. SOLUTION: The Cu alloy film for a display device comprising films 25, 26, 34 is directly connected to transparent conductive films 5, 41 on the substrate, and contains 0.1 to 0.5 atom% of Ge and 0.1 to 0.5 atom% in total of one kind or more selected from a group comprising Ni, Zn, Fe and Co. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有比常规Cu合金膜低的电阻率的显示装置用Cu合金膜，可以实现直接连接低接触电阻而不形成任何阻挡金属的透明导电膜，以及当应用于液晶显示器等时，可以提供高显示质量。解决方案：用于包括膜25,26,34的显示装置的Cu合金膜直接连接到基板上的透明导电膜5,41，并且含有0.1至0.5原子％的Ge和0.1至0.5原子％的总共选自Ni，Zn，Fe和Co组中的一种或多种。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2014225626A 薄膜トランジスタおよび表示装置审中-公开
标题翻译：薄膜晶体管和显示器
公开(公告)号：JP2014225626A
公开(公告)日：2014-12-04
申请号：JP2013178502
申请日：2013-08-29
申请人：株式会社神戸製鋼所 , Kobe Steel Ltd
发明人： MIKI AYA , MORITA SHINYA , GOTO YASUSHI , KUGIMIYA TOSHIHIRO , TAO HIROAKI , HIROSE KENTA
IPC分类号： H01L29/786 , H01L21/28 , H01L21/283 , H01L21/316
CPC分类号： H01L29/7869 , H01L21/823462
摘要：【課題】酸化物半導体層薄膜を備えた薄膜トランジスタにおいて、光やバイアスストレスなどに対してしきい値電圧の変化量が小さくストレス耐性に優れた薄膜トランジスタを提供する。【解決手段】本発明の薄膜トランジスタは、ゲート電極と、チャネル層に用いられる酸化物半導体層と、ゲート電極とチャネル層との間に配置されるゲート絶縁膜とを備えた薄膜トランジスタであって、酸化物半導体層を構成する金属元素は、In、Ga、Zn、およびSnよりなる群から選択される少なくとも一種である(但し、前記酸化物半導体層を構成する金属元素が、Snと、Inおよび/またはZnで構成されるものは除く。)と共に、前記酸化物半導体層と直接接触するゲート絶縁膜中の水素濃度は4原子%以下に制御されたものである。【選択図】なし
摘要翻译：要解决的问题：为了提供具有氧化物半导体薄膜的薄膜晶体管，其导致响应于光，偏压应力等的阈值电压的较小变化，因此具有良好的耐应力。解决方案：薄膜晶体管包括：栅电极; 用于沟道层的氧化物半导体层; 以及布置在栅电极和沟道层之间的栅极绝缘膜。构成氧化物半导体层的金属元素是选自由In，Ga，Zn和Sn组成的组中的至少一种（除了由Sn，In和/或Zn构成的构成氧化物半导体层的金属元素）和氢浓度在与氧化物半导体层直接接触的栅极绝缘膜中设定为等于或小于4at％。

9. 发明专利

JP2014158004A Method for evaluating oxide semiconductor thin film, and method for quality control of oxide semiconductor thin film 有权
标题翻译：用于评价氧化物半导体薄膜的方法，以及氧化物半导体薄膜的质量控制方法
公开(公告)号：JP2014158004A
公开(公告)日：2014-08-28
申请号：JP2013055795
申请日：2013-03-18
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： HAYASHI KAZUSHI , KISHI TOMOYA , MIKI AYA , KUGIMIYA TOSHIHIRO
IPC分类号： H01L21/66 , H01L21/336 , H01L29/786
CPC分类号： G01N21/6489 , H01L22/12 , H01L29/24 , H01L29/66969 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide a method for simply evaluating (projecting/estimating) the stress resistance of an oxide semiconductor thin film in a non-destructive and non-contact manner.SOLUTION: A sample on which an oxide semiconductor thin film is formed is irradiated with excitation light or an electron beam, and the stress resistance of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity of excited luminescent light. The occurrence state or the like of a defect level or the like generated in an oxide thin film can be confirmed by observing the fluorescence intensity generated between other energy levels with a fluorescence intensity Icorresponding to a band gap as a reference, and the quality of the oxide thin film can be controlled by monitoring the value of the fluorescence intensity.
摘要翻译：要解决的问题：提供以非破坏性和非接触方式简单地评价（投影/估计）氧化物半导体薄膜的应力阻力的方法。解决方案：形成氧化物半导体薄膜的样品用激发光或电子束照射，并且基于激发的发光的发光强度来评价氧化物半导体薄膜的应力电阻。在氧化物薄膜中产生的缺陷水平等的发生状态等可以通过观察其他能级之间产生的荧光强度与荧光强度Ic对应于带隙作为参考来确认，以及质量通过监测荧光强度的值可以控制氧化物薄膜。

10. 发明专利

JP2013070052A Oxide semiconductor, thin film transistor including the same, and thin film transistor display panel 有权
标题翻译：氧化物半导体，包括其的薄膜晶体管和薄膜晶体管显示面板
公开(公告)号：JP2013070052A
公开(公告)日：2013-04-18
申请号：JP2012201961
申请日：2012-09-13
申请人： Samsung Display Co Ltd , 三星ディスプレイ株式會社Samsung Display Co.,Ltd. , Kobe Steel Ltd , 株式会社神戸製鋼所 , Jin-Seong Park , 鎭成朴
发明人： AHN BYUNG-DU , LEE SEIKUN , PARK SHIH YONG , PARK JUN HYUN , KIM KEON-HEE , LIN JI HOON , PARK JAE-WOO , PARK JIN-SEONG , KUGIMIYA TOSHIHIRO , MIKI AYA , MORITA SHINYA , KISHI TOMOYA , TAO HIROAKI
IPC分类号： H01L29/786 , H01L29/24
CPC分类号： H01L29/7869 , H01L21/02565 , H01L27/1225 , H01L29/66969
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor, a thin film transistor including the same, and a thin film transistor display panel which have excellent characteristics by the use of materials added to a mother material of the oxide semiconductor on the basis of rationale.SOLUTION: An oxide semiconductor includes a first material including zinc (Zn) and/or tin (Sn), and a second material added to the first material. A value obtained by subtracting the electronegativity difference between the second material and oxygen (O) from the electronegativity difference between the first material and oxygen (O) is 1.3 or less.

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