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1. 发明专利

JP2014120487A Electrode for use in display device or input device, and sputtering target for electrode formation 审中-公开
标题翻译：用于显示设备或输入设备的电极，以及用于电极形成的溅射靶
公开(公告)号：JP2014120487A
公开(公告)日：2014-06-30
申请号：JP2012271803
申请日：2012-12-12
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研 , Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OKUNO HIROYUKI , NAKAI JUNICHI , GOTO YASUSHI , TAUCHI HIRONORI , IWANARI YUMI , SHIDA YOKO
IPC分类号： H01L21/28 , C23C14/34 , G02F1/1343 , G02F1/1368 , G09F9/30 , H01L21/285 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/14 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide an electrode for use in a display device or an input device having characteristics of excellent wiring resistance and reflectance, while having excellent adhesion.SOLUTION: An electrode for use in a display device or an input device consists of a lamination film including a first layer composed of an Al alloy formed on the substrate side, a second layer formed thereabove and composed of (a) at least one kind selected from a group consisting of Mo, a Mo alloy, Ti, a Ti alloy, Ta, W, and Nb, and/or (b) an In oxide and/or a conductive oxide including a Zn oxide, and a third layer formed above the second layer and composed of an Ag alloy. The electrode has a thickness of 100-800 nm, the second layer has a thickness of 3-50 nm, the third layer has a thickness of 60-480 nm, and the thickness ratio of the third layer occupying the thickness of the electrode is 10-70%.
摘要翻译：要解决的问题：提供一种用于具有优异的布线电阻和反射率特性的显示装置或输入装置，同时具有优异的粘附性。解决方案：用于显示装置或输入装置的电极包括层叠膜包括由在基板侧形成的Al合金构成的第一层，在其上形成的第二层，由（a）选自Mo，Mo合金，Ti，Ti合金， Ta，W和Nb，和/或（b）包含Zn氧化物的In氧化物和/或导电氧化物，以及形成在第二层上方并由Ag合金构成的第三层。该电极的厚度为100〜800nm，第二层的厚度为3-50nm，第三层的厚度为60〜480nm，第三层占电极厚度的厚度比为 10-70％。

2. 发明专利

JP2014103312A Electrode for use in display device or input device, and sputtering gate for forming electrode 审中-公开
标题翻译：用于显示设备或输入设备的电极，以及用于形成电极的溅射门
公开(公告)号：JP2014103312A
公开(公告)日：2014-06-05
申请号：JP2012255360
申请日：2012-11-21
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研 , Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OKUNO HIROYUKI , NAKAI JUNICHI , GOTO YASUSHI , TAUCHI HIRONORI , SHIDA YOKO , IWANARI YUMI
IPC分类号： H01L21/3205 , C22C5/06 , C22C5/08 , C22C21/00 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/768 , H01L23/532 , H01L29/786 , H01L51/50 , H05B33/10 , H05B33/14 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide an electrode structure having excellent electrical resistivity, high reflectivity comparable to an Ag alloy film (single layer), and facilitating high accuracy microfabrication.SOLUTION: An electrode for use in a display device or an input device has a laminated film including a first layer composed of an Al alloy and formed on the substrate side, and a second layer formed thereon and composed of an Ag alloy. The electrode has a thickness of 100-800 nm, the second layer has a thickness of 60-480 nm, the thickness ratio of the second layer occupying the thickness of the electrode is 10-70%, and the thickness ratio of the first layer occupying the thickness of the electrode is 30% or more. The Al alloy contains, as an alloy element, a predetermined amount of at least one kind selected from a group consisting of: rare earth element; at least one kind selected from a group consisting of Si, Cu, and Ge; and at least one kind selected from a group consisting of Ti, Ta, W and Nb.
摘要翻译：要解决的问题：提供具有优异的电阻率，与Ag合金膜（单层）相当的高反射率的电极结构，并且促进高精度微细加工。解决方案：用于显示装置或输入装置的电极具有层压膜，其包括由Al合金构成的第一层，并且形成在基板侧，以及由Ag合金构成的第二层。电极的厚度为100〜800nm，第二层的厚度为60〜480nm，第二层占电极厚度的厚度比为10-70％，第一层的厚度比占用电极的厚度为30％以上。 Al合金作为合金元素含有预定量的选自由稀土元素组成的组中的至少一种; 选自由Si，Cu和Ge组成的组中的至少一种; 和选自由Ti，Ta，W和Nb组成的组中的至少一种。

3. 发明专利

JP2009293108A METHOD FOR PRODUCING Al-BASED ALLOY SPUTTERING TARGET MATERIAL 有权
标题翻译：生产铝基合金溅射靶材的方法
公开(公告)号：JP2009293108A
公开(公告)日：2009-12-17
申请号：JP2008150527
申请日：2008-06-09
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TOKUHIRA MASAYA , MATSUZAKI HITOSHI , TAUCHI HIRONORI , TAKAGI KATSUHISA , IWASAKI YUKI , NAKAI JUNICHI
IPC分类号： C23C14/34 , B22F1/00 , B22F3/15 , B22F9/08 , C22C1/04 , C22C21/00
CPC分类号： C22C1/0416 , B22F2998/10 , C23C14/3414 , B22F9/082 , B22F1/0003
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an Al-based alloy sputtering target material comprising a rare earth element and a high melting point element having a melting point higher than that of Al at a high yield. SOLUTION: The method includes: a stage where a first powder of an Al-based alloy comprising a rare earth element produced by an atomizing process is prepared; a stage where the first powder and one or more of a second powder composed of a high melting point element X having a melting point higher than that of Al are mixed; and a stage where a powdery mixture of the first powder and the second powder is made dense. In the mixing stage, the maximum particle diameter (a) of the first powder is 10 to 200 μm, the maximum particle diameter (b) of the second powder is 10 to 150 μm and the ratio between the (a) and (b), ((a)/(b)) is 0.5 to 5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种含有稀土元素和熔点高于Al的高熔点元素的Al系合金溅射靶材的制造方法。解决方案：该方法包括：制备包含通过雾化工艺制备的稀土元素的Al基合金的第一粉末的阶段; 混合第一粉末和由熔点高于Al的高熔点元素X组成的第二粉末中的一种或多种的阶段; 并且使第一粉末和第二粉末的粉末状混合物致密的阶段。在混合阶段，第一粉末的最大粒径（a）为10〜200μm，第二粉末的最大粒径（b）为10〜150μm，（a）和（b），（（a）/（b））为0.5〜5.版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2012224942A Al-BASED ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：基于Al的合金喷射目标及其生产方法
公开(公告)号：JP2012224942A
公开(公告)日：2012-11-15
申请号：JP2011221005
申请日：2011-10-05
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： MATSUMOTO KATSUSHI , TAKAGI KATSUHISA , TAKETOMI YUICHI , NAKAI JUNICHI , MAKINO HIDETADA , TAKAGI TOSHIAKI
IPC分类号： C23C14/34 , B21B3/00 , B22D23/00 , B22F3/15 , C22C1/02 , C22C21/00
CPC分类号： C23C14/3414 , B22F3/115 , B22F3/15 , B22F3/24 , C22C1/0416 , C22C21/00 , C22F1/04 , C23C16/45504 , C23C16/4585 , C23C16/4586
摘要： PROBLEM TO BE SOLVED: To provide an Al-based alloy sputtering target capable of increasing a deposition rate (sputter rate) when a sputtering target is used, and preferably capable of preventing the occurrence of splashes.SOLUTION: The Al-based alloy sputtering target includes Ta. In the Al-based alloy sputtering target, an Al-Ta-based intermetallic compound including Al and Ta preferably has a mean particle diameter of 0.005 μm or more and 1.0 μm or less, and a mean inter-particle distance of 0.01 μm or more and 10.0 μm or less.
摘要翻译：要解决的问题：提供能够提高使用溅射靶时的沉积速度（溅射速率）的Al基合金溅射靶，并且优选能够防止飞溅的发生。解决方案：Al基合金溅射靶包括Ta。在Al系合金溅射靶中，Al，Ta的Al-Ta系金属间化合物的平均粒径优选为0.005μm以上且1.0μm以下，平均粒子间距为0.01μm以上 10.0μm以下。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2014120486A Electrode for use in display device or input device, and sputtering target for electrode formation 审中-公开
标题翻译：用于显示设备或输入设备的电极，以及用于电极形成的溅射靶
公开(公告)号：JP2014120486A
公开(公告)日：2014-06-30
申请号：JP2012271802
申请日：2012-12-12
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研 , Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OKUNO HIROYUKI , NAKAI JUNICHI , GOTO YASUSHI , TAUCHI HIRONORI , SHIDA YOKO , IWANARI YUMI
IPC分类号： H01L21/28 , C22C5/06 , C22C21/00 , C23C14/06 , C23C14/14 , C23C14/34 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L29/786 , H01L51/50 , H05B33/10 , H05B33/14 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide an electrode having excellent conductivity (low wiring resistance), facilitating high precision microfabrication, and having a high reflectance comparable to that of an Ag alloy film (single layer).SOLUTION: An electrode for use in a display device or an input device consists of a lamination film including a first layer composed of an Al alloy formed on the substrate side, a second layer composed of an oxide or a nitride of an Al alloy formed thereabove, and a third layer composed of an Ag alloy formed above the second layer. Thickness of the electrode is 100-800 nm, thickness of the second layer is 1-10 nm, thickness of the third layer is 70-480 nm, and the thickness ratio of the third layer occupying the thickness of the electrode is 10-70%.
摘要翻译：要解决的问题：提供具有优异导电性（低布线电阻）的电极，促进高精度微细加工，并且具有与Ag合金膜（单层）相当的高反射率。溶液：用于显示器的电极装置或输入装置由包括由在基板侧形成的Al合金构成的第一层的层压膜，由形成在其上的Al合金的氧化物或氮化物构成的第二层以及由Ag构成的第三层合金形成在第二层之上。电极的厚度为100〜800nm，第二层的厚度为1-10nm，第三层的厚度为70〜480nm，占电极厚度的第三层的厚度比为10-70 ％。

6. 发明专利

JP2008262654A Read only optical information recording medium 有权
标题翻译：只读光信息记录介质
公开(公告)号：JP2008262654A
公开(公告)日：2008-10-30
申请号：JP2007106344
申请日：2007-04-13
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , Sony Disc & Digital Solutions Inc , 株式会社コベルコ科研 , 株式会社ソニー・ディスクアンドデジタルソリューションズ , 株式会社神戸製鋼所
发明人： OKAWA NAOKI , TAUCHI HIRONORI , NAKAI JUNICHI
IPC分类号： G11B7/258 , C23C14/06 , C23C14/14 , C23C14/34 , G11B7/24 , G11B7/26
CPC分类号： C23C14/14 , G11B7/259
摘要： PROBLEM TO BE SOLVED: To provide a read only optical information recording medium equipped with a reflection film having high reflectance, exhibiting not only excellent environment resistance when held under conditions of high temperature and high humidity but also excellent light resistance when held under a condition of irradiation with light of high intensity and having repetitive reproduction durability to a repetitive reproduction test. SOLUTION: The read only optical information recording medium has the reflection film and a light transmission layer which are sequentially layered at least one layer for each on a substrate, wherein the reflection film comprises Ag based alloy containing 0.01 to 1.0 at.% Bi and 0.1 to 13.0 at.% Cu. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种装备有具有高反射率的反射膜的只读光学信息记录介质，当在高温和高湿度条件下保持时不仅表现出优异的耐环境性，而且在保持在低温下具有高强度的光的照射条件和对重复再现测试具有重复的再现耐久性的条件。解决方案：只读光信息记录介质具有反射膜和透光层，它们在基板上分别依次层叠至少一层，其中反射膜包括含有0.01至1.0原子％的Ag基合金， Bi和0.1〜13.0原子％Cu。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2012162768A Al-BASED ALLOY SPUTTERING TARGET AND Cu-BASED ALLOY SPUTTERING TARGET 有权
标题翻译：基于Al的合金溅射靶和铜基合金溅射靶
公开(公告)号：JP2012162768A
公开(公告)日：2012-08-30
申请号：JP2011023224
申请日：2011-02-04
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： MATSUMOTO KATSUSHI , NAKAI JUNICHI , TAKAGI TOSHIAKI
IPC分类号： C23C14/34 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3407 , C22C1/02 , C22C9/00 , C22C21/00 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of improving a film forming speed in pre-sputtering and in the following sputtering to a substrate or the like using an Al-based alloy sputtering target or a Cu-based sputtering target and also suppressing sputtering failure such as a splash.SOLUTION: When the total area rate of crystal orientations ±15°, ±15°, ±15°, ±15° and ±15° in the normal direction of the sputtering face in the depth within 1 mm from the outermost surface of the Al-based alloy or the Cu-based alloy sputtering target is defined as a P value, the sputtering target satisfies the requirement of the following (1) and/or (2), wherein (1) the area rate PA of ±15° with respect to the P value is 40% or less, and (2) the total area rate PB of ±15° and ±15° with respect to the P value is 20% or more.
摘要翻译：要解决的问题：提供一种能够使用Al系合金溅射靶或Cu系溅射靶在提高溅射前和后续溅射中将成膜速度提高到基板等的技术，以及也抑制溅射等溅射故障。
解决方案：当正常的晶体取向的总面积率<001>±15°，<011>±15°，<111>±15°，<112>±15°和<012>±15° 在Al系合金或Cu系合金溅射靶的最外表面1mm以内的溅射面的方向为P值时，溅射靶满足以下（1）和/ 或（2），其中（1）相对于P值的<011>±15°的面积率PA为40％以下，（2）总面积率PB为<001>±15°， 111°±15°相对于P值为20％以上。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2005036291A Ag BASED SPUTTERING TARGET AND ITS PRODUCTION METHOD 有权
标题翻译：基于Ag的溅射目标及其生产方法
公开(公告)号：JP2005036291A
公开(公告)日：2005-02-10
申请号：JP2003275621
申请日：2003-07-16
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , NAKAI JUNICHI , TAUCHI HIRONORI , MATSUZAKI HITOSHI , FUJII HIDEO
IPC分类号： C22F1/14 , C22C5/06 , C22F1/00 , C23C14/34
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an Ag based sputtering target capable of stably and continuously depositing a thin film having excellent uniformity of a film thickness and a componential composition in the film face direction without interruption from the start of its use to the completion.
SOLUTION: In the Ag based sputtering target, cutting is performed at the faces parallel to the sputtering face to expose a plurality of sputtering faces, a plurality of parts are selected for each exposed sputtering face, the following values A and B are calculated on the basis of the crystal grain sizes in all the selected parts, and, provided that the higher one in the values A and B is defined as the three-dimensional variation of the crystal grain sizes, the three-dimensional variation of the crystal grain sizes is ≤18%: value A=(D
max -D
ave )/D
ave ×100(%), and value B=(D
ave -D
min )/D
ave ×100(%)(wherein, D
max denotes the maximum one of the crystal grain sizes in all the selected parts, D
min denotes the minimum one, and D
ave denotes the average value).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种能够稳定且连续地沉积薄膜厚度均匀性和膜面方向上的组成成分的薄膜的Ag系溅射靶，而不会从使用开始到中断地沉积完成。解决方案：在Ag基溅射靶中，在与溅射面平行的面上进行切割以暴露多个溅射面，为每个暴露的溅射面选择多个部分，以下值A和B为基于所有选择的部分中的晶粒尺寸计算，并且如果将值A和B中较高的值定义为晶粒尺寸的三维变化，则晶体的三维变化晶粒尺寸≤18％：值A =（D max -D ave ）/ D ave ×100（％），值B =（D ave -D min ）/ D ave ×100（％）（其中，D max 所有选定部分的最大晶粒尺寸D min 表示最小值，D ave 表示平均值。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004339585A Ag-Bi-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：JP2004339585A
公开(公告)日：2004-12-02
申请号：JP2003139293
申请日：2003-05-16
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , NAKAI JUNICHI , TAUCHI HIRONORI , SATO TOSHIKI , MATSUZAKI HITOSHI , FUJII HIDEO
IPC分类号： C22F1/14 , B32B3/02 , C22C5/00 , C22C5/06 , C22C12/00 , C22F1/00 , C23C14/06 , C23C14/14 , C23C14/34 , G11B7/24 , G11B7/258 , G11B7/26 , H01L21/285
CPC分类号： C22C5/06 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To inhibit the remarkable lowering of the yield factor of a Bi amount in a thin film formed with the use of an Ag-Bi alloy sputtering target. SOLUTION: The Ag-Bi-based alloy sputtering target contains Bi dissolved in Ag. The sputtering target has the intensity of precipitated Bi of 0.01 atom% -1 or less, when it is calculated, for instance, in accordance with a predetermined expression on the basis of an X-ray diffraction measurement result, and has an area ratio of the total of predetermined intensities (intensities of levels 3 to 6 among eight levels) in an amount of 89% or more, when an areal distribution of the characteristic X-ray intensity of Bi is measured with an X-ray microanalysis, and the area ratio of each intensity is calculated on the basis of the measurement result. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2012211378A Cu ALLOY FILM, AND DISPLAY DEVICE OR ELECTRONIC DEVICE EACH EQUIPPED WITH THE SAME 审中-公开
标题翻译：铜合金膜，以及显示装置或与其同时设置的电子设备
公开(公告)号：JP2012211378A
公开(公告)日：2012-11-01
申请号：JP2011078281
申请日：2011-03-31
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： FUKU KATSUFUMI , MIKI AYA , GOTO YASUSHI , NAKAI JUNICHI
IPC分类号： C23C14/14 , C22C9/00 , C22C9/01 , C22C9/02 , C22C9/05 , C22C9/06 , G09F9/30 , H01B5/02 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L29/423 , H01L29/49
CPC分类号： H01L27/124 , C22C9/00 , C22C9/05 , C23C14/165 , G02F1/1368 , G02F2001/136295 , H01L21/28008 , H01L21/32051
摘要： PROBLEM TO BE SOLVED: To provide a novel Cu alloy film which has high adhesion to a substrate and/or an insulation film and exhibits low electric resistivity even after a heat treatment subjected in a manufacturing process of a liquid crystal display device, etc.SOLUTION: The Cu alloy film contacts with a substrate and/or an insulation film directly on the substrate, wherein the Cu alloy film comprises a Cu-Mn-X alloy layer (a first layer) that contains X (X is at least one element selected from a group consisting of Ag, Au, C, W, Ca, Mg, Al, Sn, B and Ni) as an alloy component and a layer (a second layer) that comprises pure Cu or a Cu alloy mainly composed of Cu and having lower electric resistivity than that of the first layer. The first layer and the second layer are arranged in this order from the substrate side.
摘要翻译：要解决的问题：为了提供即使在液晶显示装置的制造过程中进行的热处理之后，对基板和/或绝缘膜具有高粘附性并且显示低电阻率的新型Cu合金膜，等等。解决方案：Cu合金膜直接与基板和/或绝缘膜接触，其中Cu合金膜包括含有X（X）的Cu-Mn-X合金层（第一层）是选自由Ag，Au，C，W，Ca，Mg，Al，Sn，B和Ni组成的组中的至少一种元素）和包含纯Cu或Cu的层（第二层）合金主要由Cu组成，电阻率低于第一层。第一层和第二层从衬底侧依次排列。版权所有（C）2013，JPO＆INPIT

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